• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.11
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• pp.77-83
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• 2009

In this paper, a selective feedback low-noise amplifier (LNA) has been realized in a $0.18{\mu}m$ CMOS technology to cover a number of wireless multi-standards. By exploiting notch filter, the SF-LNA demonstrates the measured results of the power gain (S21) of 11.5~13dB and the broadband input/output impedance matching of less than -10dB within the frequency bands of 820~960MHz and 1.5~2.5GHz, respectively. The chip dissipates 15mW from a single 1.8V supply, and occupies the area of $1.17\times1.0mm^2$.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.39 no.4
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• pp.409-412
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• 2002

The LNA(Low Noise Amplifier) is designed for use in low cost commercial application covered fully IMT-2000 band(1920~2170MHz, BW=250MHz). It is optimized source inductance for source lead and designed to equivalent etched line. The LNA uses a high pass impedance matching network for noise match and simple structure. The bias circuit designs have been made self-biased with a negative voltage applied to gate. The power supply voltage is 8V, total current is 180mA. The LNA is biased at a Vgs of -0.4, Vds of 4V for first stage and Vds of 5V for second stage. The LNA is designed competitively for commercial product specification. The measured gain and noise figure of the completed amplifier was 20dB and 1dB, respectively. Also, input VSWR, P1dB and gain flatness was measured of 1.14 ~ l.3dB, 22.4dBm and $\pm$0.45dB, respectively. The designed LNA can be used for commercial product.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.7
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• pp.769-776
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• 2003

This paper presents analysis and design of microstrip Rotman lens operating over wide band and wide steering angle by the contour integral method along with the segmentation method. All mutual coupling, internal reflections between ports and the discontinuity at every junction are taken into account. Equally spaced ports are designed and realized, which make suppress output ripple through the array ports. Impedance matching and mutual coupling between ports are analyzed and optimized using 12 input and 12 output exponential tapers. The measured results of fabricated lens show ${\pm}$ 1.8 dB insertion loss deviation over 6∼18 GHz wide frequency range and beam steering accuracy less than 1$^{\circ}$over ${\pm}$53$^{\circ}$angle and agrees well with the analysis results.

• Journal of IKEEE
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• v.13 no.3
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• pp.72-79
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• 2009

This paper describes a compact microstrip active antenna with dual polarization. The antenna, receiving both a left-hand circularly polarized wave and a right-hand circularly polarized wave, has a function of polarization diversity. A square-shaped empty room is located on the inside of the microstrip radiator so that the size has been reduced. And slots are added around feeding point to improve input matching. Also, amplifier and switching circuitry are placed at the empty room to increase antenna gain and to select one of the circular polarizations, respectively. The proposed antenna has been applied to GPS(global positioning system). The measurement results show that it has 10dB-impedance bandwidth, 3dB axial bandwidth of about 50MHz, 3dB beamwidth of 90degree, and gain of 13dBi, respectively, for RHCP. Also, it has 3dB axial bandwidth of about 50MHz, 3dB beamwidth of 84 degree, and gain of 12dBi, respectively, for LHCP.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.12
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• pp.45-51
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• 2011

This paper presents a wideband low-noise amplifier (LNA) covering 800MHz~5.8GHz for various wireless communication standards by utilizing in a 0.13um CMOS technology. Particularly, the LNA consists of two stages to improve the low-noise characteristics, that is, a cascode input stage and an output buffer with noise cancellation technique. Also, a feedback resistor is exploited to help achieve wideband impedance matching and wide bandwidth. Measure results demonstrate the bandwidth of 811MHz~5.8GHz, the maximum gain of 11.7dB within the bandwidth, the noise figure of 2.58~5.11dB. The chip occupies the area of $0.7{\times}0.9mm^2$, including pads. DC measurements reveal the power consumption of 12mW from a single 1.2V supply.

• Journal of IKEEE
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• v.24 no.1
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• pp.368-371
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• 2020

In this paper, we propose a linear tapered slot rectifying antenna for a portable UHF-band RFID system. Since the proposed rectifying antenna does not use a dielectric substrate, the planar antenna is implemented with a thin metal thickness. The rectifier circuit converts input RF power into output DC voltage using a voltage doubler circuit based on two anti-parallel schottky diodes. The rectifying antenna is integrated by the voltage doubler circuit into a linear tapered slot antenna. For conjugate impedance matching of the rectifying circuit and the linear tapered slot antenna, the source-pull method was utilized by adjusting the angle of the tapered slot and the length of the antenna feed line. The proposed antenna prototype has been verified with the electrical and radiation characteristics through RF-DC conversion and far-field radiation test in open space measurement environment. Finally, the proposed antenna is realized to 0.23-wavelength (75 mm) and 0.18-wavelength (60 mm) at 915 MHz center frequency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.11 s.114
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• pp.1082-1088
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• 2006

A turnstile antenna using the parasitic monopole has been developed for STSAT-2 TT&C application. The antenna consists of two radiating elements; a bow-tie dipole and a parasitic monopole. The bow-tie dipole is main radiating element, used a bow-tie structure for bandwidth improvement and size reduction. The parasitic monopole improved beamwidth and axial ratio. The input impedance of the antenna is about 50 ohm without a matching circuit. The proposed antenna has beamwidth of $>140^{\circ}$, axial ratio of < 3 dB and VSWR of < 1.5 in the band of $2.075{\sim}2.282GHz$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.10
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• pp.941-944
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• 2016

This paper proposes 24 GHz power amplifier for automotive collision avoidance and surveillance short range radar using Samsung 65-nm CMOS process. The proposed circuit has a 2-stage differential power amplifier which includes common source structure and transformer for single to differential conversion, impedance matching, and power combining. The measurement results show 15.5 dB maximum voltage gain and 3.6 GHz 3 dB bandwidth. The measured maximum output power is 13.1 dBm, input $P1_{dB}$ is -4.72 dBm, output $P1_{dB}$ is 9.78 dBm, and maximum power efficiency is 17.7 %. The power amplifier consumes 74 mW DC power from 1.2 V supply voltage.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.12
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• pp.2662-2670
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• 2009

The effect of the reflector type for the SAW filter on the characteristics of the slanted finger IDT filter have been studied by computer simulation. The IDT was evaporated by Aluminum-Copper alloy. The design condition was optimized by the phase shift of the SAWfilter for WCDMA. We have employed that the number of pairs of the input and output IDT are 50 pairs and the thickness are $5,000{\AA}$, and the width and the space of reflector are $3.6{\mu}m$ and $2.0{\mu}m$, respectively. Frequency response of the fabricated SFIT filter has the property that the center frequency is about 190MHz and bandwidth at the 3dB is probably 8.2MHz. And we could obtain that the return loss is less then 16dB, the ripple characteristics is probably 4dB and the triple transit echo is less then 18dB after when we have matched impedance.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.2
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• pp.239-244
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• 2004

In this paper, we have developed a frequency mixer which can be used as a microwave phase conjugator in the LS band retrodirective antenna system. The mixer as a phase conjugator must have an If signal of which frequency is nearly as high as that of an RF signal, so this fact brings difficulty in the combination of input signals and the design of impedance matching circuit. The circuit configuration is chosen to be of the gate mixer using a pseudomorphic HEMT device. The operating frequencies are 4.00 ㎓, 2.01 ㎓, and 1.99 ㎓ for LO, RF, and IF, respectively. Conversion gain is measured to be 12.5 ㏈ and 1 ㏈ compression point -34 ㏈m at the LO power of -7 ㏈m. The mixer fabricated in this research is the single-ended type, where RF leakage signal appears inevitably at the If port because RF and If frequencies are almost the same. The circuit topology suggested here can be applied directly to the design of balanced-type mixers and phase conjugators.