• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.776-780
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• 2016

Recently, energy harvesting technology is increasing due to the fossil fuel shortages. To compensate problem of low generating power than other energy harvesters, many researchers have studied about piezoelectric harvester for obtaining high output. In this paper, four kinds of unimorph based piezoelectric harvesters were proposed and its generating characteristics were studied. Each of the piezoelectric harvesters has three, four, and six unimorph arms, respectively, and the arms are symmetrically arranged from one central point. The centrosymmetric structure of the harvesters guarantees more stable and multiplied generation than a cantilever-type harvester since the arms of the harvester resonate at same frequency. Resonance frequency, output voltage, displacement, and stress characteristics of the generator were analyzed by using a FEM (finite element method) program. Harvesters were fabricated on the basis of analysis results. Experimental results were compared with simulated results.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2005년도 전력전자학술대회 논문집
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• pp.376-379
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• 2005

High efficiency and low cost sustain driver for plasma display panel (PDP) with current fed is proposed. Main concept of the proposed circuit is using the current source to charge and discharge panel. As a result, all power switches can achieve the zero voltage switching (ZVS) and every auxiliary switch can also do the zero current switching (ZCS). Moreover, since the inductor current can compensate the discharge current, the current stress of all power switches can be reduced considerably. Furthermore, it has features as a simpler structure, less mass, less cost, and lower electromagnetic interference than prior circuit.

• 전력전자학회논문지
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• 제21권1호
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• pp.42-48
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• 2016

Light-emitting diode (LED) drivers are recently replacing fluorescent lamps; these drivers can operate adaptively with various ballasts without modifying and removing such ballasts. To satisfy these trends, a LED driver that is compatible with both electronic and magnetic ballasts is proposed in this study. Unlike conventional LED drivers, the proposed driver has a ballast recognition circuit and a mode selection circuit to operate ballasts at optimal conditions. Therefore, it features low voltage stress, high efficiency, and good compatibility with both electronic and magnetic ballasts. Moreover, it can be compatible with a wide selection of ballasts from various manufacturers. To confirm the validity of the proposed LED driver, results of the theoretical analysis and experimental verification performed on a 15 W-rated prototype are presented.

• 한국재료학회지
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• 제25권10호
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• pp.523-530
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• 2015

Electricity generation through fossil fuels has caused environmental pollution. To solve this problem, research on new renewable energy (solar, wind, geothermal heat, etc.) to replace fossil fuels is in progress. These devices are able to consistently generate power. However, they have many drawbacks, such as high installation costs and limitations in possible set-up environments. Thus, piezoelectric harvesting technology, which is able to overcome the limitations of existing energy technologies, is actively being studied. Piezoelectric harvesting technology uses the piezoelectric effect which occurs in crystals that generate voltage when stress is applied. Therefore, it has advantages such as a wider installation base and lower technological cost. In this study, a piezoelectric energy harvesting device based on constant wave motion was investigated. This device can regenerate electricity in a constant turbulent flow in the middle of the sea. The components of the device are circuitry, a steel bar, an bimorph piezoelectric element and buoyancy elements. In addition, a multiphysical analysis coupled with the structure and piezoelectric elements was conducted to estimate the performance of the device. With this piezoelectric energy harvesting device, the displacement and electric power were analyzed.

• 한국안전학회지
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• 제26권1호
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• pp.8-14
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• 2011

Noise and vibration are likely to disturb the sensory system of human body leading to psychological stress and thereby property damage. In this research, a cut out switch(COS) with a built-in acoustic absorber along with a COS fuse broken was developed to reduce percussion noise. This new system is based on a design approach that combines existing absorber systems: expansion type, resonator type, and acoustic absorber type silencer The noise performance of the new system was simulated using the $SYSNOISE^{TM}$ software under optimized parameters: the diameter of perforated plate 2 mm, the plate thickness 3 mm, the width of expansion room 25 mm, the impinging vortex room 14 mm, and the noise absorbtion room 10 mm. The results showed that it reduced noise by approximately 41.1 dB compared to the current systems available in the market. Furthermore, it showed reduced noise by approximately 12 dB more than a product with an acoustic absorber of the Fault Tamer(USA).

• Journal of Electrical Engineering and Technology
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• 제9권3호
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• pp.957-963
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• 2014

Converter transformers play important roles in high-voltage direct current transmission systems. This paper presents experimental and analysis results of the combined electrical and thermal aging of oil-impregnated paper at pulsating DC voltages. Breakdown voltages and time-to-breakdown of oil-paper specimens were measured by using short-time and constant-stress tests. The breakdown characteristics of combined electrical and thermal aging on insulation system were discussed. According to the relationship between failure time and aging temperature, the two-parameter Weibull model was improved. On the basis of the competing risk algorithm and the improved Weibull model, the two factors failure model was calculated. And the influence of temperature in the insulation system has been analyzed. This model performs better than the two-parameter Weibull model when both time and temperature are considered as variables in estimating the lifetime of oil-paper insulation.

• 한국표면공학회지
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• 제48권2호
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• pp.33-37
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• 2015

High efficiency LED device is being concerned due to its high heat loss, and such heat loss will cause a shorter lifespan and lower efficiency. Since there is a demand for the materials that can release heat quickly into the external air, the organic insulating layer was required to be replaced with high thermal conductive materials such as metal or ceramics. Through anodizing the upper layer of Al, the Breakdown Voltage of 3kV was obtained by using an uniform thickness of $60{\mu}M$ aluminum oxide($Al_2O_3$) and was carried out to determine the optimum process conditions when thermal cracking does not occur. Two Ni layers were formed above the layer of $Al_2O_3$ by sputtering deposition and electroplating process, and saccharin was added for the purpose of minimizing the remain stress in electroplating process. The results presented that the 3-layer film including the Ni layer has an adhesive force of 10N and the thermal conductivity for heat dissipation is achieved by 150W/mK level, and leads to improvement about 7 times or above in thermal conductivity, as opposed to the organic insulation layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.289.2-289.2
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• 2016

In-Ga-Zn-O(IGZO) receive great attention as a channel material for thin film transistors(TFTs) as next-generation display panel backplanes due to its superior electrical and physical properties such as a high mobility, low off-current, high sub-threshold slope, flexibility, and optical transparency. For the purpose of fabricating high performance IGZO TFTs, a thermal recovery process above a temperature of $300^{\circ}C$ is required for recovery or rearrangement of the ionic bonding structure. However diffused metal atoms from source/drain(S/D) electrodes increase the channel conductivity through the oxidation of diffused atoms and reduction of $In_2O_3$ during the thermal recovery process. Threshold voltage ($V_{TH}$) shift, one of the electrical instability, restricts actual applications of IGZO TFTs. Therefore, additional investigation of the electrical stability of IGZO TFTs is required. In this paper, we demonstrate the effect of Ti diffusion and modulation of interface traps by carrying out an annealing process on IGZO. In order to investigate the effect of diffused Ti atoms from the S/D electrode, we use secondary ion mass spectroscopy (SIMS), X-ray photoelectron spectroscopy, HSC chemistry simulation, and electrical measurements. By thermal annealing process, we demonstrate VTH shift as a function of the channel length and the gate stress. Furthermore, we enhance the electrical stability of the IGZO TFTs through a second thermal annealing process performed at temperature $50^{\circ}C$ lower than the first annealing step to diffuse Ti atoms in the lateral direction with minimal effects on the channel conductivity.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.265.2-265.2
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• 2016

Oxide thin film transistors (TFTs) have attracted considerable interest for gate diver and pixel switching devices of the active matrix (AM) liquid crystal display (LCD) and organic light emitting diode (OLED) display because of their high field effect mobility, transparency in visible light region, and low temperature processing below $300^{\circ}C$. Recently, oxide TFTs with polycrystalline In-Ga-O(IGO) channel layer reported by Ebata. et. al. showed a amazing field effect mobility of $39.1cm^2/Vs$. The reason having high field effect mobility of IGO TFTs is because $In_2O_3$ has a bixbyite structure in which linear chains of edge sharing InO6 octahedral are isotropic. In this work, we investigated the characteristics and the effects of oxygen partial pressure significantly changed the IGO thin-films and IGO TFTs transfer characteristics. IGO thin-film were fabricated by rf-magnetron sputtering with different oxygen partial pressure ($O_2/(Ar+O_2)$, $Po_2$)ratios. IGO thin film Varies depending on the oxygen partial pressure of 0.1%, 1%, 3%, 5%, 10% have been some significant changes in the electrical characteristics. Also the IGO TFTs VTH value conspicuously shifted in the positive direction, from -8 to 11V as the $Po_2$ increased from 1% to 10%. At $Po_2$ was 5%, IGO TFTs showed a high drain current on/off ratio of ${\sim}10^8$, a field-effect mobility of $84cm^2/Vs$, a threshold voltage of 1.5V, and a subthreshold slpe(SS) of 0.2V/decade from log(IDS) vs VGS.

• 전력전자학회논문지
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• 제22권4호
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• pp.360-368
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• 2017

This paper proposes the 80-kW high-efficiency bidirectional hybrid SiC boost/buck converter using droop control for DC nano-grid. The proposed converter consists of four 20-kW modules to achieve fault tolerance, ease of thermal management, and reduced component stress. Each module is constructed as a cascaded structure of the two basic bi-directional converters, namely, interleaved boost and buck converters. A six-pack hybrid SiC intelligent power module (IPM) suitable for the proposed cascaded structure is adopted for high-efficiency and compactness. The proposed converter with hybrid switching method reduces the switching loss by minimizing switching of insulated gate bipolar transistor (IGBT). Each module control achieves smooth transfer from buck to boost operation and vice versa, since current controller switchover is not necessary. Furthermore, the proposed parallel control using DC droop with secondary control, enhances the current sharing accuracy while well regulating the DC bus voltage. A 20-kW prototype of the proposed converter has been developed and verified with experiments and indicates a 99.3% maximum efficiency and 98.8% rated efficiency.