• Nuclear Engineering and Technology
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• v.47 no.3
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• pp.267-283
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• 2015

The main objective of this study is to investigate experimentally the two-phase flow characteristics in terms of the direct contact condensation of a steam-water stratified flow in a horizontal rectangular channel. Experiments were performed for both air-water and steam-water flows with a cocurrent flow configuration. This work presents the local temperature and velocity distributions in a water layer as well as the interfacial characteristics of both condensing and noncondensing fluid flows. The gas superficial velocity varied from 1.2 m/s to 2.0 m/s for air and from 1.2 m/s to 2.8 m/s for steam under a fixed inlet water superficial velocity of 0.025 m/s. Some advanced measurement methods have been applied to measure the local characteristics of the water layer thickness, temperature, and velocity fields in a horizontal stratified flow. The instantaneous velocity and temperature fields inside the water layer were measured using laser-induced fluorescence and particle image velocimetry, respectively. In addition, the water layer thickness was measured through an ultrasonic method.

• Transactions of the Korean Society of Mechanical Engineers
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• v.18 no.1
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• pp.175-183
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• 1994

To investigate thermophoretic effect on particle deposition, average deposition velocity toward a horizontal wafer surface in vertical airflow is measured keeping the wafer surface temperature different from the surrounding air temperature. In the present measurement, the temperature difference is maintained in the range from -10 to $4^{\circ}$ C Polystyrene latex (PSL) spheres of diameter between 0.3 and 0.8 .mu.m are used for the experiment. The number of particles deposited on a wafer surface is estimated from the measurements using a wafer surface scanner (PMS SAS-3600). Experimental data are compared with prediction model results.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.21 no.10
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• pp.1284-1293
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• 1997

The electrostatic effect on particle deposition onto a heated, Horizontal free-standing wafer surface was investigated numerically. The deposition mechanisms considered were convection, Brownian and turbulent diffusion, sedimentation, thermophoresis and electrostatic force. The electric charge on particle needed to calculate the electrostatic migration velocity induced by the local electric field was assumed to be the Boltzmann equilibrium charge. The electrostatic forces acted upon the particle included the Coulombic, image, dielectrophoretic and dipole-dipole forces based on the assumption that the particle and wafer surface are conducting. The electric potential distribution needed to calculate the local electric field around the wafer was calculated from the Laplace equation. The averaged and local deposition velocities were obtained for a temperature difference of 0-10 K and an applied voltage of 0-1000 v.The numerical results were then compared with those of the present suggested approximate model and the available experimental data. The comparison showed relatively good agreement between them.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.5 no.2
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• pp.130-140
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• 1993

Average particle deposition velocity toward a horizontal semiconductor wafer in vertical airflow is measured by a wafer surface scanner(PMS SAS-3600). Use of wafer surface scanner requires very short exposure time normally ranging from 10 to 30 minutes, and hence makes repetition of experiment much easier. Polystyrene latex (PSL) spheres of diameter between 0.2 and $1.0{\mu}m$ are used. The present range of particle sizes is very important in controlling particle deposition on a wafer surface in industrial applications. For the present experiment, convection, diffusion, and sedimentation comprise important agents for deposition mechanisms. To investigate confidence interval of experimental data, mean and standard deviation of average deposition velocities are obtained from more than ten data set for each PSL sphere size. It is found that the distribution of mean of average deposition velocities from the measurement agrees well with the predictions of Liu and Ahn(1987) and Emi et al.(1989).

• Particle and aerosol research
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• v.14 no.2
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• pp.41-47
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• 2018

Numerical analysis was conducted to characterize particle deposition onto a heated horizontal semiconductor wafer in vacuum environment. In order to calculate the properties of gas surrounding the wafer, the gas was assumed to obey the ideal gas law. Particle transport mechanisms considered in the present study were convection, Brownian diffusion, gravitational settling and thermophoresis. Averaged particle deposition velocities on the upper surface of the wafer were calculated with respect to particle size, based on the numerical results from the particle concentration equation in the Eulerian frame of reference. The deposition velocities were obtained for system pressures of 1000 Pa~1 atm, wafer heating of 0~5 K and particle sizes of $2{\sim}10^4nm$. The present numerical results showed good agreement with the available experimental ones.

• Transactions of the Korean Society of Mechanical Engineers
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• v.15 no.1
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• pp.252-261
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• 1991

A particle trajectory model to simulate two-phase particle-laden crossjets into two-dimensional horizontal free stream has been developed to study the variations of the jet trajectories and velocity variations of the gaseous and the particulate phases. The following conclusions may be drawn from the predicted results, which are in agreement with experimental observations. The penetration of the two-phase jet in a crossflow is greater than that of the single-phase jet. The penetration of particles into the free stream increases with increasing particle size, solids-gas loading ratio and carrier gas to free stream velocity ratio at the jet exit. When the particle size is large, the solid particles separate from the carrier gas , while the particles are completely suspended in the carrier gas for the case of small size particles. As the particle to carrier gas velocity ratio at the jet exit is less than unity, the particles in the vicinity of the jet exit are accelerated by the carrier gas. As the injection angle is increased, the difference of the particle trajectory from that of the pure gas becomes larger. Therefore, it can be concluded that the velocities and trajectories of the particle-laden jets in a crossflow change depending on the solids-gas loading ratio, particle size, carrier gas to free stream velocity ratio and particle to gas velocity ratio at the jet exit.

• Transactions of the Korean Society of Mechanical Engineers
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• v.17 no.9
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• pp.2315-2328
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• 1993

The turbulence effect of particle deposition on a horizontal free-standing wafer in a vertical flow has been studied numerically by using the low-Reynolds-number k-.epsilon. turbulence model. For both the upper and lower surfaces of the wafer, predictions are made of the averaged particle deposition velocity and its radial distribution. Thus, it is now possible to obtain local information about the particle deposition on a free-standing wafer. The present result indicates that the particle deposition velocity on the lower surface of wafer is comparable to that on the upper one in the diffusion controlled deposition region in which the particle sizes are smaller than $0.1{\mu}m$. And it is found in this region that, compared to the laminar flow case, the averaged deposition velocity under the turbulent flow is about two times higher, and also that the local deposition velocity at the center of wafer is high equivalent to that the wafer edge.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.26 no.12
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• pp.1715-1721
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• 2002

Numerical analysis was conducted to characterize the gas flow field and particle deposition on a horizontal freestanding semiconductor wafer under the laminar flow field at vacuum environment. In order to calculate the properties of gas, the gas was assumed to obey the ideal gas law. The particle transport mechanisms considered were convection, Brownian diffusion and gravitational settling. The averaged particle deposition velocities and their radial distributions fnr the upper surface of the wafer were calculated from the particle concentration equation in an Eulerian frame of reference for system pressures of 1 mbar~1 atm and particle sizes of 2nm~10$^4$ nm(10 ${\mu}{\textrm}{m}$). It was observed that as the system pressure decreases, the boundary layer of gas flow becomes thicker and the deposition velocities are increased over the whole range of particle size. One thing to be noted here is that the deposition velocities are increased in the diffusion dominant particle size range with decreasing system pressure, whereas the thickness of the boundary layer is larger. This contradiction is attributed to the increase of particle mechanical mobility and the consequent increase of Brownian diffusion with decreasing the system pressure. The present numerical results showed good agreement with the results of the approximate model and the available experimental data.

• Journal of Advanced Marine Engineering and Technology
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• v.39 no.2
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• pp.136-142
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• 2015

The shell and tube heat exchanger is an essential part of a power plant for recovering transfer heat between the feed water of a boiler and the wasted heat. The baffles are also an important element inside the heat exchanger. Internal materials influence the flow pattern in the bed. The influence of baffles in the velocity profiles was observed using a three-dimensional PIV (Particle Image Velocimetry) around baffles in a horizontal circular tube. The velocity of the particles was measured before the baffle and between them in the test tube. Results show that the velocity vectors near the front baffle flow along the vertical wall, and then concentrate on the upper opening of the front baffle. The velocity profiles circulate in the front and rear baffle. These profiles are related to the Reynolds number (Re) or the flow intensity. Velocity profiles at lower Re number showed complicated mixing to obtain the velocities and concentrate on the lower opening of the rear baffle as front wall. Numerical simulations were performed to investigate the effects of the baffle and obtain the velocity profiles between the two baffles. In this study, a commercial CFD package, Fluent 6.3.21 with the turbulent flow modeling, k-${\epsilon}$ are adopted. The path line and local axial velocities are calculated between two baffles using this program.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.26 no.2
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• pp.245-252
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• 2002

Numerical analysis was conducted to characterize particle deposition on a horizontal rotating disk with thermophorectic effect under laminar flow field. The particle transport mechanisms considered were convection, Brownian diffusion, gravitational settling and thermophoresis. The averaged particle deposition velocities and their radial distributions for the upper surface of the disk were calculated from the particle concentration equation in a Eulerian frame of reference for rotating speeds of 0∼1000rpm and temperature differences of 0∼5K. It was observed from the numerical results that the rotation effect of disk increased the averaged deposition velocities, and enhanced the uniformity of local deposition velocities on the upper surface compared with those of the disk at rest. It was also shown that the heating of the disk with ΔT=5K decreased deposition velocity over a fairly broad range of particle sizes. Finally, an approximate deposition velocity model for the rotating disk was suggested. The comparison of the present numerical results with the results of the approximate model and the available experimental results showed relatively good agreement between them.