• Title/Summary/Keyword: high-aspect ratio

Search Result 956, Processing Time 0.028 seconds

The fabrication of high aspect ratio microstructures by negative photosensitive glass process (Negative photosensitive glass process에 의한 high aspect ratio 마이크로 구조물의 제조)

  • Cho, Soo-Je;Ryu, Byung-Gil
    • Proceedings of the KIEE Conference
    • /
    • 1999.11d
    • /
    • pp.1140-1141
    • /
    • 1999
  • 유리 및 세라믹 미세구조물은 열적, 화학적, 기계적특성이 우수하며 이 제조방법으로 대표적인 것이 그라스의 노광, 열처리에 의한 노광부를 선택적으로 에칭시켜 구조물을 형성시키는 감광성그라스 공정이다. 그러나 공정조건을 변화시킴에 따라 기존과는 정반대로 비노광부를 선택적으로 에칭시키는 것이 가능하였으며 본 방식에 의해서 더욱 정밀한 미세구조물을 형성할 수 있음을 확인하였다.

  • PDF

Atomic Layer Deposition-incorporated Catalyst Deposition for the Vertical Integration of Carbon Nanotubes

  • Jung, Sung-Hwan
    • Journal of Electrical Engineering and Technology
    • /
    • v.6 no.5
    • /
    • pp.688-692
    • /
    • 2011
  • Carbon nanotubes (CNTs) are vertically grown inside high-aspect-ratio vertical pores of anodized aluminum oxide. A CNT catalyst layer is introduced by atomic layer deposition to the bottom of the pores, after which the CNTs are successfully grown from the layer using chemical vapor deposition. The CNTs formed a complete vertical conductive path. The conductivity of the CNT-vertical path is also measured and discussed. The present atomic layer deposition-incorporated catalyst deposition is predicted to enable the integration of CNTs with various challenging configurations, including high-aspect-ratio vertical channels or vertical interconnects.

A study on the effect of binder properties on feedstock and micro powder injection molding process (마이크로 분말사출성형에서 바인더 물성이 피드스탁 및 성형공정에 미치는 영향에 관한 연구)

  • Lee, Won-sik;Kim, Yong-dae
    • Design & Manufacturing
    • /
    • v.11 no.3
    • /
    • pp.1-7
    • /
    • 2017
  • The fabrication process of micro pattern structure with high precision and high aspect ratio using powder injection molding (PIM) is developed. In the PIM process, the metal powder is mixed with the binder systems and the mixture is injected into the metal mold. The injection molded green parts are debinded and sintered to reach final shape and properties. In this method, the optimization of physical properties such as fluidity and strength of the binder system is essential for perfect filling the high aspect ratio micro-pattern. For this purpose, the correlation between the properties of the binder system and feedstock and ${\mu}-PIM$ process was investigated, and a binder system with low viscosity at low temperature(about $110^{\circ}C$) and high strength after cooling was investigated and applied. Employing this process, high precision parts with line type micro pattern structure which has pattern size $160{\mu}m$ and aspect ratio more than 2 can be manufactured.

Via-size Dependance of Solder Bump Formation (비아 크기가 솔더범프 형성에 미치는 영향)

  • 김성진;주철원;박성수;백규하;이상균;송민규
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.8 no.1
    • /
    • pp.33-38
    • /
    • 2001
  • We investigate the via-size dependance of as-electroplated- and reflow-bump shapes for realizing both high-density and high-aspect ratio of solder bump. The solder bump is fabricated by subsequent processes as follows. After sputtering a TiW/Al electrode on a 5-inch Si-wafer, a thick photoresist for via formation it obtained by multiple-codling method and then vias with various diameters are defined by a conventional photolithography technique using a contact alinger with an I-line source. After via formation the under ball metallurgy (UBM) structure with Ti-adhesion and Cu-seed layers is sputtered on a sample. Cu-layer and Sn/pb-layer with a competition ratio of 6 to 4 are electroplated by a selective electroplating method. The reflow-bump diameters at bottom are unchanged, compared with as-electroplated diameters. As-electroplated- and reflow-bump shapes, however, depend significantly on the via size. The heights of as-electroplated and reflow bumps increase with the larger cia, while the aspect ratio of bump decreases. The nearest bumps may be touched by decreasing the bump pitch in order to obtain high-density bump. The touching between the nearest bumps occurs during the overplating procedure rather than the reflowing procedure because the mushroom diameter formed by overplating is larger than the reflow-bump diameter. The arrangement as zig-zag rows can be effective for realizing the flip-chip-interconnect bump with both high-density and high-aspect ratio.

  • PDF

Multi-layer Front Electrode Formation to Improve the Conversion Efficiency in Crystalline Silicon Solar Cell (결정질 실리콘 태양전지의 효율 향상을 위한 다층 전면 전극 형성)

  • Hong, Ji-Hwa;Kang, Min Gu;Kim, Nam-Soo;Song, Hee-Eun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.25 no.12
    • /
    • pp.1015-1020
    • /
    • 2012
  • Resistance of the front electrode is the highest proportion of the ingredients of the series resistance in crystalline silicon solar cell. While resistance of the front electrode is decreased with larger area, it induces the optical loss, causing the conversion efficiency drop. Therefore the front electrode with high aspect ratio increasing its height and decreasing is necessary for high-efficiency solar cell in considering shadowing loss and resistance of front electrode. In this paper, we used the screen printing method to form high aspect ratio electrode by multiple printing. Screen printing is the straightforward technology to establish the electrodes in silicon solar cell fabrication. The several printed front electrodes with Ag paste on silicon wafer showed the significantly increased height and slightly widen finger. As a result, the resistance of the front electrode was decreased with multiple printing even if it slightly increased the shadowing loss. We showed the improved electrical characteristics for c-Si solar cell with repeatedly printed front electrode by 0.5%. It lays a foundation for high efficiency solar cell with high aspect ratio electrode using screen printing.

Modal Test and Finite Element Model Update of Aircraft with High Aspect Ratio Wings (고세장비 항공기의 모드 시험 및 동특성 유한요소모델 개선)

  • Kim, Sang-Yong
    • Transactions of the Korean Society for Noise and Vibration Engineering
    • /
    • v.22 no.5
    • /
    • pp.480-488
    • /
    • 2012
  • The aircrafts with high aspect ratio wings made by a composite material have been developed, which enable high energy efficiency and long-term flight by reducing air resistance and structural weight. However, they have difficulties in securing the aeroelastic stability such as the flutter because of their long and flexible wings. The flutter is unstable self-excited-vibration caused by interaction between the structural dynamics and the aerodynamics. It should be verified analytically prior to first flight test that the flutter does not happen in the range of flight mission. Normally, the finite element model is used for the flutter analysis. So it is important to construct the finite element model representing dynamic characteristics similar to those of a real aircraft. Accordingly, in this research, to acquire dynamic characteristics experimentally the modal test of the aircraft with high aspect ratio composite wings was conducted. And then the modal parameters from the finite element analysis(FEA) were compared with those from the modal test. To make analysis results closer to test results, the finite element model was updated by means of the sensitivity analysis on variables and the optimization. Finally, it was proved that the updated finite element model is reliable as compared with the results of the modal test.

Filling of Cu-Al Alloy Into Nanoscale Trench with High Aspect Ratio by Cyclic Metal Organic Chemical Vapor Deposition

  • Moon, H.K.;Lee, S.J.;Lee, J.H.;Yoon, J.;Kim, H.;Lee, N.E.
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2012.02a
    • /
    • pp.370-370
    • /
    • 2012
  • Feature size of Cu interconnects keep shrinking into several tens of nanometer level. For this reason, the Cu interconnects face challenging issues such as increase of electro-migration, line-width dependent electrical resistivity increase, and gap-filling difficulty in high aspect ratio structures. As the thickness of the Cu film decreases below 30 nm, the electrical resistivity is not any more constant, but rather exponential. Research on alloying with other elements have been started to inhibit such escalation in the electrical resistivity. A faint trace of Al added in Cu film by sputtering was reported to contribute to suppression of the increase of the electrical resistivity. From an industrial point of view, we introduced cyclic metal organic chemical vapor deposition (MOCVD) in order to control Al concentration in the Cu film more easily by controlling the delivery time ratio of Cu and Al precursors. The amount of alloying element could be lowered at level of below 1 at%. Process of the alloy formation was applied into gap-filling to evaluate the performance of the gap-filling. Voidless gap-filling even into high aspect ratio trenches was achieved. In-depth analysis will be discussed in detail.

  • PDF