• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.78-78
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• 2013

Recently, many platinoid metals like platinum and ruthenium have been used as an electrode of microelectronic devices because of their low resistivity and high work-function. However the material cost of Ru is very expensive and it usually takes long initial nucleation time on SiO2 during chemical deposition. Therefore many researchers have focused on how to enhance the initial growth rate on SiO2 surface. There are two methods to deposit Ru film with atomic layer deposition (ALD); the one is thermal ALD using dilute oxygen gas as a reactant, and the other is plasma enhanced ALD (PEALD) using NH3 plasma as a reactant. Generally, the film roughness of Ru film deposited by PEALD is smoother than that deposited by thermal ALD. However, the plasma is not favorable in the application of high aspect ratio structure. In this study, we used a bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] as a metal organic precursor for both thermal and plasma enhanced ALDs. In order to reduce initial nucleation time, we use several methods such as Ar plasma pre-treatment for PEALD and usage of sacrificial RuO2 under layer for thermal ALD. In case of PEALD, some of surface hydroxyls were removed from SiO2 substrate during the Ar plasma treatment. And relatively high surface nitrogen concentration after first NH3 plasma exposure step in ALD process was observed with in-situ Auger electron spectroscopy (AES). This means that surface amine filled the hydroxyl removed sites by the NH3 plasma. Surface amine played a role as a reduction site but not a nucleation site. Therefore, the precursor reduction was enhanced but the adhesion property was degraded. In case of thermal ALD, a Ru film was deposited from Ru precursors on the surface of RuO2 and the RuO2 film was reduced from RuO2/SiO2 interface to Ru during the deposition. The reduction process was controlled by oxygen partial pressure in ambient. Under high oxygen partial pressure, RuO2 was deposited on RuO2/SiO2, and under medium oxygen partial pressure, RuO2 was partially reduced and oxygen concentration in RuO2 film was decreased. Under low oxygen partial pressure, finally RuO2 was disappeared and about 3% of oxygen was remained. Usually rough surface was observed with longer initial nucleation time. However, the Ru deposited with reduction of RuO2 exhibits smooth surface and was deposited quickly because the sacrificial RuO2 has no initial nucleation time on SiO2 and played a role as a buffer layer between Ru and SiO2.

• 한국세라믹학회지
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• 제32권5호
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• pp.587-593
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• 1995

Abnomal grain growth behavior of BaTiO3 ceramics was investigated with addition of seed grains. It was foudn that the nucleation rate of abnormal grain was constant and growth of abnormal grain was linearly increased with sitnering time, regardless of amount of seed grains. These facts were also confirmed by fitting of the volume fraction of abnormal grain vs. sintering time using Avrami type equation (n=4). It was suggested that seed grains did not change the nucleation rate or growth mechanism of abnormal grain but increase the number of abnormal grains at initial stage of sintering and then it led to fine microstructure of BaTiO3 ceramics.

• 한국표면공학회지
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• 제39권2호
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• pp.82-86
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• 2006

Diamond films were deposited on 10.0$\times$10.0$mm^2$ pretreated (100) Si substrate using $CH_4$, $H_2$ and $O_2$ source gases in a horizontal-type microwave plasma enhanced chemical vapor deposition system. We introduced a cyclic on/off modulation of $CH_4$ and/or $O_2$ flows is a function of the reaction time during the initial deposition stage. Surface morphology and diamond quality of the films were investigated as a function of the different cyclic modulation process of the source gases flows: For the enhancement of the nucleation density, there is an optimal process for the incorporation of oxygen. Diamond qualities of the films were improved by introducing oxygen gas during the initial deposition stage.

• 대한화학회지
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• 제56권4호
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• pp.431-439
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• 2012

Dissipative particle dynamics (DPD) was carried out to study the nucleation and crystal growth process of $CeO_2$ nanoparticles in different alcohol aqueous solutions. The results showed that the nucleation and crystal growth process of $CeO_2$ can be classified into three stages: nuclei growth, crystal stabilization and crystal aggregation except the initial induction stage, which could be reproduced by collecting simulation results after different simulation time. Properly selecting the sizes of $CeO_2$ and water bead was crucial in the simulation system. The influence of alcohol type and content in solutions, and precipitation temperature on the particle dimension were investigated in detail and compared with the experimental results. The consistency between simulation results and experimental data verify that the simulation can reproduce the macroscopic particle aggregation process. The effect of solvent on the nucleation and crystal growth of $CeO_2$ nanoparticles are different at three stages and can not be simply described by Derjaguin-Landau-Verwey-Overbeek (DLVO) theory or nucleation thermodynamics theory. Our work demonstrated that DPD methods can be applied to study nanoparticle forming process.

• 한국전기전자재료학회논문지
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• 제28권8호
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• pp.531-538
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• 2015

This study examined the size and shape of the nano-silver particle through the analysis of electrical resistance when synthesizing nano-sized silver by using the chemical liquid reduction. Changes in particle behaviors formed according to the changes in electronic characteristics by electric resistance in each time period in the beginning of reduction reaction in a course of synthesizing the nano-silver particle formation were studied. In addition, analysis was conducted on particle behaviors according to the changes in concentration of $AgNO_3$ and in temperature at the time of reduction and nucleation and growth course when synthesizing the particles based on the particle behaviors were also examined. As the concentration of $AgNO_3$ increased, the same amount of resistance of approximately $5{\Omega}$ was increased in terms of initial electronic resistance. Furthermore, according to the result of formation of nuclear growth graph and estimation of slope based on estimated resistance, slops of $6.25{\times}10^{-3}$, $2.89{\times}10^{-3}$, and $1.85{\times}10^{-3}$ were derived from the concentrations of 0.01 M, 0.05 M, and 0.1 M, respectively. As the concentration of $AgNO_3$ increased, the more it was dominantly influenced by the nuclear growth areas in the initial phase of reduction leading to increase the size and cohesion of particles. At the time of reduction of nano-silver particle, the increases of initial resistance were $4{\Omega}$, $4.2{\Omega}$, $5{\Omega}$, and $5.3{\Omega}$, respectively as the temperature increased. As the temperature was increased into $23^{\circ}C$, $40^{\circ}C$, $60^{\circ}C$, and $80^{\circ}C$, slopes were formed as $4.54{\times}10^{-3}$, $4.65{\times}10^{-3}$, $5.13{\times}10^{-3}$, and $5.42{\times}10^{-3}$ respectively. As the temperature increased, the particles became minute due to the increase of nuclear growth area in the particle in initial period of reduction.

• Transactions on Electrical and Electronic Materials
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• 제7권1호
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• pp.36-41
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• 2006

In this paper, the time evolution of undoped GaN epilayers on a low-temperature GaN buffer layer grown on c-plane sapphire at a low pressure of 300 Torr was studied via a two-step growth condition in a horizontal MOCVD reactor. As a function of the growth time at a high-temperature, the surface morphology, structural quality, and optical and electrical properties were investigated using atomic force microscopy, high-resolution x-ray diffraction, photoluminescence, and Hall effect measurement, respectively. The root-mean-square roughness showed a drastic decrease after a certain period of surface roughening probably due to the initial island growth. The surface morphology also showed the island coalescence and the subsequent suppression of three-dimensional island nucleation. The structural quality of the GaN epilayer was improved with increasing growth time considering the symmetrical (002) and asymmetrical (102) rocking curves. The variations of room-temperature photoluminescence, background carrier concentration, and Hall mobility were measured and discussed.

• 한국정보통신학회논문지
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• 제10권9호
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• pp.1663-1670
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• 2006

펄스 전기증착법에 의해 단결정 Fe 박막을 n-Si(111) 기판위에 직접 성장시켰다. CV 분석 을 통해 $Fe^{2+}n-Si(111)$ 계면은 쇼트키 장벽 형성에 따른 다이오드 특성을 가진다는 사실을 알 수 있었다. 또한 인가 전압에 따른 전기용량의 변화를 보여주는 Mott-Schottky chottky(MS) 관계식을 이용하여 전해질 내에서 n-Si(111) 기판의 flat-band potential(EFB)을 조사하였으며, 0.1M $FeCl_2$ 전해질 내에서 EFB와 산화-환원 전위는 각각 -0.526V 과 -0.316V 임을 알 수 있었다. Fe/n-Si(111) 계면반응 시, Fe 증착 초기 단계에서의 핵 형성과 성장 운동학은 과도전류 특성을 이용하여 조사하였으며, 과도전류 특성을 통해 Fe 박막의 성장모드는 "instantaneous nucleation and 3-dimensional diffusion limited growth"임을 알 수 있었다. 주파수가 300Hz, 최대 전압이 1.4V인 펄스 전압을 이용하여 n-Si(111) 기판위에 Fe를 직접 전기 증착 시켰으며, 형 성 된 Fe 박막은 단결정 ${\alpha}-Fe$로 Si 기판위에 ${\alpha}-Fe(110)/Si(111)$의 격자 정합성을 가지고 성장하였음을 XRD 분석을 통해 확인하였다.

• The Korean Journal of Ceramics
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• 제6권1호
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• pp.74-77
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• 2000

Ta-doped PZT thin films prepared by reactive co-sputtering method could be transformed into single grained perovskite structure utilizing physical etching of Pt bottom electrode. It is found that PZT perovskite phase on damaged (111) Pt electrode by IMD was more easily crystallized than random oriented Pt electrode and less crystallized than (111) Pt electrode. This shows that amorphized Pt electrode surface by IMD process has an effect on crystallization of PZT perovskite phase. 40$\mu\textrm{m}\times40\mu\textrm{m}$ square shape single grain PZT array could be obtained utilizing the difference of incubation time for nucleation of rosettes between ion damaged Pt and (111) oriented Pt electrode. Single grained PZT thin films show low leakage current density of $1\times10^{-7}$ A/$\textrm{cm}^2$ and high break down field of 440kV/cm. The loss of remanent polarization after $10^{11}$ cycles was less than 15% of initial value.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.397-397
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• 2010

Bone is considered as hierarchically organized biocomposites of organic (collagen) and inorganic (hydroxyapatite) materials. The precise structural dependence between hydroxyapatite (HAp, $Ca_{10}(PO_4)_6(OH)_2)$ crystals and collagen fibril is critical to unique characteristics of bone. To meet those conditions and obtain optimal properties, it is essential to understand and control the initial growth mechanisms of hydroxyapatite at the molecular level, such as other nano-structured materials. In this study, collagen fibrils were prepared by adsorbing native type I collagen molecules onto hydrophobic surface. Hydrophobicity was introduced on the Si wafer surface by using PECVD (plasma enhanced chemical vapor deposition) method and cyclohexane as a precursor. Biomimetic nucleation and growth of HAp on the self-assembled collagen nanofibrils were occurred through incubation of the sample in SBF (simulated body fluid). Chemical and morphological evolution of HAp nanocrystals was investigated by surface-sensitive analytical techniques such as ToF-SIMS (Time-of-Flight Secondary Ion Mass Spectrometry) and AFM (Atomic Force Microscopy) in the early growth stages (< 24 hrs). The very initial stages (< 12 hrs) of mineralization could be clearly demonstrated by ToF-SIMS chemical mapping of surface. In addition to ToF-SIMS and AFM measurement, scanning electron microscopy, energy dispersive spectroscopy and X-ray diffraction analysis were conducted to characterize the HAp layer in the late stages. This study is of great importance in the growth of real bone-like materials with a structure analogous to that of natural bones and the development of biomimetic nanomaterials.

• 방사성폐기물학회지
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• 제16권4호
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• pp.411-420
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• 2018

공기 분위기하 $UO_2$의 독특한 산화거동을 모사하기 위해 기존 Crackling Core Model (CCM)을 개선하였다. $UO_2$가 $U_3O_8$으로 전환될 때 시간-전환율 곡선에서 나타나는 실험적 sigmoid 거동을 근사하게 재현할 수 있도록 모델 개선에 파편화 효과로 인한 반응 표면적 증대 및 결정립 가변 전환시간 개념을 고려하였다. $UO_2$는 $U_3O_7$을 거쳐 $U_3O_8$으로 전환되며 최종 결정립 산화소요 시간은 초기 결정립 산화 소요 시간의 10배에 해당한다는 가정을 도입했을 때, 개선된 모델은 599 - 674 K에서의 $UO_2$ 구형 입자의 실험적 산화거동과 근사한 계산결과를 나타내었으며 핵종성장모델(Nucleation and Growth Model) 및 자촉매반응모델(AutoCatalytic Reaction Model)과 비교할 때 가장 작은 오차를 보여주었다. 개선된 모델을 통해 $U_3O_8$으로의 100% 전환시 계산된 활성화에너지값은 $57.6kJ{\cdot}mol^{-1}$로 자촉매반응모델로 계산된 값인 $48.6kJ{\cdot}mol^{-1}$보다 크며, 외삽에 의해 결정된 실험값에 더 근사함이 밝혀졌다.