• JSTS:Journal of Semiconductor Technology and Science
• /
• 제2권4호
• /
• pp.295-301
• /
• 2002

In this paper, solenoid-type 3-D passives (inductors and transformers) have been designed, fabricated, and characterized by using electroplating techniques, wire bonding techniques, multi-layer thick photoresist, and low temperature processes which are compatible with semiconductor circuitry fabrication. Two different fabrication approaches are performed to develop the solenoid-type 3-D passives and relationship of performance characteristics and geometry is also deeply investigated such as windings, cross-sectional area of core, spacing between windings, and turn ratio. Fully integrated inductor has a quality factor of 31 at 6 GHz, an inductance of 2.7 nH, and a self resonant frequency of 15.8 GHz. Bonded wire inductor has a quality factor of 120, an inductance of 20 nH, and a self resonant frequency of 8 GHz. Integrated transformers with turn ratios of 1:1 and n:l have the minimum insertion loss of about 0.6 dB and the wide bandwidth of a few GHz.

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2002년도 동계연구발표회 논문개요집
• /
• pp.11-11
• /
• 2002

Huge applications of soft magnetic films can be expected as integrated passives in the infest IT devices, including CMOS compatible RF integrated inductors and transformers, transmission line devices, electromagnetic noise countermeasure, sensors, etc. A new 1MHz-9GHz permeameter has been completed and clarified the possibility of modern magnetic films for applications in integrated passives. The films evaluated include CoNbZr, CoZro, CoAlPdO, electroplated NiZn(Co) ferrite, etc. (omitted)

• 한국마이크로전자및패키징학회:학술대회논문집
• /
• 한국마이크로전자및패키징학회 2003년도 국제표면실장 및 인쇄회로기판 생산기자재전:전자패키지기술세미나
• /
• pp.65-91
• /
• 2003

• 한국전기전자재료학회논문지
• /
• 제16권5호
• /
• pp.404-408
• /
• 2003

The characterization for several multi-layer embedded inductors with different structures was investigated. The optimized equivalent circuit models for several test structures were obtained from HSPICE. Building blocks are modeled using Partial element equivalent circuit method. The mean and the standard deviation of model parameters were extracted and predictive modeling was performed on different test structure. From this study, the characteristic of multi-layer inductors can be predicted.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2004년도 하계학술대회 논문집 C
• /
• pp.1673-1675
• /
• 2004

The design, modeling and measurement of RF switch module for GSM applications is presented in this paper. RF switch module is constructed using a LTCC multi-layer switching circuit and integrated low pass filter. Insertion and return loss of the low pass filter were designed less than 0.3 dB and better than 12.7 dB at 900 MHz. The RF switch module contained 10 embedded passives and 3 surface mount components integrated on $4.6{\times}4.8{\times}1.2$ mm, 6-layer multi-layer integrated circuit. The insertion loss of switch module was measured at 900 MHz was 11 dB.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
• /
• pp.431-434
• /
• 2004

The design, simulation, modeling and measurement of a RF switch module for GSM applications were presented in this paper. switch module were simulated by ADS and constructed using a LTCC multi-layer switching circuit and integrated low pass filter, designed to operate in the GSM band. Insertion and return losses at 900 MHz of the low pass filters were designed to lower than 0.3 dB and higher than 12.7 dB respectively. The switch module constructed, contained 10 embedded passives and 3 surface mounted components integrated on $4.6{\times}4.8{\times}1.2$ m volume, 6-layer integrated circuit. The insertion loss of switch module at m MHz were around 11 dB.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제2권1호
• /
• pp.49-55
• /
• 2002

This paper presents high performance MEMS passives using fully CMOS compatible, monolithically integrable 3-D RF MEMS processes for RF and microwave applications. The 3-D RF MEMS technology has been developed and investigated as a viable technological option, which can break the limit of the conventional IC technology. We have demonstrated the versatility of the technology by fabricating various 3-D thick-metal microstructures for RF and microwave applications, such as spiral/solenoid inductors, transformers, and transmission lines, with a vertical dimension of up to $100{\;}\mu\textrm{m}$. To the best of our knowledge, we report that we are the first to construct a fully integrated VCO with MEMS inductors, which has achieved a low phase noise of -124 dBc/Hz at 300 kHz offset from a center frequency of 1 GHz.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제54권5호
• /
• pp.185-189
• /
• 2005

This paper focuses on the design for Rx/Tx switch module of GSM(global standard mobile) band, characterization of a miniature, low power and dual-band implementation of the front-end switch module with low-pass filer And the effort to make agreement between the simulated design and the measured data for these solutions takes the place through accumulated design and manufacturing data library. We present the design, modeling and measurement of switch module integrating GSM Rx/Tx switching circuit and LPF(low pass filter) on a LTCC(low temperature co-fired ceramic) substrate. For GSM application, insertion and return loss of the low pass filter designed was less than 0.3 dB which was less than 12.7 dB at 900 MHz. The LTCC switch module contained 10 embedded passives and 3 surface mount components integrated on 4.6$\times$4.8$\times$1.2 mm, 6-layer multi-layer integrated circuit. The insertion loss of switch module measured at 900 MHz was 11 dB. In both of the design approach yielded excellent agreement between measured and simulated results.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
• /
• pp.710-713
• /
• 2004

The design, simulation, modeling and measurement of a low temperature co-fired ceramic (LTCC) RF switch module for GSM applications is presented in this paper. RF switch module is constructed using a Rx/Tx switching circuit and integrated low pass filter. The low pass filter function was designed to operate in th GSM band. Insertion and return loss of the low pass filter were designed less than 0.3 dB and better than 12.7 dB at 900 MHz. The RF switch module contained 10 embedded passives and 3 surface mount components integrated on $4.6{\times}4.8{\times}1.2$ nm, 6-layer multi-layer integrated circuit. The insertion loss of switch module was measured at 900 MHz was 11 dB.

• 마이크로전자및패키징학회지
• /
• 제6권3호
• /
• pp.25-35
• /
• 1999

저온동시소성 또는 금속상 저온동시소성 기술은 세라믹 다층멀티칩 기술의 하나로 이 기술을 이용한 모듈은 일반 전기 부품, 고주파 및 자동차 전장에 적용되기 시작하였다. 고온동시소성 기술과 비교하여 저온동시소성 기판의 소성은 그 온도가 $1000^{\circ}C$ 이하에서 이루어지므로 전기전도도가 높은 금, 은, 구리 등의 금속을 이용하여 내부 전극을 형성할 수 있다. 금속상 저온 동시소성 기술은 소성 후의 치수안정성 (x-, y- 방향으로 수축률 0.1 % 이하)의 장점으로 모듈 내부에 수동소자를 내장할 수 있으며, 이러한 장점은 전기적 특성의 향상과 신뢰성 증가를 가져온다. 모듈의 열팽창계수 및 유전율은 조성이나 소성조건을 바꾸어 조정이 가능하다. 본 기술해설에서는 저온동시소성 또는 금속상 저온동시소성 기술에 관한 소개와 장점에 대하여 설명하였다.