• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.863-865
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• 2001

In this study, RuO$_2$thin films were etched in inductively coupled $O_2$plasma. Etching characteristics of RuO$_2$thin films including etch rate and selectivity were evaluated as a function of rf power in $O_2$plasma and gas mixing ratio in $O_2$/Ar plasma. In $O_2$ plasma, the etch rate of RuO$_2$thin film increases as rf power increases. In $O_2$/Ar plasma, the etch rate of RuO$_2$thin film increases up to 10% Ar, but decrease with furthermore increasing Ar mixing ratio. The enhanced etch rate can be obtained with increasing rf power and small addition of Ar gas.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 1999년도 학술대회논문집-국제 전기방전 및 플라즈마 심포지엄 Proceedings of 1999 KIIEE Annual Conference-International Symposium of Electrical Discharge and Plasma
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• pp.149-152
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• 1999

This paper represents the characteristic analyses for the etching in SF6 plasma and the plasma itself, based on the specific knowledges on the discharge mechanism of SF6 plasma which is widely used for the applications of dry etching, using Radio Frequency Inductively Coupled Plasma (RFICP) by measuring electron density, electron temperature then observing their relationship to find the effect of discharge mechanism of SF6 plasma to the etching in contrast to the existing method of finding optimal discharge condition by heuristic.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.846-848
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• 2002

A large-area (830mm ${\times}$ 1,020mm) inductively coupled plasma source with a six internal straight antennas was developed for large area FPD etch process applications and the effects of magnetic fields employing permanent magnets on the plasma characteristics were investigated. By employing the magnetic fields perpendicular to the six straight antenna currents using permanent magnets, improved plasma characteristics such as increase of the ion density and decrease of both electron temperature and plasma potential could be achieved in addition to the stability of the plasma possibly due to the reduction of the electron loss. However, the application of the magnetic field decreased the plasma uniformity slightly even though the uniformity within 10% could be maintained in the 800mm processing area.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.1111-1113
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• 1999

This paper represents the characteristic analysis for the etching in $SF_6$ plasma and the plasma itself, based on the specific knowledges on the discharge mechanism of $SF_6$ plasma which is widely used for the applications of dry etching, using Radio Frequency Inductively Coupled Plasma (RFICP) by measuring electron density, electron temperature then observing their relationship to find the effect of discharge mechanism of $SF_6$ plasma to the etching in contrast to the existing method of finding optimal discharge condition by heuristic.

• Applied Science and Convergence Technology
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• 제23권4호
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• pp.169-178
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• 2014

Fluid model based numerical analysis is done to simulate a low damage etch back system for 20 nm scale semiconductor fabrication. Etch back should be done conformally with very high material selectivity. One possible mechanism is three steps: reactive radical generation, adsorption and thermal desorption. In this study, plasma generation and transport steps are analyzed by a commercial plasma modeling software package, CFD-ACE+. Ar + $CF_4$ ICP was used as a model and the effect of reactive gas inlet position was investigated in 2D and 3D. At 200~300 mTorr of gas pressure, separated gas inlet scheme is analyzed to work well and generated higher density of F and $F_2$ radicals in the lower chamber region while suppressing ions reach to the wafer by a double layer conducting barrier.

• 한국표면공학회지
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• 제32권4호
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• pp.513-520
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• 1999

In this study, we investigated the effects of variously configured magnets on the characteristics of the plasmas to enhance plasma uniformity and density of an inductively coupled plasma source. As the magnets, Helmholtz type axial electromagnets and various multi-dipole magnets types around the chamber wall were used. To characterize the plasma as a function of the combination of the magnets and magnetic field strengths, ion density, electron temperature, and plasma potential were measured using an electrostatic probe along the chamber diameter for Ar plasmas. The measured maximum ion densities were $8$\times$10^{ 11}$$cm^{-3}$ with 600W inductive power and at 5mTorr of operational pressure and the uniformity of ion density was less than 5.9% at 2mTorr of operational pressure. The combination of an optimized multi-dipole magnet type and an axial electromagnet showed the lowest electron temperature (3eV) and plasma potential ($34V{p}$ )

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권2호
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• pp.79-82
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• 2004

The RF inductive discharge or inductively coupled plasma (ICP) continues to attract growing attention as an effective plasma source in many industrial applications, the best known of which are plasma processing and lighting technicology. Although most practical ICP operate at 13.56 [MHz]and 2.65 [MHz], the trend to reduce the operating frequency is clearly recognizable from recent ICP developments. In an electrodeless fluorescent lamp, the use of a lower operating frequency simplifies and reduces cost of rf matching systems and rf generators and can eliminate capacitive coupling between the inductor coil and plasma, which could be a strong factor in wall erosion and plasma contamination. In this study, the configuration of ferrite and fixture which operates at the frequency of 2.65[MHz]was discussed as functions of the ferrite thickness and distance by using the electromagnetic simulation software (Maxwell 2D).

• 한국재료학회지
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• 제10권3호
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• pp.179-183
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• 2000

$BCI_3/H_2/Ar$ ICP(Inductively Coupled Plasma)를 이용한 GaN이 건식식각에 있어서 공정변수들이 식각 특성에 미치는 영향을 분석하고 적정조건을 도출하였다. 연구 결과 식각속도와 측벽수직도 공히 ICP 전력, bias 전압과 $BCI_3$ 조성의 증가, 공정압력의 감소에 의해 현저히 증가하며, 온도의 증가에 따라 다소간 증가하였고, 온도의 증가에 따라 다소간 증가하였고, $BCI_3$조성이 가장 큰 영향을 미쳤다. 표면거칠기는 bias 전압 증가에 의해 크게 향상, $BCI_3$ 조성의 감소에 따라 향상되었으며 다른 변수는 큰 영향을 미치지 않았다. 결과적으로 ICP 전력 900W, bias 전압 400V, $BCI_3$ 조성 60%, 공정압력 4mTorr의 조건에서 175nm/min 정도의 $CI_2$ 사용 시와 유사한 높은 식각속도와 평탄한 표면이 얻어졌다. Bias 전압이 낮은 경우 식각 후 시료 표면에 $GaC_x$로 추정되는 식각부산물이 관찰되었다.

• 대한화학회지
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• 제41권6호
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• pp.292-298
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• 1997

유도코일을 5회 감고, 외측 석영관 길이를 일반적인 ICP(Inductively Coupled Plasma) 토오치에서 보다 50 mm 더 길게 제작한 수평형 ICP 방출원을 제작한 후, ICP 방출분광분석기를 구성하였다. 신호대 잡음비 및 바탕선의 세기를 고주파 출력, 시료 유량, 알곤가스 유량 그리고 차단가스 유량변화에 대하여 측정하고 최적조건을 구했다. 이들 조건에서,수직형 플라스마와 비교하여 분광분석학적으로 비슷한 정도의 특징을 가진 바탕선 스펙트럼을 파장범위 200~500 nm에서 얻었다. 납(II), 220.35 nm의 방출선에서 검출한계가 11 ppb로 산출되었으며, 수직형과 비교하여 약 5배 낮은 값을 보였다.

• Nuclear Engineering and Technology
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• 제49권3호
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• pp.645-650
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• 2017

This technical note demonstrates the feasibility of using laser ablation inductively coupled plasma mass spectrometry for the characterization of U-7Mo/Ale5Si dispersion fuel. Our measurements show 5.0% Relative Standard Deviation (RSD) for the reproducibility of measured $^{98}Mo/^{238}U$ ratios in fuel particles from spot analysis, and 3.4% RSD for $^{98}Mo/^{238}U$ ratios in a NIST-SRM 612 glass standard. Line scanning allows for the distinction of U-7Mo fuel particles from the Al-5Si matrix. Each mass spectrum peak indicates the presence of U-7Mo fuel particles, and the time width of each peak corresponds to the size of that fuel particle. The size of the fuel particles is estimated from the time width of the mass spectrum peak for $^{98}Mo$ by considering the scan rate used during the line scan. This preliminary application clearly demonstrates that laser ablation inductively coupled plasma mass spectrometry can directly identify isotope ratios and sizes of the fuel particles in U-Mo/Al dispersion fuel. Once optimized further, this instrument will be a powerful tool for investigating irradiated dispersion fuels in terms of fission product distributions in fuel matrices, and the changes in fuel particle size or shape after irradiation.