• Journal of the Korean Society for Precision Engineering
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• v.8 no.4
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• pp.107-117
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• 1991

The dynamic stability problem of nonconservative system is one of the important problems. In this study, flexible missile with mass variation is regarded as a free Timoshenko beam subjected to a controlled follower force. The stability was studied numerically through the finite element method. Through the study, the obtained results are as follows: [1] Without force direction control (1) In the case of no mass reduction, the existence of concentrated mass increases critical follower force. (2) Mass reduction rate of the beam slightly effects on the change of critical follower force. [2] With force direction control (1) Shear deformation parameter S contributes insignificantly to the force at instability when $S{\geq}10^4$. (2) With mass variation, increase of concentrated mass increases critical follower force at instbility. (3) The type of promary instability is determined by the sensor location.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.351.1-351.1
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• 2014

In this study, we prepared the solution-based In-Ga-Zn oxide thin film transistors (IGZO TFTs) of multistacked active layer and characterized the gate bias instability by measuring the change in threshold voltage caused by stacking. The solutions for IGZO active layer were prepared by In:Zn=1:1 mole ratio and the ratio of Ga was changed from 20% to 30%. The TFTs with multistacked active layer was fabricated by stacking single, double and triple layers from the prepared solutions. As the number of active layer increases, the saturation mobility shows the value of 1.2, 0.8 and 0.6 (). The electrical properties have the tendency such as decreasing. However when gate bias VG=10 V is forced to gate electrode for 3000 s, the threshold voltage shift was decreased from 4.74 V to 1.27 V. Because the interface is formed between the each layers and this affected the current path to reduce the electrical performances. But the uniformity of active layer was improved by stacking active layer with filling the hole formed during pre-baking so the stability of device was improved. These results suggest that the deposition of multistacked active layer improve the stability of the device.