• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.239-244
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• 2017

We experimentally investigate the physical mechanism for asymmetrical degradation in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) under simultaneous gate and drain bias stresses. The transfer curves exhibit an asymmetrical negative shift after the application of gate-to-source ($V_{GS}$) and drain-to-source ($V_{DS}$) bias stresses of ($V_{GS}=24V$, $V_{DS}=15.9V$) and ($V_{GS}=22V$, $V_{DS}=20V$), but the asymmetrical degradation is more significant after the bias stress ($V_{GS}$, $V_{DS}$) of (22 V, 20 V) nevertheless the vertical electric field at the source is higher under the bias stress ($V_{GS}$, $V_{DS}$) of (24 V, 15.9 V) than (22 V, 20 V). By using the modified external load resistance method, we extract the source contact resistance ($R_S$) and the voltage drop at $R_S$ ($V_{S,\;drop}$) in the fabricated a-IGZO TFT under both bias stresses. A significantly higher RS and $V_{S,\;drop}$ are extracted under the bias stress ($V_{GS}$, $V_{DS}$) of (22 V, 20V) than (24 V, 15.9 V), which implies that the high horizontal electric field across the source contact due to the large voltage drop at the reverse biased Schottky junction is the dominant physical mechanism causing the asymmetrical degradation of a-IGZO TFTs under simultaneous gate and drain bias stresses.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.410-414
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• 2001

The microstructure, V-I characteristics, and stability of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_2$O$_3$-Y$_2$O$_3$based vairstors were investigated with cooling rate in the range of 2~8$^{\circ}C$/min. The cooling rate relatively weakly affected the microstructure, and the varistor voltage and the leakage current in the V-I chracteristics. But the nonlinear exponent relatively strongly affected by cooling rate. And the cooling rate also greatly affected the stability for DC stress. In gross, the varistors cooled with 4$^{\circ}C$/min exhibited the highest performance in the densification, nonlinearity, and stability. Especially, they exhibited a high stability, in which the variation rate of the varistor voltage and the nonlinear exponent is -1.44% and -4.85%, respectively, under more severe DC stress such as (0.80 V$_{1mA}$9$0^{\circ}C$/12 h)+(0.85 V$_{1mA}$115$^{\circ}C$/12 h)\`(0.90 V$_{1mA}$12$0^{\circ}C$/12 h)+(0.95 V$_{1mA}$1$25^{\circ}C$/12 h)+(0.95 V$_{1mA}$15$0^{\circ}C$/12 h). It should be emphasized that the stability of these varistors is much superior to that of others.s.of others.s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.415-418
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• 2001

The I-V characteristics and its stability of ZPCCL-based ceramic varistors doped with La$_2$O$_3$in the range of 0.0~4.0 mol% were investigated. The density of ceramics was increased in the range of 4.7~5.8 g/cm$^3$ with increasing La$_2$O$_3$content. As La$_2$O$_3$content is increased, the varistor voltage was decreased in the range of 503.49-9.42 V/mm up to 2.0 mol%, whereas increasing La$_2$O$_3$content further caused it to increase. The ZPCCL-based varistors were characterized by nonlinearity, in which the nonlinear exponent is in the range of 3.05~82.43 and leakage current is in the range of 0.24-100.22 $\mu$A. Among ZPCCL-based varistors, 0.5 mol% added-varistors exhibited an excellent nonlinearity, in which the nonlinear exponent is 82.43 and the leakage current is 0.24 $\mu$A. Furthermore, they exhibited a high stability, in which the variation rate of the varistor voltage and the nonlinear exponent was -1.11% and -6.72%, respectively, under DC stress, such as (0.80 V$_{1mA}$9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$115$^{\circ}C$//12h) +(0.90 V$_{1mA}$12$0^{\circ}C$//12h)+(0.95 V$_{1mA}$1$25^{\circ}C$//12h)+(0.95 V$_{1mA}$15$0^{\circ}C$//12h). Consequently, it was estimated that ZPCCL-based ceramics will be applied to development of Pr$_{6}$O$_{11}$ based ZnO varistors having a high performance.e.rformance.e.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.135-135
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• 1999

It is well known that Raman spectroscopy is powerful tool in analysis of sp3/sp3 bonding fraction in diamond-like carbon(DLC) films. Raman spectra of DLC film is composed of D-peak centered at 1350cm-1 and G-peak centered at 1530cm-1. The sp3/sp3 fraction is qualitatively acquired by deconvolution method. However, in case of DLC film, it is generally observed that G-peak position shifts toward low wavenumber as th sp3 fraction increases. However, opposite results were frequently observed in ta-C films. ta-C film has much higher residual compressive stress due to its high sp3 fraction compared to the DLC films deposited by CVD method. Effect of residual stress on G-peak position is most recommendable parameter in Raman analysis of ta-C, due to its smallest fitting error among many parameters acquired by peak deconvolution of symmetric spectra. In current study, the effect of residual stress on Raman spectra was quantitatively evaluated by free-hang method. ta-C films of different residual stress were deposited on Si-wafer by modifying DC-bias voltage during deposition. The variation of the G-peak position along the etching depth were observed in the free-hangs of 20~30${\mu}{\textrm}{m}$ etching depth. Mathematical result based on Airy stress function, was compared with experimental results. The more reliable analysis excluding stress-induced shift was possible by elimination of the Raman shift due to residual compressiove stress.

• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.241-244
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• 1991

In this paper, we introduced Silicon Oxynitride films deposited by Laser CVD, and evaluated the electrical breakdown of these films by TZDB(Time Zero Dielectric Breakdown) and TDDB(Time Dependent Dielectric Breakdown) test. In addition, high frequency C-V test was done in order to calculate hysterisis and flatband voltage(before and after electric field stress). Failure times against eletric field are examined and electric field accelation factor $\beta$ are obtained, and long term reliability was also described by extrapolating into life time in the operating voltage(5V). In this experiments, the deposited films with increased temperature represented small flatband voltage, hysterisis and favorable breakdown characteristics, this is why the hydrogen in the film was decreased and the film was densified, long term reliability was good in the laser CVD SiON films.

• Proceedings of the KIPE Conference
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• 2008.06a
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• pp.379-381
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• 2008

Generally additional leakage inductance and two clamp diodes are adopted into the conventional phase shift full bridge (PSFB) converter for reducing the voltage stress of secondary rectifier diodes and extending the range of zero voltage switching (ZVS) operation. However, since additional leakage inductance carries the ac current similar to the primary one, the core and copper loss oriented from additional leakage inductance can be high enough to decrease the whole efficiency of DC/DC converter. Therefore, in this paper, a new ZVS phase shift full bridge converter with separated primary winding (SPW) is proposed. Proposed converter makes the transformer and additional leakage inductor with one ferrite core. Using this method, leakage inductance is controlled by the winding ratio of separated primary winding. Moreover, by manufacturing the both magnetic components with one core, size and core loss can be reduced and it turns out the improvement of efficiency and power density of DC/DC converter. The operational principle of proposed converter is analyzed and verified by the 1.2kW prototype.

• Journal of Power Electronics
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• v.14 no.6
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• pp.1197-1207
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• 2014

Common-mode voltage (CMV) causes overvoltage stress to winding insulation and damages AC motors. CMV with high dv/dt causes leakage currents, which create noise problems for equipment installed near the converter. This study proposes a new pulse-width modulation (PWM) strategy for three-level T-type NPC inverters. This strategy substantially eliminates CMV. The principle for selecting suitable triangle carrier signals for the three-level T-type NPC is described. The proposed method can mitigate the peak value of CMV by 50% compared with the phase disposition pulse-width modulation method. Furthermore, the proposed method exhibits better harmonic spectrum and lower root mean square value for the CMV than those of the reduced-CMV method on the basis of the phase opposition disposition PWM scheme with modulation index higher than 0.5. The proposed modulation can easily be implemented using software without any additional hardware modifications. Both simulation and experimental results demonstrate that the proposed carrier phase-shift PWM method has good output waveform performance and reduces CMV.

• Proceedings of the KIEE Conference
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• 2002.04a
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• pp.90-92
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• 2002

This paper presents an improved C-Dump converter system for switched reluctance motors(SRM). The proposed C-Dump converter derived from the conventional converter for SRM. The proposed converter could overcome the limitation of the conventional C-Dump converter, and could reduce the whole cost of the SRM system since the voltage stress of the dump switch $T_d$ is reduced to $V_{dc}$ when compared with $2V_{dc}$ for the conventional C-Dump converter. The attractive features of the proposed converters are; high-efficient and low-cost, elimination of dump inductor, simple control strategy, smaller size arid light weight. The proposed converter is able to be fast magnetization by $2V_{dc}$, which is sum of the input voltage and charging voltage of the dump capacitor. Also, this topology has many advantages such as freewheeling of phase winding without complex control, reduction of current ripple, reduction of torque ripple, and reduction of switching frequency. Simulation demonstrates the good performance of the converter.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.1099-1101
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• 1999

PJB(Prefabricated Joint Box) is consisted of three major components ; an epoxy unit, a stress relief cone and a spring unit. The insulation structure of PJB is maintained by the interfacial pressure, and the dielectric performance at the interface depends on the interfacial pressure which is regarded as the most important factor for preventing breakdown failure. This experiment was performed to investigate breakdown voltage characteristic and partial discharge patterns under the controlled pressure conditions at the simulated interface. Finally, this paper presents the optimal pressure conditions at the interface by analyasing the PD patterns.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.16 no.11
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• pp.1179-1185
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• 1991

Ultrathin Reoxidized Nitrided Oxides were formed by lamp heated rapid thermal annealing in oxyzen at temperatures of $1050^{\circ}C$-$1100^{\circ}C$ for 20, 40 seconds. The electrical characteristics of ultrathin films were evaluated by leakage current breakdown voltage. TDDB. FN tunneling. Nitridation and reoxidition condition dependence of charge trapping properties. i.e.. the flat band voltage shift $({\Delta}V_{FB})$ and the increase of charge-to-breakdown $(Q_{BD})$ induced by a high field stress where studied. As the results of analysis. rapid thermal reoxidation was achieved striking improvement of dielectric integrity, the charge to breakdown was increased and flat band voltage shift was reduced.