• Journal of Magnetics
• /
• 제18권2호
• /
• pp.155-158
• /
• 2013

FeCoB films were being prepared on a Ru underlayer by using the oblique incidence of sputtered and back-scattered particles which have a high in-plane magnetic anisotropy field $H_k$ above 400 Oe. It is suitable to attain such deposition condition when facing targets sputtering system. The in-plane X-ray diffraction analysis clarified that there is anisotropic residual stress which is the origin of the high in-plane magnetic anisotropy. The directional crystalline alignment and inclination of crystallite growth were also observed. Such anisotropic crystalline structures may affect the anisotropic residual stress in the films. The B content of 5.6 at.% was appropriate to induce such anisotropic residual stress and $H_k$ of 410 Oe in this experiment. The film with B content of 6 at.% possessed large saturation magnetization of 22 kG and high $H_k$ of 500 Oe. The film exhibited high ferromagnetic resonance frequency of 9.2 GHz.

• 한국전기전자재료학회논문지
• /
• 제17권8호
• /
• pp.888-892
• /
• 2004

It is necessary to develop soft magnetic layer with high saturation magnetization 4 $\pi{M}_s$ and in-plane magnetic anisotropy field Hk for soft magnetic underlayer of perpendicular magnetic recording media with high signal to noise ratio. Fe-Co-B layer with high 4 $\pi$Ms of about 23 kG deposited on Ni-Fe and Ni-Fe/Si seedlayer exhibited very high in-plane magnetic anisotropy filed Hk of about 280 and 380 Oe, respectively, In-plane XRD studies clarified that the lattice spacing of planes along the easy axis direction was longer than that along the hard axis direction in the Fe-Co-B layers with high Hk. These results indicate that high Hk of Fe-Co-B/Ni-Fe and Fe-Co-B/［Ni-Fe/si］ layers were resulted from magnetoelastic anisotropy owing to a residual stress. Moreover, the high Hk in the Fe-Co-B/Ni-Fe layer was maintained until 30$0^{\circ}C$ annealing temperature.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 추계학술대회 논문집
• /
• pp.303-305
• /
• 2000

The effect of anisotropy field on the high frequency magnetic characteristics of FeTaN films was investigated. Those films show good magnetic properties : 4$\pi$Ms of 13KG, Hc of 0.6 Oe, effective permeability(${\mu}$') of 800 with a stable frequency response up to 800MHz. The films also show a large anisotropy field(Hk) over 21Oe. It result from the increased anisotropy of patterned FeTaN films. The combination of high saturation magnetization and relatively high Hk in these films is believed to the partly responsible for FeTaN for the excellent high-frequency behavior.

• Journal of Magnetics
• /
• 제19권4호
• /
• pp.340-344
• /
• 2014

An effective process was employed for synthesizing anisotropic magnetic $SmCo_7$-type alloy flakes with high coercivity, which is highly desirable for many applications. The highest coercivity of 16.3 kOe corresponds to a typical flake thickness of 200 nm for the 3-h ball-milled sample. The anisotropy field was calculated by measuring the parallel and perpendicular directions to the easy magnetization direction of the powders. The anisotropy field decreased with the increase of the ball milling time, thus indicating that the decrease of coercivity was mainly caused by the reduction of the anisotropy field. Microstructure analysis indicated that the morphology, grain size, and anisotropy field of these samples have a great influence on the magnetic properties.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.443-446
• /
• 2001

MI(Magneto-Impedance) sensor which is made by thin films has significantly high detecting sensitivity in weak magnetic field. It also has a merit to be able to build in low power system. Its structure is simple, which makes it easier to prepare a miniature. In this study, its magnetic permeability and anisotropy field(H$\sub$k/) as a function of a thickness of sputtered amorphous CoZrNb thin film with high saturation magnetostriction and excellent soft magnetic property are investigated. In order to make a uniaxial anisotropy, thin film was subjected to post annealing with a static magnetic field with 1KOe intensity at 250, 300, and 320$^{\circ}C$ for 2 hour. Anisotropy field(H$\sub$k/)of thin film is measured by using MH loop tracer. Its magnetic permeability of thin film is measured over the frequency range from 1 MHz to 750MHz. It has shown that the magnetic permeability of amorphous CoZrNb thin film is decreased due to the skin effect with increasing a thickness of CoZrNb thin film, and hence its driving frequency is lowered.

• 한국자기학회지
• /
• 제15권1호
• /
• pp.25-29
• /
• 2005

고상에피택시방법으로 성장한 YIG 박막의 온도에 따른 자기특성의 변화를 결정이방성과 수직이방성을 중심으로 측정하였다. 고상에피택시법의 열처리 온도가 낮을 경우 전위가 발생하여 응력을 해소함으로써 수직이방성이 유도되지 않았으나 높은 온도에서 열처리된 박막에는 우수한 에피택시성장으로 잔류응력이 축적되어 수직이방성이 유도되었다. 수직이방성자장은 기판과 박막의 열팽창계수의 차이로 결정자기이방성이 없어지는 온도까지 선형으로 감소하였고, 보자력도 온도가 증가하면 감소하였다. YIG(111) 에피택시박막에 수직이방성이 유도되었을 경우 결정이방성상수 $K_1$을 $H_k=4K_1/3M_s$로부터 결정할 수 있었다. 온도에 따른 초자화율의 거동은 Hopkinson 효과로 잘 설명되어졌으며 측정결과를 이용하명 상자성 자화율이 큰 기판위에 성장한 박막의 큐리온도를 쉽게 측정할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
• /
• pp.778-781
• /
• 2002

MI(Magneto-Impedance) sensor which is made by thin films has significantly high detecting sensitivity in weak magnetic field. It also has a merit to be able to build in the low power system. Its structure is simple, which makes it easier to prepare a miniature. In this study, its magnetic permeability and anisotropy field$(H_k)$ as a function of a thickness of sputtered amorphous CoZrNb films with zero-magnetostriction and excellent soft magnetic property are investigated. In order to make a uniaxial anisotropy, film was subjected to the post annealing in a static magnetic field with 1KOe intensity at 250, 300, and $320^{\circ}C}$ respectively for 2 hours. Anisotropy field$(H_k)$ of film is measured by using a MH loop tracer. Its magnetic permeability of a film is measured over the frequency range from 1 MHz to 750MHz. It has shown that the magnetic permeability of amorphous CoZrNb film is decreased due to the skin effect with increasing a thickness of the CoZrNb film, and hence its driving frequency is lowered. And, it was examined on the permeability and impedance to fabricate the MI sensor which acts at a low frequency by thickening a CoZrNb film relatively.

• 한국자기학회지
• /
• 제5권5호
• /
• pp.343-350
• /
• 1995

An overview will be given on recent Mossbauer and magnetization investigation of the applied field dependence of the magnetic properties of typical systems without strong magnetic anisotropy and showing the absence of magnetic saturation in high fields (including iron-rich spin glass (amorphous $Fe_{93}Zr_{7}$, soft ferromagnets (amorphous $Fe_{88}Zr_{12}$, $Fe_{70}Ni_{20}Zr_{10}$ and $Fe_{88}B_{12}$) and pure Fe). The results emphasize that shape anisotropy due to surface irregularities causes misalignment between the magnetization and the applied field in the otherwise collinear magnetic structure.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제13권6호
• /
• pp.556-561
• /
• 2013

Interest in spin-torque oscillators (STOs) has been increasing due to their potential use in communication devices. In particular the magnetic tunnel junction-based STO (MTJ-STO) with high perpendicular anisotropy is gaining attention since it can generate high output power. In this paper, a circuit-level model for an in-plane magnetized MTJ-STO with partial perpendicular anisotropy is proposed. The model includes the perpendicular torque and the shift field for more accurate modeling. The bias voltage dependence of perpendicular torque is represented as quadratic. The model is written in Verilog-A, and simulated using HSPICE simulator with a current-mirror circuit and a multi-stage wideband amplifier. The simulation results show the proposed model can accurately replicate the experimental data such that the power increases and the frequency decreases as the value of the perpendicular anisotropy gets close to the value of the demagnetizing field.

• 한국전기전자재료학회논문지
• /
• 제16권3호
• /
• pp.238-246
• /
• 2003

We have performed the simulation of ferromagnetic resonance spectra on the exchange coupled bilayer thin films at perpendicular configuration. Variables considered in spectrum calculation were the interfacial exchange constants per unit area, the layer thickness, and the surface anisotropy constants. In case of antiferromagnetic coupling, variation of exchange constant gave a great effect to the absorption spectra of the low and the high magnetization layer. Variation of thickness in low magnetization layer did nt nearly influenced the resonated field of the high magnetization layer. Also, the increase of negative surface anisotropy increased the resonance field of the low and the high magnetization layer.