• Journal of IKEEE
• /
• v.24 no.4
• /
• pp.1074-1080
• /
• 2020

This paper proposes a digitally controlled buck converter insensitive to process, voltage and temperature and capable of three modes of operation depending on the state of the output voltage. Conventional digital-controlled buck converters utilized A/D converters, counters and delay line circuits for accurate output voltage control, resulting in increasing the number of counter and delay line bits. This problem can be resolved by employing the 8-bit and 16-bit bidirectional shift registers, and this design technique leads a buck converter to be able to control duty ratio up to 128-bit resolution. The proposed buck converter was designed and fabricated with a CMOS 180 nano-meter 1-poly 6-metal process, generating an output voltage of 0.9 to 1.8V with the input voltage range of 2.7V to 3.6V, a ripple voltage of 30mV, and a power efficiency of up to 92.3%. The transient response speed of the proposed circuit was measured to be 4us.

• Korean Journal of Optics and Photonics
• /
• v.32 no.6
• /
• pp.259-265
• /
• 2021

Recently, lens manufacturing and assembly technology has greatly improved. However, tight requirements of manufacturing and assembly lead to an increase in cost and manufacturing time, and in some cases the performance of an optical system may deteriorate depending on the operating environment's conditions, such as temperature or vibration. In addition, the use of a compensator is an effective method to reduce sensitivity in an ultra-precision optical system, but in the case of a small lens, such as that in an endoscope, it is difficult to use a compensator due to the size limitation of the lens barrel. Therefore, minimizing lens sensitivity is the most important technology in lens design. For this reason, there have been various attempts to reduce the lens sensitivity, and there is a trend to add functions to reduce the sensitivity in the lens design S/W. In this paper, we introduce a design technology that minimizes lens sensitivity. We first design a lens with quite good performance, then analyze the sensitivity of this lens, make a multi-configuration with high-sensitivity element error, and then reoptimize it. We prove with an example that this design technique is very effective.

• Journal of IKEEE
• /
• v.26 no.1
• /
• pp.50-55
• /
• 2022

SiC is a power semiconductor with a wide bandgap, high insulation failure strength, and thermal conductivity, but many deep-level defects. Defects that appear in SiC can be divided into two categories, defects that appear in physical properties and interface traps that appear at interfaces. In this paper, Z_1/2 trap concentration 0 ~ 9×10¹⁴ cm^-3 reported at room temperature (300 K) is applied to SiC substrates and epi layer to investigate turn-on characteristics. As the trap concentration increased, the current density, Shockley-read-Hall (SRH), and Auger recombination decreased, and Ron increased by about 550% from 0.004 to 0.022 mohm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.36 no.6
• /
• pp.588-593
• /
• 2023

The advantage of OTFT technology is that large-area circuits can be manufactured on flexible substrates using a low-cost solution process such as inkjet printing. Compared to silicon-based inorganic semiconductor processes, the process temperature is lower and the process time is shorter, so it can be widely applied to fields that do not require high electron mobility. Materials that have utility as electrode materials include carbon that can be solution-processed, transparent carbon thin films, and metallic nanoparticles, etc. are being studied. Recently, a technology has been developed to facilitate charge injection by coating the surface of the Al electrode with solution-processable titanium oxide (TiOx), which can greatly improve the performance of OTFT. In order to commercialize OTFT technology, an appropriate method is to use a complementary circuit with excellent reliability and stability. For this, insulators and channel semiconductors using organic materials must have stability in the air. In this study, carbon-doped Mo (MoC) thin films were fabricated with different graphite target power densities via unbalanced magnetron sputtering (UBM). The influence of graphite target power density on the structural, surface area, physical, and electrical properties of MoC films was investigated. MoC thin films deposited by the unbalanced magnetron sputtering method exhibited a smooth and uniform surface. However, as the graphite target power density increased, the rms surface roughness of the MoC film increased, and the hardness and elastic modulus of the MoC thin film increased. Additionally, as the graphite target power density increased, the resistivity value of the MoC film increased. In the performance of an organic thin film transistor using a MoC gate electrode, the carrier mobility, threshold voltage, and drain current on/off ratio (I_on/I_off) showed 0.15 cm²/V·s, -5.6 V, and 7.5×10⁴, respectively.

• Journal of Sensor Science and Technology
• /
• v.32 no.5
• /
• pp.290-294
• /
• 2023

Among various types of harmful gases, hydrogen sulfide is a strong toxic gas that is mainly generated during spillage and wastewater treatment at industrial sites. Hydrogen sulfide can irritate the conjunctiva even at low concentrations of less than 10 ppm, cause coughing, paralysis of smell and respiratory failure at a concentration of 100 ppm, and coma and permanent brain loss at concentrations above 1000 ppm. Therefore, rapid detection of hydrogen sulfide among harmful gases is extremely important for our safety, health, and comfortable living environment. Most hydrogen sulfide gas sensors that have been reported are electrical resistive metal oxide-based semiconductor gas sensors that are easy to manufacture and mass-produce and have the advantage of high sensitivity; however, they have low gas selectivity. In contrast, the electrochemical sensor measures the concentration of hydrogen sulfide using an electrochemical reaction between hydrogen sulfide, an electrode, and an electrolyte. Electrochemical sensors have various advantages, including sensitivity, selectivity, fast response time, and the ability to measure room temperature. However, most electrochemical hydrogen sulfide gas sensors depend on imports. Although domestic technologies and products exist, more research is required on their long-term stability and reliability. Therefore, this study includes the processes from electrode material synthesis to sensor fabrication and characteristic evaluation, and introduces the sensor structure design and material selection to improve the sensitivity and selectivity of the sensor. A sensor case was fabricated using a 3D printer, and an Ag reference electrode, and a Pt counter electrode were deposited and applied to a Polytetrafluoroethylene (PTFE) filter using PVD. The working electrode was also deposited on a PTFE filter using vacuum filtration, and an electrochemical hydrogen sulfide gas sensor capable of measuring concentrations as low as 0.6 ppm was developed.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.173-173
• /
• 2010

$Bi_4Ti_3O_{12}$ ($B_4T_3$) is a unique ferroelectric material that has a relatively high dielectric constant, high Curie temperature, high breakdown strength, and large spontaneous polarization. As a result this material has been widely studied for many applications, including nonvolatile ferroelectric random memories, microelectronic mechanical systems, and nonlinear-optical devices. Several reports have appeared on the use of Mn dopants to improve the electrical properties of $B_4T_3$ thin films. Mn ions have frequently been used for this purpose in thin films and multilayer capacitors in situations where intrinsic oxygen vacancies are the major defects. However, no systematic study of the optical properties of $B_4T_3$ films has appeared to date. Here, we report optical data for these films, determined by spectroscopic ellipsometry (SE). We also report the effects of thermal annealing and Mn doping on the optical properties. The SE data were analyzed using a multilayer model that is consistent with the original sample structure, specifically surface roughness/$B_4T_3$ film/Pt/Ti/$SiO_2$/c-Si). The data are well described by the Tauc-Lorentz dispersion function, which can therefore be used to model the optical properties of these materials. Parameters for reconstructing the dielectric functions of these films are also reported. The SE data show that thermal annealing crystallizes $B_4T_3$ films, as confirmed by the appearance of $B_4T_3$ peaks in X-ray diffraction patterns. The bandgap of $B_4T_3$ red-shifts with increasing Mn concentration. We interpret this as evidence of the existence deep levels generated by the Mn transition-metal d states. These results will be useful in a number of contexts, including more detailed studies of the optical properties of these materials for engineering high-speed devices.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.39 no.5
• /
• pp.467-471
• /
• 2015

Thus far, solders used in electronics remain lead-based. Pb-free solutions in electronic components and systems are receiving increased attention in the semiconductor and electronics industries. Pb-free materials currently in used are Sn-37Pb, Sn-4Ag and Sn-4Ag-0.5Cu/Ni plate joints. In this study, solder alloys were used at high temperatures for artificial aging processing that was performed at $150^{\circ}C$ for 0hr, 100hr, 200hr, 400hr, 600hr and 1000hr. The SP test was conducted at $30^{\circ}C$ and $50^{\circ}C$. As a result, the maximum shear strength of all the specimens decreased with the increase in artificial aging time and temperature of the SP test. In addition, Pb-free solders showed higher total fracture energy compared with Sn-37Pb at high temperatures. The mechanical properties of Sn-4Ag-0.5Cu solder/Ni plate joints remained in excellent conditions in electronic parking systems at high temperatures.

• Journal of the Microelectronics and Packaging Society
• /
• v.21 no.1
• /
• pp.31-39
• /
• 2014

For mobile application, semiconductor packages are increasingly moving toward high density, miniaturization, lighter and multi-functions. Typical wafer level packages (WLP) is fan-in design, it can not meet high I/O requirement. The fan-out wafer level packages (FOWLPs) with reconfiguration technology have recently emerged as a new WLP technology. In FOWLP, warpage is one of the most critical issues since the thickness of FOWLP is thinner than traditional IC package and warpage of WLP is much larger than the die level package. Warpage affects the throughput and yield of the next manufacturing process as well as wafer handling and fabrication processability. In this study, we investigated the characteristics of warpage and main parameters which affect the warpage deformation of FOWLP using the finite element numerical simulation. In order to minimize the warpage, the characteristics of warpage for various epoxy mold compounds (EMCs) and carrier materials are investigated, and DOE optimization is also performed. In particular, warpage after EMC molding and after carrier detachment process were analyzed respectively. The simulation results indicate that the most influential factor on warpage is CTE of EMC after molding process. EMC material of low CTE and high Tg (glass transition temperature) will reduce the warpage. For carrier material, Alloy42 shows the lowest warpage. Therefore, considering the cost, oxidation and thermal conductivity, Alloy42 or SUS304 is recommend for a carrier material.

• Journal of Radiation Protection and Research
• /
• v.38 no.3
• /
• pp.132-137
• /
• 2013

Cryogenic particle detectors have recently been adopted in radiation detection and measurement because of their high energy resolution. Many of these detectors have demonstrated energy resolutions better than the theoretical limit of semiconductor detectors. We report the development of alpha spectrometer using a micro-fabricated magnetic calorimeter coupled to a large-area particle absorber. A piece of gold foil of $2{\times}2{\times}0.05mm^3$ was glued to the paramagnetic temperature sensor made of sputtered Au:Er film to serve as an absorber for incident alpha particles. We performed experiments with 241Am source at cryogen free adiabatic demagnetization refrigerator (CF-ADR). A high energy resolution of 6.8 keV in FWHM was obtained for 5.5 MeV alpha particles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.03a
• /
• pp.16-16
• /
• 2010

GaN-based light-emitting diodes (LEDs) are attracting great interest as candidates for next-generation solid-state lighting, because of their long lifetime, small size, high efficacy, and low energy consumption. However, for general illumination applications, the external quantum efficiency of LEDs, determined by the internal quantum efficiency (IQE) and the light extraction efficiency, must be further increased. The IQE is determined by crystal quality and epitaxial layer structure and high value of IQE more than 70% for blue LEDs have been already reported. However, there is much room for improvement of light extraction efficiency because most of the generated photons from active layer remain inside LEDs by total internal reflection at the interface of semiconductor with air due to the high refractive index difference between LEDs epilayer (for GaN, n=2.5) and air (n=1). The light confining in LEDs will be reabsorbed by the metal electrode or active layer, reducing the efficacy of LEDs. Here, we present the first demonstration of enhanced light extraction by forming a MgO nano-pyramids structure on the surface of vertical-LEDs. The MgO nano-pyramids structure was successfully fabricated at room temperature using conventional electron-beam evaporation without any additional process. The nano-sized pyramids of MgO are formed on the surface during growth due to anisotropic characteristics between (111) and (200) plane of MgO. The ZnO layer with quarter-wavelength in thickness is inserted between GaN and MgO layers to increase the critical angle for total internal reflection, because the refractive index of ZnO (n=1.94) could be matched between GaN (n=2.5) and MgO (n=1.73). The MgO nano-pyramids structure and ZnO refractive-index modulation layer enhanced the light extraction efficiency ofV-LEDs with by 49%, comparing with the V-LEDs with a flat n-GaN surface. The angular-dependent emission intensity shows the enhanced light extraction through the side walls of V-LEDs as well as through the top surface of the n-GaN, because of the increase in critical angle for total internal reflection as well as light scattering at the MgO nano-pyramids surface.