• Elastomers and Composites
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• 제34권2호
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• pp.177-182
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• 1999

SBS thermoplastic elastomers offer an inexpensive alternative to vulcanised rubbers for many undemanding applications. They are, however, particularly susceptible to attack from atmospheric ozone leading to cracking as soon as any strain is applied. In most rubber applications some strain is unavoidable. In this paper a compounding approach to protecting SBS thermoplastic rubbers against ozone is described. An explanation is offered for why a protective effect Is observed only when certain combinations of additive are used. SBS elastomers are the most affordable class of thermoplastic rubbers. To achieve finished products resistant to ozone and without compromising the light colours often demanded, recourse must be made to blending with other saturated elastomers or replacement by hydrogenated (SEBS) types. The latter is a significantly more expensive alternative. Under laboratory conditions where the rate of ozone attack is increased by several decades, unprotected SBS begins to crack within a few hours. Several different protective agents are examined here, the best of which, a cyclic enol ether, $Vulkazon^{(R)}$ AFD, can extend the resistance to any cracking to several weeks by the use of a few percent by weight of additive. The systems reported neither discolour the polymer nor stain other materials with which it may be in contact. Use of the protective systems described here could enable SBS elastomers to compete in many applications with the more expensive SEBS polymers.

• 대한전자공학회논문지
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• 제23권2호
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• pp.236-242
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• 1986

The dependence of the current-voltage characteristics of hydrogenated amorphous silicon pin solar cells on the illumimination light intensity has been investigated. The open circuit voltage increases linearly with increasing the logarithm of light intensity up to AM 1, and nearly saturates above AM 1, indicating the open circuit voltage approaching the built-in potential of the pin solar cell above AM 1. The short circuit current density increase with light intensity in proportion to I**0.85 before and I**0.97 after light exposure. Since the series resistance devreses and shunt resistance increases with light intensily, the fill factor increases with light illumination. To increase the fill factor at high illumination in large area solar cells, t6he grid pattern on the ITO substrates should be made. Long light exposure on the solar cells gives rise to the increase of bulk resistance and defect states, resulting in the decrease of the fil factor and short circuit current density. The potential drop in the bulk of the a-Si:H pin solar cells at short circuit condition increases with decreasing temperature, and increases after long light exposure.

• Archives of Metallurgy and Materials
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• 제65권4호
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• pp.1357-1360
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• 2020

The low adherence of diamond-like carbon (DLC) films on titanium (Ti) alloys can be improved by using interlayer coatings. In this study, DLC (a-C:H) films were deposited using radio-frequency plasma-enhanced chemical vapor deposition (rf-PECVD), and a TiCN interlayer was applied between the extra low interstitial (ELI) grade of Ti-6Al-4V alloy and a-C:H film. The characteristics of the a-C:H-coated Ti-6Al-4V ELI alloy were investigated using field emission scanning electron microscopy, Vickers hardness, and scratch and wear tests. The DLC (a-C:H) films deposited by rf-PECVD had a thickness of 1.7 ㎛, and the TiCN interlayer had a thickness of 1.1 ㎛. Vickers hardness of the DLC (a-C:H) films were increased as a result of the influence of the TiCN interlayer. The resulting friction coefficient of the a-C:H-coated Ti-6Al-4V with the TiCN interlayer had an extremely low value of 0.07.

• 신재생에너지
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• 제4권2호
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• pp.68-73
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• 2008

It is very important that constitution of good hetero-junction interface with a high quality amorphous silicon thin films on very cleaned c-Si wafer for making high efficiency hetero-junction solar cells. For achieving the high efficiency solar cells, the inspection and management of c-Si wafer surface conditions are essential subjects. In this experiment, we analyzed the c-Si wafer surface very sensitively using Spectroscopic Ellipsometer for < ${\varepsilon}2$ > and u-PCD for effective carrier life time, so we accomplished < ${\varepsilon}2$ > value 43.02 at 4.25eV by optimizing the cleaning process which is representative of c-Si wafer surface conditions very well. We carried out that the deposition of high quality hydrogenated silicon amorphous thin films by RF-PECVD systems having high density and low crystallinity which are results of effective medium approximation modeling and fitting using spectroscopic ellipsometer. We reached the cell efficiency 12.67% and 14.30% on flat and textured CZ c-Si wafer each under AM1.5G irradiation, adopting the optimized cleaning and deposition conditions that we made. As a result, we confirmed that spectroscopic ellipsometry is very useful analyzing methode for hetero-junction solar cells which need to very thin and high quality multi layer structure.

• Transactions on Electrical and Electronic Materials
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• 제13권4호
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• pp.192-195
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• 2012

We reported diborane ($B_2H_6$) doped wide bandgap hydrogenated amorphous silicon oxide (p-type a-SiOx:H) films prepared by using silane ($SiH_4$) hydrogen ($H_2$) and nitrous oxide ($N_2O$) in a radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) system. We improved the $E_{opt}$ and conductivity of p-type a-SiOx:H films with various $N_2O$ and $B_2H_6$ ratios and applied those films in regards to the a-Si thin film solar cells. For the single layer p-type a-SiOx:H films, we achieved an optical band gap energy ($E_{opt}$) of 1.91 and 1.99 eV, electrical conductivity of approximately $10^{-7}$ S/cm and activation energy ($E_a$) of 0.57 to 0.52 eV with various $N_2O$ and $B_2H_6$ ratios. We applied those films for the a-Si thin film solar cell and the current-voltage characteristics are as given as: $V_{oc}$ = 853 and 842 mV, $J_{sc}$ = 13.87 and 15.13 $mA/cm^2$. FF = 0.645 and 0.656 and ${\eta}$ = 7.54 and 8.36% with $B_2H_6$ ratios of 0.5 and 1% respectively.

• Asian-Australasian Journal of Animal Sciences
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• 제16권2호
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• pp.306-314
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• 2003

Bio-hydrogenation of $C_{18}$-unsaturated fatty acids released from the hydrolysis of dietary lipids in the rumen, in general, occurs rapidly but the range of hydrogenation is quite large, depending on the degree of unsaturation of fatty acids, the configuration of unsaturated fatty acids, microbial type and the experimental condition. Conjugated linoleic acid (CLA) is incompletely hydrogenated products by rumen microorganisms in ruminant animals. It has been shown to have numerous potential benefits for human health and the richest dietary sources of CLA are bovine milk and milk products. The cis-9, trans-11 is the predominant CLA isomer in bovine products and other isomers can be formed with double bonds in positions 8/10, 10/12, or 11/13. The term CLA refers to this whole group of 18 carbon conjugated fatty acids. Alpha-linolenic acid goes through a similar bio-hydrogenation process producing trans-11 $C_{18:1}$ and $C_{18:0}$, but may not appear to produce CLA as an intermediate. Although the CLA has been mostly derived from the dietary $C_{18:2}$ alternative pathway may be existed due to the extreme microbial diversity in the reticulo-rumen. Regardless of the origin of CLA, manipulation of the bio-hydrogenation process remains the key to increasing CLA in milk and beef by dietary means, by increasing rumen production of CLA. Although the effect of oil supplementation on changes in fatty acid composition in milk seems to be clear its effect on beef is still controversial. Thus further studies are required to enrich the CLA in beef under various dietary and feeding conditions.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.391-391
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• 2016

The carrier transport is a key factor that determines the device performances of semiconductor devices such as solar cells and transistors [1]. Particularly, devices composed of in amorphous semiconductors, the transport is often restricted by carrier trapping, associated with various defects. So far, the trapping has been studied for as-grown films at room temperature; however it has not been studied during growth under plasma processing. Here, we demonstrate the detection of trapped carriers in hydrogenated amorphous silicon (a-Si:H) films during plasma processing, and discuss the carrier trapping and defect kinetics. Using an optically pump-probe technique, we detected the trapped carriers (electrons) in an a-Si:H films during growth by a hydrogen diluted silane discharge [2]. A device-grade intrinsic a-Si:H film growing on a glass substrate was illuminated with pump and probe light. The pump induced the photocurrent, whereas the pulsed probe induced an increment in the photocurrent. The photocurrent and its increment were separately measured using a lock-in technique. Because the increment in the photocurrent originates from emission of trapped carriers, and therefore the trapped carrier density was determined from this increment under the assumption of carrier generation and recombination dynamics [2]. We found that the trapped carrier density in device grade intrinsic a-Si:H was the order of 1e17 to 1e18 cm-3. It was highly dependent on the growth conditions, particularly on the growth temperature. At 473K, the trapped carrier density was minimized. Interestingly, the detected trapped carriers were homogeneously distributed in the direction of film growth, and they were decreased once the film growth was terminated by turning off the discharge.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.147.2-148
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• 2016

Light management technology is very important for thin film solar cells, which can reduce optical reflection from the surface of thin film solar cells or enhance optical path, increasing the absorption of the incident solar light. Using proper light trapping structures in hydrogenated amorphous silicon (a-Si:H) solar cells, the thickness of absorber layers can be reduced. Instead, the internal electric field in the absorber can be strengthened, which helps to collect photon generated carriers very effectively and to reduce light-induced loss under long-term light exposure. In this work, we introduced a chemical etching technology to make honey-comb textures on glass substrates and analyzed the optical properties for the textured surface such as transmission, reflection and scattering effects. Using ray optics and finite difference time domain method (FDTD) we represented the behaviors of light waves near the etched surfaces of the glass substrates and discussed to obtain haze parameters for the different honey-comb structures. The simulation results showed that high haze values were maintained up to the long wavelength range over 700 nm, and with the proper design of the honey-comb structure, reflection or transmission of the glass substrates can be enhanced, which will be very useful for the multi-junction (tandem or triple junction) thin film a-Si:H solar cells.

• 공업화학
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• 제10권7호
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• pp.1003-1007
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• 1999

금을 공침법으로 고분산시켜 제조한 촉매와 함침법으로 제조한 금 및 코발트 촉매상에서의 부타디엔과 펜타디엔의 수소화 활성 및 생성물 분포를 상압 유통식 반응기에서 조사하여, 고분산 금 입자의 수소화 반응특성 및 그의 역할에 대하여 검토하였다. 고분산된 담지 금 촉매의 수소화 활성은 함침법으로 제조한 촉매에 비하여 크게 증가하였고, 100% 전환율에서도 부분 수소화만이 진행되어 부텐의 선택율은 거의 100%이었다. 그러나 코발트 담지 촉매에서는 부탄까지 쉽게 수소화되었다. 이와 같은 금 촉매의 특성은 담체와의 계면에 존재하는 금이 수소화 적절한 친화력을 가지는 독특한 성질 때문으로 생각되었다. 고분산 담지 금 촉매의 부타디엔 및 펜타디엔에 대한 생성물 분포에서 각각 1-부텐이 60~67%, 그리고 2-펜텐이 약 62%로 거의 일정하게 얻어졌는데, 이는 공역디엔의 통계학적 수소부가 개념으로 설명할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.136.1-136.1
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• 2015

In the present study, UHF (320 MHz) in combination with RF (13.56 MHz) plasmas was used for the synthesis of hydrogenated silicon nitride (SiNx:H) films by PECVD process at low temperature. RF/UHF hybrid plasmas were maintained at a fixed pressure of 410 mTorr in the N2/SiH4 and N2/SiH4/NH3 atmospheres. To investigate the radical generation and plasma formation and their control for the growth of the film, plasma diagnostic tools like vacuum ultraviolet absorption spectroscopy (VUVAS), optical emission spectroscopy (OES), and RF compensated Langmuir probe (LP) were utilized. Utilization of RF/UHF hybrid plasmas enables very high plasma densities ~ 1011 cm-3 with low electron temperature. Measurements using VUVAS reveal the UHF source is quite effective in the dissociation of the N2 gas to generate more active atomic N. It results in the enhancement of the Si-N bond concentration in the film. Consequently, the deposition rate has been significantly improved up to 2nm/s for the high rate synthesis of highly transparent (up to 90 %) SiNx:H film. The films properties such as optical transmittance and chemical composition are investigated using different analysis tools.