• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2012년도 추계학술대회 논문집
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• pp.263-264
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• 2012

• 반도체디스플레이기술학회지
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• 제2권1호
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• pp.21-24
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• 2003

Sludged silicon powders that are generated during silicon ingot slicing process have potential usage as silicon source in fabricating silicon carbide powders by adding carbon. A thermodynamic calculation is performed to consider a plausible formation condition for the silicon carbide powders. A thin silicon oxide layer around silicon powder is sufficient to supply equilibrium oxygen partial pressure at the formation temperature($1400^{\circ}C$) of the silicon carbide in the Si-C-O ternary system. Formation of silicon carbide by using the sludged silicon powders is more efficient than by using silicon oxide powders.

• 한국재료학회지
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• 제21권6호
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• pp.334-340
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• 2011

Saw wires have been widely used in industries to slice silicon (Si) ingots into thin wafers for semiconductor fabrication. This study investigated the microstructural and mechanical properties, such as abrasive wear and tensile properties, of a saw wire sample of 0.84 wt.% carbon steel with a 120 ${\mu}M$ diameter. The samples were subjected to heat treatment at different linear velocities of the wire during the patenting process and two different wear tests were performed, 2-body abrasive wear (grinding) and 3-body abrasive wear (rolling wear) tests. With an increasing linear velocity of the wire, the tensile strength and microhardness of the samples increased, whereas the interlamellar spacing in a pearlite structure decreased. The wear properties from the grinding and rolling wear tests exhibited an opposite tendency. The weight loss resulting from grinding was mainly affected by the tensile strength and microhardness, while the diameter loss obtained from rolling wear was affected by elongation or ductility of the samples. This result demonstrates that the wear mechanism in the 3-body wear test is much different from that for the 2-body abrasive wear test. The ultra-high tensile strength of the saw wire produced by the drawing process was attributed to the pearlite microstructure with very small interlamellar spacing as well as the high density of dislocation.

• 한국자원리싸이클링학회:학술대회논문집
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• 한국자원리싸이클링학회 2004년도 춘계임시총회 및 제23회 학술대회
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• pp.186-190
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• 2004

실리콘 잉곳의 절단공정에서 발생하는 폐슬러지는 실리콘과 실리콘카바이드 등의 유가자원이 함유되어 있으며, 이를 효과적으로 분리, 회수하는 방법에 대해 검토하였다. 폐슬러지에 함유된 오일은 유기 용매에 의해 용해되어 효과적으로 분리되었고, 불순물인 철분은 자력선별에 의해 제거할 수가 있었다. 또한 실리콘과 실리콘카바이드의 혼합 분말은 중액선별을 통하여 고순도의 실리콘과 실리콘카바이드로 분리할 수가 있었다.

• 한국자원리싸이클링학회:학술대회논문집
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• 한국자원리싸이클링학회 2004년도 춘계임시총회 및 제23회 학술대회
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• pp.98-102
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• 2004

반도체 산업용 실리콘 잉곳의 절단공정에서 발생하는 폐슬러지 중에는 고순도의 실리콘이 함유되어 있으며, 이 슬러지로부터 분리, 회수한 Si로부터 실리콘화합물 합성하였다. 고비점의 potasium alkoxide 촉매 존재하에서 금속 실리콘과 에탄을 혹은 메탄올과 같은 알코올과의 고액반응에 의해 알콕시 실란을 합성할 수가 있었다 알콕시 실란을 합성반응속도는 반응온도에 크게 의존하였고 최적반응 온도는 $180^{\circ}C{\sim}195^{\circ}C$ 정도이었다. 촉매 첨가량에 따라 알콕시 실란의 반응율이 달라졌으며, 알콕시 실란의 반응율은 최고 90%로 높은 값을 나타내었다.

• 한국결정성장학회지
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• 제10권5호
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• pp.350-355
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• 2000

수평 Bridgeman방식으로 성장된 C축 방향의 사파이어 결정기판을 연마 가공하였으며, 또한 유기금속 기상화학 증착 방법으로 사파이어 기판 위에 GaN 박막을 증착하였다. 사파이어 인고트를 성장하여 2인치 사파이어 기판으로 이용하였으며 웨이퍼 절편장치 및 연마장치를 개발하였다. 이러한 다단계의 연마 가공은 기판 표면을 경면화하였다. 표면 평탄도 및 조도는 원자힘현미경으로 측정하였다. 개발된 사파이어 기판위에 성장된 GaN 박막의 특성 및 청색광소자로의 응용 가능성을 확인하였다.

• 한국재료학회지
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• 제22권9호
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• pp.450-453
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• 2012

In crystalline solar cells, the substrate itself constitutes a large portion of the fabrication cost as it is derived from semiconductor ingots grown in costly high temperature processes. Thinner wafer substrates allow some cost saving as more wafers can be sliced from a given ingot, although technological limitations in slicing or sawing of wafers off an ingot, as well as the physical strength of the sliced wafers, put a lower limit on the substrate thickness. Complementary to these economical and techno-physical points of view, a device operation point of view of the substrate thickness would be useful. With this in mind, BC-BJ Si and GaAs solar cells are compared one to one by means of the Medici device simulation, with a particular emphasis on the substrate thickness. Under ideal conditions of 0.6 ${\mu}m$ photons entering the 10 ${\mu}m$-wide BC-BJ solar cells at the normal incident angle (${\theta}=90^{\circ}$), GaAs is about 2.3 times more efficient than Si in terms of peak cell power output: 42.3 $mW{\cdot}cm^{-2}$ vs. 18.2 $mW{\cdot}cm^{-2}$. This strong performance of GaAs, though only under ideal conditions, gives a strong indication that this material could stand competitively against Si, despite its known high material and process costs. Within the limitation of the minority carrier recombination lifetime value of $5{\times}10^{-5}$ sec used in the device simulation, the solar cell power is known to be only weakly dependent on the substrate thickness, particularly under about 100 ${\mu}m$, for both Si and GaAs. Though the optimum substrate thickness is about 100 ${\mu}m$ or less, the reduction in the power output is less than 10% from the peak values even when the substrate thickness is increased to 190 ${\mu}m$. Thus, for crystalline Si and GaAs with a relatively long recombination lifetime, extra efforts to be spent on thinning the substrate should be weighed against the expected actual gain in the solar cell output power.

• 반도체디스플레이기술학회지
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• 제16권1호
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• pp.91-96
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• 2017

One of the most critical aspects of the modern semiconductor industry is the quality of wafer surface, the roughness of which is mostly caused by the ingot slicing. And the grinding is supposed to be the main process to reduce the surface roughness. The vibrations of the disc surface grinder are the major problem to effectively achieve the required surface quality. In this study, the structure of a disc surface grinder was analyzed through the experiment and the computer simulation to investigate the dynamic characteristics of the machine, and further to alter the design for the improved stability. The result of the study shows that simple design alterations without alternating main body can effectively suppress the vibrations of the machine.

• 한국산업융합학회 논문집
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• 제23권4_2호
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• pp.675-682
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• 2020

Multi-wire sawing is the prominent technology employed to cut hard material ingots into wafers. This paper aimed to research the effect of diamond toughness index on the cutting performance of electroplated diamond wire. Three different toughness index of diamond abrasives were used to manufacture electroplated diamond wires. The cutting performance of electroplated diamond wire is verified through experiments, in which sapphire ingot are cut using single wire sawing machine. A single wire saw for constant load slicing is developed for the cutting performance evaluation of electroplated diamond wire. Choosing the cutting depth, total cutting depth, cutting force and wear of electroplated diamond wires as evaluation parameters, the performance of electroplated diamond wire is evaluated. The results of this study showed that there was a significant direct relationship between the toughness index of diamond abrasives and the cutting performance. Results demonstrated that diamond abrasive with a high toughness index showed higher cutting performance. However, all diamond abrasives showed similar cutting performance under low load conditions. The results of this paper are useful for the development of cutting large diameter ingots and cutting high hardness ingots at high speed.