• Journal of the Korean Magnetics Society
• /
• v.5 no.5
• /
• pp.679-682
• /
• 1995

The observed high-field magnetization curves of $Sm_{2}Fe_{17}N_{3.0}$ at 4.2 K and 296 K are well reproduced by the calculation using the Sm-Fe exchange field $2\mu\textrm{B}H_{ex}\;=\;320\;K$ and two crystalline electric field parameters ${A_{0}}^{2}=\;-910\;K$ and ${A_{1}}^{0}=\;200\;K$. The calculation shows that during the magnetization process along the hard axis at 4.2 K, the Sm moment rotates toward the direction antiparallel to H when H < 110 kOe and then returns to the field direction with further increase of the field. At 296 K, the Sm moment rotates toward the direction antiparallel to H monotonously with increasing field and finally becomes antiparallel to H when $H{\geq}H_{A}=210\;kOe$. The particular magnetization process of the Sm moment can be explained by the field-induced noncollinear coupling between the spin and orbital moments of the Sm ion.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.27 no.2
• /
• pp.110-119
• /
• 2013

As the technologies such as middle-range resonant WPT (wireless power transfer) advance that utilizes medium and low-frequency magnetic field, the importance of safety of such magnetic field is growing. The research on the effect of electromagnetic field on the human body has been mainly done on the GHz range of mobile phones, or 50~60Hz range of electric power systems. However, there has been relatively few works on the 100kHz~10MHz range used in the resonant wireless power transfer. Since there is a difference in the limiting value of magnetic field between widely used ICNIRP EMF guideline and IEEE C95.1 standard, there can be possible confusion when establishing EMF (Electromagnetic Field) standard on the wireless power transfer device in the future. In this paper, the induced current in the human body, which is the basic restriction of the EMF guideline, is calculated using Quasi-static FDTD method when 3D high-resolution human model is exposed to the 100kHz~10MHz magnetic field. Using this result, the feasibility of the magnetic field reference level in the ICNIRP guideline is analyzed.

• Journal of Magnetics
• /
• v.20 no.1
• /
• pp.8-10
• /
• 2015

The magnetic anisotropy field plays an important role in spin-orbit-torque-induced magnetization dynamics with electric current injection. Here, we propose a magnetometric technique to measure the magnetic anisotropy field in nanostructured ferromagnetic thin films. This technique utilizes a magneto-optical Kerr effect microscope equipped with two-axis electromagnets. By measuring the out-of-plane hysteresis loops and then analyzing their saturated magnetization with respect to the in-plane magnetic field, the magnetic anisotropy field is uniquely quantified within the context of the Stoner-Wohlfarth theory. The present technique can be applied to small nanostructures, enabling in-situ determination of the magnetic anisotropy field of nanodevices.

• Korean Chemical Engineering Research
• /
• v.53 no.5
• /
• pp.627-631
• /
• 2015

Various solid structures were prepared by electrospray technique. In this process, liquid flows out from a capillary nozzle under a high electrical potential and is subjected to an electric field, which causes elongation of the meniscus to form a jet. In our study, by controlling the amount of polyvinyl pyrrolydone in precursor solution, the jet either disrupted into droplets for the formation of spherical particles or was stretched in the electric field for the formation of fibers. During the electrospray process, the ethanol solvent was evaporated and induced the solidification of precursors, forming solid particles. The evaporation of ethanol solvent also enhanced the mass transport of solutes from the inner core to the solid shell, which facilitated fabrication of porous and hollow structure. The network structures were also prepared by heating the collector.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.287.2-287.2
• /
• 2016

Silicon has considerably good characteristics on electron, hole mobility and its price. With 2-D sinlge-layer Graphene/n-Si heterojunction solar cell shows that in one sun condition exhibit power conversion efficiency(PCE) of 10.1%. This photovoltaic effect was achieved by applying gate voltage to the Schottky junction of the heterostructure solar cell. Energy band diagram shows that Schottky barrier between Si and graphene can be adjust by the external electric field. because of the fermi level of the graphene can be changed by external gate voltage, we can control the Schottkky barrier of the heterostructure solar cell. The ratio between generated power of solar cell and consumption electrical power is remarkable. Since we use the graphene as the top gate electrode, most of the sun light can penetrate into the active area.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2004.10a
• /
• pp.146-150
• /
• 2004

We researched carbon nanotube(CNT) cartridge as a CNT sample for the fabrication of nanotweezer which is composed of a couple of single CNT tip. Our CNT cartridge was made by dielectrophoretic methods, a kind of micromanipulation technique using electric field. Therein we intended to fabricate the CNT cartridge with just conventional function generators and a set of simple electrode. A knife edge and a flat metal electrode were employed as a couple of electrode, and these electrode pair faced each other with the gap. When the gap is filled with CNT suspension, we induced AC electric field into the gap. Then CNTs was attached on the sharp edge in knife edge by dielectrophoresis. This knife edge with attached CNTs is called as the CNT cartridge.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.50 no.8
• /
• pp.365-370
• /
• 2001

We have proposed and fabricated a new poly-Si TFT employing air-cavities at the edges of gate oxide in order to reduce the vertical electric field induced near the drain due to low dielectric constant of air. Air-cavity has been successfully fabricated by employing the wet etching of gate oxide and APCVD (Atmospheric pressure chemical vapor deposition) oxide deposition. Our experimental results show that the leakage current of the proposed TFT is considerably reduced by the factor of 10 and threshold voltage shift under high gate bias is also reduced because the carrier injection into gate insulator over the drain depletion region is suppressed.

• Proceedings of the KIEE Conference
• /
• 1989.07a
• /
• pp.432-435
• /
• 1989

This paper presents an algorithm for electric field analysis which is essential to insulation design of extra-high voltage oil-filled cable accessories using finite element method. Governing equation is induced by electromagnetic equation. Variational method is adopted for FEN formulation. Automatic mesh generation which saves time and labor is introduced for the input data. The application results of proposed algorithms were used for insulation design to develop 345kV cable joint.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.32A no.4
• /
• pp.47-56
• /
• 1995

In this paper the model of the MQE-IMD-based neural trigger circuit is improved, where MQW-IMD is a new semiconductor device proposed and experimentally demonstrated by the author for the hardware implementation of the neural networks. The electron energy of AlXGa1-XAsbarrier is calculated by Ensemble Monte Carlo simulation according to the variation of Al mole fraction x and the applied electric field, whtich had been roughly estimated in the previous paper because of the difficulty to get the data. And in the consideration of the tunneling of the confined electrons within the quantum well the accuracy of the impact ionization rate is enhaned. Finally, the dependance of the frequency of pulse-train on the number of quantum wells can be calculated by modelling the effect of the distance of the induced positive charge from the cathode on the electric field at the cathode.

• Journal of the Korean Society for Precision Engineering
• /
• v.20 no.6
• /
• pp.27-36
• /
• 2003

The Electro-Rheological (ER) fluid has been used to the ultraprecision polishing of single crystal silicon as new polishing slurry whose properties such as yield stress and particle structure changed with the application of an electric field. In this work, it is aimed to find the effective parameters in the ER fluid on material removal in the polishing system whose structure is similar to that of the simple hydrodynamic bearing. The generated pressure in the gap between a moving wall and a workpiece, as well as the electric field-induced stress of the mixture of ER fluid-abrasives, is evaluated experimentally, and their influence on the polishing of single crystal silicon is analyzed. Moreover, the behavior of abrasive and ER particles is described.