• Journal of Welding and Joining
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• 제5권1호
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• pp.34-41
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• 1987

To explore the possible application of thermal analysis technique as a probe for finding weld defects, Hydrogen trapping phenomena in Heat Affected Zone (HAZ) of the AISI 5160 spring steel were investigated. HAZ was divided into five parts, which were used as thermal analysis specimens. Two types of trap sites were found in HAZ, ferrite/cementin interface and microvoid. The thermal analysis peak due to the ferrite/cementite interface increased its height toward the weld deposit. The thermal analysis peak due to the microvoid was the highest where the grain size was the smallest. The correspondence between the cold cracking and hydrogen trap nature is also discussed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1315-1317
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• 1998

We have investigated the effects of electrical stress on poly-Si TFTs with different hydrogen passivation conditions. The amounts of threshold voltage shift of hydrogen passivated poly-Si TFTs are much larger than those of as-fabricated devices both under the gate bias stressing and under the gate and drain bias stressing. Also, we have quantitatively analized the degradation phenomena using by analytical method. we have suggested that the electron trapping in the gate dielectric is the dominant degradation mechanism in only gate bias stressed poly-Si TFT while the creation of defects in the poly-Si is prevalent in gate and drain bias stressed device.

• 대한전자공학회논문지SD
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• 제41권8호
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• pp.1-8
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• 2004

두께가 3nm인 게이트 산화막을 사용한 n-MOSFET에 정전압 스트레스를 가하였을 때 관찰되는 SILC 및 soft breakdown 열화 및 이러한 열화가 소자 특성에 미치는 영향에 대해 실험하였다. 열화 현상은 인가되는 게이트 전압의 극성에 따라 그 특성이 다르게 나타났다. 게이트 전압이 (-)일 때 열화는 계면 및 산화막내 전하 결함에 의해 발생되었지만, 게이트 전압이 (＋)일 때는 열화는 주로 계면 결함에 의해 발생되었다. 또한 이러한 결함의 생성은 Si-H 결합의 파괴에 의해 발생할 수 있다는 것을 중수소 열처리 및 추가 수소 열처리 실험으로부터 발견하였다. OFF 전류 및 여러 가지 MOSFET의 전기적 특성의 변화는 관찰된 결함 전하(charge-trapping)의 생성과 직접적인 관련이 있다. 그러므로 실험 결과들로부터 게이트 산화막으로 터널링되는 전자나 정공에 의한 Si 및 O의 결합 파괴가 게이트 산화막 열화의 원인이 된다고 판단된다. 이러한 물리적 해석은 기존의 Anode-Hole Injection 모델과 Hydrogen-Released 모델의 내용을 모두 포함하게 된다.

• 대한금속재료학회지
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• 제50권1호
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• pp.52-58
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• 2012

Hydrogen-delayed fracture (HDF) was analyzed from the deposited weld metals of 600-MPa and 800-MPa flux-cored arc (FCA) welding wires, and then from the diffusible hydrogen behavior of the weld zone. Two types of deposited weld metal, that is, rutile weld metal and alkali weld metal, were used for each strength level. Constant loading test (CLT) and thermal desorption spectrometry (TDS) analysis were conducted on the hydrogen pre-charged specimens electrochemically for 72 h. The effects of microstructures such as acicular ferrite, grain-boundary ferrite, and low-temperature-transformation phase on the time-to-failure and amount of diffusible hydrogen were analyzed. The fracture time for hydrogen-purged specimens in the constant loading tests decreased as the grain size of acicular ferrite decreased. The major trapping site for diffusible hydrogen was the grain boundary, as determined by calculating the activation energies for hydrogen detrapping. As the strength was increased and alkali weld metal was used, the resistance to HDF decreased.

• Childhood Kidney Diseases
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• 제14권2호
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• pp.120-131
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• 2010

Renal tubular acidosis (RTA) is a metabolic acidosis due to impaired excretion of hydrogen ion, or reabsorption of bicarbonate, or both by the kidney. These renal tubular abnormalities can occur as an inherited disease or can result from other disorders or toxins that affect the renal tubules. Disorders of bicarbonate reclamation by the proximal tubule are classified as proximal RTA, whereas disorders resulting from a primary defect in distal tubular net hydrogen secretion or from a reduced buffer trapping in the tubular lumen are called distal RTA. Hyperkalemic RTA may occur as a result of aldosterone deficiency or tubular insensitivity to its effects. The clinical classification of renal tubular acidosis has been correlated with our current physiological model of how the nephron excretes acid, and this has facilitated genetic studies that have identified mutations in several genes encoding acid and base ion transporters. Growth retardation is a consistent feature of RTA in infants. Identification and correction of acidosis are important in preventing symptoms and guide approved genetic counseling and testing.

• Bulletin of the Korean Chemical Society
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• 제23권2호
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• pp.205-214
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• 2002

The reaction of gas-phase atomic hydrogen with hydrogen atoms chemisorbed on a silicon surface is studied by use of the classical trajectory approach. Especially, we have focused on the mechanism changes with the hydrogen surface coverage difference. On the sparsely covered surface, the gas atom interacts with the preadsorbed hydrogen atom and adjacent bare surface sites. In this case, it is shown that the chemisorption of H(g) is of major importance. Nearly all of the chemisorption events accompany the desorption of H(ad), i.e., adisplacement reaction. Although much less important than the displacement reaction, the formation of $H_2(g)$ is the second most significant reaction pathway. At gas temperature of 1800 K and surface temperature of 300 K, the probabilities of these two reactions are 0.750 and 0.065, respectively. The adsorption of H(g) without dissociating H(ad) is found to be negligible. In the reaction pathway forming $H_2$, most of the reaction energy is carried by $H_2(g)$. Although the majority of $H_2(g)$ molecules are produced in sub-picosecond, direct-mode collisions, there is a small amount of $H_2(g)$ produced in multiple impact collisions, which is characteristic of complex-mode collisions. On the fully covered surface, it has been shown that the formation of $H_2(g)$ is of major importance. All reactive events occur on a subpicosecond scale, following the Eley-Rideal mechanism. At gas temperature of 1800 K and surface temperature of 300 K, the probability of the $H_2(g)$ formation reaction is 0.082. In this case, neither the gas atom trapping nor the displacement reaction has been found.

• 대한화학회지
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• 제38권8호
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• pp.570-575
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• 1994

$\alpha$-Methylpyridine유도체1(a∼f)는 n-BuLi과의 반응에서 $\alpha$-methylenylpyridinium 염 3(a∼f)을 형성한다. 3(a∼f)와 $Me_3SiCl$ 및 $Me_2SiClCH(SiMe_3)CH_2tBu$반응에서 생성물 4(a∼f) 와 5(a∼f)을 형성한다. 화합물 4(a∼f)에 있는 규소원자와 결합된 methylene기의 수소원자는 화합물 4(a∼f)의 $CH_3$기 보다 n-BuLi과의 반응성이 큰 것으로 확인되었다.

• Journal of Korean Vacuum Science & Technology
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• 제6권3호
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• pp.133-138
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• 2002

The growth of Au films grown on a Si(100)-2x1 surface and Si films on a Ge(100)-2x1 substrate is studied using Positron-annihilation induced Auger Electron Spectroscopy(PAES), Electron induced Auger Electron Spectroscopy(EAES), and Low Energy Electron Diffraction(LEED). Previous work has shown that PAES is almost exclusively sensitive to the top-most atomic layer due to the trapping of positrons in an image potential well just outside the surface before annihilation. This surface specificity is exploited to profile the surface atomic concentrations during the growth of Au on Si(100) and Si on Ge(100) and EAES provides concentrations averaged over the top 3-10 atomic layers simultaneously. The difference in the probe-depth makes us possible to use PAES and EAES in a complementary fashion to estimate the surface and near surface concentration profiles. The results show that (i) the intermixing of Au and Si atoms occurs during the room temperature deposition, (ii) the segregated Ge layer is observed onto the Si layers deposited at 300k. In addition, the prior adsorption of hydrogen prevents the segregation of Ge on top of the deposited Si and that the hydrogen adsorption is useful in growing a thermally stable structure.

• 반도체디스플레이기술학회지
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• 제23권2호
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• pp.60-64
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• 2024

The threshold voltage shift in thin-film transistors (TFTs) is modeled using stretched-exponential (SE) and stretched-hyperbola (SH) functions. These models are derived by introducing empirical parameters into reaction rate equations that describe defect generation or charge trapping caused by hydrogen diffusion in the dielectric or interface. Separately, the dielectric relaxation phenomena are also described by the same reaction rate equations based on defect diffusion. Dielectric relaxation was initially modeled using the SE model, and various models have been proposed using fractional calculus. In this study, the characteristics of the threshold voltage shift and the dielectric relaxation phenomena are compared and analyzed to explore the applicability of analytical models used in the field of dielectric relaxation, in addition to the conventional SE and SH models.

• 대한화학회지
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• 제8권4호
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• pp.188-191
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• 1964

微量元素分析用 燃燒爐 內에서 內部酸化劑(酸化銀과 二酸化 망간의 混合物)와 함께 有機試料를 헤륨 氣流下에서 燃燒시키고 發生한 물은 칼슘카바이드管에 通하여 아세틸렌으로 變換시킨다. 二酸化炭素와 아세틸렌을 molecular sieve 5A 管에 室溫에서 吸着시킨 후 $340^{\circ}C$까지 溫度${\cdot}$프로그탬法으로 脫着시켜 실리카켈管을 通하여 分別流出시키고 熱傳導式 檢知器로 $CO_2$와 $C_2H_2$를 定量하는 方法을 發展시켰다. 벤조酸을 標準物質로 하여 作成한 檢量線을 使用하여 各種 有機試料中의 炭素 및 水素含量을 分析한 結果 平均誤差가 炭素의 경우 ${\pm}0.5%$, 水素인 경우${\pm}0.33%$ 이었다.