• 한국산업융합학회 논문집
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• 제24권6_2호
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• pp.909-917
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• 2021

This study was carried out experimentally on the production and properties of silicon nanopowders characteristics using a transferred type arc plasma apparatus. To investigate the properties of silicon nanopowder, the purity of argon gas(99.999%, 99.9%) and the partial pressure ratio of nitrogen gas(0~90%) were varied. The total pressure in chamber is 400Torr and the silicon chunk amount used as raw material is 300g. The power supplied to the cathode to generate arc plasma was 9~12kW/h, and the electrode was made of tungsten and graphite with a diameter of 13mm. The particle size, impurity elements and powder evaporation rate of the silicon powder were analyzed using the XRD, FE-SEM, TEM and electronic scale. According to the purity of argon gas, the silicon evaporation rate and the particle size were similar, and impurities were generated more in the case of 99.9% purity than 99.999%. When argon gas and nitrogen gas were mixed in the chamber, the silicon evaporation rate and particle size increased as the partial pressure ratio of nitrogen gas increased. In particular, when the partial pressure ratio of nitrogen gas was 80%, the silicon evaporation rate 80g/h, and the particle size was about 80~100nm.

• 한국결정성장학회지
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• 제13권1호
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• pp.5-14
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• 2003

Principles of a novel pulse growing method are described. The method realized in the crystal growing on a seed from melts under raw melt feeding provided a more reliable control of the crystallization process when producing large alkali halide crystals. The slow natural convection of the melt in the crucible at a constant melt level is intensified by rotating the crucible, while the crystal rotation favors a more symmetrical distribution of thermal stresses over the crystal cross-section. Optimum rotation parameters for the crucible and crystal have been determined. The spatial position oi the solid/liquid phase interface relatively to the melt surface, heaters and the crucible elements are considered. Basing on that consideration, a novel criterion is stated, that is, the immersion extent of the crystallization front (CF) convex toward the melt. When the crystal grows at a <> CF immersion, the raised CF may tear off from the melt partially or completely due to its weight. This results in avoid formation in the crystal. Experimental data on the radial crystal growth speed are discussed. This speed defines the formation of a gas phase layer at the crystal surface. The layer thickness il a function of time a temperature at specific values of pressure in the furnace and the free melt surface dimensions in the gap between the crystal and crucible wall. Analytical expressions have been derived for the impurity component mass transfer at the steady-state growth stage describing two independent processes, the impurity mass transfer along the <> path and its transit along the <> one. The heater (and thus the melt) temperature variation is inherent in any control system. It has been shown that when random temperature changes occur causing its lowering at a rate exceeding $0.5^{\circ}C/min$, a kind of the CF decoration by foreign impurities or by gas bubbles takes place. Short-term temperature changes at one heater or both result in local (i.e., at the front) redistribution of the preset axial growth speed.

• 한국정보통신학회논문지
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• 제18권6호
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• pp.1462-1468
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• 2014

30MeV 사이클로트론의 양성자가 Xe-124 기체 표적 시스템에 조사될 때 일어나는 핵반응을 적용하여 Xe 가스를 GPM으로부터 타겟으로 전송하는 시스템을 설계하였다. 시스템 설계는 크게 4파트로 구성되며 각각의 하드웨어 부분은 솔리드웍스 3-D 캐드를 이용하여 설계하였다. 타겟 시스템 중 헬륨으로 Havor foil을 냉각시키게 설계했고, 타겟 내 Xe 가스가 양성자로 조사 시 상승하는 타겟 온도를 냉각수로 냉각시켜주도록 설계하였다. 또한, 온도센서와 압력센서를 장착하여 타겟 내의 온도와 압력을 확인할 수 있도록 구성 하였다. GPM은 Xe 가스를 타겟으로 운반, 준비하는 부분이며 Xe 가스를 저장하는 부분과 불순물을 제거하는 부분으로 구성되어 있다. HCS는 헬륨을 이용하여 각 파트를 세척하고 냉각시켜 주는 부분이며, 각각의 장치들은 PLC로 제어하여 유지보수시의 편리성을 추구하였고 PC Vue 모니터링 프로그램을 사용하여 SIEMENS PLC와 인터페이스 하여 시스템을 보다 안전하고 편리하게 감시하도록 구성하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.66-69
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• 1997

The p-GaN fins doped with the impurity of Zn were grown on n-GaN films to prevent the defects from the lattice mismatch with sapphire substrates by HVPE. For growth of the high quality n-GaN, the optimized conditions were at first deduced from the results of various HCI gas flow rates and growth temperatures. On the basis of these conditions, p-GaN films were grown and investigated of the characteristics. The FWHM of the double crystal rocking curve of n-GaN was decreased and the hexagonal phases on the surface of GaN films were tend to be vivid with the inoement of HCI gas flow rates. Finally the n-type GaN films with FWHM of 648arcsec were obtained at 10cc/min of HCI gas. As the GaN films were grown with the above conditions, Zn was introduced in the form of vapor as a dopant for p-GaN films. But when Zn vaporized at 77$0^{\circ}C$ was doped to the films, the crystallites of Zn were distributed uniformly on the surface of the GaN film due to the over-doped.

• Korean Chemical Engineering Research
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• 제52권3호
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• pp.340-346
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• 2014

Continuous and dense ZIF-7 membranes were successfully synthesized on ${\alpha}-Al_2O_3$ porous substrate via two-step crystallization technique. ZIF-7 seeding layer was first deposited on porous ${\alpha}-Al_2O_3$ substrate by in-situ low temperature crystallization, and then ZIF-7 membrane layer can be grown through the secondary high-temperature crystallization. Two synthesis solutions with different concentration were used to prepare ZIF-7 seeding layer and membrane layer on porous ${\alpha}-Al_2O_3$ substrate, respectively. As a result, a continuous and defect-free ZIF-7 membrane layer can be prepared on porous ${\alpha}-Al_2O_3$ substrate, as confirmed by scanning electron microscope. XRD characterization shows that the resulting membrane layer is composed of pure ZIF-7 phase without any impurity. A single gas permeation test of $H_2$, $O_2$, $CH_4$ or $CO_2$ was conducted based on our prepared ZIF-7 membrane. The ZIF-7 membrane exhibited excellent H2 molecular sieving properties due to its suitable pore aperture and defect-free membrane layer.

• 한국전기전자재료학회논문지
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• 제17권6호
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• pp.580-585
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• 2004

Silicon dioxide (SiO$_2$) is widely used as a gate dielectric material for thin film transistors (TFT) and semiconductor devices. In this paper, SiO$_2$ films were grown by APCVD(Atmospheric Pressure chemical vapor deposition) at the high temperature. Experimental investigations were carried out as a function of $O_2$ gas flow ratios from 0 to 200 1pm. This article presents the SiO$_2$ gate dielectric studies in terms of deposition rate, refrative index, FT-IR, C-V for the gate dielectric layer of thin film transistor applications. We also study defect passivation technique for improvement interface or surface properties in thin films. Our passivation technique is Forming Gas Annealing treatment. FGA acts passivation of interface and surface impurity or defects in SiO$_2$ film. We used RTP system for FGA and gained results that reduced surface fixed charge and trap density of midgap value.

• 분석과학
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• 제19권1호
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• pp.1-8
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• 2006

$1000{\mu}g/g$ 염소 표준용액 중 미량 브롬 불순물 분석을 위해 동위원소희석 질량분석법을 이용하였다. 염소 표준용액 제조에는 비교적 불순물이 적은 KCl 염이 사용되었기 때문에 고농도의 염소 표준용액 중 미량 브롬 불순물 분석은 다량의 K와 Cl 매질로 인한 분광간섭 및 매질효과로 인해 측정이 어렵다. 따라서 브롬을 고농도의 공존원소로부터 분리하기 위해 AG2-X8의 음이온교환수지를 사용하였으며, 브롬 측정 시 ICP-MS의 RF power는 1500 W로 올리고 운반기체유량은 0.77 L/min로 내려서 $ArArH^+$분자이온에 의한 바탕값을 낮추었다. $1000{\mu}g/g$ 염소 표준용액 중 불순물 브롬을 표준물 첨가법으로 분석한 결과는 43.7 ng/g이며, 이온교환수지 처리과정의 재현성 문제로 인한 불확도를 줄이기 위해 동위원소희석법을 사용하여 측정한 결과는 41.2 ng/g(RSD 1.6%)로서 잘 일치하였다.

• 한국자기학회지
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• 제18권1호
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• pp.14-18
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• 2008

본 연구에서는 Bi:YIG($Bi_{0.5}Y_{2.5}Fe_5O_{12}$) 막을 에어로졸 성막법을 이용하여 제작함에 있어서, 에어로졸을 구성하는 수송가스의 유량이 막의 자기적 특성과 광학적인 특성에 대하여 분석하였다. 직경 $100{\sim}500$ nm 의 Bi:YIG 분말을 질소 가스를 수송가스로 사용하여 성막을 실시하였고, 이 때, 수송가스의 유량은 0.5 l/min${\sim}10$ l/min 사이에서 변화시켰다. 수송가스의 유량이 증가할수록 Bi:YIG 막의 보자력은 51 Oe에서 37 Oe까지 지수함수적으로 감소하였다. 이것은 충돌에너지가 증가함에 따라 막내부 혹은 막표면의 결함이 감소하였기 때문이라고 고찰되었다. 포화자화는 유량이 증가할수록 감소하였는데, 이는 충돌에너지가 강해짐에 따라 결정이 왜곡되는 힘을 받았기 때문이라고 고찰되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.39-39
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• 1999

The KSTAR (Korea Superconducting Tokamak Advanced Research) tokamak is a nuclear fusion experimental device for a long pulse/steady-state plasma operation, adopting fully superconducting magnets. In accordance with completion of the basic design of the torus vacuum vessel and the enclosing cryostat, the vacuum pumping and gas fueling basic design has been developed to fulfil the physics requirements. The ultra-high vacuum pumping and sophisticated gas fueling system of the machine is essential to achieve such roles for optimized plasma performance and operation. Recently the vacuum exhaust system using dedicated pumping ports for the vacuum vessel and cryostat has been modified to meet more reliable and successful performance of the KSTAR[Fig. 1].In order to achieve the required base pressure of 5 x 10-9 torr, the total impurity load to the vessel internal is limited to ~5 x 10-5 torr-1/x, while the cryostat base pressure is kept as ~5 x 105 torr to mitigate the thermal load applied to the superconducting magnets. Each KSTAR fueling system will be separately capable of fueling gas at a rate of 50 torr-1/x, consistent with the given pumping throughput. In order to initiate a plasma discharge in KSTAR, the vacuum vessel is filled to a gas pressure of few 10-6 to few 10-4 torr, and additional gas injection is required to maintain and increase the plasma density during the course of the discharge period.

• 전기화학회지
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• 제11권1호
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• pp.42-46
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• 2008

연료전지는 수소를 직접 사용하는 것이 가장 효율이 높지만 가정이나 사무실에서는 수소 저장탱크를 사용하기보다는 도시가스(메탄가스)를 연료 source로 하여 수소를 생산하는 것이 유리하다. 연료전지에 사용하는 수소는 천연가스나 바이오가스, 탄화수소계열의 연료를 개질하여 생산하며 개질반응과정에서 필연적으로 여러 성분의 불순물이 포함되어 있다. CO, $CO_2$, $H_2S$, $NH_3$, $CH_4$등의 불순물이 포함된 수소연료가 PEM fuel cell에 공급되면 연료전지 성능에 영향을 준다고 보고되어 있다. 이러한 영향에는 전극 촉매의 피독에 의한 kinetic losses, 전해질막과 촉매이온층의 양이온 전도성 감소에 의한 ohmic losses 그리고 촉매층의 구조나 소수성 감소에 의한 mass transport losses가 있다. 개질기에서 생산된 수소연료는 약 73%의 $H_2$와 20% 이하의 $CO_2$, 5.8% 이하의 $N_2$, 2% 이하의 $CH_4$, 10ppm 이하의 CO로 최종 공급된다. 본 연구에서는 연료 중에 $CO_2$가 고분자전해질 연료전지 anode측 성능에 미치는 영향을 조사하였다. 실험은 연료전지에 공급되는 연료중에 $CO_2$농도를 10%, 20%, 30%로 전류와 전압의 성능곡선과 장시간(10시간)실험 그리고 임피던스를 측정하였다. 또한 가스크로마토그래피를 이용하여 순수한 수소와 $CO_2$가 함유된 수소의 혼합을 통해 나온 연료전지 inlet에서의 불순물의 농도를 검증하였다.