• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.533-538
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• 2001

The ZnSe sample grown by chemical bath deposition (CBD) method were annealed in Ar gas at 450$^{\circ}C$ Using extrapolation method of X-ray diffraction pattern, it was found to have zinc blend structure whose lattice parameter a$\_$o/ was 5.6687 ${\AA}$. From Hall effect, the mobility was likely to be decreased by impurity scattering at temperature range from 10 K to 150 K and by lattice scattering at temperature range from 150 K to 29 3K. The band gap given by the transmission edge changed from 2.7005 eV at 293 K to 2.8739 eV at 10 K. Comparing photocurrent peak position with transmission edge, we could find that photocurrent peaks due to excition electrons from valence band, $\Gamma$$\_$8/ and $\Gamma$$\_$7/ to conduction band $\Gamma$$\_$6/ were observed at photocurrent spectrum. From the photocurrent spectra by illumination of polarized light on the ZnSe thin film, we have found that values of spin orbit coupling splitting Δso is 0.0981 eV. From the PL spectra at 10 K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0612 eV and the dissipation energy of the donor -bound exciton and acceptor-bound exciton to be 0.0172 eV, 0.0310 eV, respectively.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.11
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• pp.1294-1303
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• 1988

Electron and hole traps in semi-insulating GaAs with activation energies ({\Delta}E_r) ranging from 0.16 $\pm$ 0.01 to 0.98 $\pm$ 0.01 eV, have been detected and characterized by photo-induced current transient measurements. SI undoped GaAs has fewer deep levels than SI GaAs: Cr. The thermal capture cross section and density of the traps have been estimated and some of the centers have been related to native defects. In particular, the activation energy of the compensating Cr, and "0" levels in semi-insulating GaAs were accurately measured. The transient measurements were complemented by Hall measurements at T > 300K and photocurrent spectra measurements. The transition energies for the deep compensating levels obtained by the analyses of data from these measurements, when compared with those from the transient measurements, indicate negligible lattice-coupling of these centers. Analysis of the transport data also indicates that neutral impurity scattering plays a significant role in semi-insulating materials at high temperatures.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.254-254
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• 2011

현재 AMLCD(Active Matrix Liquid Crystal Display)는 노트북, 컴퓨터, TV등 여러 영상매체에 있어 가장 많이 활용되고 있는 디스플레이로 손꼽힌다. AMLCD에 구동소자로 사용되는 a-Si:H TFT는 낮은 제조비용과 축적된 기술을 바탕으로 가장 많이 쓰이고 있다. 특히 a-Si이 가지는 소형화나 대형화의 편의성은 모바일 기기, projection TV, 광고용 패널 등 적용분야가 점점 넓어지고 있는 추세이다. 하지만 a-Si라는 물질 자체가 가지는 낮은 이동도는 더 많은 application을 위해 해결되어야 할 과제이다. 낮은 이동도는 a-Si 실리콘 원자간 결합의 불규칙성 및 무질서와 dangling bond에 의한 localize state(deep trap, band tail)의 존재 때문에 발생하며 결과적으로 TFT 소자의 특성의 저하를 가져온다. 앞선 연구에서는 carrier이동도의 개선을 위해서 첫 번째로 insulator층과 active층 사이의 계면 상태를 향상시키기 위해 insulator로 쓰이는 a-SiN층 표면에 0~18 sccm의 유량으로 phosphorus를 주입하였다. AFM분석을 해본 결과 phosphorus를 주입함으로써 계면의 roughness가 줄어드는 것을 확인 할 수 있었다. 이러한 계면의 roughness 감소는 표면 산란(surface scattering)및 전자 포획(trap)의 영향을 줄임으로써 이동도의 향상을 가져왔다. 두 번째로 active층으로 쓰이는 a-Si:H 층의 표면에 phosphorus를 0?9sccm의 유량으로 doping하였다. 이로 인해 channel이 형성되는 active 영역에 직접적으로 불순물을 doping됨으로써 전도도를 증가되어 이동도를 향상시켰다. 하지만 지나친 doping은 불순물 산란(impurity scattering)의 증가로 인해 이동도를 저하시키는 결과를 보여 주었다. 본 연구에서는 TFT의 이동도 향상을 위해 두 가지의 technology를 함께 적용시켜 a-SiN/a-Si:H 계면 각각에 phosphorus를 주입 및 doping을 하였다. 모든 박막은 PECVD로 제작하였으며 각 박막의 두께는 a-SiN/a-SiN(phosphorus)/a-Si:H(doped)/a-Si:H/n+ a-Si($2350{\AA}/150{\AA}/150{\AA}/1850{\AA}/150{\AA}$)으로 고정하고 유량을 변화시키면서 특성을 관찰하였다.

• Journal of Magnetics
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• v.12 no.3
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• pp.118-123
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• 2007

We have studied the effect of Au-Cu back layer system ${\sim}10{\AA}$ thick on the properties of a spin valve. The back layers were Cu, Au, co-sputtered $Cu_xAu_{1-x}$, laminated $[Au/Cu]_n$. and bi-layer [Au/Cu]. When Au was added to the Cu, the resistance of the spin valve abruptly increased most likely due to impurity scattering. The GMR values were not increased significantly for all the structures. In the case of co-sputtered $Cu_xAu_{1-x}$, the changes in the resistance, ${\Delta}R$, was increased at a composition of ${\sim}Au_{0.5}Cu_{0.5}$. This increase in ${\Delta}R$ is due to increase in the resistance and not from the enhanced spin-dependent scattering. The structural analyses showed that the orthorhombic $Au_{0.5}Cu_{0.5}$ was formed in the back layer instead of the face-centered tetragonal $Au_{0.5}Cu_{0.5}$ as we expected. Thermal annealing over $400^{\circ}C$ may be required to have face-centered tetragonal in the $10{\AA}$ thick ultra-thin film. In the case of a laminated or bi-layered back layer, the properties of the spin valve were improved, which may be attributed to the increase in the mean free path of conduction electrons.

• Journal of Electrochemical Science and Technology
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• v.2 no.2
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• pp.103-109
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• 2011

Nanocrystalline $LiFePO_4$ powders were prepared at 660-$670^{\circ}C$ in an Ar atmosphere using two different synthetic routes, solid-state and sol-gel. Both materials showed well-developed XRD patterns without any impurity peaks. Particles composed in the range of 200-300 nm from the solid-state method, and 50-100 nm from the sol-gel method, were confirmed through scanning electron microscopy and dynamic light scattering. The $LiFePO_4$ obtained by the sol-gel method offered a high discharge capacity (153 mAh/g) and stable discharge behavior, even at elevated temperatures (50 and $60^{\circ}C$), whereas poor electrochemical performance was observed from the solid-state method. Rate capability studies for sol gel-derived $LiFePO_4$ ranged from 0.2 to 30 C, which revealed excellent retention over 70 cycles with a 99.9% capacity.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.561-561
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• 2012

Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as fast electron mobility, high thermal conductivity and optical transparency, and also found many applications such as field-effect transistors (FET), energy storage and conversion, optoelectronic device, electromechanical resonators and chemical sensors. Several techniques have been developed to form the graphene. Especially chemical vapor deposition (CVD) is a promising process for the large area graphene. For the electrically isolated devices, the graphene should be transfer to insulated substrate from Cu or Ni. However, transferred graphene has serious drawback due to remaining polymeric residue during transfer process which induces the poor device characteristics by impurity scattering and it interrupts the surface functionalization for the sensor application. In this study, we demonstrate the characteristics of solution-gated FET depending on the removal of polymeric residues. The solution-gated FET is operated by the modulation of the channel conductance by applying a gate potential from a reference electrode via the electrolyte, and it can be used as a chemical sensor. The removal process was achieved by several solvents during the transfer of CVD graphene from a copper foil to a substrate and additional annealing process with H2/Ar environments was carried out. We compare the properties of graphene by Raman spectroscopy, atomic force microscopy(AFM), and X-ray Photoelectron Spectroscopy (XPS) measurements. Effects of residual polymeric materials on the device performance of graphene FET will be discussed in detail.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.344-348
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• 2004

The CdSe thin films wee grown on the Si(100) wafers by a hot wall epitaxy method(HWE). The source and substrate temperature are $600^{\circ}C\;and\;430^{\circ}C$ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the timperature range 30K to 150K by impurity scatering and decreased in the temperature range 150K to 293K by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of $1.39{\times}10^7$, the MAPD of 335mV, and the rise and decay time of 10ms and 9.5ms, respectively

• Journal of Powder Materials
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• v.28 no.1
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• pp.25-30
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• 2021

The surface of silicon dummy wafers is contaminated with metallic impurities owing to the reaction with and adhesion of chemicals during the oxidation process. These metallic impurities negatively affect the device performance, reliability, and yield. To solve this problem, a wafer-cleaning process that removes metallic impurities is essential. RCA (Radio Corporation of America) cleaning is commonly used, but there are problems such as increased surface roughness and formation of metal hydroxides. Herein, we attempt to use a chelating agent (EDTA) to reduce the surface roughness, improve the stability of cleaning solutions, and prevent the re-adsorption of impurities. The bonding between the cleaning solution and metal powder is analyzed by referring to the Pourbaix diagram. The changes in the ionic conductivity, H2O2 decomposition behavior, and degree of dissolution are checked with a conductivity meter, and the changes in the absorbance and particle size before and after the reaction are confirmed by ultraviolet-visible spectroscopy (UV-vis) and dynamic light scattering (DLS) analyses. Thus, the addition of a chelating agent prevents the decomposition of H2O2 and improves the life of the silicon wafer cleaning solution, allowing it to react smoothly with metallic impurities.

• Korean Journal of Optics and Photonics
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• v.13 no.5
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• pp.455-459
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• 2002

The transport and optical properties of $In_2O_3$:Zn(IZO) thin films grown by DC magnetron sputtering deposition have been studied. The deposition temperatures ($T_s$) were varied from room temperature to $400^{\circ}C$ in $50^{\circ}C$ steps. The IZO films are an amorphous phase for $T_s$<$300^{\circ}C$ and polycrystalline phase for $350^{\circ}C$＜$T_s$. In contrast to ordinary films, amorphous IZO films have lower resistivity and higher optical transmittance than polycrystalline IZO films. The resistivity of amorphous IZO was in the range of 0.29~0.4 m$\Omega$cm and that of polycrystalline IZO was in the range of 1~4 m$\Omega$cm. The carrier type for IZO film was found to be n-type, and the carrier density, was $3~5{\times}10^{20}/cm^3$. The Hall mobility, $({\mu}_H)$, was 20~$50\textrm{cm}^2$/V.sec. The predominant scattering mechanisms in both amorphous and polycrystalline IZO films were believed to be ionized impurity scattering and lattice scattering. The visible transmittance of the IZO films, which decreases with an increase of TS, was above 80%.

• Journal of Sensor Science and Technology
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• v.10 no.1
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• pp.62-70
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• 2001

The ZnSe sample grown by chemical bath deposition (CBD) method were annealed in Ar gas at $45^{\circ}C$. Using extrapolation method of X-ray diffraction pattern, it was found to have zinc blend structure whose lattice parameter $a_o$ was $5.6687\;{\AA}$. From Hall effect, the mobility was likely to be decreased by impurity scattering at temperature range from 10 K to 150 K and by lattice scattering at temperature range from 150 K to 293 K. The band gap given by the transmission edge changed from $2.700{\underline{5}}\;eV$ at 293 K to $2.873{\underline{9}}\;eV$ at 10 K. Comparing photocurrent peak position with transmission edge, we could find that photocurrent peaks due to excition electrons from valence band, ${\Gamma}_8$ and ${\Gamma}_7$ and to conduction band ${\Gamma}_6$ were observed at photocurrent spectrum. From the photocurrent spectra by illumination of polarized light on the ZnSe thin film, we have found that values of spin orbit coupling splitting ${\Delta}so$ is $0.098{\underline{1}}\;eV$. From the PL spectra at 10K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be $0.061{\underline{2}}\;eV$ and the dissipation energy of the donor -bound exciton and acceptor-bound exciton to be $0.017{\underline{2}}\;eV$, $0.031{\underline{0}}\;eV$, respectively.