• Journal of Korean Society of Environmental Engineers
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• v.28 no.3
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• pp.316-322
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• 2006

The current study evaluated the technical feasibility of the application of $TiO_2$ photocatalysis for the removal of nocotine which has well known as a representative material of environmental tobacco smoke(ETS). Four different preliminary experiments were performed for the evaluation of nicotine removal using photocatalyst-coated construction materials. The photocatalytic removal of nicotine was investigated for five parameters: dry condition of coating tiles, type of coating sol, number of coatings, relative humidity(RH), and input concentrations. Prior to performing the parameter tests, adsorption of nicotine onto the current experimental system was surveyed. All the variables tested in the present study exhibited to influence the photocatalytic decomposition of Nicotine. A dry condition of high temperature and short dry period presented higher photocatalytic oxidation(PCO) efficiency compared to that of low temperature and long dry period. ST-KO3 sol showed higher decomposition efficiency than E-T Sol. The PCO efficiency increased as the number of coating increased. High humidity and low input concentrations exhibited higher PCO efficiency. Consequently, it is noted that the five parameters tested in the present study should be considered for the application of photocatalyst-coated construction materials in cleaning nicotine in ETS.

• Journal of the Korean Magnetics Society
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• v.22 no.5
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• pp.167-172
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• 2012

In order to analyze the formation mechanism of iron oxide nanoparticles, we measured the heat flow of $Fe(OL)_3$ precursor with temperature, and TEM images and AC susceptibility of aliquots samples sequentially taken from the reaction solution, respectively. The thermal decomposition of two OL-chain from $Fe(OL)_3$ produced the Fe-OL monomer, which were contributed to the formation of iron oxide nanoparticles. In the initial stage of nanoparticles formation, the small iron oxide nanoparticles had ${\gamma}-Fe_2O_3$ structure. However, as the iron oxide nanoparticles were rapidly growth, the iron oxide nanoparticles showed ${\gamma}-Fe_2O_3$-FeO core-shell structure which the FeO layer was formed on the surface of ${\gamma}-Fe_2O_3$ nanoparticles by insufficient oxygen supply from the reaction solution. These nanoparticles were transformed to $Fe_3O_4$ structure by oxidation during long aging time at high temperature. Finally, the $Fe_3O_4$ nanoparticles with high saturation magnetization and stable in the air could be easily synthesized by the thermal decomposition method.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.6
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• pp.459-463
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• 2017

Hot dip galvanizing in the steel plant is one of the most widely used methods for preventing the corrosion of steel materials including structures, steel sheets, and materials for industrial facilities. While hot dip galvanizing has the advantage of stability and economic feasibility, it has difficulty in repairing equipment and maintaining the facilities due to high-temperature oxidation caused by Zn Fume where molten zinc used in the open spaces. Currently, SM45C (carbon steel plate for mechanical structure, KS standard) is used for the equipment. If a part of the equipment is resistant to high temperature and Zn fume, it is expected to improve equipment life and performance. In this study, the manufactured Ni alloy was tested for its corrosion resistance against Zn fume when it was used in the hot dip galvanizing equipment in the steel plant. Two kinds of materials currently used in the equipment, new Ni alloy and Inconel(typical corrosion-resistant Ni alloy), were selected as the reference groups. Two kinds of molten metal were used to confirm the corrosion of each alloy according to the molten metal. Zn fume was generated by bubbling Ar gas from molten Zn in a furnace($500{\sim}700^{\circ}C$) and the samples were analyzed after 30 days. After 30 days, the specimens were taken out, the oxide layer on the surface was confirmed with an optical microscope and SEM, and the corrosion was confirmed using a potentiodynamic polarization test. Corrosion depends on the type of molten metal.

• Journal of the Korean Applied Science and Technology
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• v.32 no.1
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• pp.78-84
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• 2015

The purpose of this study is to evaluate the removal efficiency of phosphorus from synthetic waste water by reduction and oxidation reaction of Cu-Zn metal alloy. Cu-Zn metal alloy applied in this study is composed of 40% of Zn and 60% of Cu, which is so called Muntz metal. And the fibrous type of metal alloy has approximately $200{\mu}m$ of thickness. Metal is oxidized in an aqueous solution to generate electron and metal ion. The mechanism of phosphate treatment is co-precipitation of metal ion and phosphorous ion at various pH and temperature. The treatment efficiency showed the maximum at a one cycle treatment. This result means that the surface area of reaction material is sufficient enough to get reaction equilibrium. Experiment is conducted at various pH from 5 to 9, and showed the maximum efficiency at pH 8. Phosphorous is dominated as a type of $H_2PO_4{^-}$ and $HPO_4{^{2-}}$ at this pH condition. We could not consider the temperature effect independently, because phosphorous removal efficiency showed such a complex mechanism. We could get high efficiency at lower temperature in this research.

• Journal of Surface Science and Engineering
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• v.29 no.6
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• pp.809-815
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• 1996

$Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 \times 10^{-9}$ -9/ Torr and the process pressure $2 \times 10^{-5}$ Torr in oxygen ambience. Glancing X-ray diffraction(GXRD) and in-situ reflection high energy electron diffracton(RHEED) analyses were performed to investigate the crystallinity of the films. The results show phase change from amorphous state to crystalline one with increasingqr acceleration voltage and substrate temperature. It is also found that the phase transformation from $Y_2O_3$(111)//Si(100) to $Y_2O_3$(110)//Si(100) in growing directions takes place between $500^{\circ}C$ and $700^{\circ}C$. Especially as acceleration voltage is increased, preferentially oriented crystallinity was increased. Finally under the condition of above substrate temperature $700^{\circ}C$ and acceleration voltage 5kV, the $Y_2O_3$films are found to be grown epitaxially in direction of $Y_2O_3$(1l0)//Si(100) by observation of transmission electron microscope(TEM). Capacitance-voltage and current-voltage measurements were conducted to characterize Al/$Y_2O_3$/Si MIS structure with varying acceleration voltage and substrate temperature. Deposited $Y_2O_3$ films of thickness of nearly 300$\AA$ show that the breakdown field increases to 7~8MV /cm at the same conditon of epitaxial growing. These results also coincide with XPS spectra which indicate better stoichiometric characteristic in the condition of better crystalline one. After oxidation the breakdown field increases to 13MV /cm because the MIS structure contains interface silicon oxide of about 30$\AA$. In this case the dielectric constant of only $Y_2O_3$ layer is found to be $\in$15.6. These results have demonstrated the potential of using yttrium oxide for future VLSI/ULSI gate insulator applications.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.142.2-142.2
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• 2018

One-dimensional metal oxide nanostructures have attracted considerable research activities owing to their strong application potential as components for nanosize electronic or optoelectronic devices utilizing superior optical and electrical properties. In which, semiconducting $SnO_2$ material with wide-bandgap Eg = 3.6 eV at room temperature, is one of the attractive candidates for optoelectronic devices operating at room temperature [1, 2], gas sensor [3, 4], and transparent conducting electrodes [5]. The synthesis and gas sensing properties of semiconducting $SnO_2$ nanomaterials have become one of important research issues since the first synthesis of SnO2 nanowires. In this study, $SnO_2$ nanowire networks were synthesized on a basis of a two-step process. In step 1, Sn spheres (30-800 nm in diameter) embedded in $SiO_2$ on a Si substrate was synthesized by a chemical vapor deposition method at $700^{\circ}C$. In step 2, using the source of these Sn spheres, $SnO_2$ nanowire (20-40 nm in diameter; $1-10{\mu}m$ in length) networks on a spherical Sn surface were synthesized by a thermal oxidation method at $800^{\circ}C$. The Au layers were pre-deposited on the surface of Sn spherical and subsequently oxidized Sn surface of Sn spherical formed SnO2 nanowires networks. Field emission scanning electron microscopy and high-resolution transmission electron microscopy images indicated that $SnO_2$ nanowires are single crystalline. In addition, the $SnO_2$ nanowire is also a tetragonal rutile, with the preferred growth directions along [100] and a lattice spacing of 0.237 nm. Subsequently, the $NO_2$ sensing properties of the $SnO_2$ network nanowires sensor at an operating temperature of $50-250^{\circ}C$ were examined, and showed a reversible response to $NO_2$ at various $NO_2$ concentrations. Finally, details of the growth mechanism and formation of Sn spheres and $SnO_2$ nanowire networks are also discussed.

• Journal of Sensor Science and Technology
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• v.8 no.2
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• pp.115-123
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• 1999

A micro-gas sensor with heater and sensing electrode on the same plane was fabricated on phosphosilicate glass(PSG, 800nm)/$Si_3N_4$ (150nm) dielectric membrane. PSG film was provided by atmospheric pressure chemical vapor deposition(APCVD), and $Si_3N_4$ film by low pressure chemical vapor deposition (LPCVD). Total area of the fabricated device was $3.78{\times}3.78mm^2$. The area of diaphragm was $1.5{\times}1.5mm^2$, and that of the sensing layer was $0.24{\times}0.24mm^2$. Finite-element simulation was employed to estimate temperature distribution for a square-shaped diaphragm. The power consumption of Pt heater was about 85mW at $350^{\circ}C$. Tin thin films were deposited on the silicon substrate by thermal evaporation at room temperature and $232^{\circ}C$, and tin oxide films($SnO_2$) were prepared by thermal oxidation of the metallic tin films at $650^{\circ}C$ for 3 hours in oxygen ambient. The film analyses were carried out by SEM and XRD techniques. Effects of humidity and ambient temperature on the resistance of the sensing layer were found to be negligible. The fabricated micro-gas sensor exhibited high sensitivity to butane gas.

• The Korean Journal of Food And Nutrition
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• v.36 no.6
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• pp.479-488
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• 2023

In this study, quality properties of rapeseed oil by different roasting temperatures (140, 160, 180, and 200℃) were investigated. Roasted-pressed oil (RPO) showed a decrease in lightness and an increase in redness and yellowness with an increase in temperature compared to cold-pressed oil (CPO). In addition, the β-carotene and tocopherol content also increased in RPO as the roasting temperature increased. The tocopherol content increased by 18~20% in RPO at 200℃ compared to CPO. This increase in bioactive components led to improved radical scavenging activity dependent on roasting temperature, and RPO at 200℃ showed a 2.7-fold improvement compared to CPO. Finally, it was observed that higher roasting temperatures resulted in an extended oxidation induction period, increasing by up to 3.3 times. In conclusion, roasting is an effective method for enhancing the oil functionality of domestic rapeseed varieties. This study provides basic data for producing high-quality oil.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.50 no.2
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• pp.143-151
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• 2024

Ozone is a colorless, toxic gas that is produced when nitrogen oxides and hydrocarbons undergo a photochemical oxidation reaction in the sun's rays. Even at low concentrations, it affects the respiratory system, causing coughing and other harmful effects. It was confirmed that ozone was generated from nitrogen plasma among cosmetic raw materials, and it was found that the concentration of ozone decreased after 1 day. On the other hand, ozone was not detected in ozone-free plasma generated with argon gas. Therefore, we aimed to produce ozone-free cosmetics by utilizing ozone-free plasma. For efficient plasma processing, the non-sinking method was utilized to inject the plasma into layer separation mists, toners, and ampoules, and the stability was observed. It was found that the successful injection of plasma in the layer separation mist was higher than the other two formulations, but decreased sharply compared to the toner and ampoule. It was found that the ozone-free plasma used did not affect the stability of the layer separation mist, toner, and ampoule under low temperature (4 ℃), room temperature (25 ℃), and high temperature (37 ℃, 50 ℃) conditions. Therefore, this study suggests the importance of ozone-free plasma for cosmetic potential and stability of each formulation.

• Clean Technology
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• v.7 no.3
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• pp.215-223
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• 2001

A present semiconductor cleaning technology is based upon RCA cleaning technology which consumes vast amounts of chemicals and ultra pure water(UPW) and is the high temperature process. Therefore, this technology gives rise to the many environmental issues, and some alternatives such as electrolyzed water(EW) are being studied. In this work, intentionally contaminated Si wafers were cleaned using the electrolyzed water. The electrolyzed water was generated by an electrolysis system which consists of three anode, cathode, and middle chambers. Oxidative water and reductive water were obtained in anode and cathode chambers, respectively. In case of NH4Cl electrolyte, the oxidation-reduction potential and pH for anode water(AW) and cathode water(CW) were measured to be +1050mV and 4.8, and -750mV and 10.0, respectively. AW and CW were deteriorated after electrolyzed, but maintained their characteristics for more than 40 minutes sufficiently enough for cleaning. Their deterioration was correlated with CO2 concentration changes dissolved from air. Contact angles of UPW, AW, and CW on DHF treated Si wafer surfaces were measured to be $65.9^{\circ}$, $66.5^{\circ}$ and $56.8^{\circ}$, respectively, which characterizes clearly the eletrolyzed water. To analyze the amount of metallic impurities on Si wafer surface, ICP-MS was introduced. It was known that AW was effective for Cu removal, while CW was more effective for Fe removal. To analyze the number of particles on Si wafer surfaces, Tencor 6220 were introduced. The particle distributions after various particle removal processes maintained the same pattern. In this work, RCA consumed about $9{\ell}$ chemicals, while EW did only $400m{\ell}$ HCl electrolyte or $600m{\ell}$ NH4Cl electrolyte. It was hence concluded that EW cleaning technology would be very effective for promoting environment, safety, and health(ESH) issues in the next generation semiconductor manufacturing.