• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.8
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• pp.658-663
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• 2002

Hall factor of electrons in $\Gamma$-valley is calculated as functions of temperature, impurity concentration, and nonparabolicity of conduction valleys by taking into account the current density obtained from the Boltzmann transport equation. The dependence of the Hall factor on the temperature is clearly shown in the case of the optical phonon scattering and that on the impurity concentration is obvious in the case of the ionized impurity scattering. As the nonparabolicity of the conduction band increases, the Hall factor due to the acoustic or optic phonon scattering increases, whereas that due to the ionized impurity scattering decreases. The change of the Hall factor can be analysed in terms of the dispersion of relaxation time.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.4 s.334
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• pp.1-8
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• 2005

The increased effective impurity due to the pocket ion implantation is well blown to give rise to a reduction of the effective mobility of halo MOSFETs. However, further decrease of the effective mobility can be observed in pocket implanted MOSFETs above the mobility reduction due to the Coulomb impurity scattering and the gate bias dependency of the effective mobility can also differ from the simple model describing the mobility behavior in terms of the effective impurity. Phonon scattering and surface scattering as well as impurity Coulomb scattering are also shown to be effective in the degradation of the carrier mobility of pocket implanted MOSFETs. Using the 1-D regional approximation the effect of the distribution of the inversion charge density along the channel on the drain current is investigated. The inhomogeneous channel charge distribution due to pocket implantation is also shown to contribute to the further reduction of the effective mobility in halo MOSFETs.

• Electrical & Electronic Materials
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• v.6 no.5
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• pp.417-427
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• 1993

액체질소하에서의 물리적인 현상 및 실험결과를 통하여 캐리어 냉동현상, 좁은 폭 및 숏트 채널효과를 포함한 문턱전압 모델, Surface Roughness Scattering 및 Ioniaed Impurity Scattering을 포함한 이동도 모델과 적합한 기판 전류모델이 제안되었으며 이 모델들은 모의실험 프로그램인 BSIM과 SPICE에 이식되었다. 제작된 링 오실레이터와 리플 가산기에 적용한 결과 측정한 데이타와 잘 부합되었다.

• Progress in Superconductivity
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• v.12 no.1
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• pp.36-40
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• 2010

We have studied the anisotropy of the London penetration depth of carbon doped $MgB_2$ single crystals, which was obtained from reversible magnetization measurements with the magnetic field both parallel and perpendicular to the c-axis. Similar to the pure $MgB_2$, the anisotropy of the upper critical field ${\gamma}_H$ decrease with temperature while the anisotropy of the London penetration depth ${\gamma}_{\lambda}$ slowly increases with temperature. However, the temperature dependence of ${\gamma}_H$ is drastically reduced and the value of ${\gamma}_{\lambda}$ becomes nearly ~1 as C is introduced. These results indicate that C substitution increases impurity scattering mainly in the $\sigma$ bands. The temperature dependence of the anisotropies agree well with the theoretical predictions with impurity scattering.

• 한국초전도학회:학술대회논문집
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• 2008.08a
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• pp.41-41
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• 2008

• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.4
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• pp.336-339
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• 2004

In this paper the two-dimensional scattering rates were calculated in pseudomorphic Al/sub x//Ga/sub 1-x//As/Ga/sub y/In/sub l -y//As/GaAs heterostructure systems. The electronic states of the square quantum well were determined by the numerical self-consistent solution of Poisson's and Schrodinger's equations. The numerically obtained wave functions and energy levels were used to obtain the major two-dimensional scattering rates in this structure. Polar optical- and acoustic-phonon scattering, piezoelectric, ionized impurity and alloy scattering were considered for the first two sub-bands. The results were compared to the three-dimensional scattering rates also calculated in the same region.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.3
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• pp.63-71
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• 1990

The hydrodynamic model parameters for the submicron GaAs simulation are calculated using the Monte Carlo method. $\Gamma$, L-, and X-valleys are included in the conduction band of GaAs, and polar optic phonon, acoustic phonon, equivalent intervalley, non-equivalent intervalley, ionized impurity, and piezoelectric scattering are taken into account. The velocity-electric field strength curve obtained in this paper is in good agreement with experimental one. We present the results in tabular form so that other participants can make use of them to simulate the submicron GaAs devices by the hydrodynamic model.

• The Journal of Natural Sciences
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• v.11 no.1
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• pp.23-26
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• 1999

Phase separation temperature of lysozyme-water mixture increased with X-ray exposure on lysozyme and decreased with impurity of saponin. The intensity of light scattering in lysozyme-water mixture with X-ray exposure on lysozyme decreased as a function as a function of temperature, and decreased with impurity of saponin.

• Korean Journal of Crystallography
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• v.9 no.2
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• pp.159-167
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• 1998

천연에서 발견되는 유색수정은 자수정, 연수정, 황수정, 청수정, 녹수정, 장미수정 등 그 색의 종류에 따라 크게 6가지로 분류되며 발색 기구에 따라 색중심(color center), 전이금속 불순물(transition metal impurity), 산란(scattering), 전하이동(charge transfer) 등 4가지로 분류된다. 이들은 천연에서 고온고압의 열수가 냉각되면서 그 안아 녹아있던 광물질이 재결정하여 생성된 것이다. 이러한 유색수정은 실험실에서도 합성되며 그 방법은 천연 수정의 생성 과정과 유사하다. 그러나 천연수정 중의 일부는 실험실에서 성장하기가 거의 불가능하기 때문에 다른 방법을 이용하여 유사한 색을 가지게 한다. 본 논문에서는 불순물 원소의 종류 및 수정 격자내의 위치, 최외각 전자의 상태에 따라 색이 달라지는 것을 고찰하고 이러한 유색수정을 합성하는 원리에 대하여 논하고자 한다.

• Journal of Magnetics
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• v.4 no.4
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• pp.111-114
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• 1999

Numerical calculation for temperature dependence of galvanomagnetic properties of thin bismuth films is pursued. The quasi-two dimensional system is treated in the perturbation formalism of previous study, where realistic screened potential due to impurity is assumed to be the only scattering channel. The potential is separated into pure two dimensional part and the remaining presumed perturbation part. Relaxation time and mobilities for both electron and hole are evaluated, then temperature dependence of the Hall coefficient and magnetoresistance is obtained. The broad minimum of magnetoresistnace is manifested, and the interpretation under the kinetic theory is made. Thickness dependence of the quantities are also shown, which are in good agreement with the expected quantum size effect.