• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.722-725
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• 2003

In AC plasma display, it is very important to quantify the wall voltage induced by the wall charge accumulated on the dielectric surface. If we know the quantities of the wall voltage in each period of every sequence; reset period, address period and sustain period, then it helps us to design the optimal driving waveform for high efficiency plasma display. We develop a new method to measure the wall voltage with VDS (Versatile Driving Simulator) system. From this method the wall voltage induced by a wall charge profiles just after the reset discharge of every cells in plasma display panel can be investigated and analyzed successfully. It is noted that the wall voltage profiles are influenced by the space charge and then they are stabilized as time goes by. It is also noted that both the remaining wall charge at the previous sequence and space charges contribute to wall voltage quantities just after the reset discharge. It is noted that the wall charges contribute dominantly after a few hundreds microseconds, while the space charges have been decayed within 100 ${\mu}s$ just after the reset discharge.

• Korean Journal of Acupuncture
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• v.25 no.2
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• pp.33-41
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• 2008

Objectives : The aim of this study was to understand electro-physiological peculiarity in meridian and acupoints, and understand acupuncture therapy mechanism as an electro-physiological viewpoints. Methods : I reviewed the articles on the electro-physiological peculiarity of the meridian and acupoints Results and Conclusions : It has been reported that meridian and acupoints have high-electrical conductivity and row-electrical resistance. On this scientific basis, to understand the mechanism of acupuncture therapy, I made some hypotheses. At first, there is electro-property in meridian and acupoint. The second, energy flowing in meridian is related with electro-property. The third, there is electronic interaction between practitioner of acupuncture therapy and patient receiving acupuncture therapy. The forth, acupuncture effects which may be expressed by the electro-charge capacity is transfered between practitioner and patient via acupuncture. Electro-charge induced via acupuncture in practitioner may be an important factor that initiate the electro-charge changes in meridian and acupoint of patient.

• Nuclear Engineering and Technology
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• v.28 no.4
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• pp.397-404
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• 1996

The hydrogenated amorphous silicon (a-Si : H) holds good promise for radiation detection from its inherent merits over crystalline counterpart. For the application to alpha spectroscopy, the induced charge collection in a-Si : H pin detector diodes ons simulated based on a relevant non-uniform charge generation model. The simulation was peformed for the initial energy and the range of incident alpha particles, detector thickness and the operational parameters such as the applied reverse bias voltage and shaping time. From the simulation, the total charge collection was strongly affected by hole collection as expected. To get a reasonable signal generation, therefore, the hole collection should be seriously considered for detector operational parameters such as shaping time and reverse voltage etc. For the spectroscopy of alpha particle from common alpha sources, the amorphous silicon should have about 70${\mu}{\textrm}{m}$ thickness.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.1004-1009
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• 2003

Electroosmotic flow induced by an applied electrostatic potential field in microchannel is analyzed in this study. The electroosmotic flow is an alternative to pressure driven flow in microchannels, but the usage has been limited to the simple cases. In this study, We analyze electroosmotic flow driven by inhomogeneous surface charge on the channel wall. The surface charge varies along a direction perpendicular to the electric field in order to generate the electroosmotic flow. A numerical results substantiate the highly efficient mixing performance. It is highly the beneficial to fabrication process since only straight microchannel rather than complex geometry is enough to yield efficient mixing.

• Proceedings of the Korean Nuclear Society Conference
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• 1996.05d
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• pp.133-138
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• 1996

For the application of hydrogenated amorphous silicon (a-Si:H) p-i-n structural diode as the alpha particle spectroscopy, the induced charge collection was simulated based on a relevant non-uniform charge generation model. The simulation was accomplished for two extreme cases of the incident direction of alpha particle, p-and n-side, respectively. As expected, for the complete charge collection, the hole collection should be severely considered due to its poor mobility and the full depletion bias required. For the comparison of signal corresponding to the detector configuration or structure, although n-i-p configuration shows a wider range of linearity to the energy, p-i-n configuration is more suitable in the viewpoint of linearity and signal value for the considering energy range.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.287-287
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• 2011

ITRS(international technology roadmap for semiconductors)에 따르면 MOS (metal-oxide-semiconductor)의 CD(critical dimension)가 45 nm node이하로 줄어들면서 poly-Si/SiO2를 대체할 수 있는 poly-Si/metal gate/high-k dielectric이 대두되고 있다. 일반적으로 metal gate를 식각시 정확한 CD를 형성시키기 위해서 plasma를 이용한 RIE(reactive ion etching)를 사용하고 있지만 PIDs(plasma induced damages)의 하나인 PICD(plasma induced charging damage)의 발생이 문제가 되고 있다. PICD의 원인으로 plasma의 non-uniform으로 locally imbalanced한 ion과 electron이 PICC(plasma induced charging current)를 gate oxide에 발생시켜 gate oxide의 interface에 trap을 형성시키므로 그 결과 소자 특성 저하가 보고되고 있다. 그러므로 본 연구에서는 이에 차세대 MOS의 metal gate의 식각공정에 HDP(high density plasma)의 ICP(inductively coupled plasma) source를 이용한 중성빔 시스템을 사용하여 PICD를 줄일 수 있는 새로운 식각 공정에 대한 연구를 하였다. 식각공정조건으로 gas는 HBr 12 sccm (80%)와 Cl2 3 sccm (20%)와 power는 300 w를 사용하였고 200 eV의 에너지로 식각공정시 TEM(transmission electron microscopy)으로 TiN의 anisotropic한 형상을 볼 수 있었고 100 eV 이하의 에너지로 식각공정시 하부층인 HfO2와 높은 etch selectivity로 etch stop을 시킬 수 있었다. 실제 공정을 MOS의 metal gate에 적용시켜 metal gate/high-k dielectric CMOSFETs의 NCSU(North Carolina State University) CVC model로 effective electric field electron mobility를 구한 결과 electorn mobility의 증가를 볼 수 있었고 또한 mos parameter인 transconductance (Gm)의 증가를 볼 수 있었다. 그 원인으로 CP(Charge pumping) 1MHz로 gate oxide의 inteface의 분석 결과 이러한 결과가 gate oxide의 interface trap양의 감소로 개선으로 기인함을 확인할 수 있었다.

• Transactions on Electrical and Electronic Materials
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• v.3 no.3
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• pp.14-17
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• 2002

The HDP (High Density Plasma) CVD process consists of a simultaneous sputter etch and chemical vapor deposition. As CMOS process continues to scale down to sub- quarter micron technology, HDP process has been widely used fur the gap-fill of small geometry metal spacing in inter-metal dielectric process. However, HBP CVD system has some potential problems including plasma-induced damage. Plasma-induced gate oxide damage has been an increasingly important issue for integrated circuit process technology. In this paper, thin gate oxide charge damage caused by HDP deposition of inter-metal dielectric was studied. Multiple step HDP deposition process was demonstrated in this work to prevent plasma-induced damage by introducing an in-situ top SiH$_4$ unbiased liner deposition before conventional deposition.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1867-1869
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• 1999

Pulse electric field induced electron emission from ferroelectrics has been studied with Pb$(Zr_xTi_{1-x})O_3$ ceramics with varying Zr/Ti ratio from 35/65 to 65/35, Electron emission was proved to be concentrated on the electrode edge by emission profile test and emission capture photographs. The 65/35 composition showed largest emission charge in lowest field and lowest emission threshold field. The emission characteristics are closely dependent on their ferroelectric properties in hysteresis curve. Electron emission charge increases with the polarization charge and emission threshold voltage is dependent on coercive field regardless of their composition. But dielectric constant has little relation with emission property. Electron emission charge increases exponentially with pulse electric field irrespective of composition. On the assumption that the surface potential is linear with the pulse electric field, electron emission can be regarded as a field emission at the electrode edge using Fowler-Nordheim plot of ln$(Q_e/E_{fe})$ to $1/E_{fe}$.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.4
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• pp.483-489
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• 1995

To investigate the mechanism generated by irradiation in the insulator layer irradiated MIS (Metal - Insulator - Semiconductor) device, the various types of MIS capacitors depending on insulator thickness, insulator types and implanted impurities are fabricated on the P-type wafer. MIS capacitors exposed by 1Mrad Co$^{60}$ .gamma.-ray are measured for flat band voltage and charge density shifts pre- and post-irradiation. The measuring results of post-irradiation show the flat band voltage shifting toward negative direction and charge density increasing regardless of parameters. This results have a good agreement with calculated data by computer simulation. Si$_{3}$N$_{4}$ layers have a good radiation-hardness than SiO$_{2}$ layers compared to the results of post-irradiation. Also, radiation-induced negative trap is discovered in the implanted insulator layer. Using numerical analysis, four continuty equations (conduction-band electrons continuity equation, valence-band holes continuity equation, trapped electrons continuity equation, trapped holes continuity equation) are solved and charge distributions according to the distance and Si-Insulator interface states are investigated.

• The KIPS Transactions:PartA
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• v.15A no.4
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• pp.211-216
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• 2008

In this paper we fabricated and measured the $0.26{\mu}m$ NMOSFET with wet gate oxide and nitride oxide gate to compare that the charateristics of hot carrier effect, charge to breakdown, transistor Id_Vg curve, charge trapping, and SILC(Stress Induced Leakage Current) using the HP4145 device tester. As a result we find that the characteristics of nitride oxide gate device better than wet gate oxide device, especially hot carrier lifetime(nitride oxide gate device satisfied 30 years, but the lifetime of wet gate oxide was only 0.1 year), variation of Vg, charge to breakdown, electric field simulation and charge trapping etc.