• 대한기계학회논문집A
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• 제24권7호
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• pp.1801-1809
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• 2000

A study on the topology optimization of Hard-Disk-Driver(HDD) actuator arm in free vibration is presented. The purpose of this research is to increasse the natural frequency of the first lateral mode of the HDD actuator arm under the constraint of total moment of inertia, so as to facilitate the position control of high speed actuator am. The first lateral mode is an important factor in the position control process. Thus the topology optimization for 2-D model of the HDD actuator arm is considered. A new objective function corresponding to multieigenvalue optimization is suggested to improve the solution of the eigenvalue optimization problem. The material density of the structure is treated as the design variable and the intermediate density is penalized. The effects of different element types and material property functions on the final topology are studied. When the problem is discretized using 8-node element of a uniform density, the smoothly-varying density field is obtained without checker-board patterns incurred. As a result of the study an improved design of the HDD actuator arm is suggested. Dynamic characteristics of the suggested design are compared computationally with those of the old design. With the same amount of the moment of inertia, the natural frequency of the first lateral mode or the suggested design is subsequently increased over the existing one.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2006년도 전력전자학술대회 논문집
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• pp.403-405
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• 2006

Over the years, plasma display panel (PDP) manufacturers have impressed the flat panel display industry with yet another new product essentially having the merits of a larger screen size. Since larger size implies higher power ratings, voltage/current ratings of the power devices used have become a rising concern. Another important concern is the brightness of PDP, one way of increasing which is by operating the PDP at higher frequencies. In order to address the above issues, a transformer coupled sustain-driver for AC-PDP is proposed During the transition time, the two windings of the transformer greatly boost up the displacement current flowing through the panel capacitance and hence enable a fast inversion of the voltage polarity with practical values of resonant inductance. In the proposed topology, the resonant inductance can be increased by a factor of $(n+1)^2$ as compared to prior approaches. Increased inductance results in lower current stresses. Moreover, high frequency operation is possible by using higher value of n (turn ratio of the transformer). The operational principle and design procedure of the proposed circuit are presented with theoretical analysis. The validity of the proposed sustain driver is established through simulation and experimental results using a 42-in PDP

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계합동학술대회 논문집
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• pp.50-56
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• 2002

When the plasma panel is used as a display, frequent discharging are made to occur by alternatively charging each side of the panel to a critical voltage, which causes repeated gas discharges to occur. In this paper, an efficient sustain driver is proposed to achieve a faster rise-time in order to be suitable to widely used ADS driving method. The proposed circuit increases an operational margin up to 20 % compared with conventional approaches improving the recovery efficiency regardless of the variation of panel capacitance. Thanks to the increased operational margin, the brightness decrease problem can be solved without a limitation to sustain pulse width. The principle of operation, and features are illustrated, and verified on a 7.5 inch diagonal panel at 200 kHz operating frequency - based on experimental prototype.

• BMB Reports
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• 제51권10호
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• pp.481-483
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• 2018

Glioblastoma (GBM) is the most common and aggressive form of human adult brain malignancy. The identification of the cell of origin harboring cancer-driver mutations is the fundamental issue for understanding the nature of GBM and developing the effective therapeutic target. It has been a long-term hypothesis that neural stem cells in the subventricular zone (SVZ) might be the origin-of-cells in human glioblastoma since they are known to have life-long proliferative activity and acquire somatic mutations. However, the cell of origin for GBM remains controversial due to lack of direct evidence thereof in human GBM. Our recent study using various sequencing techniques in triple matched samples such as tumor-free SVZ, tumor, and normal tissues from human patients identified the clonal relationship of driver mutations between GBM and tumor-free SVZ harboring neural stem cells (NSCs). Tumor-free SVZ tissue away from the tumor contained low-level GBM driver mutations (as low as 1% allelic frequency) that were found in the dominant clones in its matching tumors. Moreover, via single-cell sequencing and microdissection, it was discovered that astrocyte-like NSCs accumulating driver mutations evolved into GBM with clonal expansion. Furthermore, mutagenesis of cancer-driving genes of NSCs in mice leads to migration of mutant cells from SVZ to distant brain and development of high-grade glioma through the aberrant growth of oligodendrocyte precursor lineage. Altogether, the present study provides the first direct evidence that NSCs in human SVZ is the cell of origin that develops the driver mutations of GBM.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.746-748
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• 1993

To overcome the problem of the diode reverse recovery in high switching frequency inverter, a new gate drive scheme is proposed for IGBT in this paper. Using this circuit, the reverse recovery current can be controlled and faster switching time can be achieved for hard switching inverter. The over-current protection method, which is suitable for the proposed gate driver, is also presented. The operation of the proposed circuit is investigated and its usefulness is verified through the experimental results.

• 대한전자공학회논문지SD
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• 제47권5호
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• pp.71-79
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• 2010

본 논문은 LLC 공진 제어 IC(Integrated Circuit) 설계에 관한 것이다. LLC 공진 제어 IC는 DC/DC 변환하기 위해서 외부의 공진 회로에 입력되는 주파수를 조정하여 트랜스포머를 통해서 2차 측의 출력 전압을 조정한다. 공진회로에 펄스를 공급하기 위한 클럭 생성기가 내장되어 있고, 클럭 주파수는 외부 저항을 사용하여 튜닝이 가능하다. 또한 외부 피드백 입력되는 전압을 이용해 주파수 조정이 가능하도록 VCO(Voltage Controlled Oscillator) 기능을 내장하였다. 동작의 신뢰성을 높이고 회로를 보호하기 위해서 UVLO(Under Voltage Lock Out), brown out, fault detector의 보호회로를 내장하였고, 입력 커패시턴스가 큰 용량의 IGBT(Insulated Gate Bipolar Transistor)를 구동하기 위해서 높은 전압, 전류의 제공이 가능한 HVG(High Side Driver), LVG(Low Side Driver) 드라이버 회로를 내장하였다. LLC 공진 제어 회로를 하나의 칩으로 구현하여 LLC 공진 회로를 제어하는데 있어 필요한 회로들을 설계하였다. 설계한 LLC 공진 제어 IC는 0.35 um 2P3M BCD 공정으로 제작하였다. 칩의 면적은 $1400um{\times}1450um$ 이고, 5V, 15V 두 가지의 전원 전압을 사용한다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2013년도 전력전자학술대회 논문집
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• pp.347-349
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• 2013

This paper describes analysis and calculation of line frequency ripple current according to output capacitor value and effects of LED connection in the single stage flyback converter with high power factor. The low frequency output ripple current delivered from single stage converter has been analyzed in detail and the method evaluating parasitic resistance included in LED has been provided. In order to verify the equation derived in this paper, the single stage flyback converter has been designed with constant output current regulation with DCM operation. Experiments were conducted with different LED load structures to analyze the effect of LED parasitic resistance on output ripple current. As test results, the calculation can provide guide line to select capacitor values depending on output ripple current and LED characteristics.

• 대한전자공학회논문지SD
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• 제45권10호
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• pp.7-14
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• 2008

본 논문에서는 $1.0{\mu}m$ BCD 650V 공정을 이용하여 향상된 잡음 내성과 높은 전류 구동 능력을 갖는 고전압 구동 IC를 설계하였다. 설계된 고전압 구동 IC는 500kHz의 고속 동작이 가능하고, 입력 전압의 범위가 최대 650V이다. 설계된 IC에 내장된 상단 레벨 쉬프터는 잡음 보호회로와 슈미트 트리거를 포함하고 있으며 최대 50V/ns의 높은 dv/dt 잡음 내성을 가지고 있다. 또한 설계된 숏-펄스 생성회로가 있는 상단 레벨 쉬프터의 전력 소모는 기존 회로 대비 40% 이상 감소하였다. 이외에도 상 하단 파워 스위치의 동시 도통을 방지하는 보호회로와 구동부의 전원 전압을 감지하는 UVLO(Under Voltage Lock-Out) 회로를 내장하여 시스템의 안정도를 향상시켰다. 설계된 고전압 구동 IC의 특성 검증에는 Cadence사의 spectre 및 PSpice를 이용하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.241.1-241.1
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• 2014

The large-area high-power radio-frequency (RF) driven ion sources based on the negative hydrogen (deuterium) ion beam extraction are the major components of neutral beam injection (NBI) systems in future large-scale fusion devices such as an ITER and DEMO. Positive hydrogen (deuterium) RF ion sources were the major components of the second NBI system on ASDEX-U tokamak. A test large-area high-power RF ion source (LAHP-RaFIS) has been developed for steady-state operation at the Korea Atomic Energy Research Institute (KAERI) to extract the positive ions, which can be used for the NBI heating and current drive systems in the present fusion devices, and to extract the negative ions for negative ion-based plasma heating and for future fusion devices such as a Fusion Neutron Source and Korea-DEMO. The test RF ion source consists of a driver region, including a helical antenna and a discharge chamber, and an expansion region. RF power can be transferred at up to 10 kW with a fixed frequency of 2 MHz through an optimized RF matching system. An actively water-cooled Faraday shield is located inside the driver region of the ion source for the stable and steady-state operations of RF discharge. The characteristics and uniformities of the plasma parameter in the RF ion source were measured at the lowest area of the expansion bucket using two RF-compensated electrostatic probes along the direction of the short- and long-dimensions of the expansion region. The plasma parameters in the expansion region were characterized by the variation of loaded RF power (voltage) and filling gas pressure.

• Journal of Electrical Engineering and Technology
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• 제11권1호
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• pp.125-134
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• 2016

We propose an efficient high voltage level shifter for a high side Buck converter driving a light-emitting diode (LED) lamp. The proposed circuit is comprised of a low voltage pulse width modulation (PWM) signal driver, a coupling capacitor, a resistor, and a diode. The proposed method uses a property of a PWM signal. The property is that the signal repeatedly transits between a low and high level at a certain frequency. A low voltage PWM signal is boosted to a high voltage PWM signal through a coupling capacitor using the property of the PWM signal, and the boosted high voltage PWM signal drives a p-channel metal oxide semiconductor (PMOS) transistor on the high side Buck converter. Experimental results show that the proposed level shifter boosts a low voltage (0 to 20 V) PWM signal at 125 kHz to a high voltage (370 to 380 V) PWM signal with a duty ratio of up to 0.9941.