• Journal of the Korean Society of Safety
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• v.9 no.3
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• pp.53-59
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• 1994

Hydrogen(H$_2$) is used in the semiconductor industries, and some oxidizing gases such as fluoride(F$_2$) and chlorine trifluoride(CIF$_3$) are also used. As F$_2$and CIF$_3$are highly oxidizing gases, it were supposed to react vigorously with H$_2$. In this study, the flammability limit of F$_2$/$H_2$/Ar and CIF$_3$/$H_2$/Ar mixtures were investigated experimentally. As a result, it was found that the diluted F$_2$gas could be spontaneously ignited as compared to CIF$_3$mixture gas while being mixed with the diluted H$_2$gas. However, CIF$_3$diluted gas was not able to ignite spontaneously except for an electric spark. And the combustion characteristics and reaction kinetics were shown at the different diluted gases by the flammability diagram analyses between the F$_2$/$H_2$/Ar and CIF$_3$/$H_2$/Ar.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.16.1-16.1
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• 2011

Gas sensor properties of $WO_3$ nanowire structures have been studied. The sensing layer was prepared by deposition of tungsten metal on porous single wall carbon nanotubes followed by thermal oxidation. The morphology and crystalline quality of $WO_3$ material was investigated by SEM, TEM, XRD and Raman analysis. A highly porous $WO_3$ nanowire structure with a mean diameter of 82 nm was obtained. Response to CO, $NH_3$ and $H_2$ gases diluted in air were investigated in the temperature range of $100{\sim}340^{\circ}C$ The sensor exhibited low response to CO gas and quite high response to $NH_3$ and $H_2$ gases. The highest sensitivity was observed at $250^{\circ}C$ for $NH_3$ and $300^{\circ}C$ for $H_2$. The effect of the diameters of $WO_3$ nanowires on the sensor performance was also studied. The $WO_3$ nanowires sensor with diameter of 40 nm showed quite high sensitivity, fast response and recovery times to $H_2$ diluted in dry air. The sensitivity as a function of detecting gas concentrations and gas sensing mechanism was discussed. The effect of dilution carrier gases, dry air and nitrogen, was examined.

• 한국연소학회:학술대회논문집
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• 2014.11a
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• pp.139-140
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• 2014

Stabilization characteristics of highly $N_2$-diluted $CH_4-O_2$ flame in an axially two-section porous inert medium were experimentally investigated for its application to the waste gas scrubber in semiconductor manufacturing processes. The flame behaviors were observed with respect to the fuel and $N_2$ flow rates and the equivalence ratios. As a result, four kinds of flame behaviors such as stable, flashback crossing the interface, blowout and sudden extinction were observed.

• 한국연소학회:학술대회논문집
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• 2013.06a
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• pp.45-46
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• 2013

Stabilization characteristics of highly $N_2$-diluted $CH_4-O_2$ flame in an axially two-section porous inert medium were experimentally investigated for its application to the waste gas scrubber in semiconductor manufacturing processes. The flame behaviors were observed with respect to the fuel and $N_2$ flow rates and the equivalence ratios. As a result, four kinds of flame behaviors such as stable, flashback crossing the interface, blowout and sudden extinction were observed. It was also found that there exists two flame regime divided by a critical fuel flow rate. In addition, the flame stability was discussed based on the $N_2$ index which means the abatement capacity of our combustor in scrubbing the waste gas from the semiconductor processes.

• Korean Journal of Metals and Materials
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• v.50 no.8
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• pp.613-618
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• 2012

We report on electrical and mechanical properties of silicon nitride ($SiN_x$) films deposited by a plasma enhanced chemical vapor deposition (PECVD) method at $200^{\circ}C$ from $SiH_4$ highly diluted in $N_2$. The films were also prepared from $SiH_4$ diluted in He for comparison. The $N_2$ dilution was also effective in improving adhesion of the $SiN_x$ films, fascilitating construction of thin film transistors (TFTs). Metal-insulator-semiconductor (MIS) and Metal-insulator-Metal (MIM) structures were used for capacitance-voltage (C-V) and current-voltage (I-V) measurements, respectively. The resistivity and breakdown field strength of the $SiN_x$ films from $N_2$-diluted $SiH_4$ were estimated to be $1{\times}10^{13}{\Omega}{\cdot}cm$, 7.4 MV/cm, respectively. The MIS device showed a hysteresis window and a flat band voltage shift of 3 V and 0.5 V, respectively. The TFTs fabricated by using these films showed a field-effect mobility of $0.16cm^2/Vs$, a threshold voltage of 3 V, a subthreshold slope of 1.2 V/dec, and an on/off ratio of > $10^6$.

• 한국연소학회:학술대회논문집
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• 2001.06a
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• pp.9-16
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• 2001

When large size nozzle with low jet velocity is used, the buoyancy effect arises from the density difference among propane, air, and burnt gas. Flame characteristics in such buoyant jets have been investigated numerically to elucidate the effect of buoyancy on lifted flames. It has been demonstrated that the cold jet has circular cone shape since upwardly injected propane jet decelerates and forms stagnation region. In contrast to the cold flow, the reacting flow with a lifted flame has no stagnation region by the buoyancy force induced from the burnt gas. To further illustrate the buoyancy effect on lifted flames, the reacting flow with buoyancy is compared with non-buoyant reacting flow. Non-buoyant flame is stabilized at much lower height than the buoyant flame. At a certain range of fuel jet velocities and fuel dilutions. an oscillating flame is demonstrated numerically showing that the height of flame base and tip vary during one cycle of oscillation. Under the same condition. non-buoyant flame exhibits only steady lifted flames. This confirms the buoyancy effect on the mechanism of lifted flame oscillation.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.181-181
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• 2016

Hydrogenated microcrystalline silicon (${\mu}c-Si:H$) films have attracted much attention as materials of the bottom-cells in Si thin film tandem photovoltaics due to their low bandgap and excellent stability against light soaking. However, in PECVD, the source gas $SiH_4$ must be highly diluted by $H_2$, which eventually results in low deposition rate. Moreover, it is known that high-rate ${\mu}c-Si:H$ growth is usually accompanied by a large number of dangling-bond (DB) defects in the resulting films, which act as recombination centers for photoexcited carriers, leading to a deterioration in the device performance. During film deposition, Si nanoparticles generated in $SiH_4$ discharges can be incorporated into films, and such incorporation may have effects on film properties depending on the size, structure, and volume fraction of nanoparticles incorporated into films. Here we report experimental results on the effects of nonoparticles incorporation at the different substrate temperature studied using a multi-hollow discharge plasma CVD method in which such incorporation can be significantly suppressed in upstream region by setting the gas flow velocity high enough to drive nanoparticles toward the downstream region. All experiments were performed with the multi-hollow discharge plasma CVD reactor at RT, 100, and $250^{\circ}C$, respectively. The gas flow rate ratio of $SiH_4$ to $H_2$ was 0.997. The total gas pressure P was kept at 2 Torr. The discharge frequency and power were 60 MHz, 180 W, respectively. Crystallinity Xc of resulting films was evaluated using Raman spectra. The defect densities of the films were measured with electron spin resonance (ESR). The defect density of fims deposited in the downstream region (with nonoparticles) is higher defect density than that in the upstream region (without nanoparticles) at low substrate temperature of RT and $100^{\circ}C$. This result indicates that nanoparticle incorporation can change considerably their film properties depending on the substrate temperature.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.16.2-16.2
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• 2011

Graphene has attracted significant attention due to its unique characteristics and promising nanoelectronic device applications. For practical device applications, it is essential to synthesize high-quality and large-area graphene films. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD) on metal substrates such as Ni, Cu, Ru etc. The CVD has advantages over some of other methods in terms of mass production on large-areas substrates and it can be easily separated from the metal substrate and transferred to other desired substrates. Especially, plasma-enhanced CVD (PECVD) can be very efficient to synthesize high-quality graphene. Little information is available on the synthesis of graphene by PECVD even though PECVD has been demonstrated to be successful in synthesizing various carbon nanostructures such as carbon nanotubes and nanosheets. In this study, we synthesized graphene on $Ni/SiO_2/Si$ and Cu plate substrates with CH4 diluted in $Ar/H_2$ (10%) by using an inductively-coupled PECVD (ICPCVD). High-quality graphene was synthesized at as low as $700^{\circ}C$ with 600 W of plasma power while graphene layer was not formed without plasma. The growth rate of graphene was so fast that graphene films fully covered on substrate surface just for few seconds $CH_4$ gas supply. The transferred graphene films on glass substrates has a transmittance at 550 nm is higher 94%, indicating 1~3 monolayers of graphene were formed. FETs based on the grapheme films transferred to $Si/SiO_2$ substrates revealed a p-type. We will further discuss the synthesis of graphene and doped graphene by ICPVCD and their characteristics.

• Korean Journal of Materials Research
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• v.24 no.12
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• pp.694-699
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• 2014

We report the chemical vapor deposition growth characteristics of graphene on various catalytic metal substrates such as Ni, Fe, Ag, Au, and Pt. 50-nm-thick metal films were deposited on $SiO_2/Si$ substrates using dc magnetron sputtering. Graphene was synthesized on the metal/$SiO_2$/Si substrates with $CH_4$ gas (1 SCCM) diluted in mixed gases of 10% $H_2$ and 90 % Ar (99 SCCM) using inductively-coupled plasma chemical vapor deposition (ICP-CVD). The highest quality of graphene film was achieved on Ni and Fe substrates at $900^{\circ}C$ and 500 W of ICP power. Ni substrate seemed to be the best catalytic material among the tested materials for graphene growth because it required the lowest growth temperature ($600^{\circ}C$) as well as showing a low ICP power of 200W. Graphene films were successfully grown on Ag, Au, and Pt substrates as well. Graphene was formed on Pt substrate within 2 sec, while graphene film was achieved on Ni substrate over a period of 5 min of growth. These results can be understood as showing the direct CVD growth of graphene with a highly efficient catalytic reaction on the Pt surface.

• Korean Journal of Materials Research
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• v.23 no.1
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• pp.47-52
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• 2013

Graphene has been synthesized on 100- and 300-nm-thick Ni/$SiO_2$/Si substrates with $CH_4$ gas (1 SCCM) diluted in mixed gases of 10% $H_2$ and 90% Ar (99 SCCM) at $900^{\circ}C$ by using inductively-coupled plasma chemical vapor deposition (ICP-CVD). The film morphology of 100-nm-thick Ni changed to islands on $SiO_2$/Si substrate after heat treatment at $900^{\circ}C$ for 2 min because of grain growth, whereas 300-nm-thick Ni still maintained a film morphology. Interestingly, suspended graphene was formed among Ni islands on 100-nm-thick Ni/$SiO_2$/Si substrate for the very short growth of 1 sec. In addition, the size of the graphene domains was much larger than that of Ni grains of 300-nm-thick Ni/$SiO_2$/Si substrate. These results suggest that graphene growth is strongly governed by the direct formation of graphene on the Ni surface due to reactive carbon radicals highly activated by ICP, rather than to well-known carbon precipitation from carbon-containing Ni. The D peak intensity of the Raman spectrum of graphene on 300-nm-thick Ni/$SiO_2$/Si was negligible, suggesting that high-quality graphene was formed. The 2D to G peak intensity ratio and the full-width at half maximum of the 2D peak were approximately 2.6 and $47cm^{-1}$, respectively. The several-layer graphene showed a low sheet resistance value of $718{\Omega}/sq$ and a high light transmittance of 87% at 550 nm.