• 공업화학
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• 제8권3호
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• pp.389-394
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• 1997

경각형 결정화에 의하여 벤젠-사이클로헥산 혼합물로부터 벤젠의 결정화에서 결정에 내포된 불순물(사이클로헥산)의 분포가 조사되었다. 결정의 순도에 미치는 결정성장속도의 영향을 파악하였으며 모든 실험결과는 Wintermantel 모델에 의해 도시될 수 있었다. 결정의 순도는 과냉각 정도가 클수록, 주입조성이 낮을 수록, 결정성장속도가 클 수록 낮았으며 결정성장속도는 불순물의 내포를 지배하는 가장 중요한 변수이다. 결정화 초기에 형성된 결정은 불순물을 많이 내포하고 있으며 결정의 두께가 증가함에 따라 불순물은 잔여용융액쪽으로 이동되어 배제됨을 알 수 있었다. 경막결정화에서 결정에 내포된 불순물은 일정두께의 결정층에 온도구배를 이용하여 결정을 부분용해시키면 불순물의 확산에 의하여 제거될 수 있음을 알 수 있었다.

• 한국응용과학기술학회지
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• 제29권4호
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• pp.594-598
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• 2012

고분자 전해질막 연료전지는 연료극의 연료와 공기극의 공기에 각각 $H_2S$와 $SO_2$이 포함되어 있을 때 그 성능이 심각하게 감소한다. 본 연구는 고분자전해질막 연료전지의 공기극과 연료극에 1 ppm에서 10 ppm의 불순물 가스를 공급하여 전기적 성능측정을 통해 복합적인 황불순물이 단위전지에 미치는 영향을 확인하였다. 최적의 운전조건에서 불순물가스를 피독하였을 때 $SO_2$와 $H_2S$의 농도가 증가할수록 성능이 급격히 감소하였다(단위전지 온도 $65^{\circ}C$, 상대습도 100%). 그리고 황의 흡착은 MEA의 백금 촉매층 표면서 일어나며, 불순물 가스가 MEA에 누적되는 것을 확인하였다. 1, 3, 5, 및 10 ppm 4회의 연속적인 피독 후 연료전지의 성능이 0.71 V에서 0.54 V(76 %)로 감소하였다.

• 한국전기전자재료학회논문지
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• 제21권12호
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• pp.1057-1062
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• 2008

The ${\alpha}-In_2S_3:Co^{2+}$ single crystal with a good quality and stabilized property were gained successfully by the CTR(Chemical Transport Reaction)method. XRD analysis showed that the grown single crystals were cubic structure. The optical absorption spectra of ${\alpha}-In_2S_3:Co^{2+}$ single crystal showed impurity absorption peaks due to cobalt impurity. These impurity absorption pesks were assigned to the ligand transition between the split energy levels of $Co^{2+}$ ions sited in $T_d$ symmetry of these semiconductor host lattice.

• 분석과학
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• 제15권1호
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• pp.87-90
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• 2002

The content of $SiHCl_3$ as a trace impurity in $SiCl_4$ was analyzed by Near IR spectrophotometer with optical fiber. The strong absorption bands of $5345{\sim}5116cm^{-1}$ and $4848{\sim}4349cm^{-1}$ were used for analysis of $SiHCl_3$, and the detection limit of impurity $SiCl_3$ was appeared to be 0.005 ％ in the spectrum. The quantitative analysis by Near IR spectrophotometry showed the analytical possibility of trace impurity in $SiCl_4$ without sample pre-treatment not only in the laboratory but also in the field.

• Progress in Superconductivity
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• 제6권1호
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• pp.37-40
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• 2004

We investigated the effects of impurity doping on the electrical transport and magnetic properties of TEX>$(Ru, Sn)(Sr, La)<_2$$EuCeCu_2$$O_{z}$ samples. We found that Sn substitution fur Ru causes a significant decrease of the volume fraction of ferromagnetic phase, as well as a decrease of the temperature where the ferromagnetic component is observed. La substitution for Sr leads to an increase of the magnetic ordering temperature with a moderate change of ferromagnetic component. The experimental results are discussed in conjunction with the structural data, transport properties and a possible change of oxygen content.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2011년도 춘계학술대회
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• pp.355-357
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• 2011

철강용융아연욕의 상부와 하부의 부유물들을 모으는 방법과 이들을 용융 환원에 의해 회수하는 방안에 관련된 여러 가지 연구 및 특허기술 자료로 발표되고 있으나, 이제까지 현장에 적용된 작업모델을 개발하지 못했다. 본 논문에서는 철강공정 인체유해 작업용 로봇이 영상에 기반한 부유물 인식을 위해 가장 효율적인 인식 알고리즘을 제안하였다.

• 전기의세계
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• 제20권2호
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• pp.9-14
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• 1971

N type single crystal CdTe is grown by doping Gallium as 0.01 percent, by using zone melting method. And also p type CdTe is grown by doping Ag, Sb, and Te as 0.01%. Resistivity and Concentration of the n.p type single crystal are measured. And then Li ions are implanted on the n type CdTe by high voltage accellerator with different amount of impurity. Indium is evaporated on the p type in high vacuum condition. These sample are heated so as to make P-N Junction in Argon gas flow. Electrical properties for solar cell are investigated. Photovoltage and current are found to be varyed according to following factor: 1) amount of impurity 2) diffusion thickness 3) temperature and time for making P-N junction. Efficiency of the P-N Junction evaporated Indium is 6.5 when it is heated at 380.deg. C for 15 minutie.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.156-156
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• 2008

Single crystal of $In_2S_3$ and $In_2S_3:Co^{2+}$ were grown successfully with a good quality by the CTR(Chemical Transport Reaction)method. XRD analysis showed that the grown In2S3 and $In_2S_3:Co^{2+}$ single crystals were cubic structure. The optical absorption spectra of $In_2S_3:Co^{2+}$ single crystal showed impurity absorption peaks due to cobalt impurity. These impurity absorption pesks were assigned to the ligand transition between the split energy levels of $Co^{2+}$ ions with $T_d$ symmetry of these semiconductor host lattice.

• 한국세라믹학회지
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• 제22권3호
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• pp.29-34
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• 1985

The IR spectra of he heavy metal fluoride glasses showed peaks at $1, 400cm^{-1}$ or $1, 100cm^{-1}$ due to metal oxyfluoride impurities. The intensity of this band and hence the oxide impurity content of the glass could be reduced considerably by the use of reactive atmosphere melting under $CCl_4$ In comparison with the fundamental IR absorption band of heavy metal oxides the oxide impurity bands observed in the heavy metal fluoride glasses are multiphonon bands due to a 2-phonon absorption process. The envelope of the a vs. v curve beyond thue fundamental region shows the exponential fall off of a with increasing v-typical of intrinsic multiphonon absorption. In the multiphonon region the amount of structure is intermediate between that observed for covalent solids and that for ionic solids.

• 대한전자공학회논문지
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• 제25권3호
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• pp.294-301
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• 1988

A study on the lattice damages and impurity depth profiles have been performed with BF2 ion implanted silicon materials. Electrical measurement, SIMS and TEM analysis techniques were used in order to identify the reverse annealing phenomena, impurity depth profiles and lattice damages. A typical reverse annealing phenomena were shown at the dose of 1x10**15/cm\ulcorner and non-reverse annealing at the dose of 5x10**15/cm\ulcorner This was explained with the formation of the amorphous region at BF2+ ion implantation with high dose. That is, the amorphous reigons were recrystallized centrated at certain regions were measured by SIMS technique. The dislocation loops-like crystalline defects were observed with TEM cross sections, which were formed at the lattice damaged region during annealing process.