• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.8
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• pp.713-719
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• 2002

In this study, the vertically well-aligned CNTs were synthesized by DC bias-assisted inductively coupled plasma hot-filament chemical vapor deposition (ICPHFCVD) using radio-frequence plasma of high density and that CNTs were vertically grown on Ni(300 )/Cr(200 )-deposited glass substrates at 58$0^{\circ}C$. This system(ICPHFCVD) added to tungsten filament in order to get thermal decompound and DC bias in order to vertically grow to general Inductively Coupled Plasma CVD. The grown CNTs by ICPHFCVD were developed to higher graphitization and fewer field emission properties than those by general ICPCVD. In this system, DC bias was effect of vortical alignment to growing CNTs. The measured turn-on fields of field emission property by general ICPCVD and DC bias-assisted ICPHFCVD were 5 V/${\mu}{\textrm}{m}$ and 3 V/${\mu}{\textrm}{m}$, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.4
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• pp.55-60
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• 2002

This paper presents a technique for the preparation of vertically grown CNTs by ICPHFCVD(inductively coupled plasma hot filament chemical vapor deposition) below $580^{\circ}C$. Purification of the CNTs(carbon nanotubes) using RE(radio frequency) plasma in a one step process, based on the different etching property of the Ni-tip, amorphous carbon and carbonaceous materials is also discussed. After purifying the grown materials. CNTs shown the multi walled and hollow typed structure. The typical outer and inner diameters or CNT were 50 nm and 25 nm, respectively. The graphitic wall was composed of 82 layers and the distance between wall and wall was 0.34 nm. From the results of TEM observation, the Ni catalyst at the tip of the carbon nanotubes were effectively removed by using a RF plasma etching, continuously.

• Journal of the Korean Ceramic Society
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• v.39 no.2
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• pp.171-177
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• 2002

In this study, the vertical aligned carbon nanotubes was synthesized by DC bias-assisted Inductively Coupled Plasma Hot-Filament Chemical Vapor Deposition (ICPHFCVD). The substrate used CNTs growth was Ni(300 ${\AA}$)/Cr(200 ${\AA}$)-deposited one on glass by RF magnetron sputtering. R-F, DC bias and filament power during the growth process were 150 W, 80 W, 7∼8 A, respectively. The grown CNTs showed hollow structure and multi-wall CNTs. The top of grown CNT was found to Ni-tip that the CNT end showed to metaltip. The graphitization and field emission properties of grown was better than grown CNTs by ICPCVD. The turn-on voltage of CNT grown by DC bias-assisted ICPHFCVD showed about 3 V/${\mu}m$.