• 반도체디스플레이기술학회지
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• 제15권3호
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• pp.72-77
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• 2016

As the semiconductor production technology has gradually developed and intra-market competition has grown fiercer, the caliber of Si Wafer for semiconductor production has increased as well. And semiconductors have become integrated with higher density. Presently the Si Wafer caliber has reached up to 450 mm and relevant production technology has been advanced together. Electrostatic chuck is an important device utilized not only for the Wafer transport and fixation but also for the heat treatment process based on plasma. To effectively control the high calories generated by plasma, it employs a refrigerant-based cooling method. Amid the enlarging Si Wafers and semiconductor device integration, effective temperature control is essential. Therefore, uniformed temperature distribution in the electrostatic chuck is a key factor determining its performance. In this study, the form of refrigerant flow channel will be investigated for uniformed temperature distribution in electrostatic chuck.

• 반도체디스플레이기술학회지
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• 제2권3호
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• pp.1-6
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• 2003

In the rapid changes of the semiconductor manufacturing technologies for early 21st century, it may be safely said that a kernel of terms is the size increase of Si wafer and the size decrease of semiconductor devices. As the size of Si wafers increases and semiconductor device is miniaturized, the units of cleaning processes increase. A present cleaning technology is based upon RCA cleaning which consumes vast chemicals and ultra pure water (UPW) and is the high temperature process. Therefore, this technology gives rise to environmental issue. To resolve this matter, candidates of advanced cleaning processes have been studied. One of them is to apply the electrolyzed water. In this work, electrolyzed water cleaning was compared with various chemical cleaning, using Si wafer surfaces by changing cleaning temperature and cleaning time, and especially, concentrating upon the contact angle. It was observed that contact angle on surface treated with Electrolyzed water cleaning was $4.4^{\circ}$ without RCA cleaning. Amine series additive of high pKa (negative logarithm of the acidity constant) was used to observe the property changes of cathode water.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.153.2-153
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• 1998

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2002년도 추계학술발표논문집
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• pp.278-282
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• 2002

본 논문은 반도체 패키징 제조에서 사용되고 있는 반도체 금형을 CAD/CAM을 활용하여 직접 제작하였다. 원래 반도체 금형은 강도와 열성이 아주 좋은 ASP23 재질을 사용하며 매우 고가이다. 또한 특수도팜, 열처리와 정밀한 가공이 되어야 정상적인 반도체 패키징을 할 수 있다. 제작 과정은 CAD/CAM을 활용하여 직접 제작하였으므로 반도체 금형의 제작 방향을 제시하는 계기가 되었다.

• 반도체디스플레이기술학회지
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• 제11권2호
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• pp.17-21
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• 2012

This study developed a high-temperature, high-pressure dynamic pressure sensor using LGT(lanthanum gallium tantalate). The sensitivity of the fabricated dynamic pressure sensor was 2.1 mV/kPa and its nonlinearity was 2.5%FS. We confirmed that the high-temperature dynamic pressure sensor operated stably in high-temperature environment at $500^{\circ}C$. The developed dynamic pressure sensor using LGT is expected to be applicable not only to gas turbines but also in various industrial areas in duding airplanes and power stations.

• Transactions on Electrical and Electronic Materials
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• 제11권4호
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• pp.178-181
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• 2010

An automotive IC voltage regulator which consists of one-chip based on a metal-oxide semiconductor field effect transistor (MOSFET) is investigated experimentally with three types of packaging. The closed type is filled with thermal silicone gel and covered with a plastic lid on the MOSFET. The half-closed type is covered with a plastic case but without thermal silicone gel on the MOSFET. Opened type is no lid without thermal silicone gel. In order to simulate the high temperature condition in engine bay, the operating circuit of the MOSFET is constructed and the surrounding temperature is maintained at $100^{\circ}C$. In the overshoot the maximum was mainly found at the half-closed packaging and the magnitude is dependent on the packaging type and the surrounding temperature. Also the impressed current decreased exponentially during the MOSFET operation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.253-253
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• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.143-147
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• 2001

Ferromagnetism in manganese compound semiconductors open prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds. Also it addresses a question about the origin of the magnetic interactions that lead to a Curie temperature(Tc) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally suggested for transition metals in 1950, can explain Tc of $Ga_{1-x}Mn_x$ As and that of its IT-VI counterpart $Zn_{1-x}Mn_x$ Te and is used to predict materials with Tc exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin. In this article, we present not only the experimental result but calculated Curie temperature by RKKY interaction. The problem in making III-V semiconductor has been the low solubility of magnetic elements, such as manganese, in the compound, since the magnetic effects are roughly proportional to the concentration of the magnetic ions. Low solubility of magnetic elements was overcome by low-temperature nonequilibrium MBE{molecular beam epitaxy) growth, and ferromagnetic (Ga,Mn)As was realized. Magnetotransport measurements revealed that the magnetic transition temperature can be as high as 110 K for a small manganese concentration.

• 반도체디스플레이기술학회지
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• 제18권4호
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• pp.124-128
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• 2019

In this paper, a high temperature plastic film type water level sensor was developed. The high temperature film type water level sensor was manufactured by attaching a copper film to a polyimide film which can be used for a long time at 250℃, by laminating process and patterning the electrode by etching process. For the performance evaluation of the developed film type water level sensor, the temperature dependence of the capacitance was measured, and the deformation was examined after standing for 8 hours in 150℃ air. The developed film type water level sensor can be used at up to 150℃, and can be applied to electric ports and steam devices.

• 한국재료학회지
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• 제13권7호
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• pp.478-483
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• 2003

The crystallographic characteristics of the $(Bi, La)_4$$Ti_3$$O_{12}$ thin film, which is considered as an applicable dielectrics in the ferroelectric RAM device due to a low crystallization temperature and a good fatigue property, were investigated at the atomic scale by high resolution transmission electron microscopy and the high resolution Z-contrast technique. The analysis showed that a (00c) preferred orientation and a crystallization of the film were enhanced with the diffraction intensity increase of the (006) and (008) plane as the annealing temperature increased. It indicated a change of the atomic arrangement in the (00c) plane. Stacking faults on the (00c) plane were also observed. Through the comparison of the high-resolution Z-contrast image and the $Bi_4$$Ti_3$$O_{12}$ atomic model, it was evaluated that the intensity of the Bi atom was different according to the atomic plane, and it was attributed to a substitution of La atom for Bi at the specific atom position.