• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.276-279
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• 2004

Plasma enhanced chemical vapor deposition (PECVD) of silicon nitride (SiN) is a proven technique for obtaining layers that meet the needs of surface passivation and anti-reflection coating. In addition, the deposition process appears to provoke bulk passivation as well due to diffusion of atomic hydrogen. This bulk passivation is an important advantage of PECVD deposition when compared to the conventional CVD techniques. A further advantage of PECVD is that the process takes place at a relatively low temperature of 300t, keeping the total thermal budget of the cell processing to a minimum. In this work SiN deposition was performed using a horizontal PECVD reactor system consisting of a long horizontal quartz tube that was radiantly heated. Special and long rectangular graphite plates served as both the electrodes to establish the plasma and holders of the wafers. The electrode configuration was designed to provide a uniform plasma environment for each wafer and to ensure the film uniformity. These horizontally oriented graphite electrodes were stacked parallel to one another, side by side, with alternating plates serving as power and ground electrodes for the RF power supply. The plasma was formed in the space between each pair of plates. Also this paper deals with the fabrication of multicrystalline silicon solar cells with PECVD SiN layers combined with high-throughput screen printing and RTP firing. Using this sequence we were able to obtain solar cells with an efficiency of 14% for polished multi crystalline Si wafers of size 125 m square.

• Membrane Journal
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• v.29 no.1
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• pp.30-36
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• 2019

In this study, we reported a solid-state supercapacitor consisting of titanium nitride (TiN) nanofiber and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT-PSS) conducting polymer electrode and poly(vinyl alcohol) (PVA)-based polymer electrolyte membrane. The TiN nanofiber was selected as electrode materials due to high electron conductivity and 2-dimensional structure which is beneficial for scaffold effect. PEDOT-PSS is suitable for organic/inorganic composites due to good redox reaction with hydrogen ions in electrolyte and good dispersion in solution. By synergetic effect of TiN nanofiber and PEDOT-PSS, the PEDOT-PSS/TiN electrode showed higher surface area than the flat Ti foil substrate. The PVA-based polymer electrolyte membrane could prevent leakage and explosion problem of conventional liquid electrolyte and possess high specific capacitance due to the fast ion diffusion of small $H^+$ ions. The specific capacitance of PEDOT-PSS/TiN supercapacitor reached 75 F/g, which was much higher than that of conventional carbon-based supercapacitors.

• Environmental Sciences Bulletin of The Korean Environmental Sciences Society
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• v.2 no.2
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• pp.169-179
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• 1998

This paper was performed to estimate interrelations between humus level of sediments and nutrient release from sediments in Dae-cheong reservoir. For investigations, sediments were sampled in June and October, in 1997 at fish farms, embayment, and the main stream of Dae-cheong reservoir. Items for investigation are as follows; water content, weight loss on ignition(IG), porosities of sediments, contents of element such as hydrogen, nitrogen, carbon, and nutrient release rates. Water contents and porosities were measured to conjecture the physical trait and grain size trait. Weight loss on ignition was measured to determine the contents of organic substance. For determination of the humus level of sediments, carbon and nitrogen contents were measured by elemental analyzer. As a result of elemental analysis, C/N ratio was determined in the range of $3.0\~13.1$. From the elemental analysis, humus level of Dae-cheong reservoir sediment was estimated from mesohumic state to oligotrophic state. For the determination of nutrient release rate, $PO_4-P$ and $NH_4-N$ concentrations of interstitial water and overlying water were measured. By using the concentration difference between interstitial water and overlying water and using the Fick's diffusion law, the release rates of phosphorus and nitrogen from the sediment samples were calculated. Release rates of nutrients which directly influence to the water quality were $0.05\~8.63mgP/m^2day$ and $4.99\~36.56mgP/m^2day$. It was found that release rate was measured higher in the 1st sampling period than in the 2nd sampling period. For the determination of phosphorus content in sediment, TPs were measured in 807\~1542{\mu}g/g$ in the 1st samling period and $677\~5238{\mu}g/g$ in the End samling period. Phosphorus release rate and phosphorus content were not interrelated each other.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.39 no.9
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• pp.909-916
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• 2015

In this study, to investigate the effect of spray behavior characteristics, we induce the mixing ratio of emulsified fuel using impinging spray. We formulate the emulsified fuel by mixing diesel and hydrogen peroxide($H_2O_2$). We set the temperature of the heating plate to $150^{\circ}C$, $200^{\circ}C$, and $250^{\circ}C$, and set the injection pressures to 400, 600, 800, and 1000bar. The surfactants for the emulsified fuel mixture, which were mixed span80 and tween80 was mixed as 9:1, were fixed to 3% of the total volume of the emulsified fuel. We set the mixing ratio of $H_2O_2$ in the emulsified fuel as emulsified fuel(EF)0, EF2, EF12, and EF22. Further, we visualize the evaporation impinging spray using the Schlieren method. Based on the results of this study, we found that a higher temperature and injection pressure of the heating plate impingement led to the active diffusion of the fuel vapor, which promoted emulsified fuel evaporation. When the emulsified fuel is utilized in an actual engine, because of the temperature-drop effect of the combustion chamber, which is due to the evaporation of $H_2O_2$ in fuel and faster mixture formation is expected to decrease the engine emissions.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.77-77
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• 2016

Thin films synthesized by plasma processes have been widely applied in a variety of industrial sectors. The structure control of thin film is one of prime factor in most of these applications. It is well known that the structure of this film is closely associated with plasma parameters and species of plasma which are electrons, ions, radical and neutrals in plasma processes. However the precise control of structure by plasma process is still limited due to inherent complexity, reproducibility and control problems in practical implementation of plasma processing. Therefore the study on the fundamental physical properties that govern the plasmas becomes more crucial for molecular scale control of film structure and corresponding properties for new generation nano scale film materials development and application. The thin films are formed through nucleation and growth stages during thin film depostion. Such stages involve adsorption, surface diffusion, chemical binding and other atomic processes at surfaces. This requires identification, determination and quantification of the surface activity of the species in the plasma. Specifically, the ions and neutrals have kinetic energies ranging from ~ thermal up to tens of eV, which are generated by electron impact of the polyatomic precursor, gas phase reaction, and interactions with the substrate and reactor walls. The present work highlights these aspects for the controlled and low-temperature plasma enhanced chemical vapour disposition (PECVD) of Si-based films like crystalline Si (c-Si), Si-quantum dot, and sputtered crystalline C by the design and control of radicals, plasmas and the deposition energy. Additionally, there is growing demand on the low-temperature deposition process with low hydrogen content by PECVD. The deposition temperature can be reduced significantly by utilizing alternative plasma concepts to lower the reaction activation energy. Evolution in this area continues and has recently produced solutions by increasing the plasma excitation frequency from radio frequency to ultra high frequency (UHF) and in the range of microwave. In this sense, the necessity of dedicated experimental studies, diagnostics and computer modelling of process plasmas to quantify the effect of the unique chemistry and structure of the growing film by radical and plasma control is realized. Different low-temperature PECVD processes using RF, UHF, and RF/UHF hybrid plasmas along with magnetron sputtering plasmas are investigated using numerous diagnostics and film analysis tools. The broad outlook of this work also outlines some of the 'Grand Scientific Challenges' to which significant contributions from plasma nanoscience-related research can be foreseen.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.5
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• pp.224-230
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• 2001

The characteristics of $NO/N_2O$ annealed reoxidized nitrided oxide being studied as super thin gate oxide and gate dielectric layers of Non-Volatile Semiconductor Memory (NVSM) were investigated by Dynamic Secondary Ion Mass Spectrometry (D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS), and Auger Electron Spectroscopy (AES). The specimen was annealed by $NO/N_2O$ after initial oxide process and then rcoxidized for nitrogen redistribution in nitrided oxide. Out-diffusion of incorporated nitrogen during the wet oxidation in reoxidation process took place more strongly than that of the dry oxidation. It seems to indicate that hydrogen plays a role in breaking the Si N bonds. As reoxidation proceeds, incorporated nitrogen of $NO/N_2O$ annealed nitrided oxide is obsen-ed to diffuse toward the surface and substrate at the same time. ToF-SIMS results show that SiON species are detected at the initialoxide interface, and Si,NO species near the new $Si_2NO$ interface that formed after reoxidation. These SiON and $Si_2NO$ species most likely to relate to the origin of the state of memory charge traps in reoxidized nitrided oxide, because nitrogen dangling bonds of SiON and silicon dangling bonds of $Si_2NO$ are contained defects associated with memory effect.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.399-399
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• 2013

Metal silicides는 Si 기반의microelectronic devices의 interconnect와 contact 물질 등에 사용하기 위하여 그 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 이 중 Rare-earth(RE) silicides는 저온에서 silicides를 형성하고, n-type Si과 낮은 Schottky Barrier contact (~0.3 eV)을 이룬다. 또한 낮은 resistivity와 Si과의 작은 lattice mismatch, 그리고 epitaxial growth의 가능성, 높은 thermal stability 등의 장점을 갖고 있다. RE silicides 중 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 n-channel schottky barrier MOSFETs의 source/drain으로 주목받고 있다. 또한 Silicon 기반의 CMOSFETs의 성능 향상 한계로 인하여 germanium 기반의 소자에 대한 연구가 이루어져 왔다. Ge 기반 FETs 제작을 위해서는 낮은 source/drain series/contact resistances의 contact을 형성해야 한다. 본 연구에서는 저접촉 저항 contact material로서 ytterbium germanide의 가능성에 대해 고찰하고자 하였다. HRTEM과 EDS를 이용하여 ytterbium germanide의 미세구조 분석과 면저항 및 Schottky Barrier Heights 등의 전기적 특성 분석을 진행하였다. Low doped n-type Ge (100) wafer를 1%의 hydrofluoric (HF) acid solution에 세정하여 native oxide layer를 제거하고, 고진공에서 RF sputtering 법을 이용하여 ytterbium 30 nm를 먼저 증착하고, 그 위에 ytterbium의 oxidation을 방지하기 위한 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, rapid thermal anneal (RTA)을 이용하여 N2 분위기에서 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium germanides를 형성하였다. Ytterbium germanide의 미세구조 분석은 transmission electron microscopy (JEM-2100F)을 이용하였다. 면 저항 측정을 위해 sulfuric acid와 hydrogen peroxide solution (H2SO4:H2O2=6:1)에서 strip을 진행하여 TiN과 unreacted Yb을 제거하였고, 4-point probe를 통하여 측정하였다. Yb germanides의 면저항은 열처리 온도 증가에 따라 감소하다 증가하는 경향을 보이고, $400{\sim}500^{\circ}C$에서 가장 작은 면저항을 나타내었다. HRTEM 분석 결과, deposition 과정에서 Yb과 Si의 intermixing이 일어나 amorphous layer가 존재하였고, 열처리 온도가 증가하면서 diffusion이 더 활발히 일어나 amorphous layer의 두께가 증가하였다. $350^{\circ}C$ 열처리 샘플에서 germanide/Ge interface에서 epitaxial 구조의 crystalline Yb germanide가 형성되었고, EDS 측정 및 diffraction pattern을 통하여 안정상인 YbGe2-X phase임을 확인하였다. 이러한 epitaxial growth는 면저항의 감소를 가져왔으며, 열처리 온도가 증가하면서 epitaxial layer가 증가하다가 고온에서 polycrystalline 구조의 Yb germanide가 형성되어 면저항의 증가를 가져왔다. Schottky Barrier Heights 측정 결과 또한 면저항 경향과 동일하게 열처리 증가에 따라 감소하다가 고온에서 다시 증가하였다.

• Textile Coloration and Finishing
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• v.1 no.1
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• pp.19-25
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• 1989

In past, dye diffusion and dyeing rate in fibers have been emphasized in dyeing phenomena. However, in the light of the properties of colloids in the surface of disperse phase and dispersion, there exist specific characters such as adsorption or electric double layer, which seems to play important roles in determining the physiochemical properties in the dyeing system. Electrostatic bonding, hydrogen bonding and Van der Waals adsorption are common in dyeing as well as covalent bonding. Particularly, electrostatic bonding is premised on the existance of ionic radicals in fibers. The present study was aimed to clarify the electrokinetic phenomena of dyeing through the role of electric double layer by ion in amphoteric fibers with different ionic effects under different pH. Spectrophotometric analysis method was used to compare dyeing condition of surface, which can be detected by electrokinetic phenomena and the inner of fibers after deceleration of dyed fibers. Nylon and wool, the typical amphoteric fibers were dyed with monoazo acid dyes such as C.I. Acid Orange 20, and C.I. Acid Orange 10. Various combinations were prepared by combining pH, temperature and dye concentration, in order to generate streaming electric potential which were measured by microvolt meter and specific conductivity meter. The results were transformed to zeta potential by Helmholtz-Smoluchowski formular and to surface electric charge density by Suzawa formular, surface dye amount, and effective surface area of fibers. The amount of dyes of inner fibers were also measured by the Lambert-Beer’s law. The main results obtained are as follows. 1. By measuring zeta pontential, it was possible to detect the dyeing mechanism, surface charge density, surface dye amount and effective surface area concerning dye adsorption of the amphoteric fibers. 2. Zeta pontential increases in negative at low pH and high dye concentration in the process of dyeing. This implied that there existed ionic bond formation in the dyeing mechanism between acid dyes and amphoteric fibers. 3. Dibasic acid dye had little changing rate in zeta potential due to the difference in solubility of dye and in number of dissociated ions per dye molecule to bond with amino radicals of amphoteric fibers. The dye adsorption of mono basic acid dye was higher than that of dibasic acid dye. 4. The effective surface areas concerning dyeing were $6.3E+05\;cm^2/g$ in nylon, $1.6E+07\;cm^2/g$ in wool fiber being higher order of wool then nylon.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.5
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• pp.509-515
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• 2012

In this study, ${\gamma}-Al_2O_3$ nanoparticles were synthesized by using coflow hydrogen diffusion flames. The synthesis conditions were varied with using several oxygen concentrations in the oxidizing air. The particle characteristics of the flame-synthesized $Al_2O_3$ nanoparticles were determined by examining the crystalline structure, shape, and specific surface area of the nanoparticles. The measured maximum centerline temperature of the flames ranged from 1507.8 K to 1998.7 K. The morphology and crystal structure of the $Al_2O_3$ nanoparticles were determined from SEM images and XRD analyses, respectively. The particle sizes were calculated from measured BET specific surface areas and ranged from 25 nm to 52 nm. From XRD analyses, it was inferred that a large number of the synthesized nanoparticles were ${\gamma}-Al_2O_3$ nanoparticles including ${\theta}-Al_2O_3$ nanoparticles.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.84-84
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• 2012

소자가 고집적화 됨에 따라, 비저항이 낮고 electro migration (EM), Stress Migration (SM) 특성이 우수한 구리(Cu)를 배선재료로서 사용하고 있다. 그러나, 구리는 Si과 $SiO_2$의 내부로 확산이 빠르게 일어나, Si 소자 내부에 deep donor level을 형성하고, 누설 전류를 증가시키는 등 소자의 성능을 저하시킬 수 있는 문제점을 가지고 있다. 그러나, electroplating 을 이용하여 증착한 Cu 박막은 일반적으로 확산 방지막으로 쓰이는 TiN, TaN, 등의 물질과의 접착 (adhesion) 특성이 나쁘다. 따라서, Cu CMP 에서 증착된 Cu 박막의 벗겨지거나(peeling), EM or SM 저항성 저하 등의 배선에서의 reliability 문제를 야기하게된다. 따라서 Cu 와 접착 특성이 좋은 새로운 확산방지막 또는 adhesion layer의 필요성이 대두되고 있다. 본 연구에서는 이러한 Cu 배선에서의 접착성 문제를 해결하고자 Metal organic chemical vapor deposition (MOCVD)을 이용하여 제조한 코발트(Co) 박막을 $Cu/TaN_x$ 사이의 접착력 개선을 위한 adhesion layer로 적용하려는 시도를 하였다. Co는 비저항이 낮고, Cu 와 adhesion이 좋으며, Cu direct electroplating 이 가능하다는 장점을 가지고 있다. 하지만, 수소 분위기에서 $C_{12}H_{10}O_6(Co)_2$ (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) 전구체에 의한 MOCVD Co 박막의 경우 탄소, 산소와 같은 불순물이 다량 함유되어 있어, 비저항, surface roughness 가 높아지게 된다. 따라서 구리 전착 초기에 구리의 핵 생성(nucleation)을 저해하고 핵 생성 후에도 응집(agglomeration)이 발생하여 연속적이고 얇은 구리막 형성을 방해한다. 이를 해결하기 위해, MOCVD Co 박막 증착 시 수소 반응 가스에 암모니아를 추가로 주입하여, 수소/암모니아의 분압을 1:1, 1:6, 1:10으로 변화시켜 $Co/TaN_x$ 박막의 특성을 비교 분석하였다. 각각의 수소/암모니아 분압에 따른 $Co/TaN_x$ 박막을 TEM (Transmission electron microscopy), XRD (X-ray diffraction), AES (Auger electron spectroscopy)를 통해 물성 및 조성을 분석하였고, AFM (Atomic force microscopy)를 이용하여, surface roughness를 측정하였다. 실험 결과, $Co/TaN_x$ 박막은 수소/암모니아 분압 1:6에서 90 ${\mu}{\Omega}-cm$의 낮은 비저항과 0.97 nm 의 낮은 surface roughness 를 가졌다. 뿐만 아니라, MOCVD 에 의해 증착된 Co 박막이4-6 % concentration 의 탄소 및 산소 함량을 가지는 것으로 나타났고, 24nm 크기의 trench 기판 위에 약 6nm의 $Co/TaN_x$ 박막이 매우 균일하게 형성된 것을 확인 할 수 있었다. 이러한 결과들은, 향후 $Co/TaN_x$ 박막이 Cu direct electroplating 공정이 가능한 diffusion barrier로서 성공적으로 사용될 수 있음을 보여준다.