The purpose of this study was to investigate the quality characteristics, antioxidant activities and sensory properties of sponge cake with cabbage powder (CP). Physicochemical and sensory properties of sponge cake with different amount (0%, 5%, 10%, and 15%) of CP were examined. As the increase in the amount of CP addition, the specific gravity and baking loss rate were increased, whereas the color of the cake crumb and crust, volume index and specific volume were decreased (p<0.05). The symmetry and uniformity index of the sponge cake were not affected by the addition of CP (5-15%) (p<0.05). The hardness was significantly increased while by CP addition cohesiveness was decreased (p<0.05). The springiness, gumminess and brittleness were not changed by CP addition (p<0.05). The total polyphenolic, DPPH radical scavenging activities and reducing power were significantly increased by addition of CP at high concentrations (p<0.05). In the sensory evaluation, addition of CP significantly degraded the panel preference related to the color, flavor and texture of the sponge cake. However, the highest point were given to sponge cakes containg 5-10% of CP in taste and overall acceptance (p<0.05). These data suggested that adding 5% of CP is the optimal concentration overall for making sponge cake. However, the sponge cake with 10% of CP is recommended in order to maximize antioxidant activity, the sponge cake was the best when contained 5% CP and the sponge cake prepared with the addition of 10% CP was recommended to use due to its advantages in functional property.
Park, Cheol-Hyeon;O, Jae-Eung;No, Yeong-Gyun;Lee, Sang-Tae;Kim, Mun-Deok
Proceedings of the Korean Vacuum Society Conference
/
2013.02a
/
pp.183-184
/
2013
Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was >99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.
Park, Sang-Kook;Ri, Hyeong-Cheol;Youk, Do-Jin;Sung, Duk-Yong;Kang, Sung-Soo
Journal of Korean Ophthalmic Optics Society
/
v.19
no.4
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pp.471-477
/
2014
Purpose: We have analyzed the transmittance distribution of the ocular lens using local transmittance microscope to investigate the optical homogeneity of the lens. Methods: The transmittance of the laser which is focused on the surface of the ocular lens was measured by using the photo-detector and lock-in amplifier and analyzed. Multi-coated, uncoated, and progressive lenses were analyzed. Results: In the measurement of the progressive lens and a physical stimulated lens, local transmittance microscopy analysis showed a high degree of match with the measurement results through the optical microscope. In addition, the average value of the transmittance is reduced and the standard deviation was increased in the presence of optical defects. In unstimulated lens, there are a large impact on transmittance whether the anti-reflective coating is presence or absence in both the local transmittance microscopy and general transmittance analysis. Conclusions: The distribution of the transmittance measured by local transmission microscopy were changed when the various stimulus is applied to the lenses. These analyzes by local transmission microscopy can be utilized as a way to evaluate or determine the uniformity of the coating film or lens.
Journal of Korean Society of Environmental Engineers
/
v.27
no.7
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pp.777-784
/
2005
The first flush phenomenon is defined as the initial period of road runoff during which the concentration of pollutants was significantly high. Road runoff contains significant loads of micro-particles, heavy metals and organic constituents. There were two major objectives of this study. The first objective was to characterize the road runoff. The second objective was to measure and evaluate particle sire distribution of the road runoff, Stormwater runoff was monitored on two sites of four lane road areas along with traffic volume. A total six storm events were monitored to characterize the road runoff. The quantity of road runoff and quality constituents, including chemical oxygen demand ($COD_{Cr}$), suspended solids(SS), total Kjeldahl nitrogen (TKN), ortho-phosphorus ($PO_4-P$), total phosphorus(TP), heavy metals and particle size distribution were analyzed. The results indicate that the concentration of SS, $COD_{Cr}$, TKN and TP ranges were $45{\sim}2,396\;mg/L$, $40{\sim}931\;mg/L$, $0.1{\sim}19.6\;mg/L$, and $0.2{\sim}25.1\;mg/L$, respectively. The results of the regression analysis between SS and the others constituents shows that $COD_{Cr}$, TP, Cu, Pb were highly correlated. And the results showed that the mean range of particle size and uniformity coefficient for road runoff were $6.7{\sim}23.4{\mu}$ and $6.4{\sim}10.2$, respectively.
Journal of the Institute of Electronics Engineers of Korea SD
/
v.44
no.9
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pp.10-17
/
2007
It opens a new horizon on spintronics for the potential application of MTJ as a universal logic element, to employ the magneto-logic in substitution for the transistor-based logic device. The magneto-logic based on the MTJ element shows many potential advantages, such as high density, and nonvolatility. Moreover, the MTJ element has programmability and can therefore realize the full logic functions just by changing the input signals. This magneto-logic using MTJ elements can embody the reconfigurable circuit to overcome the rigid architecture. The established magneto-logic element has been designed and fabricated on a triple-layer MTJ. We present a novel magneto-logic structure that consists of a single layer MTJ and a current driver, which requires less processing steps with enhanced functional flexibility and uniformity. A 4-bit gray counter is designed to verify the magneto-logic functionality of the proposed single-layer MTJ and the simulation results are presented with the HSPICE macro-model of MTJ that we have developed.
This study was conducted to determine the effect of root zone cooling on growth and quality of turfgrasses including Kentucky bluegrass (Poa pratensis L.‘Nuglade’), perennial ryegrass (Lolium perenne L.‘Accent’), tall fescue (Festuca arundinacea Schreb.‘Pixie’), and Japanese lawngrass (Zoysia japonica Steud.) in simulated athletic field during summer season in Korea. Mineral contents in clippings of turfgrasses grown at different soil mixtures and temperatures were also analyzed. Root zone cooling (approximately 4~6$^{\circ}C$ lower than that of untreated-control) resulted in good uniformity, little disease incidence and higher level of chlorophyll contents in cool-season turfgrasses. The effectiveness of root zone cooling in protecting disease incidence from high temperature stress was the most manifest in perennial ryegrass compared to others. Fresh clipping weight in treatment of root zone cooling was increased approximately 2 times in Kentucky bluegrass and perennial ryegrass, and 2.5 times in tall fescue compared to those of control. There was higher growth rate in a soil mixture composed of 80% peat moss +10% sand +10% soil (v/v/v) than in that of 80% pea moss +20% sand (v/v), Mineral contents of N, P, K, Ca, and Mg in clippings of three species of cool-season turfgrasses were significantly increased in treat-ment of root zone cooling but this was not found in Japanese lawngrass. Results showed that root zone cooling has a benefit in keeping good quality and growth of cool-season turfgrasses in sports field under supraoptimal ambient temperature during summer season.
Basuli, U.;Lee, G.B.;Jang, S.Y.;Oh, J.;Lee, J.H.;Kim, S.C.;Jeon, N.D.;Huh, Y.I.;Nah, C.
Elastomers and Composites
/
v.47
no.4
/
pp.297-309
/
2012
Different amounts of foaming agents were employed in natural rubber(NR)/butadiene rubber(BR) blends to understand the foaming behavior in presence of nano-reinforcing agent, zinc methacrylate (ZMA). The ZMA greatly improved most of the mechanical properties of the rubber foams, however it did not show considerable effect on the cell morphology, such as cell size, density and porosity. It was also observed that the foaming agent concentration affected all the mechanical parameters. When the content of foaming agent was increased, the number of foams was increased leading to a decrease in density of the compounds. But the size and distribution of foams remained unchanged with increased foaming agent. The effect of high styrene-butadiene rubber (HSBR) was also studied. The size of cells became smaller and the cell uniformity was improved with increasing HSBR. The foam rubber compounds showed much efficient energy absorbing capability at higher strains.
Kim, Tae-Heon;;Choe, Sun-Hyeong;Seo, Yeong-Min;Lee, Jong-Cheol;Hwang, Dong-Hun;Kim, Dae-Won;Choe, Yun-Jeong;Hwang, Seong-U;Hwang, Dong-Mok
Proceedings of the Korean Vacuum Society Conference
/
2013.08a
/
pp.289-289
/
2013
While there are plenty of studies on synthesizing semiconducting germanium nanowires (Ge NWs) by vapor-liquid-solid (VLS) process, it is difficult to inject dopants into them with uniform dopants distribution due to vapor-solid (VS) deposition. In particular, as precursors and dopants such as germane ($GeH_4$), phosphine ($PH_3$) or diborane ($B_2H_6$) incorporate through sidewall of nanowire, it is hard to obtain the structural and electrical uniformity of Ge NWs. Moreover, the drastic tapered structure of Ge NWs is observed when it is synthesized at high temperature over $400^{\circ}C$ because of excessive VS deposition. In 2006, Emanuel Tutuc et al. demonstrated Ge NW pn junction using p-type shell as depleted layer. However, it could not be prevented from undesirable VS deposition and it still kept the tapered structures of Ge NWs as a result. Herein, we adopt $C_2H_2$ gas in order to passivate Ge NWs with carbon sheath, which makes the entire Ge NWs uniform at even higher temperature over $450^{\circ}C$. We can also synthesize non-tapered and uniformly doped Ge NWs, restricting incorporation of excess germanium on the surface. The Ge NWs with carbon sheath are grown via VLS process on a $Si/SiO_2$ substrate coated 2 nm Au film. Thin Au film is thermally evaporated on a $Si/SiO_2$ substrate. The NW is grown flowing $GeH_4$, HCl, $C_2H_2$ and PH3 for n-type, $B_2H_6$ for p-type at a total pressure of 15 Torr and temperatures of $480{\sim}500^{\circ}C$. Scanning electron microscopy (SEM) reveals clear surface of the Ge NWs synthesized at $500^{\circ}C$. Raman spectroscopy peaked at about ~300 $cm^{-1}$ indicates it is comprised of single crystalline germanium in the core of Ge NWs and it is proved to be covered by thin amorphous carbon by two peaks of 1330 $cm^{-1}$ (D-band) and 1590 $cm^{-1}$ (G-band). Furthermore, the electrical performances of Ge NWs doped with boron and phosphorus are measured by field effect transistor (FET) and they shows typical curves of p-type and n-type FET. It is expected to have general potentials for development of logic devices and solar cells using p-type and n-type Ge NWs with carbon sheath.
Joung, Hyang Young;Lee, Young Ran;Kim, Mi Seon;Lim, Jin Hee;Shin, Hak Ki;Rhee, Hae Kyung;Park, Sang Kun
FLOWER RESEARCH JOURNAL
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v.19
no.3
/
pp.168-171
/
2011
'Snow Angel' was developed by National Institute of Horticultural & Herbal Science in 2008. A cross was made between phalaenopsis '0361', a white and red lip small-medium variety, and Phalaenopsis 'S98PN1', a white and dark pink lip small-medium variety with pink net pattern. The seedling materials were cultivated to 83 seedling lines from 2000 to 2002. The white and pink lip small-phalaenopsis '99-0404-13' with flowers of round shape was selected by individual selection. The selected line was multiplicated and the growth characteristics were investigated for the first characteristic trial from 2003 to 2007. It was named as 'Wonkyo F2-18' in 2008 and investigated for the second characteristic trial of growth characteristics. The examination was executed for stability, uniformity, yearly reproducibility, and public fancy. It was selected as a high quality cultivar with excellent flower shape and flower color from the selection council of new cultivars for agricultural products, there after it was registered as 'Snow Angel' in 2008.
This paper represents 50 ㎓ narrow band pass filters for fiber optical communication fabricated by dual ion beam sputtering method. We have analyzed the characteristics of the TA$_2$$O_{5}$ and $SiO_2$ single layers in order to optimize the process conditions for the 50 ㎓ narrow band pass filters, and controlled the film thickness uniformity to less than 0.1 nm deviation by dual peak spike filter pre-deposition. We designed and fabricated 50 ㎓ narrow band pass filters that consist of 216 layers including 4 cavities based on quarter wave optical thickness. Class substrates with high thermal expansion coefficients were used to reduce the film stress. Anti-reflection coating at the rear side of the substrate was also needed to reduce the optical thickness errors of the Optical Monitoring System caused by multiple beam interference between the front side and the rear side of substrate. The optical characteristics of this 50 ㎓ narrow band pass filters are insertion loss of 0.40 ㏈, pass band ripple of 0.20 ㏈, and pass bandwidth at -0.5 ㏈ of 0.20 nm. and isolation bandwidth at -25 ㏈ of 0.6 nm, which satisfy specifications of dense WDM system in fiber optical communications.tions.
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