• The Korean Journal of Ceramics
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• v.4 no.1
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• pp.5-8
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• 1998

Flat belt(FB) type high pressure apparatus has been succesfully utilized in various high pressure experimental stations in Korea and Japan to conduct HPHT (high pressure and high temperature) diamond synthesis. Present paper discusses pressure calibration of FB apparatus at high temperature to establish P-T condition of diamond synthesis. We also present some examples of controling P-T condition through careful experimental set-up of the high pressure sample cells. Finally we discuss reproducibility of pressure and temperature condition of the HPHT diamond synthesis.

• The Korean Journal of Ceramics
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• v.2 no.4
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• pp.221-225
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• 1996

In diamond synthesis by metal film growth method under high pressure and high temperature, the nucleation and growth of diamond was observed dependent on the carbon source variation from graphite powder to the heat treated powders of lamp black carbon. At the low driving force condition near equilibrium pressure and temperature line, nucleation of diamond did not occur but growth of seed diamond appeared in the synthesis from lamp black carbon while both nucleation and growth of diamond took place in the synthesis from graphite. Growth morphology change of diamond occurred from cubo-octahedron to octahedron in the synthesis from graphite but very irregular growth of seed diamond occurred in the synthesis from lamp block carbon. Lamp black carbon transformed to recrystallized graphite first and very nucleation of diamond was observed on the recrystallized graphite surface. Growth morphology of diamond on the recrystallized graphite was clear cubo-octahedron even at higher pressure departure condition from equilibrium pressure and temperature line.

• Journal of the Korean Ceramic Society
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• v.32 no.9
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• pp.1085-1091
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• 1995

Molybdenum disilicide (MoSi2) was synthesized from Mo, MoO3, Si and Al powders by self-propagating high temperature synthesis (SHS). The effect of processing parameters such as Mo/MoO3 molar ratio, Ar gas pressure in the reactor and pressing pressure of compacts in synthesis of MoSi2 were investigated. h-MoSi2 was transformed into t-MoSi2 with increasing the Mo/MoO3 mole ratio, and only t-MoSi2 phase was identified above 3.5 : 1 (molar ratio). The synthesized phases did not change with the variation of Ar gas pressure and pressing pressure of compacts. It was found that the combustion temperature was above 2,50$0^{\circ}C$. The products were separated into MoSi2 (s) and $\alpha$-Al2O3 by the difference of their specific grativities. Bending strength, hardness and density of sintered specimen exhibited 82 MPa, 5.368 GPa and 5.43 g/㎤, respectively.

• The Korean Journal of Ceramics
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• v.5 no.2
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• pp.148-154
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• 1999

A method to simultaneously synthesize and consolidate $Ti_5Si_4 \;and\; Ti_5Si_3$-20 vol%Nb composite from powders of Ti, Si and Nb was investigated. Combustion synthesis was carried out under the combined effect of an electric field and mechanical pressure. Highly dense $Ti_5Si_4 \;and\; Ti_5Si_3$-20 vol% Nb with relative densities up to 98% was produced from powders of Ti, Si and Nb under the application of 60 MPa pressure and 3000A current on the reactant.

• Journal of the Korean Ceramic Society
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• v.33 no.1
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• pp.41-48
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• 1996

Self-propagating High-temperature Synthesis of Ti+N system has been investigated using the cylindrical high pressure reactor. The nitrogen pressure was varied from 40 to 80 atmosphere and TiNx(x=0.55) powder produced by SHS process was used as a diluent in order to control the reaction. Both the velocity of surface reaction and the ratio of TiN synthesis increased with increasing the nitrogen pressure. As the amount of diluent increases the degree of conversion to titanium nitride increases. Homogenious TiN powder was obtained in the composition 50Ti+50TiN0.94(diluent)

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.5
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• pp.222-229
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• 2003

InP crystal is an increasingly important semiconductor material in the application of long-wave optoelectronic and high frequency devices. The equilibrium vapor pressure of phosphorus at the melting point of InP is so high that the synthesis process is very difficult. Liquid-encapsulated Czochralski (LEC) pulling from the melt at high pressure is a generally favored technique to grow InP single crystals. This technique involves two steps: the synthesis of polycrystalline powder and the growth of single crystal from the melt at high pressure. This article reviewed the latest development in the preparation of InP crystal and the evaluation on the crystal quality.

• Korean Journal of Materials Research
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• v.28 no.6
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• pp.337-342
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• 2018

Using a high pressure homonizer, we report on the electrochemical performance of $Li_4Ti_5O_{12}(LTO)$ particles manufactured as anode active material for lithium ion battery. High-pressure synthesis processing is performed under conditions in which the mole fraction of Li/Ti is 0.9, the synthesis pressure is 2,000 bar and the numbers of passings-through are 5, 7 and 10. The observed X-ray diffraction patterns show that pure LTO is manufactured when the number of passings-through is 10. It is found from scanning electron microscopy analysis that the average size of synthesized particles decreases as the number of passings-through increases. $LiCoO_2-based$ active cathode materials are used to fabricate several coin half/full cells and their battery characteristics such as lifetime, rate capability and charge transfer resistance are then estimated, revealing quite good electrochemical performance of the LTO particles as an effective anode active material for lithium secondary batteries.

• Journal of the Korean Ceramic Society
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• v.33 no.9
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• pp.961-968
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• 1996

The aluminum nitride was synthesized by the self-propagating high-temperature synthesis(SHS). The synthe-sis was used aluminum powder mixed with AlN powder as reactant and the control factors affected to synthesis were considered compact density pressure of reaction gas AlN diluent content and aluminum powder size. The SHS reaction conducted with a reactant containing 50% AlN diluent under 0.8MPa nitrogen gas pressure yielded a complete conversion of aluminum powder to AlN powders. The size and purity of AlN produced were found to be comparable with that of AlN produced by the carbothermal nitrogen method.

• 한국연소학회:학술대회논문집
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• 2015.12a
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• pp.73-74
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• 2015

Synthesis gas such as hydrogen and carbon monoxide was produced from $CH_4/oxygen$ mixture using insulated pressurized porous media combustor. Experimentally, two cylindrical SiC foams with the different pore density were piled up in a quartz tube and fully premixed mixture was supplied in the axial direction. After stabilizing fuel-rich flame at the interface of the two foams at several pressure conditions, mole fractions of synthesis gases were measured by gas chromatography. Heat recirculation through the inner foam structure could extend the flow velocity of stable region over the laminar burning velocity. As the pressure increased, the rich flammability limit, $H_2/CO$ ratio, and module M increased.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.817-824
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• 1995

TiB2 was simultaneously synthesized and densified with concurrent self-propagating high-temperature synthesis and direct contact-heating by electrcial power input and pressure. Density of TiB2 synthesized by self-propagating high-temperature synthesis and consolidated simultaneously by direct contact-heating and pressure was maximum 80% of the theoretical density (4.52g/㎤). Temperature profile was analyzed by solving heat balance equation with numerical method (FTCS method). The temperature of the sample was sufficiently raised to that temperature sufficient to be densified. It was ascertained that the density of the SHS synthesized TiB2 is exponentially proportinal to the input thermal energy per mass.