• 제목/요약/키워드: impurity

검색결과 1,071건 처리시간 0.024초

A First-principles Study on Magnetic and Electronic Properties of Ni Impurity in bcc Fe

  • Rahman, Gul;Kim, In-Gee
    • Journal of Magnetics
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    • 제13권4호
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    • pp.124-127
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    • 2008
  • The magnetic and electronic properties of Ni impurity in bcc Fe ($Ni_1Fe_{26}$) are investigated using the full potential linearized augmented plane wave (FLAPW) method based the generalized gradient approximation (GGA). We found that the Ni impurity in bcc Fe increases both the lattice constant and the magnetic moment of bcc Fe. The calculated equilibrium lattice constant of $Ni_1Fe_{26}$ in the ferromagnetic state was 2.84 A, which is slightly larger than that of bcc Fe (2.83 ${\AA}$). The averaged magnetic moment per atom of $Ni_1Fe_{26}$ unit cell was calculated to be $2.24{\mu}_B$, which is greater than that of bcc Fe (2.17 ${\mu}_B$). The enhancement of magnetic moment of $Ni_1Fe_{26}$ is mainly contributed by the nearest neighbor Fe atom of Ni, i.e., Fe1, and this can be explained by the spin flip of Fe1 d states. The density of states shows that Ni impurity forms a virtual bound state (VBS), which is contributed by Ni $e_{g{\downarrow}}$ states. We suggest that the VBS caused by the Ni impurity is responsible for the spin flip of Fe1 d states.

경수로 구조재 내 불순물 조성 및 함량이 중성자 방사화 핵종 재고량에 미치는 영향 분석 (The Effects of Impurity Composition and Concentration in Reactor Structure Material on Neutron Activation Inventory in Pressurized Water Reactor)

  • 차길용;김순영;이재민;김용수
    • 방사성폐기물학회지
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    • 제14권2호
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    • pp.91-100
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    • 2016
  • 경수로 원전을 대상으로 원전 내 방사화 대상 물질인 스테인리스강, 탄소강 및 콘크리트의 불순물 정보 적용여부에 따른 방사화 핵종 재고량을 계산하였다. 본 연구에서 탄소강은 압력용기 물질에 사용되었고, 스테인리스강은 압력용기 내부 물질에 사용되었으며, 일반 콘크리트가 생체 차폐체에 사용되었다. 금속 물질에 대해서는 참고자료 1개의 불순물 함량 정보를 적용하였고, 콘크리트 물질에서는 참고자료 5개의 불순물 함량 정보를 적용하여 평가를 수행하였다. 방사화 핵종 재고량 전산해석 시 중성자속 계산에는 MCNP 전산코드를, 방사화 계산에는 FISPACT 전산코드를 각각 사용하였다. 계산 결과, 금속 물질에서 불순물을 포함한 경우가 그렇지 않은 경우보다 비방사능이 2배 이상 높았으며, 특히 콘크리트에서는 불순물을 포함한 경우가 그렇지 않은 경우보다 최대 30배 이상 비방사능이 높게 계산되었다. 방사화 핵종의 생성반응과 재고량을 분석한 결과, 금속 구조물에서는 불순물 중 Co원소와 중성자에 의해 생성되는 방사화 핵종인 Co-60이, 콘크리트에서는 불순물 중 Co, Eu 원소와 중성자에 의해 생성되는 방사화 핵종인Co-60, Eu-152, Eu-154 이 방사성폐기물 준위 결정에 큰 영향을 미치고 있음을 확인하였다. 본 연구의 결과는 원전 해체 계획 수립 시 방사화 핵종 재고량 평가 및 규제에 활용될 수 있을 뿐 아니라, 해체를 고려한 원전 또는 원자력시설의 설계 단계에서도 참고자료로 활용 될 것으로 판단된다.

재생골재의 도로적용을 위한 이물질 정량화 연구 (An Impurity Quantitative Study for Pavement Application in Recycled Waste Aggregates)

  • 박준영;조윤호;임남웅
    • 한국도로학회논문집
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    • 제7권1호
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    • pp.21-29
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    • 2005
  • 건설폐기물의 재활용방법 중 하나는 폐콘크리트 재생골재를 도로포장재료로 활용하는 것이다. 하지만 재생골재에 대한 많은 연구와 기술개발에도 불구하고 생산공정에 포함된 이물질 때문에 실제 도로포장재료로의 적용은 미비한 실정이다. 본 연구에서는 재생골재내에 포함된 이물질의 특성에 따라 무기이물질과 유기이물질로 구분하였으며 , 각 이물질이 포장 공용성에 미치는 영향을 제시하였다. 또한 재생골재내에 포함된 무기이물질 함유량과 압축강도와의 관계, 유기이물질 함유량과 수정 CBR과의 상관관계를 통하여 도로포장층인 린콘크리트 기층과 보조기층에 적용 가능한 이물질 함량기준을 제시하였다. 린콘크리트 기층에는 무기이물질 함유량 질량비 10% 이하, 입상재료 보조기층에는 유기이물질 함유량 부피비 2% 이하일 때 재생골재를 포장에 적용 가능한 것으로 나타났다.

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교류 플라즈마 표시기 방전 시 발생하는 불순물 종의 분석 (An analysis on the impurities generated by discharge in AC plasma display panel)

  • 김광남;김중균;양진호;황기웅;이석현
    • 한국진공학회지
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    • 제8권4A호
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    • pp.482-489
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    • 1999
  • AC PDP(P1asma Display Pane1)s use the mixture of inert gases to generate a discharge inside the display pixels. Impurities such as CO, $CO_2$ and OH inside discharge region may deteriorate the characteristics of PDP operation during long life time of PDP. Electro-negative gas such as CO can cause the sustain pulse amplitude to rise by attaching electrons which will play an important role in the earlier stage of the discharge. MgO film is used to protect the dielectric layer in AC PDP, and is in contact with the free space of display pixel where it is filled with the inert gas mixture. So, MgO film can be a main source of impurities. In this experiment, we observed the change of impurity generation of various MgO films which were deposited by different methods, by using QMS. (quadropole mass spectrometer) The main impurites were $H_2$, CO and $CO_2$. And with the comparison of the TPD (temperature programmed desorption) result, it can be understood that impurity gases are generated by sputtering of MgO surface not by outgassing. Deposition method had effects on the characteristics of the impurity generation. The MgO film manufactured by e-beam evaporation generated more amount of impurity gases than the MgO films manufactured by sputtering or ion-plating. And also heat treatment of MgO film after deposition decreased the magnitude of impurity gas generation.

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PAALD 방법을 이용한 TaN 박막의 구리확산방지막 특성 (Characteristics of TaN Film as to Cu Barrier by PAALD Method)

  • 부성은;정우철;배남진;권용범;박세종;이정희
    • 반도체디스플레이기술학회지
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    • 제2권2호
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    • pp.5-8
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    • 2003
  • In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and $SiO_2$ by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and NH$_3$ as precursors. The TaN films were deposited at $250^{\circ}C$ by both method. The growth rates of TaN films were 0.8${\AA}$/cycle for PAALD and 0.75${\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w -1.8:0.12 mm but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was 11g/cmand one for thermal ALD TaN was 8.3g/$cm^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200 nm)/TaN(10 nm)/$SiO_2$(85 nm)/ Si structure was shown at temperature above $700^{\circ}C$ by XRD, Cu etch pit analysis.

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수평 구조의 MOS-controlled Thyristor에서 채널에서의 길이 및 불순물 농도에 의한 스위칭 특성 (Switching Characteristics due to the Impurity Concentration and the Channel Length in Lateral MOS-controlled Thyristor)

  • 김남수;최지원;이기영;주병권;정태웅
    • 한국전기전자재료학회논문지
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    • 제18권1호
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    • pp.17-23
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    • 2005
  • The switching characteristics of MOS-Controlled Thyristor(MCT) is studied with variation of the channel length and impurity concentration in ON and OFF FET channel. The proposed MCT power device has the lateral structure and P-epitaxial layer in substrate. Two dimensional MEDICI simulator and PSPICE simulator are used to study the latch-up current and forward voltage-drop from the characteristics of I-V and the switching characteristics with variation of channel length and impurity concentration in P and N channel. The channel length and N impurity concentration of the proposed MCT power device show the strong affect on the transient characteristics of current and power. The N channel length affects only on the OFF characteristics of power and anode current, while the N doping concentration in P channel affects on the ON and OFF characteristics.

우리나라에서 불법 유통되는 메스암페타민의 불순물 프로화일 분석 (Impurity Profiling Analysis of Illicit Methamphetamine Seized in Korea)

  • 유영찬;정희선;김은미;김선춘;김승환
    • 약학회지
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    • 제42권6호
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    • pp.627-633
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    • 1998
  • Impurity profiling analysis of methamphetamine seized in Korea was investigated for the evidential and intelligent purpose. Samples were extracted with ethylacetate which contai ns internal standard of dioctylsebacate under basic condition and extracts were analyzed by GC-FID. Ephedrine, chloroephedrine & 1,2-dimethyl-3-phenylaziridine were identified impurities in illicit methamphetamine by GC-MS. These impurities revealed that most of abused methamphetamine in Korea were synthesized from ephedrine as a starting material. For the classification of samples. firstly, 24 impurity peaks were selected after inspection of every peak in 50 samples as the specific markers of impurities. Secondly, corresponding peak retention time and area ratio to the internal standard were calculated and database was created with values of 24 peaks by in-house program. Finally, cluster analysis was attempted with the resultant profiles using the STAR plot, which was based on the Euclidian distance for evaluating similarity among samples. A total of 76 samples were divided into 8 different groups within 90% statistical similarity and inter-batch samples showed similar impurity patterns by this procedure. In conclusion, the analysis of impurities is a suitable index for estimation the common or different origin of methamphetamine sample.

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제1원리 분자궤도계산법에 의한 $MnO_2$ 산화물 반도체의 전자상태에 미치는 불순물 첨가 효과의 계산 (Calculation on Effect of Impurity Addition on Electronic State of $MnO_2$ Oxide Semiconductor by First Principle Moleculat Orbital Method)

  • 이동윤;김봉서;송재성;김현식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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    • pp.99-102
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    • 2003
  • The electronic structure of ${\beta}-MnO_2$ having impurities in the site of Mn was theoretically investigated by $DV-X_{\alpha}$ (the discrete variation $X{\alpha}$) method, which is a sort of the first principle molecular orbital method using Hatre-Fock-Slater approximation. The used cluster model was $[Mn_{14}MO_{56}]^{-52}$ (M = transient metals). Madelung potential and spin polarization were considered for more exact calculations. As results of calculations, the energy levels of all electron included in the model were obtained. The energy band gap and positions of impurity levies were discussed in association with impurity 34 orbital that seriously affect electrical properties of $MnO_2$. It was shown that the energy band gap decreased with the increase of the atomic number of transient metal impurity.

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일반 3차원 표면전하법을 이용한 금속 이물질이 유입된 GIS 내부의 전계 해석 (Analysis of Electric Fields Inside GIS With Metal Impurity Using 3 Dimensional Surface Charge Method)

  • 김용준;민석원;김응식
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 E
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    • pp.2117-2119
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    • 1999
  • In this paper, the electric fields inside GIS with metal impurity is analysed by the use of 3 dimensional Surface Charge Method. We find the metal impurity makes electric field distribution inside GIS non-uniform and causes breakdown of $SF_6$ gas in GIS.

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Preparation and Impurity Control of the BaTiO3 Coatings by Micro Arc Oxidation Method

  • Ok, Myeong-Ryul;Kim, Ji Hye;Oh, Young-Joo;Hong, Kyung Tae
    • Corrosion Science and Technology
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    • 제5권4호
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    • pp.149-152
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    • 2006
  • $BaTiO_3$ coatings were prepared by micro arc oxidation (MAO) method. Only $Ba(OH)_2$ was dissolved in the electrolyte and process time was less than 30 min. Commercial purity $Ba(OH)_2$ (97%) containing $BaCO_3$ as impurity was used in preparing the electrolyte. XRD showed that the coating was composed of largely $BaTiO_3$, and in some process conditions, small quantity of impurity, $BaCO_3$, was characterized in the coating layer. The quantity of $BaCO_3$ could be controlled to negligible quantity by regulating the applied voltage and duration time of the MAO process.