• Journal of the Korean Society of Tobacco Science
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• v.29 no.2
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• pp.125-131
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• 2007

Hydrogen cyanide(HCN), formed from pyrolysis of various nitrogenous compounds such as protein, amino acids and nitrate in tobacco, is present in both the particulate phase and vapor phase of cigarette smoke. Typically the determination of HCN in cigarette smoke has been done through colorimetric and electrochemical techniques, such as fluorescence spectrometry, UV-spectrophotometry (UV), continuous flow analyzer (CFA), capillary GC-ECD and ion chromatography (IC). Most of these techniques are known to be time-consuming and some of them lack specificity or sensitivity. The available results from both our laboratory and reported literatures for 2R4F Kentucky reference cigarette, smoked under ISO condition, show a relatively wide variation ranging from 100 to 120 ug/cig of HCN. Especially, the precision and accuracy of the analytical results of HCN tend to get worse in low tar cigarettes and under intense smoking condition. In this paper, a more optimized analytical methods than previous ones are suggested. This method shows lower detection limit and has improved precision and accuracy, so it is applicable for wide tar level cigarettes under intense smoking condition as well as under ISO smoking condition. Important features of this method are improved sample collection and quantification systems such as the number of trapping units, volume, temperature and type of trapping solution. To avoid volatilization loss of HCN in analyzing mainstream smoke, it is highly recommended that pH values of trapping solutions should be maintained over 11 and cold traps should be used in collecting mainstream smoke.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.11
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• pp.7-13
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• 2004

Experimental results are presented for the degradation of 3 nm-thick gate oxide under -2.5V $\leq$ V$_{g}$ $\leq$-4.0V stress and 10$0^{\circ}C$ conditions using P and NMOSFETs that are annealed with hydrogen or deuterium gas at high-pressure (5 atm). The degradation mechanisms are highly dependent on stress conditions. For low gate voltage, hole-trapping is found to dominate the reliability of gate oxide both in P and NMOSFETs. With increasing gate voltage to V$_{g}$ =-4.0V, the degradation becomes dominated by electron-trapping in NMOSFETs, however, the generation rate of "hot" hole was very low, because most of tunneling electrons experienced the phonon scattering before impact ionization at the Si interface. Statistical parameter variations as well as the gate leakage current depend on and are improved by high-pressure deuterium annealing, compared to corresponding hydrogen annealing. We therefore suggest that deuterium is effective in suppressing the generation of traps within the gate oxide. Our results therefore prove that hydrogen related processes are at the origin of the investigated oxide degradation.gradation.

• Journal of the Korean Society of Tobacco Science
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• v.31 no.1
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• pp.39-44
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• 2009

Hydrogen cyanide (HCN) is present in both the particulate and vapor phase of cigarette mainstream smoke. It is one of the 44 harmful substances on Hoffmann's list and is known to be a major ciliatoxic agent in cigarette mainstream smoke. Typically the determination of HCN in cigarette mainstream smoke has been done through colorimetric and electrochemical techniques, such as UV-spectrophotometry (UV), continuous flow analyzer (CFA), ion chromatography (IC) and capillary GC-ECD. In particular, CFA commonly has been using analysis hydrogen cyanide in cigarette smoke and the basic principle is pyridine-pyrazolone reaction. In this study, the more optimized analytical method is suggested isonicotinic acid-pyrazolone reaction method than previous pyridine-pyrazolone reaction method, a commonly used method for the determination of cyanide in water and air, by CFA. Sample collection was optimized by trapping particulate and vapor phase of smoke separately. The optimum NaOH concentration of the trapping solution was shown to be 0.2 M. HCN was stable up to 6 hours in this concentration but only 3 hours in 0.1 M solution. The sensitivity of this method was fairly good and it might be used in analysis of HCN in cigarette mainstream smoke.

• Journal of the Korean Ceramic Society
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• v.20 no.4
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• pp.356-360
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• 1983

The photocurrent vs. potential characteristics of the $TiO_2$ ceramic electrodes have been investigated as functions of numerous variables including sample purity hydrogen reduction condition and pH of the electrolyte. The difference inphotoresponse between 99.99% and 98.5% $TiO_2$ electrodes was due to electron trapping effect. As the hydrogen reducing temperature of $TiO_2$ electrodes were increased the photocurrent was also increased to certain condition and then decreased. These results can be explained by the behavior of oxygen vacancies.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.221-221
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• 2013

Striving to replace the well known silicon nanocrystals embedded in oxides with solution-processable charge-trapping materials has been debated because of large scale and cost effective demands. Herein, a silicon quantum dot-polystyrene nanocomposite (SiQD-PS NC) was synthesized by postfunctionalization of hydrogen-terminated silicon quantum dots (H-SiQDs) with styrene using a thermally induced surface-initiated polymerization approach. The NC contains two miscible components: PS and SiQD@PS, which respectively are polystyrene and polystyrene chains-capped SiQDs. Spin-coated films of the nanocomposite on various substrate were thermally annealed at different temperatures and subsequently used to construct metal-insulator-semiconductor (MIS) devices and thin film field effect transistors (TFTs) having a structure p-$S^{++}$/$SiO_2$/NC/pentacene/Au source-drain. C-V curves obtained from the MIS devices exhibit a well-defined counterclockwise hysteresis with negative fat band shifts, which was stable over a wide range of curing temperature ($50{\sim}250^{\circ}C$. The positive charge trapping capability of the NC originates from the spherical potential well structure of the SiQD@PS component while the strong chemical bonding between SiQDs and polystyrene chains accounts for the thermal stability of the charge trapping property. The transfer curve of the transistor was controllably shifted to the negative direction by chaining applied gate voltage. Thereby, this newly synthesized and solution processable SiQD-PS nanocomposite is applicable as charge trapping materials for TFT based memory devices.

• Korean Journal of Materials Research
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• v.20 no.11
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• pp.581-585
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• 2010

High strength sheet steels for automobile are seriously compromised by hydrogen embrittlement. This issue has been continuously studied, but the field of interest, which lies between microstructural characteristics and hydrogen behavior with hydrogen charging, has not yet been thoroughly investigated. This study was done to investigate the behavior of hydrogen according to the hydrogen volume fraction on 590MPa grade DP steels, which are developed under hydrogen charging conditions as high strength sheet steels for automobiles. The penetration depths and the mechanical properties, according to charging conditions, were investigated through the distribution of micro-hardness and the microstructural observation of the subsurface zone. It was found that the amount of hydrogen trapping in 590MPa DP steels was related to the austenite volume fraction. It was confirmed that the distribution of micro-hardnesses according to the depth of the subsurface zone under the free surface showed the relationship of the depth of the hydrogen saturation between the charging conditions.

• Corrosion Science and Technology
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• v.22 no.5
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• pp.341-350
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• 2023

In the present study, effects of a thin Zn-flash coating on hydrogen evolution, infusion, and embrittlement of advanced high strength steel during electro-galvanizing were examined. The electrochemical permeation technique in conjunction with impedance spectroscopy was employed under applied cathodic polarization. Moreover, a slow-strain rate test was conducted to evaluate loss of elongation (i.e., indicative of hydrogen embrittlement (HE)) and examine fracture surfaces. Results showed that the presence of a thin Zn-flash coating, even when it was not distributed uniformly, reduced hydrogen evolution rate and substantially impeded infusion of hydrogen into the steel substrate. This was primarily due to a hydrogen overvoltage on Zn coating and trapping of hydrogen at the interface of Zn coating/flash coating/steel substrate. Consequently, the sample with flash coating had a smaller HE index than the sample without flash coating. These results suggest that a thin Zn-flash coating could be an effective technical strategy for mitigating HE in advanced high-strength steels.

• Journal of the Korean Ceramic Society
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• v.39 no.7
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• pp.635-641
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• 2002

Electrical conduction of $SrZrO_3$ doped with $Y_2O_3$ was measured as a function of gas atmosphere and temperature by impedance spectroscopy. Hydrogen dissolution, due to an enhanced driving force in the presence of oxygen, results in protonation by water incorporation. Proton conductivity increased with water vapor pressure, ${P_w}^{1/2}$. In the pure hydrogen atmosphere, the dissolution of hydrogen,$H_2(g)=2H_{i}$ +2e', is supposed to be driven by a reduced activity of electrons, ascribable to their trapping in oxygen vacancies. The activation energy of electrical conductivity was 50 kJ/mol, in wet argon atmosphere in the temperature range of $600~900^{\circ}C$, similar to those reported for proton conduction in the literature. Grain boundary effect in proton conduction was substantial in the 10% doped case at temperatures lower than $700^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.391-391
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• 2016

The carrier transport is a key factor that determines the device performances of semiconductor devices such as solar cells and transistors [1]. Particularly, devices composed of in amorphous semiconductors, the transport is often restricted by carrier trapping, associated with various defects. So far, the trapping has been studied for as-grown films at room temperature; however it has not been studied during growth under plasma processing. Here, we demonstrate the detection of trapped carriers in hydrogenated amorphous silicon (a-Si:H) films during plasma processing, and discuss the carrier trapping and defect kinetics. Using an optically pump-probe technique, we detected the trapped carriers (electrons) in an a-Si:H films during growth by a hydrogen diluted silane discharge [2]. A device-grade intrinsic a-Si:H film growing on a glass substrate was illuminated with pump and probe light. The pump induced the photocurrent, whereas the pulsed probe induced an increment in the photocurrent. The photocurrent and its increment were separately measured using a lock-in technique. Because the increment in the photocurrent originates from emission of trapped carriers, and therefore the trapped carrier density was determined from this increment under the assumption of carrier generation and recombination dynamics [2]. We found that the trapped carrier density in device grade intrinsic a-Si:H was the order of 1e17 to 1e18 cm-3. It was highly dependent on the growth conditions, particularly on the growth temperature. At 473K, the trapped carrier density was minimized. Interestingly, the detected trapped carriers were homogeneously distributed in the direction of film growth, and they were decreased once the film growth was terminated by turning off the discharge.

• Corrosion Science and Technology
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• v.18 no.3
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• pp.102-109
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• 2019

The hydrogen diffusion and trapping model with a numerical finite difference method (FDM) was modified and extended to accommodate $H_2S$ corrosion and scale forming processes of high-strength steel under tensile stress condition. The newly proposed diffusion model makes it possible to clearly understand combined effect of tensile stress and $H_2S$ corrosion process on hydrogen diffusion behaviors. The core concept of this theoretical approach is that overall diffusion behavior is separated into diffusion process through two respective layers: an outer sulfide scale and an inner steel matrix. Diffusion coefficient values determined by curve-fitting permeation data reported previously with the newly proposed diffusion model indicate that the application of tensile stress can contribute to continual increase in the diffusivity in the sulfide scale with a high density of defect. This suggests that the scale with a lower stability under the stress condition can be a key parameter to enhance hydrogen influx in the steel matrix. Consequently, resistance to hydrogen assisted cracking of the steel under tensile stress can be decreased significantly.