• Bulletin of the Korean Chemical Society
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• v.5 no.2
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• pp.55-60
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• 1984

The NMR shift arising from the electron angular momentum and electron spin dipolar-nuclear spin angular momentum interactions has been investigated for a $4d^1$system in a strong crystal field environment of tetragonal symmetry. A general formula for NMR shift is used to compute the NMR shifts along the (100), (010), (001), (110) and (111) axes. We find that from the computed results, the NMR shift along the (100) and (010) axes is consistent with each other in a strong crystal field environment of tetragonal symmetry, but the NMR shift along the (001) axis is about triply greater in magnitude than those along the (100) and (010) axes and is opposite in sign to those along (100) and (010) axes. In this work, we express the expansion coefficients $a_1^{(i)}$ and $b_1^{(i)}$ of $A_i$ and $B_i$ in terms of $g_m^{(i)}$ and $h_m^{(i)}$ and two matrices $c_{lm}$ and $d_{lm}$ of radial dependence. The NMR shift is also separated into the contributions of multipolar terms. We find that $1/R^3$ term contributes dominantly to the NMR shift along the (100), (010), (001) and (110) axes while along the (111) axis $1/R^5$ term dominantly contributes. However, the contribtions of the other terms may not be negligible.

• Progress in Superconductivity and Cryogenics
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• v.16 no.4
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• pp.7-16
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• 2014

Rare-earth barium copper oxide (REBCO) coated conductor (CC) tapes have already been commercialized but still possess some issues in terms of manufacturing cost, anisotropic in-field performance, $I_c$ response to mechanical loads such as delamination, homogeneity of current transport property, and production length. Development on improving its performance properties to meet the needs in practical device applications is underway and simplification of the tape's architecture and manufacturing process are also being considered to enhance the performance-cost ratio. As compared to low temperature superconductors (LTS), high temperature superconductor (HTS) REBCO CC tapes provide a much wider range of operating temperature and a higher critical current density at 4.2 K making it more attractive in magnet and coil applications. The superior properties of the REBCO CC tapes under magnetic field have led to the development of superconducting magnets capable of producing field way above 23.5 T. In order to achieve its optimum performance, the electromechanical properties under different deformation modes and magnetic field should be evaluated for practical device design. This paper gives an overview of the effects of mechanical stress/strain on $I_c$ in HTS CC tapes due to uniaxial tension, bending deformation, transverse load, and including the electrical performance of a CC tape joint which were performed by our group at ANU in the last decade.

• Journal of Mechanical Science and Technology
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• v.20 no.2
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• pp.262-270
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• 2006

Direct numerical simulations (DNS) of turbulent channel flows up to $Re_{\tau}=1270$ are performed to investigate an elliptic feature and strain rate field on cross sections of coherent fine scale eddies (CFSEs) in wall turbulence. From DNS results, the CFSEs are educed and the strain rate field around the eddy is analyzed statistically. The principal strain rates (i.e. eigenvalues of the strain rate tensor) at the CFSE centers are scaled by the Kolmogorov length $\eta$ and velocity $U_k$. The most expected maximum (stretching) and minimum (compressing) eigenvalues at the CFSE centers are independent of the Reynolds number in each $y^+$ region (i. e. near-wall, logarithmic and wake regions). The elliptic feature of the CFSE is observed in the distribution of phase-averaged azimuthal velocity on a plane perpendicular to the rotating axis of the CFSE $(\omega_c)$. Except near the wall, phase-averaged maximum $(\gamma^{\ast}/\gamma_c^{\ast})$ and minimum $(\alpha^{\ast}/\alpha_c^{\ast})$ an eigenvalues show maxima on the major axis around the CFSE and minima on the minor axis near the CFSE center. This results in high energy dissipation rate around the CFSE.

• Journal of the Korean Mathematical Society
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• v.54 no.4
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• pp.1163-1173
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• 2017

In this paper, we introduce the condition (I) (cf. Section 2) and prove that there is no nontrivial tangential holomorphic vector field of a certain hypersurface of infinite type in ${\mathbb{C}}^2$.

• 전기의세계
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• v.26 no.4
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• pp.68-72
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• 1977

The main purpose of this paper is to study on the nature of the traps in polymer. The polyethlene is typical of polymer material as to be selected for a sample. The current I$_{th}$ are obtained with an small external bias voltage from high density polyethylene which have been treated by the high-field application. Two peaks, P$_{1}$ and P$_{2}$ with maxima near 85.deg. C, respectively, appeared on the current I$_{th}$ spectrum. From the results of experiment, It is clear that The current I$_{th}$ arises from the drift, under the external field, of carriers released from the trap sites by the heating and the trap is surrounded by a potential barrier and trapping proceeds during the high-field treatment. The obtained results can suggest that polyethylene contains trap sites which have an important role in the electrical conduction and breakdown of polymeric materials.rials.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.134-139
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• 1998

Amorphous fluorocarbon (a-C:F) is of interest for low dielectric interlayer material, but in this work we applied this material to FED field emitter. N-doped a-C:F films were deposited by inductively coupled plasma chemical vapor deposition (ICPCVD). The Raman spectra were measured to study the film structure and inter-band optical absorption coefficients were measured using Perkin-Elmer UV-VIS-IR spectrophotometer and optical band gap was obtained using Tauc's plot. XPS spectrum and AFM image were investigated to study bond structure and surface morphology. Current-electric field(I-E) characteristic of the film was measured for the characterization of electron emission properties. The optimum doping concentration was found to be [N2]/[CF4]=9% in the gas phase. The turn-on field and the emission current density at $[N_2]/[CF_4]$=9% were found to be 7.34V/$\mu\textrm{m}$ and 16 $\mu\textrm{A}/\textrm{cm}^2$ at 12.8V/$\mu\textrm{m}$, respectively.

• Journal of the Korean Ceramic Society
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• v.54 no.2
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• pp.150-157
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• 2017

Three types of piezoelectric single crystals [PMN-PT (Generation I $[Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3]$), PMN-PZT (Generation II $[Pb(Mg_{1/3}Nb_{2/3})O_3-Pb(Zr,Ti)O_3]$), PMN-PZT-Mn (Generation III)] were grown by the solid-state single crystal growth (SSCG) method, and their dielectric and piezoelectric properties were measured and compared. Compared to (001) PMN-PT and PMN-PZT single crystals, the (001) PMN-PZT-Mn single crystals exhibited a higher transition temperature between the rhombohedral and tetragonal phases ($T_{RT}=144^{\circ}C$), as well as a higher coercive electric field ($E_C=6.3kV/cm$) and internal bias field ($E_I=1.6kV/cm$). The (011) PMN-PZT-Mn single crystals showed the highest coercive electric field ($E_C=7.0kV/cm$), and the highest stability of $E_C$ and $E_I$ during 60 cycles of polarization measurement. These results demonstrate that both Mn doping (for higher electromechanical quality factor ($Q_m$)) and a (011) crystallographic orientation (for higher coercive electric field and stability) are necessary for high power transducer applications of these piezoelectric single crystals. Specifically, the (011) PMN-PZT-Mn single crystal (Gen. III) had the highest potential for application in the fields of SONAR transducers, high intensity focused ultrasound (HIFU), ultrasonic motors, and others.

• Proceedings of the KIEE Conference
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• 1999.11b
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• pp.21-23
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• 1999

In this paper, the analysis of the electric field in the chamber of high voltage $SF_6$ GCB(Gas Circuit Breaker) is presented by using C-1 FEM. For this purpose, pre-processing program and post-processing program were developed for axisymmetirc 3 dimensional analysis and the electric field in cylindric chamber was analyzed. Important problem is that electric analysis must be considered coronal due to break-down of $SF_6$ when it is cutted off. To solve this problem, a procedure is needed to verify that the solution of Poisson's equation for scalar potential satisfy charge continuos condition because of using first order element os not satisfy the electric continuous condition, C-1 FEM is introduce to obtain electirc potential and electric field at the same time. Analysis of the distribution of electric field on model was done. It is confirmed that the developed program in this paper applicable to design and to analyze of characteristics in total program as electric characteristics analysis routine.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.350-353
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• 2002

High voltage SiC Schottky barrier diodes with field plate structure have been fabricated and characterized. N-type 4H-SiC wafer with an epilayer of ∼10$\^$15/㎤ doping level was used as a starting material. Various Schottky metals such as Ni, Pt, Ta, Ti were sputtered and thermally-evaporated on the low-doped epilayer. Ohmic contact was formed at the backside of the SiC wafer by annealing at 950$^{\circ}C$ for 90 sec in argon using rapid thermal annealer. Field oxide of 550${\AA}$ in thickness was formed by a wet oxidation process at l150$^{\circ}C$ for 3h and subsequently heat-treated at l150$^{\circ}C$ for 30 min in argon for improving oxide quality. The turn-on voltages of the Ni/4H-SiC Schottky diode was 1.6V which was much higher than those of Pt(1.0V), Ta(0.7V) and Ti(0.7). The voltage drop was measured at the current density of 100A/$\textrm{cm}^2$ showing 2.1V for Ni Schottky diode, 1.45V for Pt 1.35V, for Ta, and 1.25V for Ti, respectively. The maximum reverse breakdown voltage was measured 1100V in the file plated Schottky diodes with 101an thick epilayer.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.319-325
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• 1999

Direct current(d.c.)leakage current voltage characteristics of radio-frequencymagnetron sputtered BaTa\sub 2\O\sub 6\ film capacitors with aluminum(A1) top and indium tin oxide (ITO) bottom electrodes have been investigatedas a function of applied field and temperature. In order to study surfacetreatment effect on the electrical characteristics of as-deposited film weperformed exposure of oxygen plasma on $BaTa_2O_6$ surface. d. c.current-voltage (I-V), bipolar pulse charge-voltage (Q-V), d. c. current-time (I-t) andcapacitance-frequency (C-f) analysis were performed on films. All ofthe films exhibita low leakage current, a high breakdown field strength (3MV/cm-4.5MV/cm), and high dielectric constant (20-30). From the temperature dependence of leakage current,we can conclude that the dominant conduction mechanism is ascribed toSchottky emission at high electric field (>1MV/cm) and hopping conduction at lowelectric field (<1MV/cm). According to our results, the oxide plasma surfacetreatmenton as-deposited $BaTa_2O_6$ resulted in lowering interfacebarrier height and thus, leakage current when a negative voltage applied to the A1 electrode. This can be explained by reduction of surface contamination via etching surface and filling defects such as oxygen vacancies.