• 한국세라믹학회지
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• 제48권1호
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• pp.1-5
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• 2011

Silicon carbide (SiC) has recently drawn an enormous industrial interest because of its useful mechanical properties such as thermal resistance, abrasion resistance and thermal conductivity at high temperature. RF Thermal plasma (PL-35 Induction Plasma, Tekna CO., Canada) has been utilized for synthesis of high purity SiC powder from cheap inorganic solution (Tetraethyl Orthosilicate, TEOS). It is found that the powders by thermal plasma consist of SiC with free carbon and amorphous silica ($SiO_2$) and, by thermal treatment and HF treatment, the impurities are driven off resulting high purity SiC nano-powder. The synthesized SiC powder lies below 30 nm and its properties such microstructure, phase composition, specific surface area and free carbon content have been characterized by X-ay diffraction (XRD), field emission scanning electron microscopy (FE-SEM), thermogravimetric (TG) and Brunauer-Emmett-Teller (BET).

• Journal of Advanced Marine Engineering and Technology
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• 제40권2호
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• pp.96-101
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• 2016

The thermal management of high-power LED components in an assembly structure is crucial for the stable operation and proper luminous function. This study employs numerical tools to determine the optimum thermal design in LEDs with a heat sink consisting of a crevice-type vapor-chamber heat pipe. The effects of the MCPCB are investigated in terms of the substrate thicknesses on which the LEDs are mounted. Further, different placement configurations in a system module are considered. This study found that for a confined area, a power of 40 W/LED is applicable to a high-power package. Furthermore, the thermal conductivity of dielectric layer materials should ideally be greater than 0.9 W/m.K. The temperature conditions of the vapor chamber in a heat pipe greatly affect the thermal performance of the system. At an offset distance of 9.0 mm and a $2^{\circ}C$ increase in the temperature of the heat pipe, the resulting maximum temperature increase is approximately $1.9^{\circ}C$ for each heat dissipation temperature. Finally, at a thermal conductivity of 0.3 W/m.K, it was found that the total thermal resistance changes dramatically. Above 1.2 W/m.K, the resistance change reduces exponentially.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.1051-1053
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• 1999

In this work, thermal phenomena and temperature rise due to thermal source in electric switchboard were investigated using analytical measures. Electric switchboards are assemblies of panels on which are mounted switches, circuit breakers, high current busbars, meter, fuses and terminals essential to the operation of electric equipment. It is very difficult to predict the temperature rise in switchboard due to the existence of several heat sources. To overcome this situations, we focused on the eddy current distribution on the panel of switchboard caused by high current busbars as a fundamental basis. And thermal sources including busbar and switchgear have been considered. Furthermore, thermal transfer phenomena in switchboard was considered theoretically. Finally, three-dimensional thermal model for eddy current analysis has been adopted and FEM analysis was conducted. As a result, three-dimensional numerical analysis found to be applicable to the analysis of thermal phenomena in switchboard.

• 한국응용과학기술학회지
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• 제27권4호
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• pp.552-558
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• 2010

Zinc soap and Zn/Ba mixed metal soap were synthesized and PVC plastisol with mixed metal soap and various costabilizers were also synthesized with good structures and characterized by IR and $^1H$-NMR. The IR spectrums and $^1H$-NMR spectrums of the synthesized soaps were in very good accordance with the structures proposed by earlier workers. In using phosphite as a costabilizer, TIDP phosphite was shown to be the excellent thermal stabilization effect at the low temperature and TNPP phosphite was shown to be the excellent thermal stabilization effect at the high temperature. In case of antioxidant, it was revealed that antioxidant was not effective in the low temperature thermal stabilization effect while highly effective in the high temperature thermal stability. $NaClO_4$ solution with sorbitol solvent had the best thermal stabilization effect among $NaClO_4$ solution series at low and high temperature.

• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2000년도 추계학술발표대회 논문집
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• pp.34-37
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• 2000

The effect of novel N-crotyl-N,N-dimethyl-4-methylanilinium hexafluroantimonate (CMH) curing agent on cure behavior and thermal properties of DGEBA epoxy cationic system was investigated. From DSC measurements of DGEBA/CMH system, it was shown that this system exhibits an excellent thermal latent characteristic in a given temperature and reveals complex cure behavior as indicated by multiple exotherms. The conversion and conversion rate of DGEBA/CMH system increased with increasing the concentration of initiator due to high activity of CMH. Viscoelastic properties during gel formation of DGEBA with CMH were investigated by rheological techniques under isothermal condition. The gel time obtained from the modulus crossover. point t(G')=G", was affected by high curing temperature and concentration of CMH, resulting in high degree of network formation in cationic polymerization. The thermal stabilities were discussed in terms of the activation energy for decomposition and thermal factors determined from TGA measurements.ents.

• 한국세라믹학회지
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• 제49권6호
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• pp.523-527
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• 2012

Silicon carbide (SiC) has recently drawn an enormous amount of industrial interest due to its useful mechanical properties, such as its thermal resistance, abrasion resistance and thermal conductivity at high temperatures. In this study, RF thermal plasma (PL-35 Induction Plasma, Tekna CO., Canada) was utilized for the synthesis of high-purity SiC powder from an organic precursor (hexamethyldisilazane, vinyltrimethoxysilane). It was found that the SiC powders obtained by the RF thermal plasma treatment included free carbon and amorphous silica ($SiO_2$). The SiC powders were further purified by a thermal treatment and a HF treatment, resulting in high-purity SiC nano-powder. The particle diameter of the synthesized SiC powder was less than 30 nm. Detailed properties of the microstructure, phase composition, and free carbon content were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), a thermogravimetric (TG) analysis, according to the and Brunauer-Emmett-Teller (BET) specific surface area from N2 isotherms at 77 K.

• 한국초전도ㆍ저온공학회논문지
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• 제23권3호
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• pp.14-19
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• 2021

The reduction of carbon dioxide emissions becomes a global issue, the main source of carbon dioxide emissions in the Asian region is the energy conversion sector, especially coal-fired power plants. We are working to develop technologies that will at least limit the increase in carbon dioxide emissions from the thermal power plants as one way to reduce carbon dioxide emissions. Our research aims to reduce carbon dioxide emissions by removing iron oxide scale from the feedwater system of thermal power plants using a superconducting high-gradient magnetic separation (HGMS) system, thereby reducing the loss of power generation efficiency. In this paper, the background of thermal power plants in Asia is outlined, followed by a case study of the introduction of a chemical cleaning line at an actual thermal power plant in Japan, and the possibility of introducing it into the thermal power plants in China based on the results.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 1999년도 춘계학술발표회요약집
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• pp.158-158
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• 1999

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.1344-1347
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• 2004

Recently, Study on measuring property of a micro thin film(nm ～ hundreds of ) under Thermal Mechanical loading. In this work, We perform tensile test at high temperature(1200 ) to investigate mechanical properties of alumina TGO formed under Thermal Barrier Coating. We used Digital Image Correlation method for measuring displacement, and We presented a method of tensile test for thin film at high temperature.

• 한국진공학회지
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• 제1권1호
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• pp.190-197
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• 1992

In this study we have investigated physical and electrical properties of high temperature oxide (HTO) thin film using dichlorosilane (DCS) gas. This film had low etch rate and excellent step coverage, and its characteristics of Si-O bond were similar to those of thermal oxide. I-V curves also showed similar electrical properties to those of thermally grown oxide (SiO2) while time dependent dielectric breakdown (TDDB) results revealed 1/4 value of thermal oxide. However, defect density was measured to be much lower value than that of thermal oxide.