• 한국농공학회:학술대회논문집
• /
• 한국농공학회 2000년도 학술발표회 발표논문집
• /
• pp.340-345
• /
• 2000

This study was carried out to analyze the light and thermal environment in model greenhouse using infrared absorption film as shading screen and to compare with the case of no shading and using general shading screen such as aluminum foil-backed film, black polyethylene film and thermal blanket. PPFD(photosynthetic photon flux density) of inside the model greenhouse under infrared absorption film was increased by 22% than under general shading screen on the average. And temperature of inside air under infrared absorption film was 2$^{\circ}C$ lower than under general shading screen on the average. So, it is expected that infrared absorption film is useful as shading screen.

• 한국재료학회지
• /
• 제13권10호
• /
• pp.697-702
• /
• 2003

FT-IR and thermograph were used to investigate the infrared radiation characteristics of $SiO_2$film made by the sol-gel method. FT-IR spectrum of the $SiO_2$film showed high infrared absorption by Si-O-Si vibration at 1220, 1080, 800 and cm$460^{-1}$ The infrared absorption and radiation wavelength ranges of the $SiO_2$film measured by the integration method coincided with the reflection method, and the infrared emissivity was 0.65, equally. Depending on the bonding of elements, the infrared emissivity was high in the wavelength range where the infrared absorption rate was high, that follows the Kirchhoff's law. The emissivity showed the highest value in the wavelength range between $8∼10\mu\textrm{m}$. $SiO_2$film was considered as an efficient materials for infrared radiator at temperature below 10$0^{\circ}C$. The heat radiation temperature was $117^{\circ}C$ for the aluminum plate, but $146^{\circ}C$ for the $SiO_2$film after 7 minutes heat absorption, consiquently, $29^{\circ}C$ higher than the former.

• 한국표면공학회지
• /
• 제36권5호
• /
• pp.406-412
• /
• 2003

FT-IR and thermography were used to investigate the infrared radiation characteristic of SiO$_2$ film and SiO$_2$/Fe$_2$O$_3$film coated on aluminum. Through FT-TR spectrum, SiO$_2$film showed high infrared absorption in accordance with the stretching vibration of Si-O-Si, and as$ Fe_2$$O_3$was mixed additional absorption band appeared resulting from the stretching vibration of Fe-O at $590cm^{-1}$ and the bond of Si-O-Fe at $900 cm^{-1}$ The two kinds of film measured by the integration method and the reflective method coincided with each other in the wavelength area of infrared absorption and radiation, and corresponded well with Kirchhoff's law as the infrared emissivity is high in wavelength where infrared absorption rate is high. The emissivity of $SiO_2$ film was 0.65 and that of $SiO_2$/Fe$_2$$O_3$film was 0.77, so the addition of$ Fe_2$$O_3$ raised the infrared emissivity by approximately 13%.$ SiO_2$$Fe_2$$O_3$ film is efficient as an infrared radiator at below $100^{\circ}C$. The temperature of heat radiation after 7 minutes was 117$^{\circ}C$ in aluminum plate and $155^{\circ}C$ in $SiO_2$$Fe_2$$O_3$ film, $38^{\circ}C$ higher than the former.

• 한국세라믹학회지
• /
• 제14권4호
• /
• pp.226-229
• /
• 1977

The infrared absorption spectrum of Synthesized magnesite is shown in the wve number region 2510 and 745cm-1. By using Wilson's GF matrices the force constants' of the Urey-Bradley force field were deterined from the infrared absorption frequencies. For magnesite the stretching force constant K=5.41, the bending force constant H=0.46, the repulsive force constant F=1.97, and the force constant for the out-of-plane vibration fθ=0.65md/Å. For calcite they are K=5.51, H=0.38, F=1.88 and fθ=0.64md/Å.

• 전기학회논문지
• /
• 제62권12호
• /
• pp.1725-1729
• /
• 2013

In this paper, the modeling and simulation of infrared absorption in an infrared absorbing structure with the cascaded transmission line model were carried out. Each layer in the infrared absorbing structure can be modeled as a characteristic impedance of the cascaded transmission line model. The simulation results show that the cavity thickness to get a maximum absorption should be less than a quarter wavelength, which is somewhat different from prevalent thickness. It can be assured that the sheet resistance of an absorbing layer to get a maximum absorption is $377{\Omega}/{\square}$, that the thickness of the absorbing layer dose not affect the spectral characteristics of absorption. It is also shown that the thickness of the active layer is not critical to the IR absorption. It can also be assured that the validation of this modeling is proved in comparison with the previous results from similar absorbing structures.

• 대한기계학회논문집A
• /
• 제28권11호
• /
• pp.1727-1732
• /
• 2004

A nickel layer was deposited onto the PZT thin films, serving both as a selective radiation absorption layer and as a top electrode. The absorption properties of such nickel coated multi-layered infrared detectors were studied in the visible and infrared wavelength ranges. The optimal thickness of the nickel layer on our substrate was 10nm. The maximum absorption coefficient of the deposited 10nm thick nickel layer was 0.7 at a 632nm wavelength. However, a striking asymmetric polarization hysteresis loop was observed in these PZT thin films with nickel as the top electrode. This asymmetric polarization was attributed to the difference between the dynamic pyroelectric responses in these Ni/PZT/Pt films poled either positively or negatively before the measurement. A positively poled film showed a 40% higher voltage response than a negatively poled detector.

• 한국표면공학회지
• /
• 제32권3호
• /
• pp.297-302
• /
• 1999

In situ measurement of infrared absorption spectra has been performed during low-temperature plasma-enhanced chemical vapor depositiion of silicon-oxide films using tetramethoxysilane as a silicon source. Several absorption bands due to the reactant molecules are clearly observed before deposition. In the plasma, these bands completely disappear at any oxygen mixing ratio. This result shows that most of the tetramethoxysilane molecules are dissociated in the rf plasma, even C-H bonds. Existence of Si-H bonds in vapor phase and/or on the film surface during deposition has been found by infrared diagnostics. We observed both a decrease in Si-OH absorption and an increase in Si-O-Si after plasma off, which means the dehydration condensation reaction continues after deposition. The rate of this reaction is much slower than the deposition ratio of the films.

• 센서학회지
• /
• 제32권1호
• /
• pp.55-61
• /
• 2023

The objective of this study is to determine the concentrations of mixed gases by establishing a diagnosis method of a transformer using tunable-wavelength optical infrared sensors. Absorption of infrared light by methane, acetylene, and ethylene gases injected is measured from the outputs of the infrared sensors. Regression analysis equations of the gas concentrations are acquired from their respective measured absorption. The obtained concentrations are as follows: -3-9 % errors above 600 ppm(methane), 3 % errors above 1200 ppm(acetylene), and 10 % errors above 500 ppm(ethylene). The concentration inference equations obtained using the individual gases are applicable when the absorption wavelength bands do not overlap. The results of the fault analysis of a transformer using the Duval triangle method and the tunable infrared gas sensors are as follows: temperature faults with -1-1% errors and energy faults with -7-7 % errors.

• Bulletin of the Korean Chemical Society
• /
• 제17권9호
• /
• pp.826-830
• /
• 1996

Fourier transform infrared (FTIR) temperature studies were performed to examine the microstructural changes that occur in annealing process of the thin films of 1,2-polybutadiene (1,2-PBu)/palladium chloride (PdCl2) complex. The disappearance of the infrared absorption intensities at 1640, 1418, 994 and 910 cm-1 signifies the consumption of 1,2-vinyl groups of 1,2-PBu. The progressive loss of unsaturation and production of methyl groups as a function of temperature were identified by the enhanced infrared absorption intensities at 1447 and 1375 cm-1. The loss of pendent carbon-carbon double bond is considered to involve both palladium-catalyzed addition reaction and thermally induced cyclization.

• 한국정보통신학회논문지
• /
• 제20권11호
• /
• pp.2085-2092
• /
• 2016

IC 기판의 가장 중요한 성질들의 하나는 넓은 영역에 걸쳐 균일해야만 한다는 것이다. 웨이퍼 결함 분석의 다양한 물리적 접근 방법 중에서 적외선 조사 기법에 특별한 관심이 모아지고 있다. 특히, 높은 공간적 분해력을 가지고 있는 근적외선 흡수 방법은 반-절연 GaAs 내의 결함들을 직접적으로 관찰하는데 이용되고 있다. 적외선 전송에 기초를 둔 이 기법은 신속하고 비파괴 적이다. 이 방법은, 직접적으로 GaAs 반도체의 적외선 영상은 결함의 광흡수 작용에 기인한 것임을 밝히고 있다. 반-절연 GaAs 내의 EL2에 관련된, 비 균일 적으로 분포된 결함들의 적외선 흡수 영상에서 콘트라스트가 반전되는 현상에 대해 새로운 모델을 제시하고 있다. 저온 포토퀀칭 실험은, 직접적인 방법으로, GaAs 웨이퍼의 콘트라스트 반전 영상은 밴드갭의 지엽적인 변동이나 전하 재분포에 의한 것이 아니라 흡수와 산란의 두 메커니즘에 의한 것임을 증명하고 있다.