• Transactions of the Korean hydrogen and new energy society
• /
• v.17 no.2
• /
• pp.234-240
• /
• 2006

Al film(135.5 nm thick) with Pd film(39.6 nm thick) on the top of it was made by thermal evaporation method. Hydrogen absorption of Al/Pd film was measured by quartz crystal microbalance(QCM) method at room temperature. The sample was activated by hydrogen absorption and desorption cycling at room temperature. Hydrogen was introduced into the film by increasing hydrogen gas pressure step by step up to 640 torr at room temperature. Hydrogen concentration reached up to 25% at $5{\sim}10$ torr. But at high pressure the concentration decreased. This strange tendency was not understood yet. Further study is needed to find out the mechanism of hydrogen absorption in Al in Al/Pd film.

• Transactions of the Korean hydrogen and new energy society
• /
• v.18 no.3
• /
• pp.334-341
• /
• 2007

Al film(135.5 nm thick) with Pd film(39.6 nm thick) was made by thermal evaporation method. Electrical resistance change by hydrogen absorption and desorption was measured with four point measurement method. Even though Al film(135.5 nm thick) did not absorb any hydrogen at room temperature, Al/Pd film absorbed hydrogen at upto 640 torr pressure. Hydrogen absorption kinetics was monitored by measuring resistance change of the sample in the temperature range from $25^{\circ}C$ to $40^{\circ}C$. Absorption activation energy of Al/Pd film was about 10.7 and 17.7 kcal/mol H for 1st stage and last stage respectively at 1 torr hydrogen pressure. This activation values are bigger than that of Pd film, but are much less than that of Al film. This result indicates there is possibility that Al can be storage material for hydrogen by using Pd film evaporation on it.

• Transactions of the Korean hydrogen and new energy society
• /
• v.16 no.4
• /
• pp.386-390
• /
• 2005

Al film(135.5 nm thick) with Pd film(39.6 nm thick) on the top of it was made by thermal evaporation method. Electrical resistance change due to hydrogen absorption and desorption was measured by four point measurement method. The sample was activated by hydrogen absorption and desorption cycling at room temp. Hydrogen was introduced into the film by increasing hydrogen gas pressure step by step up to 640 torr at room temp. The resistance change ratio was decreased to 12 % with increasing hydrogen pressure in contrast to normal metal behavior. This strange tendency was not understood yet. Further study is needed to find out the mechanism of hydrogen absorption in Al in Al/Pd film.

• Transactions of the Korean hydrogen and new energy society
• /
• v.12 no.4
• /
• pp.287-292
• /
• 2001

The optical transmittance change of Pd thin film due to hydrogen absorption and desorption was examined at room temperature. Hydrogen absorption and desorption cycling effects on optical transmittance were measured 6 times in the pressure range between 0 and 640 torr. Optical transmittance of Pd film was increasing with increasing hydrogen pressure. Ratio of optical transmittance to the change of pressure at $\beta$ phase is bigger than that of low hydrogen pressure range.

• Korean Journal of Materials Research
• /
• v.29 no.5
• /
• pp.297-303
• /
• 2019

A triple-layered $PMMA/Ni_{64}Zr_{36}/PDMS$ hydrogen gas sensor using hydrogen permeable alloy and flexible polymer layers is fabricated through spin coating and DC-magnetron sputtering. PDMS(polydimethylsiloxane) is used as a flexible substrate and PMMA(polymethylmethacrylate) thin film is deposited onto the $Ni_{64}Zr_{36}$ alloy layer to give a high hydrogen-selectivity to the sensor. The measured hydrogen sensing ability and response time of the fabricated sensor at high hydrogen concentration of 99.9 % show a 20 % change in electrical resistance, which is superior to conventional Pd-based hydrogen sensors, which are difficult to use in high hydrogen concentration environments. At a hydrogen concentration of 5 %, the resistance of electricity is about 1.4 %, which is an electrical resistance similar to that of the $Pd_{77}Ag_{23}$ sensor. Despite using low cost $Ni_{64}Zr_{36}$ alloy as the main sensing element, performance similar to that of existing Pd sensors is obtained in a highly concentrated hydrogen atmosphere. By improving the sensitivity of the hydrogen detection through optimization including of the thickness of each layer and the composition of Ni-Zr alloy thin film, the proposed Ni-Zr-based hydrogen sensor can replace Pd-based hydrogen sensors.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1999.06a
• /
• pp.337-350
• /
• 1999

Thick diamond film having ~700${\mu}{\textrm}{m}$ thickness was deposited on polycrystalline molybdenum (Mo) substrate using high power (4kW) microwave plasma enhanced chemical vapor deposition (MPECVD) system. We could achieve free-standing diamond film via detaching as-deposited diamond film from the substrate by rapid cooling them under vacuum. We investigated the variation of photoconductivity after exposing the film surface to either oxygen or hydrogen plasma. At as-grown state, the growth side (the as-grown surface of the film) showed noticeable photoconductivity. The oxygen plasma treatment of this side led to the insulator. After exposing the film surface to hydrogen plasma, on the other hand, we could observe the reappearing of photoconductivity at the growth side. Based on these results, we suggest that the hydrogen plasma treatment may enhance the photoconductivity of free-standing diamond film.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.9 no.4
• /
• pp.441-445
• /
• 1999

Thick diamond film having $~700\mu\textrm{m}$ thickness was deposited on polycrystalline molybdenum(Mo) substrate using high power (4 kW) microwave plasma-enhanced chemical vapor depostion (MPECVD) system. We could achieve free-standing diamond film via detaching as-deposited diamond film from the substrate by rapid cooling them under vacuum. We investigated the variation of photoconductivity after exposing the film surface to either oxygen or hydrogen plasma. At as-grown state, the growth side (the as-grown surface of the film) showed noticeable photoconcuctivity. The oxygen plasma treatment of this side led to the insulator. After exposing the film surface to hydrogen plasma, on the other hand, we could observe the reappearing of photoconductivity at the growth side. Based on these results, we suggest that the hydrogen plasma treatment may enhance the photoconductivity of free-standing diamond film.

• Transactions of the Korean hydrogen and new energy society
• /
• v.12 no.3
• /
• pp.201-209
• /
• 2001

The change of optical transmittance of $PdH_x$ thin film due to hydrogen concentration change was measured at room temperature. Pd film($312{\AA}$ thick) was made by thermal evaporation on glass substrate. Hydrogen absorption and desorption cycling effect on optical transmittance was measured 4 times in the pressure range between 0 and 640 torr. Ratio of optical transmittance to the change of ln pressure(torr) increases with increasing number of hydrogen A-D cyclings in the ${\beta}$ phase.

• Bulletin of the Korean Chemical Society
• /
• v.34 no.7
• /
• pp.2067-2072
• /
• 2013

Hydrogen ($H_2$) treatment using a two-step $TiO_2$ nanotube (TONT) film was performed under various annealing temperatures from $350^{\circ}C$ to $550^{\circ}C$ and significantly influenced the extent of hydrogen treatment in the film. Compared with pure TONT films, the hydrogen-treated TONT (H:TONT) film showed substantial improvement of material features from structural, optical and electronic aspects. In particular, the extent of enhancement was remarkable with increasing annealing temperature. Light absorption by the H:TONT film extended toward the visible region, which was attributable to the formation of sub-band-gap states between the conduction and valence bands, resulting from oxygen vacancies due to the $H_2$ treatment. This increased donor concentration about 1.5 times higher and improved electrical conductivity of the TONT films. Based on these analyses and results, photoelectrochemical (PEC) performance was evaluated and showed that the H:TONT film prepared at $550^{\circ}C$ exhibited optimal PEC performance. Approximately twice higher photocurrent density of 0.967 $mA/cm^2$ at 0.32 V vs. NHE was achieved for the H:TONT film ($550^{\circ}C$) versus 0.43 $mA/cm^2$ for the pure TONT film. Moreover, the solar-to-hydrogen efficiency (STH, ${\eta}$) of the H:TONT film was 0.95%, whereas a 0.52% STH efficiency was acquired for the TONT film. These results demonstrate that hydrogen treatment of TONT film is a simple and effective tool to enhance PEC performance with modifying the properties of the original material.

• Korean Journal of Materials Research
• /
• v.12 no.1
• /
• pp.75-81
• /
• 2002

The ferroelectric properties of Pb(Zr,Ti)O$_3$[PZT] films degrade when the films with Pt top electrodes are annealed in hydrogen containing environment. This is due to the reduction activity of atomic hydrogen that is generated by the catalytic activity of the Pt top electrode. At the initial stage of hydrogen annealing, oxygen vacancies are formed by the reduction activity of hydrogen mainly at the vicinity of top Pt/PZT interface, resulting in a shift of P-E (polarization-electric field) hysteresis curve toward the negative electric field direction. As the hydrogen annealing time increases, oxygen vacancies are formed inside the PZT film by the inward diffusion of hydrogen ions, as a result, the polarization degrades significantly and the degree of P-E curve shift decreases gradually. The direction and the magnitude of the remnant polarization in the PZT film affect the motion of hydrogen ions which determines the degradation of polarization characteristics and the shift in the P-E hysteresis curve of the PZT capacitor during hydrogen annealing. When the remnant polarization is formed in the PZT film by applying a pre-poling voltage prior to hydrogen annealing, the direction of the P-E curve shift induced by hydrogen annealing is opposite to the polarity of the pre-poling voltage. The hydrogen-induced degradation behavior of the PZT capacitor is also affected by the internal field that has been generated in the PZT film by the charges located at the top interface prior to hydrogen annealing.