• 한국세라믹학회지
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• 제51권5호
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• pp.386-391
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• 2014

Silicon nitride ($Si_3N_4$) is regarded as one of the most promising materials for high temperature structural applications due to its excellent mechanical properties at both room and elevated temperatures. However, one high-temperature $Si_3N_4$ material intended for use in radomes has a relatively high dielectric constant of 7.9 - 8.2 at 8 - 10 GHz. In order to reduce the dielectric constant of the $Si_3N_4$, an in-situ reaction process was used to fabricate $Si_3N_4-SiO_2$-BN composites. In the present study, an in-situ reaction between $B_2O_3$ and $Si_3N_4$, with or without addition of BN in the starting powder mixture, was used to form the composite. The in-situ reaction process resulted in the uniform distribution of the constituents making up the composite ceramic, and resulted in good flexural strength and dielectric constant. The composite was produced by pressure-less sintering and hot-pressing at $1650^{\circ}C$ in a nitrogen atmosphere. Microstructure, flexural strength, and dielectric properties of the composites were evaluated with respect to their compositions and sintering processes. The highest flexural strength (193 MPa) and lowest dielectric constant (5.4) was obtained for the hot-pressed composites. The strength of these $Si_3N_4-SiO_2$-BN composites decreased with increasing BN content.

• 센서학회지
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• 제26권6호
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• pp.438-444
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• 2017

In this paper, we focus on optimization of the in-situ phosphorous (P) doping of low-pressure chemical vapor deposited (LPCVD) poly Si resistors for obtaining near-zero temperature coefficient of resistance (TCR) at temperature range from 25 to $600^{\circ}C$. The deposited poly Si films were annealed by rapid thermal anneal (RTA) process at the temperature range from 900 to $1000^{\circ}C$ for 90s in nitrogen ambient to relieve intrinsic stress and decrease the TCR in the poly Si layer and get the Ohmic contact. After the RTA process, a roughness of the thin film was slightly changed but the grain size and crystallinity of the thin film with the increase in anneal temperature. The film annealed at $1,000^{\circ}C$ showed the behavior of Schottky contact and had dislocations in the films. Ohmic contact and TCR of $334.4{\pm}8.2$ (ppm/K) within 4 inch wafer were obtained in the measuring temperature range of 25 to $600^{\circ}C$ for the optimized 200 nm thick-poly Si film with width/length of $20{\mu}m/1,800{\mu}m$. This shows the potential of in-situ P doped LPCVD poly Si as a resistor for pressure sensor in harsh environment applications.

• 한국지반공학회논문집
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• 제36권9호
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• pp.45-55
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• 2020

X-ray CT는 암석시편의 공극 및 균열과 같은 내부 미세구조와 손상들의 정량적 분석에 활용되어 왔다. 원위치 CT는 외력 등 다양한 외적 요인에 영향을 받고 있는 암석 시편의 내외부 변화 과정을 관찰할 수 있게 해준다. 이의 확인을 위해, 암반/지반재료 특성분석에 활용한 원위치 X-ray CT 기술에 관한 최신 연구동향을 파악하였으며, 원위치 CT이미징이 가능한 암석의 수리-역학적 실험용 삼축셀을 개발하였다. 직경 25~50 mm 화강암 및 사암 코아시편의 원위치 CT이미징이 성공적으로 진행되었으며, 34~105 ㎛ 범위의 픽셀피치의 해상도를 취득할 수 있었다. 본 사전검토 촬영 실험을 통해 마이크로미터 스케일에서 암석의 내부구조 변화의 원위치 CT관찰이 가능한 것을 파악하였다. 요오드화 칼륨 용액은 CT이미지의 대비를 증가시키고 암석의 수리-역학 실험에서 주입유체로 사용할 수 있다.

• Bulletin of the Korean Chemical Society
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• 제33권2호
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• pp.492-498
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• 2012

A hyper branched 10-butylphenothiazine with in-situ thermally curable methacrylate (1,3,5-tris-[$\{$10-Butyl-3-(4-(2-methyl-acryloyloxy)-phenyl)-7-yl-10H-phenothiazine$\}$]-benzene, (tris-PTMA)) was synthesized successfully. From the TGA thermogram of tris-PTMA was thermally stable up to $336^{\circ}C$. In the first heating scan of DSC thermogram, tris-PTMA showed glass transition temperature (Tg) at $140^{\circ}C$ and broad endothermic process in the region of $144-179^{\circ}C$, which is thermally curing temperature. In the second heating process, $T_g$ exhibited at $158.7^{\circ}C$ and endothermic process was not observed. Thermally cured tris-PTMA showed no big change in the UV-visible spectrum after washing with organic solvent such as methylene chloride, chloroform, toluene, indicating that thermally cured film was very good solvent resistance. Thermally cured tris-PTMA was electrochemically stable and the HOMO energy level of tris-PTMA was -5.54 eV. The maximum luminance efficiency of double layer structured polymer light-emitting diode based on in-situ thermally cured tris-PTMA was 0.685 cd/A at 16.0 V, which was higher than that of the device without thermally cured tris-PTMA (0.348 cd/A at 15.0 V).

• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2001년도 봄 학술발표회 논문집
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• pp.405-410
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• 2001

Bioremediation is a degradation process of existing organic contaminants in soils and groundwater by indigenous or inoculated microorganisms. This process can provide economical solution as well as safe and effective alternative in remediation technologies. However, it has been suggested that the rate of bioremediation process of organic contaminants by microorganisms can be limited by the concentration of nutrients and TEAs(Terminal Electron Accepters). In in-situ bioremediation, conventional pumping techniques have been used for supplying these additives. However, the injection of these additives is difficult in low permeable soils, and also hindered by preferential flow paths resulting from heterogeneities in high permeable ground. Therefore, the Injection of chemical additives is the most significant concern in in-situ bioremediation. Most recently, electrokinetic technique has been applied into the bioremediation and the injection characteristics under electrokinetics have not been examined in various soil types. Therefore, in this study, electrokinetic injection method is investigated in kaolinite and sand, and the concentration of ammonium(nutrients) and sulfate(TEAs) in soil is presented.

• Composites Research
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• 제12권3호
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• pp.36-44
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• 1999

In-situ process에 의한 $Al_2O_{3p}/Al$기 복합재료 제조시, Mg의 첨가형태와 함량, 공정온도 및 유지시간이 응용Al의 침투거동과 미세조직 및 경도에 미치는 영향을 조사하였다. Mg분말과 $Al_2O_3$입자의 혼합분말에 순 Al을 침투시켜 복합재를 제조하는 경우, 침투율에 영향을 주는 가장 유력한 변수는 Mg분말의 함량이며, Mg의 활발한 반응으로 $700^{\circ}C$의 낮은 온도에서도 침투가 가능했다. 한편 Al-Mg합금을 $Al_2O_3$입자에 침투시켜 복합재를 제조하는 경우 Mg함량과 공정온도에 관계없이 거의 동일한 침투율을 나타냈으며 침투 가능한 공정온도는 $800^{\circ}C$이었다. Mg과 $Al_2O_3$의 혼합분말로 제조한 복합재가 Al-Mg합금으로 제조한 복합재 보다 월등히 높은 경도를 나타냈으나, 과도한 계면방응에 의한 불균일한 강화상의 분산으로 경도의 산포도는 컸다.

• 한국전기전자재료학회논문지
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• 제28권10호
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• pp.665-669
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• 2015

We investigated and compared two methods of in-situ oxidation and chemical etching treatment (CET) to remove the boron rich layer (BRL). The BRL is generally formed during boron doping process. It has to be controlled in order not to degrade carrier lifetime and reduce electrical properties. A boron emitter is formed using $BBr_3$ liquid source at $930^{\circ}C$. After that, in-situ oxidation was followed by injecting oxygen of 1,000 sccm into the furnace during ramp down step and compared with CET using a mixture of acid solution for a short time. Then, we analyzed passivation effect by depositing $Al_2O_3$. The results gave a carrier lifetime of $110.9{\mu}s$, an open-circuit voltage ($V_{oc}$) of 635 mV at in-situ oxidation and a carrier lifetime of $188.5{\mu}s$, an $V_{oc}$ of 650 mV at CET. As a result, CET shows better properties than in-situ oxidation because of removing BRL uniformly.

• 반도체디스플레이기술학회지
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• 제20권3호
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• pp.27-31
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• 2021

VI probe, which is one of various in-situ plasma monitoring sensor, is frequently used for in-situ process monitoring in mass production environment. In this paper, we correlated the plasma etch results with VI probe data with the small amount of gas flow rate changes to propose usefulness of the VI probe in real-time process monitoring. Several different sized contact holes were employed for the etch experiment, and the etched profiles were measured by scanning electron microscope (SEM). Although the shape of etched hole did not show satisfactory relationship with VI probe data, the chamber status changed along the incremental/decremental modification of the amount of gas flow was successfully observed in terms of impedance monitoring.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 춘계학술대회
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• pp.1407-1411
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• 2003

Due to the heat confinement in the shallow region of the target for a short time scale, pulsed laser annealing has received increasing interest for the fabrication of poly-Si thin film transistors(TFTs) on glass as a low cost substrate in the flat panel displays. The formation and growth mechanisms of poly silicon(poly-Si) grains in thin films are investigated using an excimer laser crystallization system. To understand the crystallization mechanism, the grain formations are observed by FESEM analysis. The optical reflectance and transmittance during the crystallization process are measured using HeNe laser optics. A two-step ELC(Excimer Laser Crystallization) process is applied to enhance the grain formation uniformity.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.464-464
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• 2010

A few years ago, for maintaining high stability and production yield of production equipment in a semiconductor fab, on-line monitoring of wafers is required, so that semiconductor manufacturers are investigating a software based process controlling scheme known as virtual metrology (VM). As semiconductor technology develops, the cost of fabrication tool/facility has reached its budget limit, and reducing metrology cost can obviously help to keep semiconductor manufacturing cost. By virtue of prediction, VM enables wafer-level control (or even down to site level), reduces within-lot variability, and increases process capability, $C_{pk}$. In this research, we have practiced VM on $SiO_2$ etch rate with optical emission spectroscopy(OES) data acquired in-situ while the process parameters are simultaneously correlated. To build process model of $SiO_2$ via, we first performed a series of etch runs according to the statistically designed experiment, called design of experiments (DOE). OES data are automatically logged with etch rate, and some OES spectra that correlated with $SiO_2$ etch rate is selected. Once the feature of OES data is selected, the preprocessed OES spectra is then used for in-situ sensor based VM modeling. ICP-RIE using 葰.56MHz, manufactured by Plasmart, Ltd. is employed in this experiment, and single fiber-optic attached for in-situ OES data acquisition. Before applying statistical feature selection, empirical feature selection of OES data is initially performed in order not to fall in a statistical misleading, which causes from random noise or large variation of insignificantly correlated responses with process itself. The accuracy of the proposed VM is still need to be developed in order to successfully replace the existing metrology, but it is no doubt that VM can support engineering decision of "go or not go" in the consecutive processing step.