• Title/Summary/Keyword: in situ stress

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In situ horizontal stress effect on plastic zone around circular underground openings excavated in elastic zones

  • Komurlu, Eren;Kesimal, Ayhan;Hasanpour, Rohala
    • Geomechanics and Engineering
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    • v.8 no.6
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    • pp.783-799
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    • 2015
  • In this study, effect of horizontal in situ stress on failure mechanism around underground openings excavated in isotropic, elastic rock zones is investigated. For estimating the plastic zone occurrence, an induced stress influence area approach (Bray Equations) was modified to define critical stress ratio according to the Mohr-Coulomb failure criterion. Results obtained from modified calculations were compared with results of some other analytical solutions for plastic zone thickness estimation and the numerical modelling (finite difference method software, FLAC2D) study. Plastic zone and its geometry around tunnels were analyzed for different in situ stress conditions. The modified equations gave similar results with those obtained from the other approaches. However, safer results were calculated using the modified equations for high in situ stress conditions and excessive ratio of horizontal to vertical in situ stresses. As the outcome of this study, the modified equations are suggested to use for estimating the plastic zone occurrence and its thickness around the tunnels with circular cross-section.

Korean Three Dimensional In-situ stresses and Tunnel Analysis Considering These Stresses (한반도 3차원 지중응력과 이를 고려한 터널해석에 대한 연구)

  • 김동갑;박종관;김수정
    • Proceedings of the Korean Geotechical Society Conference
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    • 2001.03a
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    • pp.97-104
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    • 2001
  • The magnitude and the orientation of in-situ stresses contribute to ground displacement and stresses in the field of underground space. This paper investigates in-situ stresses at various depth on the basis of 392 data which were determined by over-coring and hydro-fracturing test methods in the Korea peninsula. The result shows that in-situ stress distribution are more or less non-uniform through the Granite and Gneiss sub-area, and that the K-value in the Volcanic sub-area are below 1 at the deep depth. Also, the result of three dimensional numerical analyses of tunnel shows that the direction and magnitude of displacement around tunnel are much effected by the stress difference between the maximum and the minimum horizontal stress.

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Analysis of In-Situ Stress Regime from Hydraulic Fracturing Field Measurements in Korea (수압파쇄 현장시험을 통한 국내 지반의 초기응력 분포양상 해석)

  • Choi, Sung-Oong
    • Journal of Industrial Technology
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    • v.28 no.B
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    • pp.111-116
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    • 2008
  • Since the hydraulic fracturing field testing method was introduced first to Korean geotechnical engineers in 1994, there have been lots of progresses in a hardware system as well as an interpretation tool. The hydrofracturing system of first generation was the pipe-line type, and it has been developed to a wire-line system at their second generation. The current up-to-date system is more compact and is able to be operated by all-in-one system. With a progress in a hardware system, the software for analyzing in-situ stress regime has also been progressed. The shut-in pressure, which is the most ambiguous parameter to be obtained from hydrofracturing pressure curves, can now be acquired automatically from the various methods. While the hardware and software for hydrofracturing tests are being developed during the last decade, the author could accumulate the field test results which can cover the almost whole area of South Korea. Currently these field data are used widely in a feasibility study or a preliminary design step for tunnel construction in Korea. Regarding the difficulties in a site selection and a test performance for the in-situ stress measurement at an off-shore area, the in-situ stress regime obtained from the field experiences in the land area can be used indirectly for the design of a sub-sea tunnel. From the hydrofracturing stress measurements, the trend of magnitude and direction of in-situ stress field was shown identically with the geological information in Korea.

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Three Dimensional In-situ Stress Distribution in the Southern Korean Peninsula and Its Application in Tunnel Analysis (한반도 3차원 지중응력의 분포와 이를 고려한 터널해석에 대한 연구)

  • 김동갑;박종관
    • Journal of the Korean Geotechnical Society
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    • v.18 no.2
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    • pp.65-74
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    • 2002
  • The measurement of in-situ stress is essential to estimate the ground displacement and the stress distribution of a tunnel and an underground structure. In this study, the in-situ stress distribution of the Southern Korean peninsula was re-evaluated by the new 380 in-situ data which were determined by overcoring and hydrofracturing methods, and the three-din erosional numerical analysis of tunnelling was performed. The results of in-situ stress distribution show that the distribution of horizontal stress tends to be more irregular in metamorphosed(gneiss) and granite areas than in sedimentary and volcanic areas. The ratio of horizontal to vertical stresses(K-value) in volcanic area is less than 1 below the depth of 150m. The direction and magnitude of three dimensional in-situ stresses were shown simultaneously in a figure for the first time in Korea. The three-dimensional numerical analysis of tunnelling indicates that the orientation and magnitude of displacement around a tunnel are controlled mainly by the difference between the maximum and minimum horizontal stresses.

Regional Distribution Pattern and Geo-historical Transition of In-situ Stress Fields in the Korean Peninsula (한반도지역의 현지응력장 분포 패턴 및 지질시대별 전이 추이)

  • Synn, Joong-Ho;Park, Chan;Lee, Byung-Joo
    • Tunnel and Underground Space
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    • v.23 no.6
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    • pp.457-469
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    • 2013
  • We have analyzed the regional in-situ stress pattern using 460 stress measurement data at about 100 test sites in Korea, and suggested correlation equations of stress-depth and stress ratio-depth. We made Korea Stress Map(KSM) as in-situ stress fields of the Korean peninsula, combining with a paleo-stress analysis according to the geological period and a stress estimation from focal mechanism. We confirmed the reliability and applicability of correlation equations derived in this study, comparing with worldwide stress-depth patterns, and also estimated the pattern of in-situ stress fields of north-eastern Asia including Korea, China and Japan, comparing with World Stress Map.

A study on analysis of tunnel behaviors considering the characteristics of in-situ stress distribution in rock mass (암반응력의 분포특성을 고려한 터널거동 분석에 관한 연구)

  • Part, Do-Hyun;Kim, Young-Geun
    • Journal of Korean Tunnelling and Underground Space Association
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    • v.9 no.3
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    • pp.275-286
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    • 2007
  • In construction of a structure in underground space, in-situ stress in rock mass has great effect on the stability of the structure. Especially, the direction and magnitude of rock stress have influence on the excavation method, the choice of support and reinforcement method for establishing the stability of tunnel. Therefore, it is very important to consider the characteristics of in-situ stress in rock mass for tunnel stability analysis. In this study, a reasonable design method for underground structure was reviewed through the case study for tunnel design considering in-situ rock stress. For this purpose, the estimation for SRF (Stress Reduction Factor) as input parameter in rock classification using Q-System and the assesment for tunnel support were studied. Also, considering the characteristics of in-situ rock stress such as the magnitude of K and the direction of principal stress, the parameter studies for tunnel stability analysis were carried out. An improved method was proposed for obtaining the better results in the tunnel stability analysis.

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The Effect of Deposition Rate on In-Situ Intrinsic Stress Behavior in Cu and Ag Thin Films (증착 속도 변화에 따른 구리와 은 박막의 실시간 고유응력 거동)

  • Ryu, Sang;Lee, Kyungchun;Ki, Youngman
    • Korean Journal of Metals and Materials
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    • v.46 no.5
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    • pp.283-288
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    • 2008
  • We observed the in-situ stress behavior of Cu and Ag thin films during deposition using a thermal evaporation method. Multi-beam curvature measurement system was used to monitor the evolution of in-situ stress in Cu and Ag thin films on 100 Si(100) substrates. The measured curvature was converted to film stress using Stoney formula. To investigate the effects of the deposition rates on the stress evolution in Cu and Ag thin films, Cu and Ag films were deposited at rates ranging from 0.1 to $3.0{\AA}/s$ for Cu and from 0.5 to $4.0{\AA}/s$ for Ag. Both Cu and Ag films showed a unique three stress stages, such as 'initial compressive', 'a tensile maximum' and followed by 'incremental compressive' stress. For both Cu and Ag films, there is no remarkable effect of deposition rate on the thickness and average stress at the tensile maximum. There is, however, a definite decrease in the incremental compressive stress with increasing deposition rate.

The Effect of Substrate Surface Roughness on In-Situ Intrinsic Stress Behavior in Cu Thin Films (기판 표면 조도에 따른 구리박막의 실시간 고유응력 거동)

  • Cho, Moohyun;Hwang, Seulgi;Ryu, Sang;Kim, Youngman
    • Korean Journal of Metals and Materials
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    • v.47 no.8
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    • pp.466-473
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    • 2009
  • Our group previously observed the intrinsic stress evolution of Cu thin films during deposition by changing the deposition rate. Intrinsic stress of Cu thin films, which show Volmer-Weber growth, is reported to display three unique stress stages, initial compressive, broad tensile, and incremental compressive stress. The mechanisms of the initial compressive stress and incremental compressive stages remain subjects of debate, despite intensive research inquiries. The tensile stress stage may be related to volume contraction through grain growth and coalescence to reduce over-accumulate Cu adatoms on the film surface. The in-situ intrinsic stresses behavior in Cu thin films was investigated in the present study using a multi-beam curvature measurement system attached to a thermal evaporation device. The effect of substrate surface roughness was monitored by observed the in-situ intrinsic stress behavior in Cu thin films during deposition, using $100{\mu}m$ thick Si(111) wafer substrates with three different levels of surface roughness.