• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.861-863
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• 2003

In this work, the preparations and characteristics of capacitors and inductors for RF IC as a integrated devices are investigated. These kinds of capacitors and inductors can be applicable to the passive components utilized in voltage controlled oscillator(VCO), low noise amplifier(LAN), mixer and synthesizer for mobile telecommunication of radio frequency band(900 MHz to 2.2GHz), and in a library of monolithic microwave integrated circuit(MMIC). The results show that these inductors and capacitors array for RF IC may be applicable to the RF IC passive components for mobile telecommunication.

• Journal of Information Display
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• 제12권2호
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• pp.109-113
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• 2011

This paper summarizes the recent fabrication and characterizations of flexible high-speed radio frequency (RF) transistors, PIN-diode single-pole single-throw switches, as well as flexible inductors and capacitors, based on single-crystalline Si nanomembranes transferred on polyethylene terephthalate substrates. Flexible thin-film transistors (TFTs) on plastic substrates have reached RF operation speed with a record cut-off/maximum oscillation frequency ($f_T/f_{max}$) values of 3.8/12 GHz. PIN diode switches exhibit excellent ON/OFF behaviors at high RF frequencies. Flexible inductors and capacitors compatible with high-speed TFT fabrication show resonance frequencies ($f_{res}$) up to 9.1 and 13.5 GHz, respectively. Robust mechanical characteristics were also demonstrated with these high-frequency passives components.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권1호
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• pp.70-83
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• 2001

In this paper, the recent progress of RF MEMS research for wireless/mobile communications is reviewed. The RF MEMS components reviewed in this paper include RF MEMS switches, tunable capacitors, high Q inductors, and thin film bulk acoustic resonators (TFBARs) to become core components for constructing miniaturized on chip RF transceiver with multi-band and multi-mode operation. Specific applications are also discussed for each of these components with emphasis on for miniaturization, integration, and performance enhancement of existing and future wireless transceiver developments.

• 한국전기전자재료학회논문지
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• 제15권1호
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• pp.85-92
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• 2002

In this study, we analyzed and experimented micro-strip line inductors and capacitors for a SAW duplexer, an important devise for mobile communication. For SAW duplexers, micro-strip line lumped elements must have small impedance values, below several tens of nH or several tens of pF, and a small area pattern. In this study, we performed theoretical analysis of flat line type, meander line type, and spiral line type inductors and interdigital capacitors on a LiTaO$_3$ Piezo-crystal. We proposed a measurement method to evaluate small values of lumped elements accurately with network analyzer. In experiments, we confirmed validity of the theoretical analysis method through fabrication and characterization of micro-strip line lumped elements. The analysis method in this paper can be applied to SAW duplexers well as other microwave devices.

• Journal of Power Electronics
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• 제11권3호
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• pp.264-270
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• 2011

In this paper a novel passive snubber is proposed, which can suppress the voltage spike across the bridge leg of the isolated full-bridge boost topology. The snubber is composed of capacitors, inductors and diodes. Two capacitors connected in series are used to absorb the voltage spike and the energy of each capacitor can be transferred to the load during one switching cycle by the resonance of the inductors and capacitors. The operational principle of the passive snubber is analyzed in detail based on a three-phase power factor correction (PFC) converter, and the design considerations of both the converter and the snubber are given. Finally, a 3kW laboratory-made prototype is built. The experimental results verify the theoretical analysis and evaluations. They also prove the validity and feasibility of the proposed methods.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.139-142
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• 2001

As microeletronics technology continues to progress, there is also a continuous demand on highly integration and miniaturization of systems. For example, it is desirable to package several integrated circuits together in multilayer structure, such as multichip modules, to achieve higher levels of compactness and higher performance. Passive components (i.e., capacitors, resistors, and inductors) are very important for many MCM applications. In addition, the low-temperature co-fired ceramic (LTCC) process has considerable potential for embedding passive components in a small area at a low cost. In this paper, we investigate a method of statistically modeling integrated passive devices from just a small number of test structures. A set of LTCC inductors is fabricated and their scattering parameters (5-parameters) are measured for a range of frequencies from 50MHz to 5GHz. An accurate model for each test structure is obtained by using a building block based modeling methodology and circuit parameter optimization using the HSPICE circuit simulator.

• 한국전기전자재료학회논문지
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• 제15권4호
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• pp.344-348
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• 2002

As microelectronics technology continues to progress, there is also a continuous demand on highly integration and miniaturization of systems. For example, it is desirable to package several integrated circuits together in multilayer structure, such as multichip modules, to achieve higher levels of compactness and higher performance. Passive components (i.e., capacitors, resistors, and inductors) are very important fort many MCM applications. In addition, the low-temperature co-fired ceramic (LTCC) process has considerable potential for embedding passive components in a small area at a low cost. In this paper, we investigate a method of statistically modeling integrated passive devices from just a small number of test structures. A set of LTCC inductors is fabricated and their scattering parameters (s-parameters) are measured for a range of frequencies from 50MHz to 5GHz. An accurate model for each test structure is obtained by using a building block based modeling methodology and circuit parameter optimization using the HSPICE circuit simulator.

• Journal of Power Electronics
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• 제16권3호
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• pp.883-893
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• 2016

This paper presents a comprehensive analysis of the spurious turn-on phenomena in phase-shifted full-bridge (PSFB) converters. The conventional analysis of the spurious turn-on phenomenon does not establish in the PSFB converter as realizing zero voltage switching (ZVS). Firstly, a circuit model is proposed taking into account the parasitic capacitors and inductors of the transistors, as well as the parasitic elements of the power circuit loop. Second, an exhaustive investigation into the impact of all these parasitic elements on the spurious turn-on is conducted. It has been found that the spurious turn-on phenomenon is mainly attributed to the parasitic inductors of the power circuit loop, while the parasitic inductors of the transistors have a weak impact on this phenomenon. In addition, the operation principle of the PSFB converter makes the leading and lagging legs have distinguished differences with respect to the spurious turn-on problems. Design guidelines are given based on the theoretical analysis. Finally, detailed simulation and experimental results obtained with a 1.5 kW PSFB converter are given to validate proposed analysis.

• 한국인터넷방송통신학회논문지
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• 제23권4호
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• pp.59-64
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• 2023

본 논문은 전자기기에 사용되는 전원의 노이즈 저감을 위한 전도성(Conducted) EMI 필터의 경험적 설계를 통하여 제안하였다. 제안된 구조는 A형, B형, C형, D형의 구조를 설계하였으며, 다양한 X-커패스터와, Y-커패스터, Air-인덕터로 LC 네트워크 사용으로 전도성 노이즈 저감을 확인하였다. L1, L2는 10[μH]를 사용하였으며, C1, C2는 4.7[nF]를 사용하였다. 공통모드(Common Mode)용 L3는 13[μH]를 사용하였으며, C5, C6, C7은 10[nF]을 사용하여 설계하였다. 설계된 EMI 필터의 측정된 삽입손실 값은 3.2MHz에서 -74.4[dB], 4MHz에서 -75.4[dB], 13.56MHz에서 -75.3[dB]로 나타났다. 따라서 제안한 EMI 필터는 다양한 전자기기에 사용되는 전원 노이즈 저감에 이용될 것이다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 추계종합학술대회 논문집
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• pp.203-207
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• 1999

In this paper we report new integration technology developed for three-dimensional metallic microstructures in an arbitrary shape. We have developed the two fabrication methods: Multi-Exposure and Single-Development (MESD) and Sacrificial Metallic Mold(SMM) techniques. Three-dimensional photoresist mold can be formed by the MESD method while unlimited number of structural levels can be realized by the SMM technique. Using these two techniques we have fabricated solenoid inductors and levitated spiral inductors for RF applications. We have achieved peak Q- factors over 40 in the 2-10㎓ range, the highest number among the inductors reported to date. Finally, we propose "On-Chip Passives" as a post IC process for monolithic integration of inductors, tunable capacitors, microwave switches, transmission lines, and mixers and filters toward future single-chip transceiver integration.