• Journal of Sensor Science and Technology
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• v.30 no.4
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• pp.218-222
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• 2021

Wearable multi-sensors based on nanocrystals have attracted significant attention, and studies on patterning technology to implement such multi-sensors are underway. Conventional patterning processes may affect material properties based on high temperatures and harsh chemical conditions. In this study, we developed an inkjet printing technique that can overcome these drawbacks through the application of patterning processes at room temperature and atmospheric pressure. Nanocrystal-based ink is used to adjust properties efficiently. Additionally, the viscosity and surface tension of the solvents are investigated and optimized to increase patterning performance. In the patterning process, the electrical, electrothermal, and electromechanical properties of the nanocrystal pattern are controlled by the ligand exchange process. Experimental results demonstrate that a multi-sensor with a temperature coefficient of resistance of 3.82 × 10^-3 K^-1 and gauge factor of 30.6 can be successfully fabricated using one-step inkjet printing.

• Journal of the Korean Institute of Gas
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• v.18 no.4
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• pp.13-20
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• 2014

In natural gas distribution system, gas pressure is regulated correspond to requirement using throttle valve which is releasing huge pressure energy as useless form. The waste pressure can be recovered by using turbo machinery devices such as a turbo expander. In this process, excessive temperature drop occurs due to Joule-Thompson effect during the expansion process. Installing natural gas boiler before or after the turbo expander prevents temperature drop. Fuel cell or gas engine hybrid system further improve the efficiency, but 1~2% of total transporting natural gas is used for operating the hybrid system. In this study, a heat pump system is proposed as a preheating device which can be operated without using transporting natural gas. Thermodynamic analysis on evaporating and condensing temperatures and refrigerants is conducted. Results show that R717 is proper refrigerant for the hybrid system with high COP and low turbine work within the defined operating conditions. In domestic usage in Korea, the heat pump system has more economic feasibility owing to natural gas being imported with a high price of LNG form.

• Food Science and Preservation
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• v.12 no.3
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• pp.204-208
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• 2005

This study was conducted to investigate the effects of temperature and packaging on the quality characteristics of hot-water extract from Acanthopanax senticosus. The herb samples, ground and sifted($8{\sim}20$ mesh), were extracted by a boiling($100^{\circ}C$) water under the atmospheric pressure for 2 hrs. The extract was packed with out nylon PE(0.08 mm) pouch and kept under the condition(40 and $60^{\circ}C$) for 10 days. The reduction of turbidity, pH, polyphenol amount and DPPH radical scavenging activity of extract were retarded by packaging under the low temperature. Titratable acidity was increased with packaging at high temperature. Soluble solid content was not affected by packaging and temperature condition. The changes of quality characteristics followed the first-order reaction rate. Arrhenius equation was applied to determine the effects of temperature on the reaction rate constant, showing high $R^2$. These results suggested that packaging under lower temperature can be utilized for maintaining the quality of A senticosus extract.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.422-448
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• 1996

Low-temperature epitaxial growth of Si and SiGe layers of Si is one of the important processes for the fabrication of the high-speed Si-based heterostructure devices such as heterojunction bipolar transistors. Low-temperature growth ensures the abrupt compositional and doping concentration profiles for future novel devices. Especially in SiGe epitaxy, low-temperature growth is a prerequisite for two-dimensional growth mode for the growth of thin, uniform layers. UHV-ECRCVD is a new growth technique for Si and SiGe epilayers and it is possible to grow epilayers at even lower temperatures than conventional CVD's. SiH and GeH and dopant gases are dissociated by an ECR plasma in an ultrahigh vacuum growth chamber. In situ hydrogen plasma cleaning of the Si native oxide before the epitaxial growth is successfully developed in UHV-ECRCVD. Structural quality of the epilayers are examined by reflection high energy electron diffraction, transmission electron microscopy, Nomarski microscope and atomic force microscope. Device-quality Si and SiGe epilayers are successfully grown at temperatures lower than 600℃ after proper optimization of process parameters such as temperature, total pressure, partial pressures of input gases, plasma power, and substrate dc bias. Dopant incorporation and activation for B in Si and SiGe are studied by secondary ion mass spectrometry and spreading resistance profilometry. Silicon p-n homojunction diodes are fabricated from in situ doped Si layers. I-V characteristics of the diodes shows that the ideality factor is 1.2, implying that the low-temperature silicon epilayers grown by UHV-ECRCVD is truly of device-quality.

• Journal of Energy Engineering
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• v.5 no.1
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• pp.50-55
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• 1996

A numerical simulation on a primary calcinator of porcelain was performed with using Fluent to calculate the heat efficiency by studying velocity vector and temperature profile according to variables such as the location of outlet and porcelain. Control-Volume based Finite Difference Method and Up-wind scheme are used for discretization of differential equation. SIMPLEC Algorithm and standard k-$\varepsilon$ turbulent model are selected to resolve the pressure-velocity coupling and the turbulent. The result of simulation showed that the whole velocity vector field in a calcinator was varied greatly according to the location of outlet. But the whole temperature profile at each zone was still high regardless of the location of outlet because of the radiation. But the temperature of a case with a outlet at sidepart of preheating or cooling zone was little high compared to the case with a outlet on the top of preheating zone. The velocity vector field and temperature profile in a calcinator were almost not affected by the location of porcelain, but the temperature inside a porcelain was much affected according to the place where it was located. The heat efficiency in a calcinator was 44.6% and the gas temperature in the outlet was about 1000 K.

• Journal of the Korean Society of Combustion
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• v.18 no.2
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• pp.32-41
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• 2013

This study presents both experimental and numerical investigation of ignition delay time of n-heptane and n-butanol binary fuel. The $O_2$ concentration in the mixture was set to 9-10% to make high exhaust gas recirculation( EGR) rate condition which leads low NOx and soot emission. Experiments were performed using a rapid compression machine(RCM) at compressed pressure 20bar, several compressed temperature and three equivalence ratios(0.4, 1.0, 1.5). In addition, a numerical study on the ignition delay time was performed using CHEMKIN codes to validate experimental results and predict chemical species in the combustion process. The results showed that the ignition delay time increased with increasing the n-butanol fraction due to a decrease of oxidation of n-heptane at the low temperature. Moreover, all of the binary fuel mixtures showed the combustion characteristics of n-heptane such as cool flame mode at low temperature and negative-temperature-coefficient(NTC) behavior. Due to the effect of high EGR rate condition, the operating region is reduced at lean condition and the ignition delay time sharply increased compared with no EGR condition.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• Journal of the Korean Electrochemical Society
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• v.13 no.4
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• pp.283-289
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• 2010

A two-dimensional isothermal model has been employed for numerical simulations of a high temperature hydrogen fuel cell with proton exchange membrane. The model is validated with existing experimental data and used for examination on the effects of various operating conditions on the fuel cell performance. The present numerical results show that the cell performance increases with increasing exchange current density, ion conductivity of the membrane, inlet gas flow rate as well as operating pressure. Also, higher porosity of gas diffusion layer (GDL) results in higher cell performance due to enhancement of the diffusion through the GDL, where the cathode GDL porosity more influences on the performance as compared with the anode one.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.3 no.1
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• pp.31-40
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• 2005

High temperature - high pressure apparatus was developed to simulate nickel fewite corrosion products which were main compositions of the radioactive crud in the nuclear power plant. Corrosion product similar to the crud was obtained by a tube accumulator system. Nickel alloy (Inconel 690) and carbon steel (SA106 Gr. C) were corroded at 270 $\^{circ}C$ in the corrosion product generator. Ni ions and Fe ions dissolved by corrosion reaction were able to be transported to the accumulator because the crud generation mechanism was the solubility change with temperature. To evaluate the properties of simulated corrosion products, scanning electron microscope (SEM) observation and EDAX analysis were performed. SEM observation of corrosion product showed the needlelike or crystal structure of oxide depending on precipitating location. The crystal oxide was the nickel ferrite, which was similar to the crud in nuclear power plants.

• Food Science of Animal Resources
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• v.18 no.2
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• pp.176-184
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• 1998

The objective of this study was to investigate the effects of freezing rate on aroma retention and to examine the mechanism of aroma retention during freeze drying process. Our experiments were carried out with self-manufactured freeze-dryer. Gelatin gels (2% w / w, 80${\times}$20mm) containing diacetyl(2mg/ml) were frozen unidirectionally (Neumann's model) from the bottom at -45, -30, -20, and -15$^{\circ}C$ and followed with freeze-drying. Under the upper conditions we measured freezing rate and the change of temperature and pressure during freeze drying. Freeze-dried gelatins were cut horizontally into 5 mm thickness from the bottom measured and diacetly contents. Besides, we observed the effect of the relative humidity of the diacetyl contents freeze-dried gelatin during storage. The retained diacetyl content was increased at high freezing temperature and in order of 0∼5, 5∼10, 10∼15, 15∼20 mm section from the bottom of the sample. It was observed that the retained diacetyl content was high in 15∼20 mm section. The retained diacetyl content and freeze-dried gelatin stored in the condition of high relative humidity was decreased significantly but in the low relative humidity case, was it decreased in small amount. The results of our experiment resents that the low temperature freezing and low humidity storing condition is effective for preserving aroma compound in food.