• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2001.11a
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• pp.213-217
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• 2001

본 논문에서는 CPW 구조를 이용하여 60 GHz 무선 시스템 응용을 위한 V-band용 하향 주파수 혼합기를 설계 및 제작하였다. 하향 주파수 혼합기의 설계 및 제작에 있어서 GaAs PHEMT(Pseudomorphic high electron mobility transistor)를 기반으로 하였으며, 회로설계를 위해 coplanar waveguide(CPW) 라이브러리를 구축하여 이용하였다. 제작된 하향 주파수 혼합기의 변환이득은 국부발진주파수(LO) 입력이 8 dBm일 때 -8.5 dB의 최대 변환이득 특성을 얻었으며 Pl dB는 -3.3 dBm을 얻었다. 제작된 회로의 칩 크기는 1.6$\times$l.6 $\textrm{mm}^2$ 이다.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.623-626
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• 2005

In this paper, we proposed a new type SIR bandpass filter using DAML. This filter is consisted of 2 layers with MEMS resonator layer and CPW feed line. DAML ring resonator is elevated with $10\;{\mu}m$ height from GaAs substrate. Using MEMS processing, we are able to realize SIR bandpass filter easily. Furthermore it is useful to integrate on conventional MMICs because it has CPW interfaces and ring resonator is isolated from substrate by air-gap. We optimized and measured the results that $S_{21}$ attenuation at rejected band is over 15 dB, insertion loss is inside the limit of 3 dB, and relative bandwidth is about 10 % at 60 GHz

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2000.11a
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• pp.197-201
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• 2000

In this paper, a MMIC(Monolithic Microwave Integrated Circuit) broadband drive amplifier for wireless communication system has designed using active feedback method. The MMIC brodband amplifier was designed using 0.5$\mu\textrm{m}$ MESFET of ETRI library. Simulation results show that gain is 22 dB, and gain flatness ${\pm}$1 dB. Maximum output power 15 dBm and noise figure 2.5 dB in bandwidth 500 MHz ～3.0 GHz. The MMIC Broadband amplifer's chip area is 14mm${\times}$1.4mm.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.25-28
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• 2002

In this paper, a micromachined millimeter-wave end-gap band-pass filter (BPF) is presented. The millimeter-wave BPF is designed using 3D design software, Zeland IE3D with the center frequency of 60 GHz, band width of 3 GHz, ripple of 1㏈ and insertion loss of 2.5dB. This type of micromachined BPF can be used in millimeter-wave circuit.

• Bulletin of the Korean Chemical Society
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• v.24 no.1
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• pp.55-59
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• 2003

This work is focused on analyzing ion-pair interactions and showing the effect of solvent induced inter-atomic attractions in various dielectric environments. To estimate the stability of ion-pairs, SCI-PCM ab initio MO calculations were carried out. We show that the solvent-induced attraction or ‘cavitation' energy of the ion-pair interactions in solution that arises mainly from the stabilization of the water molecules by the generation of an electrostatic field. In fact, even the strong electrostatic interaction characteristic of ion-pair interactions in the gas phase cannot overcome the destabilization or reorganization of the water molecules around solute cavities that arise from cancellation of the electrostatic field. The solvent environment, possibly supplemented by some specific solvent molecules, may help place the solute molecule in a cavity whose surroundings are characterized by an infinite polarizable dielectric medium. This behavior suggests that hydrophobic residues at a protein surface could easily contact the side chains of other nearby residues through the solvent environment, instead of by direct intra-molecular interactions.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.12
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• pp.7-11
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• 2007

In this paper, we proposed the dual-mode stepped impedance ring resonator bandpass filter for MMIC (Microwave Monolithic Integrated Circuit) applications using the dielectric-supported air-gapped microstrip line (DAML). The ring resonator fabricated by surface micromachining technology. This filter consists of a DAML resonator layer and a CPW feed line. The DAML ring resonator is elevated with $10{\mu}m$ height from GaAs substrate surface. This bandpass filter is $1-{\lambda}g$ type stepped impedance ring resonator including dual-mode resonance. From the measurements, we obtained attenuation of over 15 dB and insertion loss of 2.65 dB at the center frequency of 97 GHz. Relative bandwidth is about 12 % at 97 GHz. Furthermore, the proposed bandpass filter is useful to integrate with conventional MMICs.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.3 no.2 s.5
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• pp.85-93
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• 2004

In this paper, microstrip stepped-impedance hairpin resonator (SIR) lowpass filter f.PF) by surface rnicromachining on GaAs substrate is sugsested. This filter has the advantages of compact side, easy fabrication, and sharp cutoff frequency response. The new SIR LPF shows the 3 dB passband of dc to 33 GHz, the insertion loss of 0.82 dB, and the return loss of better than 17 dB up to 25.57 GHz. This filter is useful for many microwave system applications.

• Proceedings of the Computational Structural Engineering Institute Conference
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• 2008.04a
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• pp.446-449
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• 2008

Construction project has been changing a huge size and the complicated, so information of each parties are overflow. For more successful construction, more communications are required. Nowadays, BIM has been used widely to solve the problem. But BIM information is used by attribute parties. Many of parties cannot use BIM information. Therefore, this study's purpose is to develope prototype of BIM usage for tower crane. It will overcome current information dividing.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.12
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• pp.1-6
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• 2007

In this study, we have performed the channel modification of the conventional MHEMT (metamorphic high electron mobility transistor) to improve the breakdown characteristics. The Modified channel consists of the InxGal-xAs channel and the InP sub channel instead of the InxGa1-xAs channel. Since InP has the lower impact ionization coefficient in comparison with In0.53Ga0.47As, we have adopted the InP-composite channel in the modified MHEMT. We have investigated the breakdown mechanism and the RF characteristics for the conventional and the InP- composite channel MHEMTs. From the measurement results, we have obtained the enhanced on and off-state breakdown voltages of 2.4 and 5.7 V, respectively. Also, the increased RF characteristics have brought about the decreased output conductance for the InP-composite channel MHEMT. The cut-off frequency (fT) and the maximum oscillation frequency (fmax) for the InP-composite Channel MHEMT were 160 GHz and 230 GHz, respectively. It has been shown that the InP-composite channel MHEMT has the potential applications for the millimeter wave power device.

• The monthly packaging world
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• s.336
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• pp.68-79
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• 2021