• 대한금속재료학회지
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• 제48권3호
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• pp.262-267
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• 2010

$LiNi_{1-x}Mg_xO_2$(x=0, 0.025, 0.05, 0.075, 0.1) samples were synthesized by the solid-state reaction method. The crystal structure was analyzed by X-ray powder diffraction and Rietveld refinement. $LiNi_{1-x}Mg_xO_2$samples give single phases of hexagonal layered structures with a space group of R-3m. The calculated cation-anion distances and angles from the Rietveld refinement were changed with Mg contents in $LiNi_{1-x}Mg_xO_2$. The thicknesses of $NiO_2$ slabs were increased and the distances between the $NiO_2$ slabs were decreased with the increase in Mg contents in the samples. The electrical conductivities of sintered $LiNi_{1-x}Mg_xO_2$ samples were around $10^{-2}$ S/cm at room temperature. The electrochemical performances of $LiNi_{1-x}Mg_xO_2$were evaluated by coin cell test. Compared to $LiNiO_2$, $LiNi_{0.95}Mg_{0.05}O_2$ exhibited improved high-rate capability and cyclability due to the well-ordered layered structure by doping of Mg ion.

• 한국진공학회지
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• 제15권5호
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• pp.458-464
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• 2006

본 연구에서는 초고진공 (UHV; ultra high vacuum) 분자선 에피성장 (MBE; molecular beam epitaxy) 시스템의 제작과 성능연구가 성공적으로 이루어졌다. 초고진공 용 분자선 에피성장 시스템을 국산화개발 및 제작하여, 장비에 관한 성능 테스트를 하게 되었다. 본 장비의 진공도가 $2X10^{10}$ Torr에 도달함을 확인하였고, 시편 가열모듈(substrate heating module)이 $1,100^{\circ}C$까지 가열됨을 확인할 수 있었으며, ZnSe/GaAs(001)의 증착특성을 SEM (scanning electron microscope), AFM (atomic force microscope), XRD (x-ray diffraction), PL (photoluminescence) 등으로 조사하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.141-141
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• 2010

The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.

• Food Science and Biotechnology
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• 제16권5호
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• pp.832-835
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• 2007

Moisture content of normal, waxy, and high amylose com starches was adjusted to 10-35%, and irradiated in a microwave oven. The effect of microwave irradiation on the crystalline structure of starch was measured by using a differential scanning calorimetry (DSC), and X-ray diffractometry. Pasting viscosity profile was also determined by using a rapid viscoanalyzer (RVA). For all the 3 types of starches tested, the rate of temperature increase by the microwave irradiation was faster and more rapidly reached the maximum temperature of the pressure bomb ($120^{\circ}C$) when the moisture content was higher. X-ray diffraction and DSC data revealed that the microwave irradiated starch underwent partial disruption of crystalline structure. RVA studies showed that the irradiation caused significant reductions in maximal viscosity and breakdown, whereas pasting temperature was increased. Overall trends revealed that the microwave irradiation on the starch containing limited moisture content (less than 35%) provided the effects similar to the heat moisture treatment. These effects became more significant when the moisture content was higher. Compared to waxy com starch, normal, and high amylose com starches appeared to be more susceptible to the microwave irradiation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1252-1254
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• 1997

Direct methanol fuel cell based on a proton-exchange membrane electrolyte was investigated. 60% Pt-Ru/C and 60%Pt/C catalysts were employed for methanol oxidation and oxygen reduction, respectively. Morphologies of the catalysts were investigated by x-ray power diffraction, energy dispersive x-ray spectroscopy, and transmission microscopy. Electrochemical characteristics of the catalysts were tested by using cyclic voltametry technique. I-V characteristics of the fuel cell were tested by changing methanol concentration, temperature, and Nafion type as a proton-exchange membrane electrolyte. AC impedance technique was used to investigate the electrochemical performance of the fuel cell. The performance of single cell was enhance with increasing cell temperature. High operation temperature attributed to the combined effects of the reduction of ohmic resistance and polarization. High cell voltage was obtained from the concentration of 205M methanol. With Nafion 112, a current density of $230mA/cm^2$ at 0.55V was obtained from the concentration of 2.5M methanol.

• 한국재료학회지
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• 제24권7호
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• pp.370-374
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• 2014

Inorganic pigments have high thermal stability and chemical resistance at high temperature. For these reasons, they are used in clay, paints, plastic, polymers, colored glass and ceramics. $CoAl_2O_4$ nano-powder was synthesized by reverse-micelle processing the mixed precursor(consisting of $Co(NO_3)_2$ and $Al(NO_3)_3$). The $CoAl_2O_4$ was prepared by mixing an aqueous solution at a Co:Al molar ratio of 1:2. The average particle size, and the particle-size distribution, of the powders synthesized by heat treatment (at 900; 1,000; 1,100; and $1,200^{\circ}C$ for 2h) were in the range of 10-20 nm and narrow, respectively. The average size of the synthesized nano-particles increased with increasing water-to-surfactant molar ratio. The synthesized $CoAl_2O_4$ powders were characterized by X-ray diffraction analysis(XRD), field-emission scanning electron microscopy(FE-SEM) and color spectrophotometry. The intensity of X-ray diffraction of the synthesized $CoAl_2O_4$ powder, increased with increasing heating temperature. As the heating temperature increased, crystal-size of the synthesized powder particles increased. As the R-value(water/surfactant) and heating temperature increased, the color of the inorganic pigments changed from dark blue-green to cerulean blue.

• 한국진공학회지
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• 제7권s1호
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• pp.57-77
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• 1998

Heteroepitaxial $Y_2O_3$ films were grown on a Si(111) substrate by ionized cluster beam deposition(ICBD) in ultra high vacuum, and its qualities such as crystllitnity, film stress, and morphological characteristics were investigated using the various measurement methods. The crystallinity was investigated by x-ray diffraction (XRD) and reflection high energy electron diffraction (RHEED). Interface crystallinity was also examined by Rutherford backscattering spectroscopy(RBS) channeling, transmission electron microscopy(TEM). The stress of the films was measured by RBS channeling and XRD. Surface and interface morphological characteristics were investigated by atomic force microscopy (AFM) and x-ray scattering method. Comparing the interface with the surface characteristics, we can conclude that many defects at the interface region were generated by interface reaction between the yttrium metal and SiO2 layer and by ion beam characteristic such as shallow implantation, so that they influenced the film qualities. The film quality was dominantly depended on the characteristic temperature range. In the temperature range from $500^{\circ}C$ to $600^{\circ}C$, the crystallinity was mainly improved and the surface roughness was drastically decreased. On the other hand, in the temperature range from $600^{\circ}C$ to $700^{\circ}C$, the compressive stress and film density were dominantly increased, and the island size was more decreased. Also the surface morphological shape was transformed from elliptical shape to triangular. The film stress existed dominantly at the interface region due to the defects generation.

• 한국자기학회지
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• 제19권4호
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• pp.121-125
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• 2009

비정질 $Ge_{1-x}Mn_x$ 박막을 $400^{\circ}C$에서 $700^{\circ}C$까지 온도범위에서 각 3분씩 고진공챔버($10^{-8}$ torr)에서 열처리하였고, as-grown 시료와 열처리한 시료의 전기적 특성과 자기수송특성을 연구하였다. 성분함량은 energy dispersive X-ray spectroscopy(EDS)와 x-ray photoelectron spectroscopy(XPS)로 측정하였으며, 박막의 구조분석은 x-ray diffractometer(XRD)와 transmission electron microscopy(TEM)를 이용하였다. 자성특성은 여러 범위의 자기장에서 Magnetic property measure system(MPMS)를 이용하였다. 박막의 전기적 특성은 standard four-point probe와 Physical property measurement system(PPMS)로 측정하였으며, van der Pauw 방법을 사용하여 Anomalous Hall effect를 측정하였다. X-ray 회절 패턴 분석을 통해 $500^{\circ}C$에서 3분 동안 열처리한 시료는 여전히 비정질 상태인 것을 알 수 있었으며, $600^{\circ}C$의 열처리 온도에서 결정화를 확인할 수 있었다. as-grown $Ge_1$_$_xMn_x$ 박막과 열처리한 $Ge_{1-x}Mn_x$ 박막을 온도에 따른 비저항 값의 변화를 측정하였고, 반도체의 특성을 보이는 것을 확인할 수 있었다. 또한 열처리 온도가 높을수록 비저항도 증가하는 것을 관찰할 수 있었다. $700^{\circ}C$에서 열처리한 $Ge_1$_$_xMn_x$ 박막은 저온에서 negative magnetoresistance(MR)을 확인할 수 있었고, MR ratio는 10 K에서 약 8.5 %를 보였다. 모든 MR 그래프에서 curve의 비대칭을 확인 할 수 있었으며, anomalous Hall Effect는 약하지만 250 K까지 관측이 되었다.

• 한국진공학회지
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• 제7권4호
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• pp.328-333
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• 1998

저압 유기금속 화학증착법을 이용하여 (001) InP 기판 위에 격자 일치된 InAlAs 에 피층 성장 결과 620~$700^{\circ}C$범위에서 성장 온도가 증가할수록 산소 유입량의 감소 때문으로 생각되는 광학적 성질의 향상이 관찰되었으나 $750^{\circ}C$이상의 고온에서는 InP완충층의 열화에 의한 결정성의 감소가 발견되었다. 또한, AsH3의 유량이 증가됨에 따라 성장된 InAlAs층의 Al함유량이 증가하는 현상이 관찰되었고, 이는 Al-As와 In-As의 bond strength 차이로 설 명하였다. InGaAs/InAlAs 단일 양자우물구조에서 측정된 우물두께에 따른 photoluminescence peak energy는 계산 값과 잘 일치하였고, high resolution x-ray diffraction 측정을 통하여 뚜렷한 satellite peak와 fine thickness fringe들이 관찰되는 우수 한 계면특성을 가지는 다중 양자우물구조가 성장됨을 확인하였다.

• 한국신뢰성학회지:신뢰성응용연구
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• 제16권1호
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• pp.41-47
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• 2016

Purpose: The purpose of this study was to evaluate electrical and structural degradation of flexible CIGS sollar cell exposed to high temperature and humid atmosphere. Method: Accelerated degradation was performed for various time under $85^{\circ}C/85%RH$ and then electrical and structural properties were analyzed by 4-point probe method, scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and X-ray diffraction (XRD). Results: Sheet resistance of the top ITO layer increased with exposure time to the high temperature and humid atmosphere. Blunting of the protrusion morphology of ITO layer was observed for the degraded specimen, while no phase change was detected by XRD. Oxygen was detected at the edge area after 300 hours of exposure. Conclusion: Increase in electrical resistance of the degraded CIGS solar cell under high temperature and humid environment was attribute to the oxygen or water absorption.