• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.135-135
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• 2003

This paper presents the preparation of SnO$_2$ films by Sol-Gel process and using spin coating method, and their sensing properties in CO gas. Experimental procedure consisted of following steps: (1) Tin chloride(SnCl$_4$) and Ammonium hydrogen carbonate (NH$_4$HCO$_3$) were used as precursors; (2) the Sol solution with concentration of about 10wt% SnO$_2$ was prepared from washed Gel-precipitate for spin coating step; (3) thereafter, the coating solution was dropped onto the alumina (Al$_2$O$_3$) substrate that was then spun, the spin coating was carried out with total 10 times; (4) finally, the films were calcined for 3 hours at 50$0^{\circ}C$ or higher temperature (600, 700, 800 or 90$0^{\circ}C$) in order to obtain various gram sizes. The average grain size was calculated by Scherrer's equation using main peaks in XRD spectra; meanwhile the thickness, microstructure and surface morphology of the films were observed by FE-SEM.

• Journal of Sensor Science and Technology
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• v.22 no.3
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• pp.175-180
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• 2013

This paper describes the characteristics of cubic silicon carbide (3C-SiC) films grown on a carbonized Si(100) substrate, using hexamethyldisilane (HMDS, $Si_2(CH_3)_6$) as a safe organosilane single precursor in a nonflammable $H_2$/Ar ($H_2$ in Ar) mixture carrier gas by atmospheric pressure chemical vapor deposition (APCVD) at $1280^{\circ}C$. The growth process was performed under various conditions to determine the optimized growth and carbonization condition. Under the optimized condition, grown film has a single crystalline 3C-SiC with well crystallinity, small voids, low residual stress, low carrier concentration, and low RMS. Therefore, the 3C-SiC film on the carbonized Si (100) substrate is suitable to power device and MEMS fields.

• Proceedings of the KIEE Conference
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• summer
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• pp.602-603
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• 2004

전력용 변압기에 아크나 코로나가 발생하여 국부가열이 존재하면 절연유나 절연지가 분해하여 저분자의 탄화수소, 수소, 탄화가스, 일산화탄소 둥이 발생하여 절연유에 용해된다. 절연유에 용해된 가스를 실시간 분석하여 변압기의 이상을 조기에 발견하여 운전의 효율성을 높이고 고장을 사전에 예방하기 위한 기술이 전개되고 있다. 경제적인 측면에서 단일 수소가스 검출센서가 널리 보급되어 실용화되고 있는 실증이다. 이 논문에서는 전력용 변압기의 국부적 고온인 경우의 가열온도, 가열시간 및 방전에 대하여 수소가스 주도형 센서의 응답특성에 관하여 고찰하였다.

• Transactions of the Korean hydrogen and new energy society
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• v.25 no.1
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• pp.59-71
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• 2014

An experimental study has been conducted to investigate the heat transfer characteristics of laminar syngas/air mixture with 10% hydrogen content impinging normally to a flat plate of cylinder. Effects of impinging distance, Reynolds number and equivalence ratio as major parameters on heat fluxes of stagnation point and radial direction were examined experimentally by the direct photos and data acquisitions from heat flux sensor. In this work, we could find the incurved flame behavior of line shaped inner top-flame in very closed distance between flat plate and burner exit, which has been not reported from general gas-fuels. There were 3 times of maximum and 2 times minimum heat flux of stagnation point with respect to the impinging distance for the investigation of Reynolds number and equivalence ratio effect. It was confirmed that the maximum heat flux of stagnation point in 1'st and 2'nd peaks increased with the increase of the Reynolds number due to the Nusselt number increment. There was a third maximum rise in the heat flux of stagnation point for larger separation distances and this phenomenon was different each for laminar and turbulent condition. The heat transfer characteristics between the stagnation and wall jet region in radial heat flux profiles was investigated by the averaged heat flux value. It has been observed that the values of averaged heat flux traced well with the characteristics of major parameters and the decreasing of averaged heat flux was coincided with the decreasing trend of adiabatic temperature in spite of the same flow condition, especially for impinging distance and equivalence ratio effects.

• Journal of Sensor Science and Technology
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• v.9 no.6
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• pp.430-439
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• 2000

$In_2O_3$-based thin film sensor with 500-600 nm thick was fabricated for the detection of CO gas by rf magnetron sputtering. In order to improve both sensitivity to CO gas and selectivity to hydrogen gas containing -CH, ultra-thin transition metal Co catalyst was sputtered over $In_2O_3$ thin film and annealed at $500^{\circ}C$. Sensitivity to CO was maximum at the thickness of Co 2.1 nm and $300^{\circ}C$, and that to $C_3H_8$ was at the thickness of Co 1.4 nm and $350-400^{\circ}C$. From the x-ray photoelectron spectroscopy (XPS) result, ultra-thin Co was existed into CoO covered with $Co_2O_3$ on $In_2O_3$ particles, and thus p-n junction of $In_2O_3(n-type)$-CoO(p-type) was thought to be formed. In this p-n junction type sensors, sensing mechanism with reducing gases can be explained by the variation of depletion layer thickness formed in the interface.

• Journal of Sensor Science and Technology
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• v.33 no.1
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• pp.40-47
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• 2024

The creation of vertically aligned one-dimensional (1D) nanostructures through the decoration of n-type tin oxide (SnO₂) on p-type chromium oxide (Cr₂O₃) constitutes an effective strategy for enhancing gas sensing performance. These heterostructures are deposited in multiple stages using a glancing angle deposition technique with an electron beam evaporator, resulting in a reduction in the surface porosity of the nanorods as SnO₂ is incorporated. In comparison to Cr₂O₃ films, the bare Cr₂O₃ nanorods exhibits a response 3.3 times greater to 50 ppm H₂S at 300℃, while the SnO₂-decorated Cr₂O₃ nanorods demonstrate an eleven-fold increase in response. Furthermore, when subjected to various gases (CH₄, H₂S, CO₂, H₂), a notable selectivity toward H₂S is observed. This study paves the way for the development of p-type semiconductor sensors with heightened selectivity and sensitivity towards H₂S, thus advancing the prospects of gas sensor technology.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.222-222
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• 2012

Metal oxide gas sensors based on semiconductor type have attracted a great deal of attention due to their low cost, flexible production and simple usability. However, most works have been focused on n-type oxides, while the characteristics of p-type oxide gas sensors have been barely studied. An investigation on p-type oxides is very important in that the use of them makes possible the novel sensors such as p-n diode and tandem devices. Monoclinic cupric oxide (CuO) is p-type semiconductor with narrow band gap (~1.2 eV). This is composed of abundant, nontoxic elements on earth, and thus low-cost, environment-friendly devices can be realized. However, gas sensing properties of neat CuO were rarely explored and the mechanism still remains unclear. In this work, the neat CuO layers with highly ordered mesoporous structures were prepared by a template-free, one-pot solution-based method using novel ink solutions, formulated with copper formate tetrahydrate, hexylamine and ethyl cellulose. The shear viscosity of the formulated solutions was 5.79 Pa s at a shear rate of 1 s-1. The solutions were coated on SiO2/Si substrates by spin-coating (ink) and calcined for 1 h at the temperature of $200{\sim}600^{\circ}C$ in air. The surface and cross-sectional morphologies of the formed CuO layers were observed by a focused ion beam scanning electron microscopy (FIB-SEM) and porosity was determined by image analysis using simple computer-programming. XRD analysis showed phase evolutions of the layers, depending on the calcination temperature, and thermal decompositions of the neat precursor and the formulated ink were investigated by TGA and DSC. As a result, the formation of the porous structures was attributed to the vaporization of ethyl cellulose contained in the solutions. Mesoporous CuO, formed with the ink solution, consisted of grains and pores with nano-meter size. All of them were strongly dependent on calcination temperature. Sensing properties toward H2 and C2H5OH gases were examined as a function of operating temperature. High and fast responses toward H2 and C2H5OH gases were discussed in terms of crystallinity, nonstoichiometry and morphological factors such as porosity, grain size and surface-to-volume ratio. To our knowledge, the responses toward H2 and C2H5OH gases of these CuO gas sensors are comparable to previously reported values.

• Korean Journal of Environmental Agriculture
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• v.24 no.4
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• pp.386-390
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• 2005

This study was conducted to develop the biofilter fur reducing ammonia $(NH_3)$ and hydrogen sulfide $(H_2S)$ gas emission from a pig house. A biofilter was designed and constructed by a type of squeeze air into the column type of air flow upward. Its column size was ${\Phi}260{\times}360mm$. It was used pressure drop gauge, turbo blower, air temperature, velocity sensor and control program that was programed by LabWindows CVI 5.5. Mixing materials were consisted with composted pine tree bark and perlite with 7:3 ratio (volume). The biofilter media inoculated with ammonia (Rhodococcus equi A3) and hydrogen sulfide (Alcaligenes sp. S5-5.2) oxidizing microorganisms was installed in a commercial pig house to analyzed the effectiveness of biogas removal for 10 days. Removal rates of ammonia and hydrogen sulfide gases were 90.8% and 81.5%, respectively. This result suggests that the pine compost-perlite mixture biofilter is effective and economic for reducing ammonia ana hydrogen sulfide gases.

• Korean Chemical Engineering Research
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• v.48 no.2
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• pp.218-223
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• 2010

The zinc oxide thin film, which can be applied as the gas sensor of a semiconductor type, was grown on the silicon substrate by CFR(continuous flow reaction) method in this study. The growth property and the electrical property of the zinc oxide thin films synthesized by CFR method were also investigated. Zinc acetate solutions of 0.005~0.02 M were used as the precursor for the preparation of zinc oxide thin films. The size of ZnO particles consisted on the zinc oxide thin film increased not only with increasing concentration of precursor, but also the thickness of thin film increased. The growth rate of zinc oxide thin film by CFR method was proportionably depend on the concentration of precursor and the uniform ZnO thin film was prepared when zinc acetate of 0.01 M is used as the precursor. The charged currents on the zinc oxide thin films were obtained as its electrical property by I-V meter, and increased agree with increasing the thickness of zinc oxide thin film. Thus, it was concluded that the charged current on the zinc oxide thin film can be controlled with changing concentration of precursor solution in CFR method. The charged currents on the zinc oxide thin films also decreased when ZnO thin film is exposed under hydrogen sulfide of 500 ppmv at $300^{\circ}C$ for 5 min. From these results, it could be confirmed that the zinc oxide thin film prepared by CFR method can be used for the detection of sulfur compounds.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.173-181
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• 1992

Tantalum pentoxide($Ta_{2}O_{5}$) thin films on p-type (100) silicon wafer were fabricated by RF reactive sputtering. Physical properties and structure of the specimens were examined by XRD and AES. From the C-V analysis, the dielectric constant of $Ta_{2}O_{5}$ films was in the range of 10-12 in the reactive gas atmosphere in which 10% of oxygen gas is mixed. The ratio of Ta : 0 was 1 : 2 and 1 : 2.49 by AES and RBS examination, respectively. The heat-treatment at $700^{\circ}C$ in $O_{2}$ ambient led to induce crystallization. When the heat-treatment temperature was $1000^{\circ}C$, the dielectric constant was 20.5 in $O_{2}$ ambient and 23 in $N_{2}$ ambient, respectively. The crystal structure of $Ta_{2}O_{5}$ film was pseudo hexagonal of ${\delta}-Ta_{2}O_{5}$. The flat band voltage shift(${\Delta}V_{FB}$) of the specimens and the leakage current density were decreased for higher oxygen mixing ratio. The maximum breakdown field was 2.4MV/cm at the oxygen mixing ratio of 10%. The $Ta_{2}O_{5}$ films will be applicable to hydrogen ion sensitive film and gate oxide material for memory device.