• 센서학회지
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• 제33권2호
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• pp.63-69
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• 2024

A novel method for measuring hydrogen concentration is introduced, along with its working principle and a novel detection algorithm. This configuration requires no additional reference compartment for potentiometric electrochemical measurements; therefore, it is the most suitable for measuring dissolved hydrogen in the liquid phase. The sensor's electromotive force saturates at a certain point, depending on the hydrogen concentration during the heating process of the sensor operation. This dynamic temperature scanning method provides higher sensitivity than the constant temperature measurement method.

• 한국수소및신에너지학회논문집
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• 제16권2호
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• pp.136-141
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• 2005

Li-doped NiO was synthesized by molten salt method. $LiNO_3$-LiOH flux was used as a source for Li doping. $NiCl_2$ was added to the molten Li flux and then processed to make the Li-doped NiO material. Li:Ni ratios were maintained from 5:1 to 30:1 during the synthetic procedure and the Li doping amount of synthesized materials were found between 0.086-0.190 as a Li ion to Ni ion ratio. Li doping did not change the basic cubic structural characteristics of NiO as evidenced by XRD studies, however the lattice parameter decreased from 0.41769nm in pure NiO to 0.41271nm as Li doping amount increased. Hydrogen gas sensors were fabricated using these materials as thick films on alumina substrates. The half surface of each sensor was coated with the Pt catalyst. The sensor when exposed to the hydrogen gas blended in air, heated up the catalytic surface leaving rest half surface (without catalyst) cold. The thermoelectric voltage thus built up along the hot and cold surface of the Li-doped NiO made the basis for detecting hydrogen gas. The linearity of the voltage signal vs $H_2$ concentration was checked up to 4% of $H_2$ in air (as higher concentrations above 4.65% are explosive in air) using Li doped NiO of Li ion/Ni ion=0.111 as the sensor material. The response time T90 and the recovery time RT90 were less than 25 sec. There was minimum interference of other gases and hence $H_2$ gas can easily be detected.

• 센서학회지
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• 제6권2호
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• pp.131-136
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• 1997

The ISFET(ion sensitive field effect transistor), a semiconductor ion sensor, has many advantages over conventional ion sensors. Various single-sensor type ISFET pH-meters have been developed. However, they could not be applied in fields because their performances are directly affected by the sensor condition. With only one sensor, the system could be easily damaged from environmental factors, and reliability of it is decreased. Therefore, a 4-channel PH-meter system is proposed to improve the reliability of ISFET pH-meter. It has 4 ISFETS as ion sensor, and a software which contains a new calibration and measurement algorithm appropriate to the system. The reliability of the system was proved by measuring hydrogen ion concentration in the pH standard solutions and buffer solutions.

• 센서학회지
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• 제21권2호
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• pp.90-95
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• 2012

This paper describes the development of a glucose biosensor based on ion sensitive field effect transistor(ISFET) with a palladium(Pd) modified ion sensing membrane. By adopting Pd as a hydrogen sensitive layer and integrating a screen-printed reference electrode, the sensitivity and stability were considerably improved due to the high permeability and selectivity of the Pd hydrogen selective membrane. This paper suggests a new approach for realizing portable and highly sensitive glucose sensors for diagnosing and treating diabetes mellitus.

• 센서학회지
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• 제24권1호
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• pp.6-9
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• 2015

Conventional leak detectors are widely based on helium gas sensors. However, the usage of hydrogen sensors in leak detectors has increased because of the high prices of helium leak detectors and the dearth in the supply of helium gas. In this study, a hydrogen leak detector was developed using solid-state hydrogen sensors. The hydrogen sensors are based on Park-Rapp probes with heterojunctions made by oxygen-ion conducting Yttria-stabilized zirconia and proton-conducting In-doped $CaZrO_3$. The hydrogen sensors were used for determining the potential difference between air and air balanced 5 ppm of $H_2$. Even though the Park-Rapp probe shows an excellent selectivity for hydrogen, the sensitivity of the sensor was low because of the low concentration of hydrogen, and the oxygen on the surface of the sensor. In order to increase the sensitivity of the sensor, the sensors were connected in series by Pt wires to increase the potential difference. The sensors were tested at temperatures ranging from $500-600^{\circ}C$.

• 센서학회지
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• 제28권2호
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• pp.76-80
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• 2019

The characteristics of a titanium oxide layer prepared using a plasma electrolytic oxidation (PEO) process were investigated, using an extended gate ion sensitive field effect transistor (EG-ISFET) to confirm the layer's capability to react with hydrogen ions. The surface morphology and element distribution of the PEO-processed titanium oxide were observed and analyzed using field-emission scanning-electron microscopy (FE-SEM) and energy-distribution spectroscopy (EDS). The titanium oxide prepared by the PEO process was utilized as a hydrogen-ion sensing membrane and an extended gate insulator. A commercially available n-channel enhancement MOS-FET (metal-oxide-semiconductor FET) played a role as a transducer. The responses of the PEO-processed titanium oxide to different pH solutions were analyzed. The output drain current was linearly related to the pH solutions in the range of pH 4 to pH 12. It was confirmed that the titanium-oxide layer prepared by the PEO process could feasibly be used as a hydrogen-ion-sensing membrane for EGFET measurements.

• 센서학회지
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• 제5권4호
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• pp.35-40
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• 1996

수소이온운반체로 HDBA(hexyldibenzylamine)나 HDPA(hexyldiphenylamine)을 이용하여 고분자막 pH 센서를 제작하였고, 온도 및 막의 두께 변화에 대한 전기화학적 특성을 연구하였다. HDPA를 이용한 센서는 수소이온에 대하여 선택적으로 감응하지 않았으며, HDBA를 이용한 센서는 pH 2 - pH 10 범위에서 수소이온에 대하여 선형적이고, 응답시간도 30 - 50초로 매우 빠르며, Nernstian 기울기는 53.6mV/pH을 나타내었다. pH 센서는 유리전극과 비교하여 알칼리금속과 알칼리토 금속이온에 대하여 방해를 적게 받았고, 재현성 및 안정성에 대한 편차는 2 - 4mV(${\pm}0.1mV$)로 우수하게 나타내었다.

• 한국환경과학회:학술대회논문집
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• 한국환경과학회 2003년도 International Symposium on Clean Environment
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• pp.103-108
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• 2003

A method to determine chromium(III) ion in aqueous solution by chemiluminescence method using a lucigenin entrapped silica sol-gel film has been studied. An optical probe for chromium(III) ion has been prepared by entrapping lucigenin into silica sol-gel film coated on a glass support by dip coating. The chromium(III) optical sensor is based on the catalytic effect of chromium(IIII) ion on the reaction between lucigenin and hydrogen peroxide in basic solutions. The effects of Nafion, DMF and Triton X-100 were investigated to find the optimum condition to minimize cracking and leaching from the probe. The effects of pH and concentrations of lucigenin and hydrogen peroxide on the chemiluminescence intensity were investigated. The chemiluminescence intensity was increased linearly with increasing chromium(III) concentration from $2.5{\times}10^{-4}$M to $8.0{\times}10^{-7}$M and the detection limit was $4.0{\times}10^{-7}$M.

• 대한임상검사과학회지
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• 제38권1호
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• pp.59-64
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• 2006

The pH-ISE(ion selective electrode) based on tribenzylamine as a hydrogen ion carrier was prepared and its electrochemical characterization was studied. It responded linearly to hydrogen ions in the range of pH 3.1 - pH 11.0 and the Nernstian slope showed 55.0 mV/pH (at $20{\pm}0.2^{\circ}C$), it also showed a fast response time of 8 sec. When it was directly applied to human blood(pH 6.0-8.5), we could get the same satisfying results. A good reproducibility and stability were shown with the precision of 2 mV (${\pm}0.1$). The pH-ISE based on tribenzylamine exhibited biocompatibility in clinical applications.

• 열처리공학회지
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• 제25권6호
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• pp.279-282
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• 2012

$SnO_2$ thin films were prepared on the Si substrate by radio frequency (RF) magnetron sputtering and then surface of the films were irradiated with intense Ar ion beam to investigate the effect of Ar ion irradiation on the properties and hydrogen gas sensitivity of the films. From atomic force microscope observation, it is supposed that intense Ar bombardments promote rough surface and increase gas sensitivity of $SnO_2$ films for hydrogen gas. The films that Ar ion beam irradiated at 6 keV show the higher sensitivity than the films were irradiated at 3 keV and 9 keV. These results suggest that the $SnO_2$ thin films irradiated with optimized Ar ion beam are promising for practical high-performance hydrogen gas sensors.