• Title/Summary/Keyword: integrated passives

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Solenoid Type 3-D Passives(Inductors and Trans-formers) For Advanced Mobile Telecommunication Systems

  • Park, Jae Y.;Jong U. Bu
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.2 no.4
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    • pp.295-301
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    • 2002
  • In this paper, solenoid-type 3-D passives (inductors and transformers) have been designed, fabricated, and characterized by using electroplating techniques, wire bonding techniques, multi-layer thick photoresist, and low temperature processes which are compatible with semiconductor circuitry fabrication. Two different fabrication approaches are performed to develop the solenoid-type 3-D passives and relationship of performance characteristics and geometry is also deeply investigated such as windings, cross-sectional area of core, spacing between windings, and turn ratio. Fully integrated inductor has a quality factor of 31 at 6 GHz, an inductance of 2.7 nH, and a self resonant frequency of 15.8 GHz. Bonded wire inductor has a quality factor of 120, an inductance of 20 nH, and a self resonant frequency of 8 GHz. Integrated transformers with turn ratios of 1:1 and n:l have the minimum insertion loss of about 0.6 dB and the wide bandwidth of a few GHz.

Soft Magnetic Applications for RF IT devices

  • Masahiro Yamaguchi;Kim, Ki-Hyeon;Seok Bae;Shinji Ikeda;Arai, Ken-Ichi
    • Proceedings of the Korean Magnestics Society Conference
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    • 2002.12a
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    • pp.11-11
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    • 2002
  • Huge applications of soft magnetic films can be expected as integrated passives in the infest IT devices, including CMOS compatible RF integrated inductors and transformers, transmission line devices, electromagnetic noise countermeasure, sensors, etc. A new 1MHz-9GHz permeameter has been completed and clarified the possibility of modern magnetic films for applications in integrated passives. The films evaluated include CoNbZr, CoZro, CoAlPdO, electroplated NiZn(Co) ferrite, etc. (omitted)

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Characterization of Embedded Inductors using Partial Element Equivalent Circuit Models (부분등가회로모델을 이용한 매립형 인덕터의 특성 연구)

  • 신동욱;오창훈;이규복;김종규;윤일구
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.5
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    • pp.404-408
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    • 2003
  • The characterization for several multi-layer embedded inductors with different structures was investigated. The optimized equivalent circuit models for several test structures were obtained from HSPICE. Building blocks are modeled using Partial element equivalent circuit method. The mean and the standard deviation of model parameters were extracted and predictive modeling was performed on different test structure. From this study, the characteristic of multi-layer inductors can be predicted.

A study on the Characteristics of RF switch module on 1${\sim}$3 GHz Band (1${\sim}$3 GHz 대역의 GMS Type Switch Module 특성에 관한 연구)

  • Kim, In-Sung;Song, Jae-Sung;Suh, Young-Suk
    • Proceedings of the KIEE Conference
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    • 2004.07c
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    • pp.1673-1675
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    • 2004
  • The design, modeling and measurement of RF switch module for GSM applications is presented in this paper. RF switch module is constructed using a LTCC multi-layer switching circuit and integrated low pass filter. Insertion and return loss of the low pass filter were designed less than 0.3 dB and better than 12.7 dB at 900 MHz. The RF switch module contained 10 embedded passives and 3 surface mount components integrated on $4.6{\times}4.8{\times}1.2$ mm, 6-layer multi-layer integrated circuit. The insertion loss of switch module was measured at 900 MHz was 11 dB.

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A study on the design of switch module for devices (세라믹 적층형 스위치 모듈 설계에 관한 연구)

  • Kim, In-Sung;Song, Jae-Sung;Min, Bok-Ki
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.431-434
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    • 2004
  • The design, simulation, modeling and measurement of a RF switch module for GSM applications were presented in this paper. switch module were simulated by ADS and constructed using a LTCC multi-layer switching circuit and integrated low pass filter, designed to operate in the GSM band. Insertion and return losses at 900 MHz of the low pass filters were designed to lower than 0.3 dB and higher than 12.7 dB respectively. The switch module constructed, contained 10 embedded passives and 3 surface mounted components integrated on $4.6{\times}4.8{\times}1.2$ m volume, 6-layer integrated circuit. The insertion loss of switch module at m MHz were around 11 dB.

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Monolithically Integrable RF MEMS Passives

  • Park, Eun-Chul;Park, Yun-Seok;Yoon, Jun-Bo;Euisik Yoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.2 no.1
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    • pp.49-55
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    • 2002
  • This paper presents high performance MEMS passives using fully CMOS compatible, monolithically integrable 3-D RF MEMS processes for RF and microwave applications. The 3-D RF MEMS technology has been developed and investigated as a viable technological option, which can break the limit of the conventional IC technology. We have demonstrated the versatility of the technology by fabricating various 3-D thick-metal microstructures for RF and microwave applications, such as spiral/solenoid inductors, transformers, and transmission lines, with a vertical dimension of up to $100{\;}\mu\textrm{m}$. To the best of our knowledge, we report that we are the first to construct a fully integrated VCO with MEMS inductors, which has achieved a low phase noise of -124 dBc/Hz at 300 kHz offset from a center frequency of 1 GHz.

A Study on the Rx/Tx Switch Module with integrated Low Pass Filter (LPF가 집적화된 Rx/Tx 스위치 모듈에 관한 연구)

  • Song Jae-Sung;Min Bok-Ki;Jeong Soon-Jong;Kim In-Sung
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.54 no.5
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    • pp.185-189
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    • 2005
  • This paper focuses on the design for Rx/Tx switch module of GSM(global standard mobile) band, characterization of a miniature, low power and dual-band implementation of the front-end switch module with low-pass filer And the effort to make agreement between the simulated design and the measured data for these solutions takes the place through accumulated design and manufacturing data library. We present the design, modeling and measurement of switch module integrating GSM Rx/Tx switching circuit and LPF(low pass filter) on a LTCC(low temperature co-fired ceramic) substrate. For GSM application, insertion and return loss of the low pass filter designed was less than 0.3 dB which was less than 12.7 dB at 900 MHz. The LTCC switch module contained 10 embedded passives and 3 surface mount components integrated on 4.6$\times$4.8$\times$1.2 mm, 6-layer multi-layer integrated circuit. The insertion loss of switch module measured at 900 MHz was 11 dB. In both of the design approach yielded excellent agreement between measured and simulated results.

A study on the integration of Rf switch module using LTCC technology (LTCC 기술을 이용한 RF Switch Module의 집적화에 관한 연구)

  • Kim, Ji-Young;Kim, In-Sung;Min, Bok-Ki;Song, Jae-Sung;Suh, Young-Suk;Nam, Hyo-Duk
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.710-713
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    • 2004
  • The design, simulation, modeling and measurement of a low temperature co-fired ceramic (LTCC) RF switch module for GSM applications is presented in this paper. RF switch module is constructed using a Rx/Tx switching circuit and integrated low pass filter. The low pass filter function was designed to operate in th GSM band. Insertion and return loss of the low pass filter were designed less than 0.3 dB and better than 12.7 dB at 900 MHz. The RF switch module contained 10 embedded passives and 3 surface mount components integrated on $4.6{\times}4.8{\times}1.2$ nm, 6-layer multi-layer integrated circuit. The insertion loss of switch module was measured at 900 MHz was 11 dB.

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LTCC and LTCC-M Technologies for Multichip Module (Multichip module 개발을 위한 LTCC 밀 LTCC-M 기술)

  • 박성대;강현규;박윤휘;문제도
    • Journal of the Microelectronics and Packaging Society
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    • v.6 no.3
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    • pp.25-35
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    • 1999
  • LTCC (Low Temperature Cofired Ceramic) or LTCC-M (Low Temperature Cofired ceramic on Metal) technology is one of MCM-C (Multichip Module on Ceramic) technologies and becomes to be widely used in consumer, RF and automotive electronics. As green sheets for LTCC are cofired below $1000^{\circ}C$ in comparison with those for HTCC (High Temperature Cofired Ceramic), high conductivity metal traces such as gold, silver and copper can be used. The dimensional stability in LTCC-M technology enables embedded passives to be integrated inside modules, which enhances the electrical performance and increases the reliability of the modules. Coefficient of thermal expansion and dielectric constant can be controlled by changing composition and heating profile for cofiring. In this technical review, LTCC and LTCC-M technologies are introduced and advantages of those technologies are explained.

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