• 제목/요약/키워드: high-$T_c$ tunnel junction

검색결과 12건 처리시간 0.027초

Microwave plasma emission from tunnel-injected nonequilibrium high-Tc superconductors

  • Lee, Kie-Jin
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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    • pp.9-14
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    • 2000
  • We report on the novel nonequilibrium nlicrowave emission from quasiparticle-injected high-Tc superconductors. The phenomena have been observed for the current-injected YBCO/I/Au or BSCCO/I/Au thin-film tunnel junctions and BSCCO single-crystal intrinsic Josephson mesa junction samples. For the thin-film tunnel junctions, the emitted radiation appears as broadband. For the intrinsic BSCCO mesa samples, the radiation appears as three different modes of emissions depending on the bias point in the hysteretic current-voltage characteristics; Josephson-emission, nonequilibrium broad emission and sharp coherent microwave emission. The results were interpreted by the Josephson plasma excitation model due to quasiparticle injection.

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Andreev reflection in metal- and ferromagnet-d-wave superconductor tunnel Junction

  • Kim, Sun-Mi;Hwang, Yun-Seok;Cha, Deok-Joon;Lee, Kie-Jin
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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    • pp.141-144
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    • 2000
  • We report on the influence of d-wave pairing symmetry in high-T$_c$ superconductor by tunneling spectroscopy. The zerobias conductance peak(ZBCP) which is produced by tunneling through the ab-plane is observed on both of metal Au/YBa$_2$Cu$_3$O$_y$(N/S) tunnel junctions and ferromagnet Co/Au/ YBa$_2$Cu$_3$O$_y$(F/N/S) tunnel junctions. The effects of Andreev reflection on the differential conductance of each junctions are dependent on the tunnel direction. For the S/N/F junction, it appears the suppression of the ZBCP due to the suppression of Andreev reflection at the interface between a ferromagnetic material and a d-wave superconductor. By comparing these experimental results with recent theoretical works on Andreev reflection, the existence of Andreev bound state is verified in high-T$_c$ superconductor, due to the d-wave symmetry of the pair potential.

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Tunneling Spectra in Organic Cu-Pc/$Bi_2Sr_2CaCu_2O_{8+\delta}$ Tunnel Junctions

  • Kim, Sunmi;E, Jungyoon;Lee, Kiejin;Ishbas, Takayuki;Lee, Yang-San
    • Progress in Superconductivity
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    • 제3권1호
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    • pp.41-44
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    • 2001
  • We report the current transport properties of a normal metal/organic conductor/ superconductor tunnel junction as a novel high- $T_{c}$ superconducting three terminal device. The organic copper (II) phthalocyanine (Cu-Pc) layer was used far a polaronic quasiparticle (QP) injector. The injection of polaronic QP from the Cu-Pc interlayer into a superconductor $Bi_2$$Sr_2$$CaCu_2$ $O_{8+}$ $\delta$/(BSCCO) thin film generated a substantially larger nonequilibrium effect as compared to the normal QP injection current. The tunneling spectroscopy of an Au/cu-PC/BSCCO junction exhibited a zero bias conductance peak which may be due to Andreev reflection at a Cu-Pc/d-wave superconductor junction.n..

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Comparison of Tunneling Characteristics in the MTJs of CoFeB/MgO/CoFeB with Lower and Higher Tunneling Magnetoresistance

  • Choi, G.M.;Shin, K.H.;Seo, S.A.;Lim, W.C.;Lee, T.D.
    • Journal of Magnetics
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    • 제14권1호
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    • pp.11-14
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    • 2009
  • We investigated the I-V curves and differential tunneling conductance of two, CoFeB/MgO/CoFeB-based, magnetic tunnel junctions (MTJs): one with a low tunneling magnetoresistance (TMR; 22%) and the other with a high TMR (352%). This huge TMR difference was achieved by different MgO sputter conditions rather than by different annealing or deposition temperature. In addition to the TMR difference, the junction resistances were much higher in the low-TMR MTJ than in the high-TMR MTJ. The low-TMR MTJ showed a clear parabolic behavior in the dI/dV-V curve. This high resistance and parabolic behavior were well explained by the Simmons' simple barrier model. However, the tunneling properties of the high-TMR MTJ could not be explained by this model. The characteristic tunneling properties of the high-TMR MTJ were a relatively low junction resistance, a linear relation in the I-V curve, and conduction dips in the differential tunneling conductance. We explained these features by applying the coherent tunneling model.

비정질 CoFeSiB 자유층을 갖는 자기터널접합의 스위칭 특성 (Switching Characteristics of Magnetic Tunnel Junction with Amorphous CoFeSiB Free Layer)

  • 황재연;이장로
    • 한국자기학회지
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    • 제16권6호
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    • pp.276-278
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    • 2006
  • 스위칭 특성을 향상시키기 위하여 비정질 강자성 CoFeSiB 자유층을 갖는 자기터널접합 (MTJ)의 스위칭 특성을 연구하였다. 자기터널접합의 구조는 $Si/SiO_{2}/Ta$ 45/Ru 9.5/IrMn 10/CoFe 10/CoFe $7/AlO_{x}/CoFeSiB\;(t)/Ru\;60\;(nm)$이다. CoFeSiB는 $560\;emu/cm^{3}$의 낮은 포화자화도와 $2800\;erg/cm^{3}$의 높은 이방성 상수를 가졌다. 이러한 특성이 자기터널접합의 낮은 보자력($H_{c}$)과 높은 자장민감도를 갖게 한다. 이것은 또한 Landau-Lisfschitz-Gilbert 방정식에 근거한 미세자기 전산시뮬레이션을 통하여 submicrometersized elements에서도 확인하였다. CoFeSiB 자유층 두께를 증가함으로서 스위칭 특성은 반자화 자기장의 증가로 인하여 더욱더 나빠졌다.

Abnormal Temperature Dependence of Tunneling Magnetoresistance for Magnetic Tunnel Junctions

  • Lee, K.I.;Lee, J.H.;Lee, W.Y.;Rhie, K.;Lee, B.C.;Shin, K.H.
    • Journal of Magnetics
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    • 제7권2호
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    • pp.59-62
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    • 2002
  • Magnetic tunnel junctions (MTJs) were fabricated with high bias for plasma oxidation and the effects of annealing on the temperature dependence of tunneling magnetoresistance (TMR) were investigated experimentally. As-grown, TMR increases, peaks around 160 K, and decreases with increasing temperature from 80 K to 300 K. When MTJs are annealed, $T_{max}$, the temperature at which maximum TMR is obtained, decreases as annealing temperature increases to the optimal point. In order to explain this abnormal temperature dependence of TMR, the difference of conductance between parallel and antiparallel alignments of magnetizations as a function of temperature is also analyzed. The shifts of $T_{max}$ due to annealing process are described phenomenologically with spin-dependent transfer rates of electrons tunnel through the barrier.

Andreev Reflection in Metal- and Ferromagnet-d-wave Superconductor Tunnel Junctions

  • Kim, Sun-Mi;Lee, Kie-Jin;Hwang, Yun-Seok;Cha, Deok-Joon;Ishibashid, Takayuki
    • Progress in Superconductivity
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    • 제2권1호
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    • pp.43-46
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    • 2000
  • We report on the tunneling spectroscopy of tunnel junctions using d-wave superconductor in relation to Andreev reflection. The zero bias conductance peak (ZBCP) which has maximum on [110] direction of ab-plane is observed on metal $Au/YBa_2Cu_3O_y$ tunnel junctions while it is suppressed on the ferromagnetic $Co/Au/YBa_2Cu_3O_y$ tunnel junctions. The effects of Andreev reflection on the differential conductance of each junction are dependent on the tunnel direction. For the $Co/Au/YBa_2Cu_3O_y$ junction, the suppression of Andreev reflection takes place by spin-polarized quasiparticles tunneling from a ferromagnetic material to a d-wave superconductor. By comparing these experimental results with recent theoretical works on Andreev reflection, the existence of Andreev bound state due to the d-wave symmetry of the pair potential is verified in high-$T_c$ superconductor.

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Tunneling Magnetoresistance: Physics and Applications for Magnetic Random Access Memory

  • Park, Stuart in;M. Samant;D. Monsma;L. Thomas;P. Rice;R. Scheuerlein;D. Abraham;S. Brown;J. Bucchigano
    • 한국자기학회:학술대회 개요집
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    • 한국자기학회 2000년도 International Symposium on Magnetics The 2000 Fall Conference
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    • pp.5-32
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    • 2000
  • MRAM, High performance MRAM using MTJS demostrated, fully integrated MTJ MRAM with CMOS circuits, write time ~2.3 nsec; read time ~3 nsec, Thermally stable up to ~350 C, Switching field distibution controlled by size & shape. Magnetic Tunnel Junction Properties, Magnetoresistance: ~50% at room temperature, enhanced by thermal treatment, Negative and Positive MR by interface modification, Spin Polarization: >55% at 0.25K, Insensitive ot FM composition, Resistance $\times$ Area product, ranging from ~20 to 10$^{9}$ $\Omega$(${\mu}{\textrm}{m}$)$^{2}$, Spin valve transistor, Tunnel injected spin polarization for "hot" electrons, Decrease of MTJMR at high bias originates from anode.

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Compositional Change of MgO Barrier and Interface in CoFeB/MgO/CoFeB Tunnel Junction after Annealing

  • Bae, J.Y.;Lim, W.C.;Kim, H.J.;Kim, D.J.;Kim, K.W.;Kim, T.W.;Lee, T.D.
    • Journal of Magnetics
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    • 제11권1호
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    • pp.25-29
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    • 2006
  • Recent experiments have demonstrated high TMR ratios in MTJs with the MgO barrier [1,2]. The CoFeB/MgO/CoFeB junctions showed better properties than the CoFe/MgO/CoFe junctions because the MgO layer had a good crystalline structure with (001) texture and smooth and sharp interface between CoFeB/MgO [3]. The amorphous CoFeB with 20 at%B starts the crystallization at $340^{\circ}C$ [4] and this crystallization of the CoFeB helps obtaining the high TMR ratio. In this work, the compositional changes in the MgO barrier and at the interface of CoFeB/MgO/CoFeB after the CoFeB crystallization were studied in annealed MTJs. XPS depth profiles were utilized. TEM analyses showed that the MgO barrier had (100) texture on CoFeB in the junctions. B in the bottom CoFeB layer diffused into the MgO barrier and B-oxide was formed at the interface of CoFeB/MgO/CoFeB after the CoFeB crystallization.

Tunneling effect due to UV irradiation in organic Cu-Pc/$Bi_2$$Sr_2$Ca$Cu_2$$O_{8+$\delta$}$ tunnel junction

  • Kim, Sunmi;Lee, Kiejin;Deokjoon Cha;Takayuki Ishibashi
    • Progress in Superconductivity
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    • 제4권2호
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    • pp.99-103
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    • 2003
  • We studied the nonequilibrium superconductivity due to tunnel injection of polaronic quasiparticle (QP) from organic photoconductor. The transport properties of an organic copper (II) phthalocyanine (Cu -Pc)/d-wave superconductor were investigated in dark and under ultraviolet (UV) radiation for performance of a novel $high -T_{c}$ superconducting three terminal device. We observed that the injection of polaronic QP from the organic Cu -Pc film into the $Bi_2$S $r_2$$CaCuO_{8+{\delta}}$ film generated a substantially larger nonequilibrium effect as compared to the normal QP injection current. We could increase the current gain by UV excitation of the organic photoconductor injector. The tunneling spectroscopy of a Cu -Pc/BSCCO junction exhibited a small enhancement of the zero bias conductance peak under the W excitation. The above phenomena are of importance in developing optically controlled three terminal superconducting device.e.

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