• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.6 s.336
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• pp.23-30
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• 2005

In this paper, OPPS(oxidized porous poly-silicon) field emitters were fabricated by using various emitter-electrode metal and these electron emission characteristics were investigated for different thermal annealing effects. The addressed OPPS field emitter with Pt/Ti emitter electrode annealed at $300^{\circ}C$-1hr showed the efficiency of $2.98\%$ at $V_{ps}$=12 V and one annealed at $350^{\circ}C$-1hr showed the highest efficiency of $3.37\%$at $V_{ps}$=16V. They are resulted from the improvement of interfacial contact characteristics of thin emitter metal to an oxidized porous poly-silicon and the decrease of electrical resistance of emitter metal. The brightness of the OPPS field emitter increases linearly in $V_{ps}$ and after oxidation process for $900^{\circ}C$-50min, the brightness of the OPPS field emitter with the as-deposited Pt/Ti emitter electrode was 3600 cd/$m^2$ at the $V_{ps}$=15 V, 6260 cd/$m^2$ at the $V_{ps}$=20 V. Thermal treatment improved the adhesion between the Ti buffer layer and the oxidized porous poly-silicon and also played an important role in the uniform distribution of electric field to the emitter electrode.