• Asian Pacific Journal of Cancer Prevention
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• v.16 no.8
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• pp.3579-3586
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• 2015

Geographic information system (GIS) technology has useful applications for epidemiology, enabling the detection of spatial patterns of disease dispersion and locating geographic areas at increased risk. In this study, we applied GIS technology to characterize the spatial pattern of mortality due to liver cancer in the autonomous region of Guangxi Zhuang in southwest China. A database with liver cancer mortality data for 1971-1973, 1990-1992, and 2004-2005, including geographic locations and climate conditions, was constructed, and the appropriate associations were investigated. It was found that the regions with the highest mortality rates were central Guangxi with Guigang City at the center, and southwest Guangxi centered in Fusui County. Regions with the lowest mortality rates were eastern Guangxi with Pingnan County at the center, and northern Guangxi centered in Sanjiang and Rongshui counties. Regarding climate conditions, in the 1990s the mortality rate of liver cancer positively correlated with average temperature and average minimum temperature, and negatively correlated with average precipitation. In 2004 through 2005, mortality due to liver cancer positively correlated with the average minimum temperature. Regions of high mortality had lower average humidity and higher average barometric pressure than did regions of low mortality. Our results provide information to benefit development of a regional liver cancer prevention program in Guangxi, and provide important information and a reference for exploring causes of liver cancer.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.686-690
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• 2010

$TiO_2$ nanowires were self-catalytically synthesized on bare Si(100) substrates using metallorganic chemical vapor deposition. The nanowire formation was critically affected by growth temperature. The $TiO_2$ nanowires were grown at a high density on Si(100) at $510^{\circ}C$, which is near the complete decomposition temperature ($527^{\circ}C$) of the Ti precursor $(Ti(O-iPr)_2(dpm)_2)$. At $470^{\circ}C$, only very thin (< $0.1{\mu}m$) $TiO_2$ film was formed because the Ti precursor was not completely decomposed. When growth temperature was increased to $550^{\circ}C$ and $670^{\circ}C$, the nanowire formation was also significantly suppressed. A vaporsolid (V-S) growth mechanism excluding a liquid phase appeared to control the nanowire formation. The $TiO_2$ nanowire growth seemed to be activated by carbon, which was supplied by decomposition of the Ti precursor. The $TiO_2$ nanowire density was increased with increased growth pressure in the range of 1.2 to 10 torr. In addition, the nanowire formation was enhanced by using Au and Pt catalysts, which seem to act as catalysts for oxidation. The nanowires consisted of well-aligned ~20-30 nm size rutile and anatase nanocrystallines. This MOCVD synthesis technique is unique and efficient to self-catalytically grow $TiO_2$ nanowires, which hold significant promise for various photocatalysis and solar cell applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.9
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• pp.916-923
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• 2004

In this paper, the strained Si$_{0.9}$Ge$_{0.1}$ epitaxial layers grown by a reduced pressure chemical vapor deposition (RPCVD) on Si (100) were characterized by Rutherford backscattering spectrometery (RBS) for the fabrication of an SiGe heterojunction bipolar transistor(HBT). RBS spectra of the ${Si}_0.9{Ge}_0.1$epitaxial layers grown on the Si substrates which were implanted with the phosphorus (P) ion and annealed at a temperature between $850^{\circ}C$ - $1000^{\circ}C$ for 30min were analyzed to investigate the post thermal annealing effect on the grown${Si}_0.9{Ge}_0.1$epitaxial layer quality. Although a damage of the substrates by P ion-implantation might be cause of the increase of RBS yield ratios, but any defects such as dislocation or stacking fault in the grown ${Si}_0.9{Ge}_0.1$ epitaxial layer were not found in transmission electron microscope (TEM) photographs. The post high temperature rapid thermal annealing (RTA) effects on the crystalline quality of the ${Si}_0.9{Ge}_0.1$ epitaxial layers were also analyzed by RBS. The changes in the RBS yield ratios were negligible for RTA a temperature between $900^{\circ}C$ - $1000^{\circ}C$for 20 sec, or $950^{\circ}C$for 20 sec - 60 sec. A SiGe HBT array shows a good Gummel characteristics with post RTA at $950^{\circ}C$ for 20 sec.sec.sec.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.168-168
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• 2010

Transparent conduction oxides (TCOs) films is extensively reported for optoelectronic devices application such as touch panels, solar cells, liquid crystal displays (LCDs), and organic light emitting diodes(OLEDs). Among the many TCO film, indium tin oxide(ITO) is in great demand due to the growth of flat panel display industry. However, indium is not only high cost but also its deposits dwindling. Therefore, many studies are being done on the transparent conductive oxides(TCOs). We fabricated a target of IZTO(In2O3:ZnO:SnO2=70:15:15 wt.%) reduced indium. Then, IZTO thin films were deposited on glass substrates by pulsed DC magnetron sputtering with various oxygen flow ratio. The substrate temperature was fixed at the room temperature. We investigated the electrical, optical, structural properties of IZTO thin films. The electrical properties of IZTO thin films were dependent on the oxygen partial pressure. As a result, the most excellent properties of IZTO thin films were obtained at the 3% of oxygen flow rate with the low resistivity of $7.236{\times}10^{-4}{\Omega}cm$. And also the optical properties of IZTO thin films were shown the good transmittance over 80%. These IZTO thin films were used to fabricated organic light emitting diodes(OLEDs) as anode and the device performances studied. The OLED with an IZTO anode deposited at optimized deposition condition showed good brightness properties. Therefore, IZTO has utility value of TCO electrode although it reduced indium and we expect it is possible for the IZTO to apply to flexible display due to the low processing temperature.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.36 no.4
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• pp.395-403
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• 2012

This is direct bonding many of the metal bumps between FPCB and HPCB substrate. By using an ultrasonic horn mounted on an ultrasonic bonding machine, it is possible to bond gold pads onto the FPCB and HPCB at room temperature without an adhesive like ACA or NCA and high heat and solder. This ultrasonic bonding technology minimizes damage to the material. The process conditions evaluated for obtaining a greater bonding strength than 0.6 kgf, which is commercially required, were 40 kHz of frequency; 0.6MPa of bonding pressure; and 0.5, 1.0, 1.5, and 2.0 s of bonding time. The peel off test was performed for evaluating bonding strength, which was found to be more than 0.80 kgf.

• Journal of Korea Foundry Society
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• v.31 no.1
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• pp.11-17
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• 2011

The effect of CaO addition to AM60B Mg alloy on tensile properties has been investigated, with focus on strength and ductility at room and elevated temperatures. The 0.25-0.65wt% CaO added AM60B Eco-Mg diecastings were prepared by high pressure die casting using Buhler 1,450-ton cold chamber machine without $SF_6$ and $SO_2$ gases. The microstructures and tensile properties of each alloy were tested. The results show that the grains of AM60B are refined and the mechanical properties increase with CaO addition at room temperature. The improvement of strength and ductility is prominent at 0.45-0.55wt% CaO addition. Also, improved mechanical properties are maintained at elevated temperature of $150^{\circ}C$. CaO addition results in $Al_2Ca$ phase formation mostly on the grain boundaries. This phase leads to the refinement of grain structures and improvement of ductility as well as strength. The suppression of ${\beta}-Mg_{17}Al_{12}$ phase as well as the decrease of fracture surface porosity and other casting defects caused by melt cleanliness also contribute to the enhancement of mechanical properties of AM60B Eco-Mg at room and elevated temperature.

• Transactions on Electrical and Electronic Materials
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• v.6 no.6
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• pp.245-248
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• 2005

The physical and electrical properties of polycrystalline $\beta$-SiC were studied according to different nitrogen doping concentration. Nitrogen-doped SiC films were deposited by LPCVD(1ow pressure chemical vapor deposition) at $900^{\circ}C$ and 2 torr using $100\%\;H_2SiCl_2$ (35 sccm) and $5 \%\;C_2H_2$ in $H_2$(180 sccm) as the Si and C precursors, and $1\%\;NH_3$ in $H_2$(20-100 sccm) as the dopant source gas. The resistivity of SiC films decreased from $1.466{\Omega}{\cdot}cm$ with $NH_3$ of 20 sccm to $0.0358{\Omega}{\cdot}cm$ with 100 sccm. The surface roughness and crystalline structure of $\beta$-SiC did not depend upon the dopant concentration. The average surface roughness for each sample 19-21 nm and the average surface grain size is 165 nm. The peaks of SiC(111), SiC(220), SiC(311) and SiC(222) appeared in polycrystalline $\beta$-SiC films deposited on $Si/SiO_2$ substrate in XRD(X-ray diffraction) analysis. Resistance of nitrogen-doped SiC films decreased with increasing temperature. The variation of resistance ratio is much bigger in low doping, but the linearity of temperature dependent resistance variation is better in high doping. In case of SiC films deposited with 20 sccm and 100 sccm of $1\%\;NH_3$, the average of TCR(temperature coefficient of resistance) is -3456.1 ppm/$^{\circ}C$ and -1171.5 ppm/$^{\circ}C$, respectively.

• Journal of the Korean Society of Tobacco Science
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• v.12 no.2
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• pp.59-65
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• 1990

In order to predict the shelf-life of cigarettes packaged in typical flexible film under conditions of various temperature, relative humidity and sealing degree, a computer iterative technique was used. Although there were some significant differences at initial equilibrium relative humidity(55%), the experimental results agree fairly well with predictions following the student's t test($\alpha$=0.01) in most cases. Essentially, the higher the storage temperature, the shorter the shelf-life of the cigarette product. The bigger the differences from the initial equilibrium relative humidity, the shorter the storage period of the cigarette. Moisture transfer through the film at relatively high temperature gave higher confidence. The sealing degree, one of the storage parameters, appeared to be a major influencing factor to shelf-life. Slopes($\beta$) of the temp., sealing degree and %rh of the dependent variable to shelf life were 0.49, -0.39 and -0, 28 respectively, when analysed by multiple regression of SPSS software. Below 600m1/min sealing decree of the packed cigarette through the sealing Position at 30mmH20 differential pressure, the shelf-life could be increased by more than six months.

• Journal of the Society of Naval Architects of Korea
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• v.56 no.6
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• pp.515-522
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• 2019

Since Liquefied Natural Gas (LNG) is normally carried at 1.1 bar pressure and at -163℃, special Cargo Containment System (CCS) are used. As LNG carrier is becoming larger, typical LNG insulation systems adopt a method to increase the thickness of insulation panel to reduce sloshing load and Boil-off Rate (BOR). However, this will decrease LNG cargo volume and increase insulation material costs. In this paper, silica aerogel, glass bubble were synthesized in polyurethane foam to increase volumetric efficiency by improving mechanical and thermal performance of insulation. In order to increase dispersibility of particles, ultrasonic dispersion was used. Dynamic impact test, quasi-static compression test at room temperature (20℃) and cryogenic temperature (-163℃) was evaluated. To evaluate the thermal performance, the thermal conductivity at room temperature (20℃) was measured. As a result, specimens without ultrasonic dispersion have a little effect on strength under the compressive load, although they show high mechanical performance under the impact load. In contrast, specimens with ultrasonic dispersion have significantly increased impact strength and compressive strength. Recently, as the density of Polyurethane foam (PUF) has been increasing, these results can be a method for improving the mechanical and thermal performance of insulation panel.

• Journal of the Korean Recycled Construction Resources Institute
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• v.3 no.2
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• pp.165-170
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• 2015

Pipe-rack structures supporting high temperature and pressure are of great importance to ensure the safety of the operation of the plants. If some damage occurred in the pipe-rack structure, the facilities not only bring damage to the commercial property, but also result in economic losses. Specially, since pipe-rack structures are exposed to various environmental conditions, it is essential to evaluate the thermal behavior of the structure caused by environmental conditions for the appropriate design and maintenance of the pipe-rack structure. Thus, based on a selected, typical pipe-rack structure, a thermal-stress coupled analysis was conducted to evaluate the temperature distributions and thermal stresses of the structure. For this, this study accounted for the operating condition of the pipe and the effect of environmental conditions, Yeosu in South Korea and Saudi Arabia in the Middle East. The results of the study showed the need for accounting for a variance in the environmental factors to evaluate the thermal behavior of the pipe-rack structure along with the working condition of pipe.