• 한국전기전자재료학회논문지
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• 제13권2호
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• pp.95-100
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• 2000

For the well-controlled growing in-situ heavily phosphorus doped polycrystalline Si films directly on Si wafer by reduced pressure chemical vapor deposition, a study is made of the two step growth. When in-situ heavily phosphorus doped Si films were deposited directly on Si (100) wafer, crystal structure in the film is not unique, that is, the single crystal to polycrystalline phase transition occurs at a certain thickness. However, the well-controlled polycrtstalline Si films deposited by two step growth grew directly on Si wafers. Moreover, the two step growth, which employs crystallization of grew directly on Si wafers. Moreover, the two step growth which employs crystallization of amorphous silicon layer grown at low temperature, reveals crucial advantages in manipulating polycrystal structures of in-situ phosphorous doped silicon.

• 한국전기전자재료학회논문지
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• 제13권2호
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• pp.125-130
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• 2000

Two step growth of reduced pressure chemical vapor eposition has been successfully developed to achieve in-situ phosphorus-doped silicon epilayers, and the characteristic evolution on their microstructures has been investigated using scanning electron microscopy, transmission electron microscopy, and secondary ion mass spectroscopy. The two step growth, which employs heavily in-situ P doped silicon buffer layer grown at low temperature, proposes crucial advantages in manipulating crystal structures of in-situ phosphorus doped silicon. In particular, our experimental results showed that with annealing of the heavily P doped silicon buffer layers, high-quality epitaxial silicon layers grew on it. the heavily doped phosphorus in buffer layers introduces into native oxide and plays an important role in promoting the dispersion of native oxides. Furthermore, the phosphorus doping concentration remains uniform depth distribution in high quality single crystalline Si films obtained by the two step growth.

• Carbon letters
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• 제14권4호
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• pp.228-233
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• 2013

In this work, we report in-situ observations of changes in catalyst morphology, and of growth termination of individual carbon nanotubes (CNTs), by complete loss of the catalyst particle attached to it. The observations strongly support the growth-termination mechanism of CNT forests or carpets by dynamic morphological evolution of catalyst particles induced by Ostwald ripening, and sub-surface diffusion. We show that in the tip-growth mode, as well as in the base-growth mode, the growth termination of CNT by dissolution of catalyst particles is plausible. This may allow the growth termination mechanism by evolution of catalyst morphology to be applicable to not only CNT forest growth, but also to other growth methods (for example, floating-catalyst chemical vapor deposition), which do not use any supporting layer or substrate beneath a catalyst layer.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2004년도 High Temperature Superconductivity Vol.XIV
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• pp.18-18
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• 2004

• 한국세라믹학회지
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• 제33권2호
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• pp.203-213
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• 1996

In this study the subcritical crack growth behavior in an Al2O3-SiCw composite has been investigated using in situ fracture technique of applied moment double cantilever beam (AMDCB) specimens indside an SEM. This technique allows the detailed observation of whisker and grain bridging in the crack wake region. The experimental results indicated that the KI-a curve was deviated from the conventional powder law form and that the existed a region where the rate of microcrack growth was decreased with increasing the externally applied stress intensity factor. This behavior could be explained by arising crack growth resistance i.e. R-curve behavior which was associated with crack shielding due to whisker and grain bridging. The R-curve was also analyzed from the KI-a curve data in order to quantify the bridging effect in the Al2O3-SiCw composite.

• Asian Pacific Journal of Cancer Prevention
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• 제13권6호
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• pp.2823-2828
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• 2012

Objective: To explore a new model of in-situ xenograft lymphangiogenesis of human colonic adenocarcinomas in nude mice. Method: On the basis of establishing subcutaneous xenograft lymphangiogenesis model of human colonic adenocarcinoms, in-situ xenografts were established through the in situ growth of the HT-29 human colonic adenocarcinoma cell line in nude mice. The numbers of lymphangiogenic microvessels, the expression of lymphatic endothelial cell markers lymphatic vessel endothelial hyaloronic acid receptor-1 (LYVE-1), D2-40 and the lymphatic endothelial growth factors vascular endothelial growth factor-C (VEGF-C), -D (VEGF-D) and receptor-3 (VEGFR-3) were compared by immunohistochemical staining, Western bolt and quantitative RT-PCR in xenograft in-situ models. Results: Some microlymphatics with thin walls, large and irregular or collapsed cavities and increased LMVD, with strong positive of LYVE-1, D2-40 in immunohistochemistry, were observed, identical with the morphological characteristics of lymphatic vessels and capillaries. Expression of LYVE-1 and D2-40 proteins and mRNAs were significantly higher in xenograpfts in-situ than in the negative control group(both P<0.01). Moreover, the expression of VEGF-C, VEGF-D and VEGFR-3 proteins and mRNAs were significantly higher in xenografts in-situ (both P<0.01), in conformity with the signal regulation of the VEGF-C,-D/VEGFR-3 axis of tumor lymphangiogenesis. Conclusions: In-situ xenografts of a human colonic adenocarcinoma cell line demonstrate tumor lymphangiogenesis. This novel in-situ animal model should be useful for further studying mechanisms of lymph node metastasis, drug intervention and anti-metastasis therapy in colorectal cancer.

• 멤브레인
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• 제28권2호
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• pp.129-135
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• 2018

ZIFs (Zeolitic imdazolate frameworks)은 높은 화학적 열적 안정성, 높은 비표면적과 조절 가능한 기공구조로 최근 분리막 소재로 큰 관심을 받고 있다. 본 연구에서는 두 가지 종류의 다공성 지지체(${\alpha}$-alumina 및 YSZ)를 사용하여 in situ 성장법으로 ZIF-8 분리막을 합성하고, $H_2/CO_2$ 기체 투과 특성을 조사하였다. 결함 없는 ZIF-8층을 합성하는데 있어, 기공이 작은 YSZ 지지체는 ${\alpha}$-alumina 지지체 보다 더 적은 시간이 요구되었다. 합성시간이 3 h인 경우, ${\alpha}$-alumina 및 YSZ 지지체위에 형성된 ZIF-8 분리막은 약 10 정도의 $H_2/CO_2$ 선택도를 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.54-58
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• 1994

H$_2$ bake and GeH$_4$ clean are used as a in-situ pre-clean method in low temperature Si based epitaxial growth technology using rapid thermal processing chemical vapor deposition (RTPCVD). In this paper, the H$_2$ bake and GeH$_4$ clean processes are optimized for low surface defect density using Taguchi method. In H$_2$ bake process, the epitaxial growth temperature affects dominantly on the surface defect density, and the next affecting factors are H$_2$ bake temperature and rinse time in de-ionised water. In GeH$_4$ clean process, GeH$_4$ clean temperature affects most strongly on the surface defect density, and the minor factor is GeH$_4$flow rate. The optimum process conditions predicted fly Taguchi method agree well with tile experimental data in both in-situ clean processes.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2009년도 정기총회 및 동계학술연구발표회
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• pp.190-190
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• 2009

We report the epitaxial growth of MgO and CoFe/MgO on Ge (001) substrates using molecular beam epitaxy. It was found that the epitaxial growth of a MgO film on Ge could be realized at a low growth temperature of $125{\pm}5^{\circ}C$ and the MgO matches the Ge with a cell ratio of $\sqrt{2}$:1 which renders MgO rotated by $45^{\circ}$ relative to Ge. In-situ and ex-situ structural characterizations reveal the epitaxial crystal growth of bcc CoFe/MgO on Ge with the in-plane crystallographic relationship of CoFe(001)[100] || MgO(001)[110] || Ge(001)[100], exhibiting sharp interfaces in the (001) matching planes. The saturation magnetization of the sample is $1430{\pm}20$ emu/cc, which is comparable to the value of bulk CoFe.

• 한국지하수토양환경학회:학술대회논문집
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• 한국지하수토양환경학회 2001년도 총회 및 춘계학술발표회
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• pp.73-76
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• 2001

We have simulated the effect of fracture characteristics on reduction of effective permeability of the fractured rocks due to in-situ bacteria growth. A nutrient is injected continuously for growth of in-situ bacteria. We used a power law for fracture length distribution and a fBm for fracture aperture spatial distribution. The results show that in-situ bacteria growth reduces the Permeability hyperbolically, but the porosity of backbone fracture does not change significantly. It shows that reduction of the permeability proceeds at faster speed for smaller value of length exponent(a) and for larger value of Hurst exponent(H). The fracture length distribution has stronger effect on speed of reduction than the aperture spatial distribution. The time needed to reduce permeability is inversely proportional to the hydraulic gradient.