• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.186-186
• /
• 2000

After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.

• Korean Journal of Materials Research
• /
• v.9 no.10
• /
• pp.1006-1011
• /
• 1999

B-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films were prepared by plasma-enhanced chemical-vapor deposition in a gas mixture of $SiH_4$, $CH_4$ and $B_2H_6$. Microstructures and chemical properties of a-SiC:H films grown with varing the volume ratio of $CH_4$ to $SiH_4$ were characterized with various analysis methods including scanning electron microscopy(SEM), X-ray diffractometry(XRD), Raman spectroscopy, Fourier-transform infrared (FTIR) spectroscopy. X-ray photoelectron spectroscopy(XPS), UV absorption spectroscopy and photoconductivity measurements. While Si:H films grown without $CH_4$ showed amorphous state, the addition of $CH_4$ during deposition enhanced the development of a microcrystalline phase. By introducing C atoms into the film, Si-Si and Si--$\textrm{H}_{n}$ bonds of a -Si:H films were gradually replaced by Si-C, C-C, and Si--$\textrm{C}_{n}\textrm{H}_{m}$ bonds. Consequently, the electrical resistivity and optical bandgap of a-SiC:H films were increased with the C concentration in the film.

• Journal of Sensor Science and Technology
• /
• v.2 no.1
• /
• pp.95-99
• /
• 1993

a-Si : H TFTs for image sensor have been fabricated and their operational characteristics have been investigated. Hydrogenated amorphous silicon nitride(a-SiN : H) films were used for the gate insulator and $n^{+}$-a-Si : H films were depostied for the source and drain contact. The thicknesses of a-SiN : H and a-Si : H films were $2000{\AA}$, respectively and the thickness of $n^{+}$-a-Si : H film was $500{\AA}$. Also the channel length and channel width of a-Si : H TFTs were $50{\mu}m$ and $1000{\mu}m$, respectively. The ON/OFF current ratio, threshold voltage, and field effect mobility of fabricated a-Si : H TFTs were $10^{5}$, 6.3 V, and $0.15cm^{2}/V{\cdot}s$, respectively.

• Korean Journal of Metals and Materials
• /
• v.48 no.2
• /
• pp.133-140
• /
• 2010

10 nm thick Ni layers were deposited on 200 nm $SiO_2/Si$ substrates using an e-beam evaporator. Then, 60 nm or 20 nm thick ${\alpha}$-Si:H layers were grown at low temperature (<$200^{\circ}C$) by a Catalytic-CVD. NiSi layers were already formed instantaneously during Cat-CVD process regardless of the thickness of the $\alpha$-Si. The resulting changes in sheet resistance, microstructure, phase, chemical composition, and surface roughness with the additional rapid thermal annealing up to $500^{\circ}C$ were examined using a four point probe, HRXRD, FE-SEM, TEM, AES, and SPM, respectively. The sheet resistance of the NiSi layer was 12${\Omega}$/□ regardless of the thickness of the ${\alpha}$-Si and kept stable even after the additional annealing process. The thickness of the NiSi layer was 30 nm with excellent uniformity and the surface roughness was maintained under 2 nm after the annealing. Accordingly, our result implies that the low temperature Cat-CVD process with proposed films stack sequence may have more advantages than the conventional CVD process for nano scale NiSi applications.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.38 no.2
• /
• pp.114-121
• /
• 2001

A circuit model for active-controlled field emitter array(ACFEA) as an electron source of active-controlled field emission display(ACFED) has been proposed. The ACFEA with hydrogenated amorphous silicon thin-film transistor(a-Si:H TFT) and Spindt-type molibdenum tips (Spindt-Mo FEA) has been fabricated monolithically on the same glass. A-Si:H TFT is used as a control device of field emitters, resulting in stabilizing emission current and lowering driving voltage. The basic model parameters extracted from the electrical characteristics of the fabricated a-Si:H TFT and Spindt-Mo FEA were implemented into the ACFEA model with a circuit simulator SPICE. The accuracy of the equivalent circuit model was verified by comparing the simulated results with the measured one through DC analysis of the ACFEA. The transient analysis of the ACFEA showed that the gate capacitance of FEA along with the drivability of TFT strongly affected the response time. With the fabricated ACFEA, we obtained a response time of 15$mutextrm{s}$, which was enough to make 4bit/color gray scale with the pulse width modulation (PWM).