• Title/Summary/Keyword: high school physics

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Nanopore Generation in Low Dielectric Organosilicate and SiCOH Thin Films

  • Heo, Kyu-Young;Yoon, Jin-Hwan;Jin, Kyeong-Sik;Jin, Sang-Woo;Oh, Kyoung-Suk;Choi, Chi-Kyu;Ree, Moon-Hor
    • Proceedings of the Polymer Society of Korea Conference
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    • 2006.10a
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    • pp.298-298
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    • 2006
  • There has been much interest in incorporating nanoscale voids into dielectric materials in order to reduce their k value, and thus in producing low-k porous interdielectric materials. One approach to the development of low-k dielectric materials is the templated polycondensation of organosilicate precursors in the presence of a thermally labile, organic polymeric porogen. The other is SiOCH films have low dielectric constant as well as good mechanical strength and high thermal stability through PECVD. In this article we explore the nanopore generation mechanism of organosilicate film using star-shape porogen and SiOCH film using bis-trimethylsilylmethane (BTMSM) precursor.

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Design of online damage images detection system for large-aperture mirrors of high power laser facility based on wavefront coding technology

  • Fang, Wang;Qinxiao, Liu;Dongxia, Hu;Hongjie, Liu;Tianran, Zheng
    • Nuclear Engineering and Technology
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    • v.53 no.9
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    • pp.2899-2908
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    • 2021
  • The laser transport system of the high power laser facility is mainly composed of large-aperture laser transport mirrors (TMs). Obtaining the high-resolution online damage images during the operation, which is of great significance for operating safely of the mirrors and the facility. Based on wavefront coding, pan-tilt scanning and image stitching technologies, an online laser-damage images detection system is designed, and it can achieve high-precision detection of surface characteristics of large-aperture laser transport mirrors. The preliminary simulation proves that the system can solve the depth of field matching problem caused by pan-tilt tilt imaging and achieve higher resolution.

Design of the Filter Exchange Mechanism for Schmidt Telescope

  • Ji, Tae-Geun;Park, Woojin;Han, Jimin;Kim, Dohoon;Lim, Gu;Jeong, Mankeun;Im, Myungshin;Pak, Soojong
    • The Bulletin of The Korean Astronomical Society
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    • v.45 no.1
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    • pp.67.3-68
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    • 2020
  • A prime focus telescope, e.g., Schmidt telescope, has advantages especially for a wide field of view survey in astronomy. In this optical configuration, the camera is placed in front of the primary mirror. Since the installation of a typical filter wheel to the prime focus telescope causes serious obscuration of the incoming light, a customized filter device is required for high sensitivity images. In this poster, we present a new filter exchange mechanism, which can host four filters moving along quadrant directions. We plan to install this on the Celestron 36 cm Rowe-Ackermann Schmidt Astrograph (RASA 36) located at El Sause Observatory in Chile.

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Analysis of academic achievements on above-level testing of newly entering students in science specialized high schools (상급 학년 수준 시험을 활용한 과학고 신입생들의 학업성취도 특성 연구)

  • Ahn, Tae Hwan;Park, Kyung Hee
    • Journal of Gifted/Talented Education
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    • v.25 no.1
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    • pp.119-138
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    • 2015
  • This study analyzed the academic achievements on above-level testing of mathematics, physics, chemistry, and English in newly entering students of science specialized high schools. It can be expected that newly students of science high specialized schools have reached ceiling level in the middle school mathematics and science academic scores. Above-level testing(or off-level testing) is a test tool used to evaluate student's ability which are above-grade level. In this study, above-level testing tools were used to develop the same type examination paper of the 2013 Korean College Scholastic Ability Test(CSAT) in mathematics, physics, chemistry, and English. The conclusions of this study were as follow: First, the academic achievement level of science specialized high school freshmen were higher the average level of general high school senior because that over 50% of them are within the 5 grade of CSAT in mathematics, physics, and chemistry. In English, 19.3% science specialized high school freshmen have reached within the 5 grade of CSAT. Second, as a result of examining characteristics of academic achievement with respect to units of subjects, in mathematics, it was showed that the academic achievement of 'continuity and limit of a function' unit was higher, 'statistics' unit was lower. In physics, the academic achievement of 'Electricity and Magnetism' unit was higher, 'Waves and particles' unit was lower. In chemistry, the academic achievement of 'compounds in life' unit was higher, 'Air' unit was lower. In English, the academic achievement of 'practical sentence' of reading area was higher, 'Sentence' of writing area was lower. In conclusion, above-level testing provided a good strategy for identifying and determining appropriate programming interventions for gifted students who are two or more grade levels above their age-mates in achievements, aptitude, or ability.

Performance Analysis of NOMA-based Relaying Networks with Transceiver Hardware Impairments

  • Deng, Chao;Zhao, Xiaoya;Zhang, Di;Li, Xingwang;Li, Jingjing;Cavalcante, Charles Casimiro
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.12 no.9
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    • pp.4295-4316
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    • 2018
  • In this paper, the performance of non-orthogonal multiple access (NOMA) dual-hop (DH) amplify-and-forward (AF) relaying networks is investigated, where Nakagami-m fading channel is considered. In order to cover more details, in our analysis, the transceiver hardware impairments at source, relay and destination nodes are comprehensively considered. To characterize the effects of hardware impairments brought in NOMA DH AF relaying networks, the analytical closed-form expressions for the exact outage probability and approximate ergodic sum rate are derived. In addition, the asymptotic analysis of the outage probability and ergodic sum rate at high signal-to-noise ratio (SNR) regime are carried out in order to further reveal the insights of the parameters for hardware impairments on the network performance. Simulation results indicate the performance of asymptotic ergodic sum rate are limited by levels of distortion noise.

Electrically Driven Quantum Dot/wire/well Hybrid Light-emitting Diodes via GaN Nano-sized Pyramid Structure

  • Go, Yeong-Ho;Kim, Je-Hyeong;Kim, Ryeo-Hwa;Go, Seok-Min;Gwon, Bong-Jun;Kim, Ju-Seong;Kim, Taek;Jo, Yong-Hun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.47-47
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    • 2011
  • There have been numerous efforts to enhance the efficiency of light-emitting diodes (LEDs) by using low dimensional structures such as quantum dots (QDs), wire (QWRs), and wells (QWs). We demonstrate QD/QWR/QW hybrid structured LEDs by using nano-scaled pyramid structures of GaN with ~260 nm height. Photoluminescence (PL) showed three multi-peak spectra centered at around 535 nm, 600 nm, 665 nm for QWs, QWRs, and QDs, respectively. The QD emission survived at room temperature due to carrier localization, whereas the QW emission diminished from 10 K to 300 K. We confirmed that hybrid LEDs had zero-, one-, and two-dimensional behavior from a temperature-dependent time-resolved PL study. The radiative lifetime of the QDs was nearly constant over the temperature, while that of the QWs increased with increasing temperature, due to low dimensional behavior. Cathodoluminescence revealed spatial distributions of InGaN QDs, QWRs, and QWs on the vertices, edges, and sidewalls, respectively. We investigated the blue-shifted electroluminescence with increasing current due to the band-filling effect. The hybrid LEDs provided broad-band spectra with high internal quantum efficiency, and color-tunability for visible light-emitting sources.

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Effect of growth interruption on InN/GaN single quantum well structures

  • Kwon, S.Y.;Kim, H.J.;Na, H.;Seo, H.C.;Kim, H.J.;Shin, Y.;Kim, Y.W.;Yoon, S.;Oh, H.J.;Sone, C.;Park, Y.;Sun, Y.P.;Cho, Y.H;Cheong, H.M.;Yoon, E.
    • Journal of the Korean Vacuum Society
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    • v.12 no.S1
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    • pp.95-99
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    • 2003
  • We successfully grew InN/GaN single quantum well structures by metal-organic chemical vapor deposition and confirmed their formation by optical and structural measurements. We speculate that relatively high growth temperature ($730^{\circ}C$) of InN layer enhanced the formation of 2-dimensional quantum well structures, presumably due to high adatom mobility. As the growth interruption time increased, the PL emission efficiency from InN layer improved with peak position blue-shifted and the dislocation density decreased by one order of magnitude. The high resolution cross-sectional TEM images clearly showed that the InN layer thickness reduced from 2.5 nm (without GI) to about I urn (with 10 sec GI) and the InN/GaN interface became very flat with 10 sec GI. We suggest that decomposition and mass transport processes on InN during GI is responsible for these phenomena.

X-ray Absorption and Photoemission Spectroscopy Study of Nd1/2A1/2Mn1-yCryO3(A=Ca, Sr)

  • Kang, J.S.;Kim, J.H.;Han, S.W.;Kim, K.H.;Choi, E.J.;Sekiyama, A.;Kasai, S.;Suga, S.;Kimura, T.
    • Journal of Magnetics
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    • v.8 no.4
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    • pp.142-145
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    • 2003
  • Valence states and electronic structures of Cr-doped $Nd_{1/2}A_{1/2}Mn_{1-y}Cr_{y}O_3$(NAMO; A=Ca, Sr) manganites have been investigated using x-ray absorption spectroscopy (XAS) and high-resolution photoemission spectroscopy (PES). All the Cr-doped NAMO systems exhibit the clear metallic Fermi edges in the Mn $e_{g}$ PES spectra near $E_{F}$. The spectral intensity at $E_{F}$ is higher for Cr-doped N $d_{l}$ 2/S $r_{l}$ 2/Mn $O_3$(NSMO) than for Cr-doped N $d_{l}$ 2/C $a_{l}$ 2/Mn $O_3$ (NCMO), reflecting the stronger metallic nature for NSMO than for NCMO. The measured Cr 2p XAS spectra are found to be very similar to that of C $r_2$ $O_3$, indicating that Cr ions in Cr-doped NAMO are in the trivalent C states ( $t^3$$_{2g}$). The Cr 2p XAS data are consistent with the Cr 3d PES spectra located at ∼1.3 eV below $E_{F}$ and having no emission near $E_{F}$.

Thermal Effect on Characteristics of IZTO Thin Films Deposited by Pulsed DC Magnetron Sputtering

  • Son, Dong-Jin;Ko, Yoon-Duk;Jung, Dong-Geun;Boo, Jin-Hyo;Choa, Sung-Hoon;Kim, Young-Sung
    • Bulletin of the Korean Chemical Society
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    • v.32 no.3
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    • pp.847-851
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    • 2011
  • This study examined In-Zn-Sn-O (IZTO) films deposited on glass substrates by pulsed DC magnetron sputtering with various substrate temperatures. The structural, electrical, optical properties were analyzed. Xray diffraction showed that the IZTO films prepared at temperatures > $150^{\circ}C$ were crystalline which adversely affected the electrical properties. Amorphous IZTO films prepared at $100^{\circ}C$ showed the best properties, such as a low resistivity, high transmittance, figure of merit, and high work function of $4.07{\times}10^{-4}\;{\Omega}$, 85%, $10.57{\times}10^{-3}\;{\Omega}^{-1}$, and 5.37 eV, respectively. This suggests that amorphous IZTO films deposited at relatively low substrate temperatures ($100^{\circ}C$) are suitable for electrode applications, such as OLEDs as a substitute for conventional crystallized ITO films.