• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.124-124
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• 2010

Much interest has been focused on InGaN-based materials and their quantum structures due to their optoelectronics applications such as light emitting diode (LED) and photovoltaic devices, because of its high thermal conductivity, high optical efficiency, and direct wide band gap, in spite of their high density of threading dislocations. Build-in internal field-induced quantum-confined Stark effect in InGaN/GaN quantum well LED structures results in a spatial separation of electrons and holes, which leads to a reduction of radiative recombination rate. Therefore, many growth techniques have been developed by utilizing lateral over-growth mode or by inserting additional layers such as patterned layer and superlattices for reducing threading dislocations and internal fields. In this work, we investigated various characteristics of InGaN multiple quantum wells (MQWs) LED structures grown on selectively wet-etched porous (SWEP) GaN template layer and compared with those grown on non-porous GaN template layer over c-plane sapphire substrates. From the surface morphology measured by atomic force microscope, high resolution X-ray diffraction analysis, low temperature photoluminescence (PL) and PL excitation measurements, good structural and optical properties were observed on both LED structures. However, InGaN MQWs LED structures grown on SWEP GaN template layer show relatively low In composition, thin well width, and blue shift of PL spectra on MQW emission. These results were explained by rough surface of template layer, reduction of residual compressive stress, and less piezoelectric field on MQWs by utilizing SWEP GaN template layer. Better electrical properties were also observed for InGaN MQWs on SWEP GaN template layer, specially at reverse operating condition for I-V measurements.

• Publications of The Korean Astronomical Society
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• v.22 no.4
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• pp.133-140
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• 2007

We have determined the disk size of Be stars by using $H{\alpha}$ emission. We observed spectra of Be stars with telescope in SNU, equipped with SB SGS (Santa Babara Self Guided Spectrograph) and CCD ST-8. The size of disk of Be stars was estimated with the Be star model of Grundstrom & Gies (2006). This study suggests that the medium resolution spectra taken with small telescope equipped with commercial spectrograph are useful to estimate the approximate size of the $H{\alpha}$ emitting disk around Be stars.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.194-198
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• 2010

Cubic boron nitride (c-BN) is a promising material for use in many potential applications because of its outstanding physical properties such as high thermal stability, high abrasive wear resistance, and super hardness. Even though 316L austenitic stainless steel (STS) has poor wear resistance causing it to be toxic in the body due to wear and material chips, 316L STS has been used for implant biomaterials in orthopedics due to its good corrosion resistance and mechanical properties. Therefore, in the present study, c-BN films with a $B_4C$ layer were applied to a 316L STS specimen in order to improve its wear resistance. The deposition of the c-BN films was performed using an r.f. (13.56 MHz) magnetron sputtering system with a $B_4C$ target. The coating layers were characterized using XPS and SEM, and the mechanical properties were investigated using a nanoindenter. The friction coefficient of the c-BN coated 316L STS steel was obtained using a pin-on-disk according to the ASTM G163-99. The thickness of the obtained c-BN and $B_4C$ were about 220 nm and 630 nm, respectively. The high resolution XPS spectra analysis of B1s and N1s revealed that the c-BN film was mainly composed of $sp^3$ BN bonds. The hardness and elastic modulus of the c-BN measured by the nanoindenter were 46.8 GPa and 345.7 GPa, respectively. The friction coefficient of the c-BN coated 316L STS was decreased from 3.5 to 1.6. The wear property of the c-BN coated 316L STS was enhanced by a factor of two.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.264-264
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• 2010

Single-walled carbon nanotubes (SWCNTs) were grown on a Si wafer by using thermal chemical vapor deposition (t-CVD). We investigated the effect of the catalyst deposition rate on the types of CNTs grown on the substrate. In general, smaller islands of catalyst occur by agglomeration of a catalyst layer upon annealing as the catalyst layer becomes thinner, which results in the growth of CNTs with smaller diameters. For the same thickness of catalyst, a slower deposition rate will cause a more uniformly thin catalyst layer, which will be agglomerated during annealing, producing smaller catalyst islands. Thus, we can expect that the smaller-diameter CNTs will grow on the catalyst deposited with a lower rate even for the same thickness of catalyst. The 0.5-nm-thick Fe served as a catalyst, underneath which Al was coated as a catalyst support as well as a diffusion barrier on the Si substrate. The catalyst layers were. coated by using thermal evaporation. The deposition rates of the Al and Fe layers varied to be 90, 180 sec/nm and 70, 140 sec/nm, respectively. We prepared the four different combinations of the deposition rates of the AI and Fe layers. CNTs were synthesized for 10 min by flowing 60 sccm of Ar and 60 sccm of $H_2$ as a carrier gas and 20 sccm of $C_2H_2$ as a feedstock at 95 torr and $810^{\circ}C$. The substrates were subject to annealing for 20 sec for every case to form small catalyst islands prior to CNT growth. As-grown CNTs were characterized by using field emission scanning electron microscopy, high resolution transmission electron microscopy, Raman spectroscopy, UV-Vis NIR spectroscopy, and atomic force microscopy. The fast deposition of both the Al and Fe layers gave rise to the growth of thin multiwalled CNTs with the height of ${\sim}680\;{\mu}m$ for 10 min while the slow deposition caused the growth of ${\sim}800\;{\mu}m$ high SWCNTs. Several radial breathing mode (RBM) peaks in the Raman spectra were observed at the Raman shifts of $113.3{\sim}281.3\;cm^{-1}$, implying the presence of SWCNTs (or double-walled CNTs) with the tube diameters 2.07~0.83 nm. The Raman spectra of the as-grown SWCNTs showed very low G/D peak intensity ratios, indicating their low defect concentrations.

• Corrosion Science and Technology
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• v.17 no.2
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• pp.45-53
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• 2018

A new 80Ti-15Ta-5Zr wt% alloy surface was protected by anodic oxidation in phosphoric acid solution. The protective oxide layer (TiO2, ZrO2 and Ta suboxides and thickness of 15.5 nm) incorporated $PO{_4}^{3-}$ ions from the solution, according to high resolution XPS spectra. The AFM analysis determined a high roughness with SEM detected pores (20 - 50 nm). The electrochemical studies of bare and anodically oxidized Ti-15Ta-5Zr alloy in Carter-Brugirard saliva of different pH values and saliva with 0.05M NaF, pointed to a nobler surface for the protected alloy, with a thicker electrodeposited oxide layer acting as a barrier against aggressive ions. The oxidized alloy significantly decreased corrosion current densities and total quantity of ions released into the oral environment in comparison with the bare one, at higher polarisation resistance and protective capacity of the electrodeposited layer. The impedance data revealed a bi-layered oxidation film formed by: a dense, compact, barrier layer in contact with the metallic substrate, decreasing the potential gradient across the metal/oxide layer/solution interface, reducing the anodic dissolution and a more permissive, porous layer in contact with the electrolyte. The open circuit potential for protected alloy shifted to nobler values, with thickening of the oxidation film signifying long-term protection.

• Korean Journal of Materials Research
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• v.28 no.4
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• pp.208-213
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• 2018

Epitaxial ($11{\bar{2}}0$) a-plane GaN films were grown on a ($1{\bar{1}}02$) R-plane sapphire substrate with photoresist (PR) masks using metal organic chemical vapor deposition (MOCVD). The PR mask with striped patterns was prepared using an ex-situ lithography process, whereas carbonization and heat treatment of the PR mask were carried out using an in-situ MOCVD. The heat treatment of the PR mask was continuously conducted in ambient $H_2/NH_3$ mixture gas at $1140^{\circ}C$ after carbonization by the pyrolysis in ambient $H_2$ at $1100^{\circ}C$. As the time of the heat treatment progressed, the striped patterns of the carbonized PR mask shrank. The heat treatment of the carbonized PR mask facilitated epitaxial lateral overgrowth (ELO) of a-plane GaN films without carbon contamination on the R-plane sapphire substrate. Thhe surface morphology of a-plane GaN films was investigated by scanning electron microscopy and atomic force microscopy. The structural characteristics of a-plane GaN films on an R-plane sapphire substrate were evaluated by ${\omega}-2{\theta}$ high-resolution X-ray diffraction. The a-plane GaN films were characterized by X-ray photoelectron spectroscopy (XPS) to determine carbon contamination from carbonized PR masks in the GaN film bulk. After $Ar^+$ ion etching, XPS spectra indicated that carbon contamination exists only in the surface region. Finally, the heat treatment of carbonized PR masks was used to grow high-quality a-plane GaN films without carbon contamination. This approach showed the promising potential of the ELO process by using a PR mask.

• Journal of The Korean Astronomical Society
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• v.48 no.5
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• pp.313-323
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• 2015

Active galactic nuclei (AGN) are known for irregular variability on all time scales, down to intra-day variability with relative variations of a few percent within minutes to hours. On such short timescales, unexplored territory, such as the possible existence of a shortest characteristic time scale of activity and the shape of the high frequency end of AGN power spectra, still exists. We present the results of AGN single-dish fast photometry performed with the Korean VLBI Network (KVN). Observations were done in a “anti-correlated” mode using two antennas, with always at least one antenna pointing at the target. This results in an effective time resolution of less than three minutes. We used all four KVN frequencies, 22, 43, 86, and 129 GHz, in order to trace spectral variability, if any. We were able to derive high-quality light curves for 3C 111, 3C 454.3, and BL Lacertae at 22 and 43 GHz, and for 3C 279 at 86 GHz, between May 2012 and April 2013. We performed a detailed statistical analysis in order to assess the levels of variability and the corresponding upper limits. We found upper limits on flux variability ranging from ~1.6% to ~7.6%. The upper limits on the derived brightness temperatures exceed the inverse Compton limit by three to six orders of magnitude. From our results, plus comparison with data obtained by the University of Michigan Radio Astronomy Observatory, we conclude that we have not detected source-intrinsic variability which would have to occur at sub-per cent levels.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.8
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• pp.1791-1797
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• 2014

A water level measurement radar estimates beat frequencies to extract the corresponding water level information for water resource management. Therefore, it is required to maintain the high degree of reliability and accuracy in beat frequency estimates. However, Beat spectra of water surface return echoes can have very widely varying shapes according to system frequency linearity, measurement environments and weather conditions. Therefore, serious problems may arise in maintaining the reliability and accuracy of the conventional level estimation method. Therefore, in this paper, high resolution spectrum estimates are analyzed for improvement of the conventional method. These methods show that the more accurate level measurement can be possible on the condition that SNR is higher than a certain required threshold. However, if SNR is too low, the conventional method shows that estimates are more reliable than the suggested method though absolute errors are too large.

• Mycobiology
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• v.49 no.4
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• pp.434-437
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• 2021

In our ongoing search for new secondary metabolites from fungi, a basidiomycete fungus Irpex consors was selected for mycochemical investigation, and three new zwitterionic alkaloids (1-3) and five known compounds (4-8) were isolated from the culture broth (16 l) of I. consors. The culture filtrate was fractionated by a series of column chromatography including Diaion HP-20, silica gel, and Sephadex LH-20, Sep-Pak C₁₈ cartridge, medium pressure liquid chromatography (MPLC), and high pressure liquid chromatography (HPLC) to yield eight compounds (1-8). The structures of the isolated compounds were elucidated by the interpretation of nuclear magnetic resonance (NMR) spectra and high-resolution mass spectrometry (HR-MS). Their antioxidant and antibacterial activities were examined. The zwitterionic structures of three new sesquiterpene alkaloids (1-3) were determined together with five known compounds identified as stereumamide E (4), stereumamide G (5), stereumamide H (6), stereumamide D (7), and sterostrein H (8). This is the first report of the zwitterionic alkaloids in the culture broth of I. consors. Three new zwitterionic alkaloids were named as consoramides A-C (1-3).

• Journal of the Mineralogical Society of Korea
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• v.29 no.3
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• pp.155-165
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• 2016

Understanding the effect of boron content on atomic structures of boron-bearing multicomponent silicate melts is essential to reveal the atomistic origins of diverse geochemical processes involving silica-rich magmas, such as explosive volcanic eruption. The detailed atomic environments around B and Al in boron-bearing complex aluminosilicate glasses yield atomistic insights into reactivity of nuclear waste glasses in contact with aqueous solutions. We report experimental results on the effect of boron content on the atomic structures of sodium borate glasses and boron-bearing multicomponent silicate melts [malinkoite ($NaBSiO_4$)-nepheline ($NaAlSiO_4$) pseudo-binary glasses] using the high-resolution solid-state NMR ($^{11}B$ and $^{27}Al$). The $^{11}B$ MAS NMR spectra of sodium borate glasses show that three-coodrinated boron ($^{[3]}B$) increases with increasing $B_2O_3$ content. While the spectra imply that the fraction of non-ring species decreases with decreasing boron content, peak position of the species is expected to vary with Na content. Therefore, the quantitative estimation of the fractions of the ring/non-ring species remains to be explored. The $^{11}B$ MAS NMR spectra of the glasses in the malinkoite-nepheline join show that four-coordinated boron ($^{[4]}B$) increases as $X_{Ma}$ [$=NaBSiO_4/(NaBSiO_4+NaAlSiO_4)$] increases while $^{[3]}B$ decreases. $^{27}Al$ MAS NMR spectra of the multicomponent glasses confirm that four-coordinated aluminum ($^{[4]}Al$) is dominant. It is also observed that a drastic decrease in the peak widths (full-width at half-maximum, FWHM) of $^{[4]}Al$ with an addition of boron ($X_{Ma}=0.25$) in nepheline glasses. This indicates a decrease in structural and topological disorder around $^{[4]}Al$ in the glasses with increasing boron content. The quantitative atomic environments around boron of both binary and multicomponent glasses were estimated from the simulation results of $^{11}B$ MAS NMR spectra, revealing complex-nonlinear variation of boron topology with varying composition. The current results can be potentially used to account for the structural origins of the change in macroscopic properties of boron-bearing oxide melts with varying boron content.